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  • Avalanche Transit - Time Devices

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    Priya Balakrishnan
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    Avalanche transit devices like TRAPATT and BARITT diodes use avalanche breakdown and transit time effects to generate microwave frequencies. TRAPATT diodes operate from hundreds of MHz to several GHz by reverse biasing a p-n junction into avalanche, trapping plasma to repeatedly charge and discharge. BARITT diodes use minority carrier injection and transit time across a forward biased junction to produce negative resistance and oscillate at lower microwave frequencies than TRAPATT diodes. Both devices exhibit voltage-current waveforms that allow them to function as high-efficiency microwave generators.

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    Avalanche Transit – Time Devices

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    Avalanche transit devices like TRAPATT and BARITT diodes use avalanche breakdown and transit time effects to generate microwave frequencies. TRAPATT diodes operate from hundreds of MHz to several GHz by reverse biasing a p-n junction into avalanche, trapping plasma to repeatedly charge and discharge. BARITT diodes use minority carrier injection and transit time across a forward biased junction to produce negative resistance and oscillate at lower microwave frequencies than TRAPATT diodes. Both devices exhibit voltage-current waveforms that allow them to function as high-efficiency microwave generators.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    2K views20 pages

    Avalanche Transit - Time Devices

    Uploaded by

    Priya Balakrishnan
    Avalanche transit devices like TRAPATT and BARITT diodes use avalanche breakdown and transit time effects to generate microwave frequencies. TRAPATT diodes operate from hundreds of MHz to several GHz by reverse biasing a p-n junction into avalanche, trapping plasma to repeatedly charge and discharge. BARITT diodes use minority carrier injection and transit time across a forward biased junction to produce negative resistance and oscillate at lower microwave frequencies than TRAPATT diodes. Both devices exhibit voltage-current waveforms that allow them to function as high-efficiency microwave generators.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPT, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 20

    Avalanche Transit Time Devices.

    TRAPATT & BARITT DIODES.

    Avalanche Operation
    Avalanche breakdown is caused by impact ionization of electronhole pairs. When applying a high electric field, carriers gain kinetic energy and generate additional electron-hole pairs through impact ionization.

    Transit Time
    The time taken by the electron to travel into the repeller space and back to the gap.

    TRAPATT DIODE
    Trapped Plasma Avalanche Triggered Transit. Its a high-efficiency microwave generator capable of operating from several hundred megahertz to several gigahertz. Basic operation p-n junction reverse biased to current densities well in excess of those encountered in normal avalanche operation.

    Dimensions
    N-type width 2.5 12.5 um P-type width 2.5 7.5 um TRAPATT Diode dia 50 70 um for CW operation @ lower frequency for high peak-power devices.

    TRAPATT Diode

    Principle of operation
    As soon as the diode is excited, the charge is accumulated in the depletion region at the junction & the electric field across the junction increases linearly. When sufficient carriers are generated, it then depress throughout the depletion region, causing voltage to fall down. During this interval, plasma formation takes place.

    Principle of operation
    Voltage & current continue to decrease to residual value & the plasma is extracted from the region. As the residual charge is removed, the voltage increases further & the diode charges again. At some point, the diode is charged fully & maintains a constant voltage across it while current drops down. When current comes back, the cycle is repeated.

    Voltage & Current waveforms for TRAPATT Diode

    Mathematical expressions

    Mathematical expressions

    Mathematical expressions

    Typical Parameters

    Applications
    The applications are a)Phased-array Radar systems b)Intermediate frequency transmitters. c)Proxity fuse sources d)Radio altimeters e)Microwave landing systems. f)Air borne & marine radars.

    Negative Resistance
    Negative resistance is defined as that property of a device which causes the current through it to be 180 degree out of phase with the voltage across it.

    BARITT DIODE
    Barrier Injected Transit Time Diode The BARITT diode uses injection and transit time characteristics of minority charge carriers to generate a negative resistance at microwave frequencies. About the biased in the forward direction boundary layer, the minority charge carriers are injected. The charge carriers have a low unsaturated drift velocity. This causes the carriers in BARITT diodes to have a large transit time leading to oscillation only @ low microwave frequencies.

    BARITT DIODE - Principle of operation

    BARITT DIODE - Principle of operation

    BARITT DIODE - Principle of operation

    I - V Characteristics of BARITT Diode.

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