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BDX34, BDX34A, BDX34B, BDX34C, BDX34D

PNP SILICON POWER DARLINGTONS

Designed for Complementary Use with


BDX33, BDX33A, BDX33B, BDX33C and
BDX33D

70 W at 25C Case Temperature

10 A Continuous Collector Current

Minimum hFE of 750 at 3V, 3 A

TO-220 PACKAGE
(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.


MDTRACA

absolute maximum ratings at 25C case temperature (unless otherwise noted)


RATING

SYMBOL

-60

BDX34A
BDX34B

V CBO

-100

BDX34D

-120

BDX34

-45

BDX34B

-80

-100
-120

BDX34D
Continuous collector current

-60
VCEO

BDX34C
Emitter-base voltage

-80

BDX34C

BDX34A
Collector-emitter voltage (IB = 0)

UNIT

-45

BDX34
Collector-base voltage (IE = 0)

VALUE

VEBO

-5

IC

-10

IB

-0.3

Continuous device dissipation at (or below) 25C case temperature (see Note 1)

Ptot

70

Continuous device dissipation at (or below) 25C free air temperature (see Note 2)

Ptot

Operating free air temperature range

TJ

-65 to +150

Tstg

-65 to +150

TA

-65 to +150

Continuous base current

Storage temperature range


Operating free-air temperature range
NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C.
2. Derate linearly to 150C free air temperature at the rate of 16 mW/C.




 

AUGUST 1993 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

BDX34, BDX34A, BDX34B, BDX34C, BDX34D


PNP SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER

V(BR)CEO

ICEO

ICBO

IEBO

hFE

VBE(on)

Collector-emitter
breakdown voltage

TEST CONDITIONS

IC = -100 mA

VEC

(see Note 3)

-45

BDX34A

-60

BDX34B

-80

BDX34C

-100

BDX34D

-120

TYP

MAX

IB = 0

BDX34

-0.5

VCE = -30 V

IB = 0

BDX34A

-0.5

VCE = -40 V

IB = 0

BDX34B

-0.5

VCE = -50 V

IB = 0

BDX34C

-0.5

Collector-emitter

VCE = -60 V

IB = 0

BDX34D

-0.5

cut-off current

VCE = -30 V

IB = 0

TC = 100C

BDX34

-10

VCE = -30 V

IB = 0

TC = 100C

BDX34A

-10

VCE = -40 V

IB = 0

TC = 100C

BDX34B

-10

VCE = -50 V

IB = 0

TC = 100C

BDX34C

-10

VCE = -60 V

IB = 0

TC = 100C

BDX34D

-10

VCB = -45 V

IE = 0

BDX34

-1

VCB = -60 V

IE = 0

BDX34A

-1

VCB = -80 V

IE = 0

BDX34B

-1

VCB = -100 V

IE = 0

BDX34C

-1

Collector cut-off

VCB = -120 V

IE = 0

BDX34D

-1

current

VCB = -45 V

IE = 0

TC = 100C

BDX34

-5

VCB = -60 V

IE = 0

TC = 100C

BDX34A

-5

VCB = -80 V

IE = 0

TC = 100C

BDX34B

-5

VCB = -100 V

IE = 0

TC = 100C

BDX34C

-5

VCB = -120 V

IE = 0

TC = 100C

BDX34D

-5

VEB =

-5 V

IC = 0

Emitter cut-off
current

Forward current
transfer ratio

Base-emitter
voltage

Collector-emitter
saturation voltage

Parallel diode
forward voltage

-10

VCE =

-3 V

IC = -4 A

BDX34

750

VCE =

-3 V

IC = -4 A

BDX34A

750

VCE =

-3 V

IC = -3 A

BDX34B

750

VCE =

-3 V

IC = -3 A

BDX34C

750

VCE =

-3 V

IC = -3 A

BDX34D

750

VCE =

-3 V

IC = -4 A

BDX34

-2.5

VCE =

-3 V

IC = -4 A

BDX34A

-2.5

VCE =

-3 V

IC = -3 A

BDX34B

-2.5

VCE =

-3 V

IC = -3 A

BDX34C

-2.5

(see Notes 3 and 4)

(see Notes 3 and 4)

-3 V

IC = -3 A

BDX34D

-2.5

IB =

-8 mA

IC = -4 A

BDX34

-2.5

IB =

-8 mA

IC = -4 A

BDX34A

-2.5

IB =

-6 mA

IC = -3 A

BDX34B

-2.5

IB =

-6 mA

IC = -3 A

BDX34C

-2.5

IB =

-6 mA

IC = -3 A

BDX34D

-2.5

IE =

-8 A

(see Notes 3 and 4)

IB = 0

UNIT

VCE = -30 V

VCE =

VCE(sat)

IB = 0

MIN
BDX34

-4

mA

mA

mA

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.


2


 

AUGUST 1993 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

BDX34, BDX34A, BDX34B, BDX34C, BDX34D


PNP SILICON POWER DARLINGTONS

thermal characteristics
PARAMETER

MIN

TYP

MAX

UNIT

RJC

Junction to case thermal resistance

1.78

C/W

RJA

Junction to free air thermal resistance

62.5

C/W

MAX

UNIT

resistive-load-switching characteristics at 25C case temperature


PARAMETER

TEST CONDITIONS

MIN

TYP

ton

Turn-on time

IC = -3 A

IB(on) = -12 mA

IB(off) = 12 mA

toff

Turn-off time

VBE(off) = 3.5 V

RL = 10

tp = 20 s, dc 2%

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.




 

AUGUST 1993 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

BDX34, BDX34A, BDX34B, BDX34C, BDX34D


PNP SILICON POWER DARLINGTONS

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V

TCS135AF

50000

hFE - Typical DC Current Gain

COLLECTOR-EMITTER SATURATION VOLTAGE


vs
COLLECTOR CURRENT

TC = -40C
TC = 25C
TC = 100C
10000

1000

VCE = -3 V
tp = 300 s, duty cycle < 2%
100
-05

-10

-10

TCS135AH

-20
tp = 300 s, duty cycle < 2%
IB = I C / 100

-15

-10

TC = -40C
TC = 25C
TC = 100C
-05
-05

IC - Collector Current - A

-10

-10

IC - Collector Current - A

Figure 1.

Figure 2.

BASE-EMITTER SATURATION VOLTAGE


vs
COLLECTOR CURRENT

TCS135AJ

VBE(sat) - Base-Emitter Saturation Voltage - V

-30

-25

TC = -40C
TC = 25C
TC = 100C

-20

-15

-10
IB = IC / 100
tp = 300 s, duty cycle < 2%
-05
-05

-10

-10

IC - Collector Current - A

Figure 3.


4


 

AUGUST 1993 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

BDX34, BDX34A, BDX34B, BDX34C, BDX34D


PNP SILICON POWER DARLINGTONS

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE

TIS130AB

Ptot - Maximum Power Dissipation - W

80
70
60
50
40
30
20
10
0
0

25

50

75

100

125

150

TC - Case Temperature - C

Figure 4.




 

AUGUST 1993 - REVISED SEPTEMBER 2002


Specifications are subject to change without notice.

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