PD-9,3091 IRF630 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated © Fast Switching © Ease of Paralleling ‘* Simple Drive Requirements Description Third Generation HEXFETS from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low Voss = 200V Rogyon) = 0.402 lp =9.0A ‘on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units: {lo @ To=25°C _| Continuous Drain Current, Ves @ 10 V 9.0 Continuous Drain Current, Ves @ 10 V 57 A Pulsed Drain Current © 36 Ves. Gate-to-Source Voltage Eas Single Pulse Avalanche Energy @ 250) md laa ‘Avalanche Current © i 90 (Ean Repetitive Avalanche Eneray © Ta. | [awat Peak Diode Recovery dvidt @ 5.0 it Operating Junction and “55 to +150 [Tere Storage Temperature Range °C ‘Soldering Temperature, for 10 seconds 800 (1.6mm from case) ‘Mounting Torque, 6-32 or M3 screw 40 Ibein (7.4 Nem) Thermal Resistance Parameter Min, Typ. Max. Units | ‘Junetion-to-Case Case-to-Sink, Flat, Greased Surface _ [Sunetion-to-Ambient 197IRF630 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vieryoss: Drain-to-Source Breakdown Voltage 200 | — = V_| Ves=0V, Ip= 25014 ‘AViaoss/ATs| Breakdown Voltage Temp. Coefficient | — | 0.24 | — | VPC | Reterence to 25°O, lo= ImA Roster) Static Drain-to-Souree On-Resistance| — | — | 040] @ _|Vas=10V, Ip=5.4A ® Vestn Gate Threshold Voltage 20 | — | 40 | V_|VoseVes, lo= 250nA Os, Forward Transconductance 3.8 = fr S__Vos=50V, lo=5.4A @ Joss Drainto-Source Leakage Curent = - ==} 25 wa | =o oe Ee less Gate-to-Source Forward Leakage = —_| 100 jt Vas=20V_ Gate-to-Source Reverse Leakage = |= Fico Vas=-20V [Q3 Total Gate Charge = [=] Np=5.9A a, Gate-to-Source Charge —[— 0 Qos Gate-to-Drain (“Miller”) Charge on! oo 23 Vas=10V See Fig. 6 and 13 @ tion Tum-On Delay Time — loa | — Vop=100V Lite Rise Time rr 28 ep tee Ip=5.94 [tae Tum-Off Delay Time = [39 [= Re=120 | oh Fall Time = [20 | — 62 See Figueto@ | bo Internal Drain Inductance — 4s} — Seem ea) fs) nH | from package dh bs Intemal Source Inductance —|m{- hea ce die contact Cas input Capacitance = [800 | — Vas=0¥ Coss: Output Capacitance — | 240 | — PF | Vos=25V Cus Reverse Transfer Capacitance = [ie [= {f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min._| Typ. | Max. | Units Test Conditions |; Continuous Source Current MOSFET Ibo! P . (Body Diode) TT PPT J showing ie eet low Pulsed Source Current Perea eee rae integral reverse {ny (Body Diode) © pen junction diode. ls Vsp_ Diode Forward Voltage one cae! 20 V_|Ts=25°C, Is=9.0A, Vas=0V_ © tr Reverse Recovery Time — _| 170 | 340 | ns _|Tys=25°C, Ir=5.9A, Qn Reverse Recovery Charge = 1.1 | 22 | uC |di/dt=100A/us @ ton Forward Tum-On Time Inns tarvon time Is neglaible turn-on is dominated by LssLo) Notes: © Repetitive rating; pulse width limited by © Isp<9.0A, dildt<120A/us, Voo FOR TEST CIRCUIT SEE FIOURE 13 Sor 107 °% cy 20 30 20 30 Vps, Drain-to-Source Voltage (volts) ‘Qq, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103 - seg ee Cate é 2 < Ewe z zg g < | é Ea s £ wo g 3 6 Sy 3 s g & > é cote 8 : seis os * ov a sant favs oe as Sr Sot Vp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage|p, Drain Current (Amps) Fig 9. Fig 11. 30S Tc, Case Temperature (°C) Maximum Drain Current Vs. IRF630 Ri DU.T. Vb aciaaizi Fig 10a. Switching Time Test Circuit i unten TT se HEN Spas tape Ht : i A t 10%: Too 725 —ts0 Ves ANG ta(ony tao Fig 10b. Switchi Case Temperature Thermal Response (Zio) 107 10 a ing Time Waveforms SINGLE PULSE (THERWAL RESPONSE) noTes: 4. DUTY FACTCR, O=t1/¢2 2. PEAK Ty=Fou x Zenje + Te 108 10? On 1 tt, Rectangular Pulse Duration (seconds) 10 LY Beal Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF630 TOR! Varytp to obtain. YOS>— roauite as oun i ro (| 4) [ men t 2 ooh Ett tee Ba ; é as x a * 3 Fig 12a. Unclamped Inductive Test Circuit 2 & Verse B oS rr i Yoo 2B : IL “TESEFRSSSH \ \ ks — — — af Fig 12b. Unclamped Inductive Waveforms ‘Charge ——+ Fig 13a. Basic Gate Charge Waveform 50 * starting Ty, Junction Temperaturo(*C)_ Fig 12c. Maximum Avalanche Energy Vs. Drain Current Regulator ‘Same Type as DUT. Current le * Ib Curent Sampling Resistors Fig 13b. Gate CI harge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information — See page 1516 Appendix E: Optional Leadforms — See page 1525 Intemational IR Rectifier