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December 2000
QFET
FQA6N70
700V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supply.
TM
Features
6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G!
! "
" "
G DS
TO-3P
FQA Series
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.82 -40 Units C/W C/W C/W
FQA6N70
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 700 ------0.78 ------10 100 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.2 A VDS = 50 V, ID = 3.2 A
(Note 4)
3.0 ---
-1.16 6.4
5.0 1.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1100 125 15 1400 150 120 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 560 V, ID = 6.2 A, VGS = 10 V
(Note 4, 5) (Note 4, 5)
--------
25 70 55 50 30 6.5 13
ns ns ns ns nC nC nC
------
---340 2.7
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 27.2mH, IAS = 6.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQA6N70
Typical Characteristics
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
150
10
10
25
-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
10
-1
10
-1
10
10
10
-1
10
10
10
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0 0 4 8 12 16 20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 140V
10
1600
Ciss
Capacitance [pF]
1200
Coss
800
Notes : 1. VGS = 0 V 2. f = 1 MHz
Crss
400
2
Note : ID = 6.2 A
0 -1 10
0 10
0
10
10
15
20
25
30
FQA6N70
Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 3.1 A
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
7
10
2
10
10 s 100 s
1 ms 10 ms DC
10
0
10
-1
10
-2
10
10
10
0 25
50
75
100
125
150
Z ( t ) , T h e r m a l R e s p o n s e
10
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N otes : 1 . Z J C( t ) = 0 . 8 2 /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )
PDM t1 t2
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
FQA6N70
VGS
DUT
3mA
Charge
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
10V
FQA6N70
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
FQA6N70
Package Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 3.20 0.10 9.60 0.20 4.80 0.20 1.50 0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
0.60 0.05
+0.15
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO
HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production