2SK1517, 2SK1518

Silicon N-Channel MOS FET

Application
High speed power switching

Features
Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 120 ns) Suitable for motor control, switching regulator, DC-DC converter

Outline

TO-3P

D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source

2SK1517, 2SK1518
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage 2SK1517 2SK1518 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1

Symbol VDSS

Ratings 450 500 30 20 80 20 120 150 55 to +150

Unit V

V A A A W C C

2SK1517, 2SK1518
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1517 V(BR)DSS 2SK1518 V(BR)GSS I GSS 450 500 30 10 250 V A A I G = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 0.20 0.22 16 3050 940 140 35 130 240 105 1.0 120 3.0 0.25 0.27 S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/s I D = 10 A, VGS = 10 V, RL = 3 I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 Typ Max Unit V Test conditions I D = 10 mA, VGS = 0

Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current

2SK1517 I DSS 2SK1518

Gate to source cutoff voltage

Static Drain to source 2SK1517 RDS(on) on state resistance 2SK1518

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test

2SK1517, 2SK1518
Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 100
O is per lim at ite ion d in by th R is ar DS ea (o n

Maximum Safe Operation Area

30 Drain Current ID (A) 100 10 3 1 0.3

PW O pe

10 = 1 10 n m s m s

10 0 s

ra

tio

(T

(1 =

50

ot 25 ) C )

Sh

Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1

2SK1518 2SK1517

3 30 10 100 300 1,000 Drain to Source Voltage VDS (V)

Typical Output Characteristics 50 10 V 40 Drain Current ID (A) Pulse Test 30 Drain Current ID (A) 7V 6V 16 20

Typical Transfer Characteristics

VDS = 20 V Pulse Test

12

20

5V

75C

25C TC = 25C

10 VGS = 4 V 0 10 30 40 20 50 Drain to Source Voltage VDS (V)

2 6 8 4 10 Gate to Source Voltage VGS (V)

2SK1517, 2SK1518
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) () 10 Pulse Test 5 Static Drain to Source on State Resistance vs. Drain Current

2 1 0.5

Pulse Test

6 20 A 4 10 A 2 ID = 5 A

VGS = 10 V 15 V

0.2 0.1 0.05 1 2

4 12 16 8 20 Gate to Source Voltage VGS (V)

5 10 20 50 Drain Current ID (A)

100

Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Pulse Test VGS = 10 V 0.8 Forward Transfer Admittance yfs (S) 1.0 5

Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 25C TC = 25C 75C

2 1 0.5

0.6 ID = 20 A 0.4 10 A 5A 0.2

0.2 0.1 0.05 0.2

0 40

0 80 120 40 Case Temperature TC (C)

160

0.5

1 2 5 Drain Current ID (A)

10

20

2SK1517, 2SK1518
Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Ciss Capacitance C (pF) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage

2,000 1,000 500

1,000 Coss

200 100 50 0.5

100 Crss

10 1 2 5 10 20 Reverse Drain Current IDR (A) 50 0 20 10 30 40 Drain to Source Voltage VDS (V) 50

Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) VDD = 100 V 250 V 400 V VDS 300 VGS 20 500

Switching Characteristics td (off) Switching Time t (ns) 200 100 50 tf tr

400

16

12

td (on)

200 VDD = 400 V 250V 100 V ID = 20 A

20 VGS = 10 V VDD = 30 V 10 PW = 2 s, duty < 1%

100

40 120 160 80 Gate Charge Qg (nc)

0 200

5 0.5

2 5 10 20 Drain Current ID (A)

50

2SK1517, 2SK1518
Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current IDR (A) 16 Pulse Test

12 5V 8 10 V

4 VGS = 0, 10 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V)

Normalized Transient Thermal Impedance S (t)

Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 chc (t) = S (t) chc chc = 1.08C/W, TC = 25C PDM PW 1 D = PW T TC = 25C

1.0

0.05 0.02

0.03 0.01

1S
0.01 10

hot

e Puls
T 100 1m 10 m Pulse Width PW (s) 100 m

10

Switching Time Test Circuit Waveforms Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin 10 V VDD . = 30 V . td (on) 90% tr 90% td (off) tf 10% 10% Vin 10% 90%

Unit: mm
5.0 0.3 15.6 0.3 1.0
3.2 0.2

4.8 0.2 1.5

0.5

14.9 0.2

19.9 0.2

1.6 1.4 Max 2.0 2.8 18.0 0.5

1.0 0.2

2.0

0.6 0.2

3.6

0.9 1.0

5.45 0.5

5.45 0.5
Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g

0.3

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URL

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