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FQA6N70

December 2000

QFET
FQA6N70
700V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.

TM

Features
6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D
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"

G!

! "
" "

G DS

TO-3P
FQA Series
TC = 25C unless otherwise noted

Absolute Maximum Ratings


Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQA6N70 700 6.4 4.05 25.6 30


(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

600 6.4 15.2 4.5 152 1.22 -55 to +150 300

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.82 -40 Units C/W C/W C/W

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 700 ------0.78 ------10 100 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.2 A VDS = 50 V, ID = 3.2 A
(Note 4)

3.0 ---

-1.16 6.4

5.0 1.5 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1100 125 15 1400 150 120 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 560 V, ID = 6.2 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)

VDD = 350 V, ID = 6.2 A, RG = 25

--------

25 70 55 50 30 6.5 13

60 150 120 110 40 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings


IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 6.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6.2 A, dIF / dt = 100 A/s
(Note 4)

------

---340 2.7

6.4 25.6 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 27.2mH, IAS = 6.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Typical Characteristics

10

ID, Drain Current [A]

ID , Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

150

10

10

25

-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

10

RDS(ON) [ ], Drain-Source On-Resistance

VGS = 10V VGS = 20V


2

IDR , Reverse Drain Current [A]

10

150

25
Notes : 1. VGS = 0V 2. 250 s Pulse Test

Note : TJ = 25

0 0 4 8 12 16 20

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

2000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

VDS = 140V
10

1600

VDS = 350V VDS = 560V

VGS , Gate-Source Voltage [V]

Ciss

Capacitance [pF]

1200

Coss
800
Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss
400

2
Note : ID = 6.2 A

0 -1 10

0 10
0

10

10

15

20

25

30

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Norm alized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 3.1 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

7
10
2

Operation in This Area is Limited by R DS(on)

10

10 s 100 s

ID, Drain Current [A]

ID, Drain Current [A]


10
3

1 ms 10 ms DC
10
0

10

-1

Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse


o o

10

-2

10

10

10

0 25

50

75

100

125

150

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

Z ( t ) , T h e r m a l R e s p o n s e

10

D = 0 .5 0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

N otes : 1 . Z J C( t ) = 0 . 8 2 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )

PDM t1 t2

JC

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]

Figure 11. Transient Thermal Response Curve

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2000 Fairchild Semiconductor International

Rev. A2, December 2000

FQA6N70

Package Dimensions

TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 3.20 0.10 9.60 0.20 4.80 0.20 1.50 0.05
+0.15

12.76 0.20

19.90 0.20

16.50 0.30

3.00 0.20 1.00 0.20

3.50 0.20

2.00 0.20

13.90 0.20

23.40 0.20

18.70 0.20

1.40 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.60 0.05

+0.15

2000 Fairchild Semiconductor International

Rev. A2, December 2000

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO

HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6

SuperSOT-8 SyncFET TinyLogic UHC VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms


Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. A, January 2000

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