Solved Problems About The Diodes

 ( 1022 carrier/m3) P . P-N -1

: . ( 1.21021 carrier/m3) N
. Thermal Voltage .i
. 25 .ii
. 1022 carrier/m3 NA P
. 1.21021 carrier/m3 ND N
:
VT = KT/q
= 1.3810-23(25+273) / 1.610-19
= 25.7 mV
: Barrier Potential
V0 = VT ln ( NA . ND / ni2 )
= 25.710-3 ln (1022 1.21021 / (1.51016)2)
= 0.634 V .
ni
( )
. ( Is=310-13 A) -2
VT = 25 ) VD ID .i
. ( Is = 310-13 ) ( mV
. ( VT = 28.6 mV) .ii
.iii
. (IS) ( %99)
: ID VD
ID = IS ( eVD/VT 1 )
ID = 310-13 ( e40VD -1 )
VD ID
VD . VD ID :
VD
.
.
.
:

)ID (Ampere

)VD (Volt

1.607944501E-11

0.1

8.939873961E-10

0.2

1.455495583E-4

0.5

7.946736639E-3

0.6

0.433877119

0.7

23.68888805

0.8

0.05

1.91671683E-12

) (1 .

25 VT 28.6 .
) (1 . :
. . 2 .
: IS
:
IS2 = IS1 (1+.08)2T
2T .
0.08 ) (
. .
VD
:
-:
40VD
) -1
0.99Is = IS ( e
: VD
VD1 = 17.203 mV
-:
34.965VD
0.99Is = IS ( e
) -1
:
VD2 = 19.68 mV

(1 )

-3
-: VT .i
. 50 - . 100 - . 25 -
. 25 ( IS = 310-13 A ) .ii
( 0.6 V)
:
. 50 - . 25 -
2
(Ni) ( IS Ni )
. %8
-:
VT1 = KT/q = 1.38E-23 (25+273) / 1.6E-19 = 25.7 mV
VT2 = KT/q = 1.38E-23 (100+273) / 1.6E-19 = 32.17 mV
VT3 = KT/q = 1.38E-23 (50+273) / 1.6E-19 = 27.85 mV

-:
:
IS = 3E-13 A at 25C , VD = 0.6 V
: 25 ID
ID = IS (Exp(VD/VT)-1)
ID = 3E-13(Exp(0.6/25.7E-3)-1) = 4.133 mA
: 50
ID = IS (Exp(VD/VT)-1)
ID = 3E-13(Exp(0.6/27.85E-3)-1)
3

 IS .
. . . !! . :2T
)IS2 = IS1 (1.08
) . ( % 8 :
)IS2 = 3E-13(1.08)2 (50-25
IS2 = 1.407E-11 A
:
)ID = IS (Exp(VD/VT)-1
)ID = 1.407E-11 (Exp(0.6/27.85E-3)-1
ID = 31.968 mV
...
-4

. 100

25 0.7
) (
2 ). (2

) (2

 :
2 0.7
. 25 100
25 100
:
Each 1C Increase will decrease the voltage by 2mV
T = T2 T1 = 100 25 = 75C
The decrease of voltage = 752mV = 150 mV

25
: 100
VK2 = 0.7 0.15 = 0.55 V .
-5

) ( IS = 5nA
10nA 15 .
30 .

:
IRev = IS + IL
:
IRev = IS + IL = 5 nA + 10 nA = 15 nA .
) ( 30 :
IRev = IS + 2 IL = 5 nA + 20 nA = 25 nA .

.
-6 ) (3 .
:
.i .
.ii .
.iii . R
.iv .
.

) (3

) . (4
:
V = IDR+VD
:
1V = 14.3 ID+VD
. ID VD
Operating Point
:
When ID = 0 VD = 1V
When VD = 0 ID = 1/14.3 = 69.93 mA
) (4


.
) (5 :

) (5

VDQ IDQ : R
:
VDQ = 0.6 V & IDQ = 27.5 mA
:
VR = 1- 0.6 = 0.4 V
P = VDID = 0.627.5E-3 = 16.5 mW
:
. 27.5 0.6 . R 0.4 . . 16.5 27.5
) R (
:
IR = VR/RR = 0.4 / 14.3 = 27.9 mA
.
-7

) (6

.
.

: ID VD
. . . . .
.
Open
Circuit . Short Circuit
ID ) (
VD R2 R2
:
VD = VR2 = VR2/(R1+R2) = 105/55 = 0.909 V
ID VD ) ( .
Short Circuit R2
) ( . ID
. R1 :
ID = IR1 = V/R1 = 10/50 = 200 mA
ID VD

. 70
) (7 :

(7 )

IR IF
RF .
. RR
Diode
1N914
1N4001
1N1185

IF
10mA at 1V
1A at 1.1V
10A at 0.95 V

-8

IR
25nA at 20V
10 A at 50V
4.6 mA at 100V
:

Diode
1N914
1N4001
1N1185

RF
RF=1/10E-3 = 100
RF=1.1/1 = 1.1
RF=0.95/10 = 95m

RR
RR=20/25E-9 = 800M
RR=50/10E-9 = 5
RR=100/4.6E-3 = 21.73K

Burglar alarms -9
. Computers
.

) (7

. D1 )
( 12 ) (
D2 9 .
9 D2
12 )
( .
:
. 9
12 )
( .
. .
12
) (
12 . ! .
12
9
.
:
:D1 ON Short Circuit .
D2 OFF Open Circuit .
12 :D1 OFF Open Circuit
D2 ON Short Circuit

10

 -10 5
. .

)( 8

)( 9

) ( 10

R3
. Superposition Theorem
:
11

 0.7 ) ( R5 :RT = 33.33K

IR1 = 12/33.33E+3 = 0.36 mA
VR3 = 12 0.36E-330E+3 = 1.2 V
IR5 = 1.2/5E+3 = 0.24 mA
12 ) ( R5 :RT = 12.5K
IR5 = 0.7/12.5E+3 = 0.056 mA
0.056 0.24
. 0.24
R5 :
IR5 = 0.24E-3 - 0.056E-3 = 0.184 mA
) (11 :

)(11

-11 1mA
:
.i R 5mA .
R .ii
V . .

) (9

12

 -:
R :
R=(V-VK) / ID = ( 5-0.7) / 5E-3 = 860
.
-:
.

. 1
:
R=(V-VK) / ID
:
(V- 0.7) / 860 1 mA
1
.
V :
(V 0.7 ) / 860 = 1E-3
V 1.56 V
1.56 : .

13