Intemational eR] Rectifier PD-9.376H IRF840 HEXFET® Power MOSFET © Dynamic dv/at Rating © Repetitive Avalanche Rated o © Fast Switching © Ease of Paralleling © Simple Drive Requirements Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-ncustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Voss = 500V Rosyon) = 0.852 Ip = 8.0A Parameter Max. Units uous I ~ 80 uous Drain Current, Ves @ 10 V 54 A Pulsed Drain Current © 32 Po @ Te = 25°C _| Power Dissipation 125 Ww —________| Linear Derating Factor 1.0 Wee Ves Gate-to-Source Voltage 220 Vv Eas Single Pulse Avalanche Energy @ 510 md lan ‘Avalanche Current © 80 A Ear __ [Repetitive Avalanche Energy © 13 ind) viet Peak Diode Recovery dvidt @ fee 35 ving Ty ‘Operating Junction and “55 to +1560 Tete _ | Storage Temperature Range ee SHEP er Pee ee eee ere c Soldering Temperature, for 10 seconds ‘200 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.4 Nem} Thermal Resistance Parameter [Wi Typ. Max. | Units Rose ‘Junction-to-Case = = 1.0 Recs (Case-to-Sink, Flat, Greased Surface = 0.50 —__| ow Rava Junction-to-Ambient = = 2IRF840 TGR Electrical Characteristics @ Tj = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. [Units Test Conditions Vienoss | Drain-to-Souree Breakdown Voltage | 500] — | — | V_|Vos-OV, to 250A, AVigmpss/AT,| Breakdown Voltage Temp. Costticient_ | — | 0.78 | — | VPC | Reference to 25°C, lo= imA Rosi) Sialic Drain-to-Source On-Resistance_| — | — | 0.85| @ |Vos=10V, lo=4.8A © Veseny Gate Threshold Voltage 20 | — | 40 | V_|VosVos, lo= 250uA [98 Forward Transconductance 49 | = [= 1S [Vos=50V, 1p=4.8A © wer [oranosouceteviagecuen | == 1 ET ya [Mesto Vesa ce Gate-to- Source Forward Leakage = |= Tio], Gate-to-Source Reverse Leakage = [= |t00 on Total Gate Charge = [=| Ors Gate-to-Source Charge = [= Ta | ac [Qs Gate-to-Drain (‘Miller’) Charge = |= [ae Vos=10V See Fig. 6 and 13 @ ter) Tum-On Delay Time = [aT Voo=250V te Rise Time =| l=]. tao Turn-Off Delay Time —[*T= Ro=9.10 t Fall Time = [2 T= Ro=310_ See Figure 10 bo Internal Drain Inductance — jas] — ren ™ |ionamier Ls Internal Source Inductance —|75] — ae ‘onteet of Gise Tnput Capacitance = [1300 | — Vas=0V Coss ‘Output Capacitance = [sto [7 eF | vos-25v Crs Reverse Transfer Capacitance = ja | — | f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. [ Typ. | Max. | Units Test Conditions 5 Continuous Source Current He Peete MOSFET symbol ° (Body Diode) © | 4 {showing the leu Pulsed Source Current ee rete ay integral reverse © (Body Diode) © pn junction diode. Is Vso Diode Forward Voltage = | = | 20 | Vv _|1.=2556, 158.08, Ves=0V © tr Reverse Recovery Time — | 460 [970 | ns_|1,-25°C, Ir=8.08 Or Reverse Recovery Charge = [42 [8 [uc |aist=t00as © ten Forward Turn-On Time Intrinsic turn-on time is neglegible (utr-on is dominated by Ls+Lo) Notes: © Repetitive rating; pulse width limited by © Isps8.0A, diféts100A/us, VoosVieR)0ss, max. junction temperature (See Figure 11) Tyst50°C @ Vo0=50V, starting T)=25°0, L=14mH @ Pulse width < 900 is; duty cycle <2%6, Rig=250, las=8.0A (See Figure 12)IRF840 Bi = £ 3 & 6 4.50 ee '20us PULSE WIDTH] Te = 25°C wf wat Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C zg" £ 5 3 z 10 6 Vos = 50V 200s PULSE AIOTH : a ) Vos, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ip, Drain Current (Amps) Rps(on» Drain-to-Source On Resistance (Normalized) lsszen3*@9 109] ous PULSE WI0TH| Te = 150°C 109 108 Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Te=150°C ig = aon 25 2.09] os Tes =r] GT HaHa 0 BF ASB 85 100 120 140 Too Ty, dunction Temperature (°C) Fig 4. Normalized On-Resisance Vs. TemperatureIRF840 TOR = Ves = OF = RE i TLL] iss 7 Sos * S50. Soe SHORTED z Yog = 400¥ > Coa 3 Yog = 280V -—} of SU 2 oe Bn Le > ot 8 < N g © i S 2 8 8 a 5 4 3 & son 8 a & Coss, 3 | sof | oO 4 Cres [] 3 | HH = > FOR TEST CIRCUIT A ol SEE FIOURE 13 108 ‘oF ° is 304860 Vps; Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage OPERATION, IE Tris AREA CIMLTEC: = 5 $108) £ 7 3 Bos © £ § § 6 oie é gz: 8 3 és é 2 @ Ter25%e # : Typt50° we! Yes = ov te sina purse a baz 8 p28 4g? 5 i082 5 yo? 5 404 Vep, Source-to-Drain Voltage (volts) Vps; Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward VoltageIRF840 R DUT. a9 "Vo ® sol 10 i Pub Wes ts Saye s aol Fig 10a. Switching Time Test Circuit 8 & t Vos: g sors ££ | 1 | 1 | I 0 ee ’ os To, Case Temperature (°C) ton won Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature a! 3 a 3 Bor é a 5 w Eso? q paar) a = traning 10-5 1074 1079 107? On 1 10 10? tt, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF840 TGR Vary pt obtain requied Ins 1209 % + ro 3k Yop 40 orton 801 g Fig 12a. Unclamped Inductive Test Circuit Viaryoss, Eag, Single Pulse Energy (md) g / Yoo Vos. (vous 508 l Fig 12b. Unclamped Inductive Wavetorms a 7100S a8 % Starting Ty, Junction Temperature(*C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator 1 3 pur, 7Y0s ama ETL. Oe eae corn apg Ha Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit — See page 1505 Appendix B: Package Outline Mechanical Drawing — See page 1509 Appendix C: Part Marking Information — See page 1516 International Appendix E: Optional Leadforms ~ See page 1525 frer] Rectifier 274