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  • IRF9620 N-Channel Mosfet

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    IRF9620 N-channel Mosfet

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    Datasheet

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    © All Rights Reserved
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    26 views6 pages

    IRF9620 N-Channel Mosfet

    Uploaded by

    el_george0079491
    Datasheet

    Copyright:

    © All Rights Reserved
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 6
    International PD-9.351F eR] Rectifier IRF9620 HEXFET® Power MOSFET © Dynamic dv/dt Rating P-Channel ° © Fast Switching * Ease of Paralleling © Simple Drive Requirements Voss = -200V Rosion) = 1-52 Ip =-3.5A Description ‘The HEXFET technology is the key to Intemational Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter q Max. Units. lp @Tc=25°C _| Continuous Drain Current, Ves @-10V__ | 35 |p @ Te = 100°C_| Continuous Drain Current, Ves @ -10 V 2.0 A tom Pulsed Drain Current © Hee et -14 Pp @ To= 25°C _| Power Dissipation 40 Ww Linear Derating Factor { 0.32 Wr Ves ___| Gate-to-Souroe Voltage | #20 Vv uw inductive Current, Clamp | x14 A] dv/dt Peak Diode Recovery dv/dt @ 5.0 Vins. Ty Operating Junction and ~55 to +150 Tete Storage Temperature Range “c Soldering Temperature, for 10 seconds { 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw I 10 Ibfein (1.1 Nem) } Thermal Resistance Parameter Min. Typ. Max. Units Rac ___‘[ Junction-to-Case C= = 34 eos Case-to-Sink, Flat, Greased Surface = 0.50 = °c | Psa w 361 IRF9620 Boor see TAANSCOMDUGTANCE WEMENS) ‘aac on ‘oss OFAN TO gOURCEBhEaKDOMN VOLTAGE Cait a pete. 0 2 3 ; + 3 “Ye az BT 35 $8 40 Fig, 6 — Typleel Tneconductance Ve Fig. 7 — Typleal Source-bran Diode Drain Curent Forward voltage coo a 4 é t fe #, ses i ede i os) CEPT TET Tir Ld Fig. 8 — Breakdown Voltage Vs. Temperature g .eamerance wth we 1 1 ANCTION TEMPERATURE “20NcTON TENBERATURS | Fig. 9 — Normalized On-Resistance Vs. ‘Temperature La TEST Tvs tor} ‘haat | Yoo av FAN os ‘ yy o | fg yg Ce SORTEO] Nogetve Vg, Gate-to-Sourcs Voltage (vais) = ron Test cRcum SEE FIGURE 18

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