FQP6N60C/FQPF6N60C

QFET
FQP6N60C/FQPF6N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features
5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D
!

G! G DS

TO-220
FQP Series

GD S

TO-220F
FQPF Series
!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP6N60C 600 5.5 3.3 22

FQPF6N60C 5.5 * 3.3 * 22 * 30 300 5.5 12.5 4.5

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

125 1.0 -55 to +150 300

40 0.31

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP6N60C 1.0 0.5 62.5 FQPF6N60C 3.2 -62.5 Units C/W C/W C /W

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.75 A VDS = 40 V, ID = 2.75 A
(Note 4)

2.0 ---

-1.7 4.8

4.0 2.0 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5A, VGS = 10 V
(Note 4, 5)

VDD = 300 V, ID = 5.5A, RG = 25

(Note 4, 5)

--------

15 45 45 45 16 3.5 6.5

40 100 100 100 20 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s
(Note 4)

------

---310 2.1

5.5 22 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.2mH, IAS = 5.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Typical CharacteristicsTypical Characteristics

(Continued)

10

ID, Drain Current [A]

10

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :

10

150 C -55 C
10
0

25 C

10

-1

Notes : 1. 250 s Pulse Test 2. TC = 25

Notes : 1. VDS = 40V 2. 250 s Pulse Test

10

-2

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

RDS(ON) [ ], Drain-Source On-Resistance

VGS = 10V
4

IDR, Reverse Drain Current [A]

10

10

VGS = 20V

150 25
Notes : 1. VGS = 0V 2. 250s Pulse Test
-1

1
Note : TJ = 25

10

12

14

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12

1000

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

10

VGS, Gate-Source Voltage [V]

VDS = 120V VDS = 300V

800

Capacitances [pF]

Ciss

VDS = 480V

600

Coss
400
Note ; 1. VGS = 0 V 2. f = 1 MHz

200

Crss

2
Note : ID = 5.5A

0 -1 10

10

10

12

16

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Typical Characteristics

(Continued)

1.2

3.0

BVDSS, (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON), (Normalized) Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0
Notes : 1. VGS = 10 V 2. ID = 2.5 A

0.9

Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs Temperature

Figure 8. On-Resistance Variation vs Temperature

Operation in This Area is Limited by R DS(on)

10

100 s 1 ms
10
1

Operation in This Area is Limited by R DS(on)

10 s 100 s 1 ms 10 ms

ID, Drain Current [A]

10

ID, Drain Current [A]

10 ms 100 ms DC

10

DC

10

-1

Notes : o 1. TC = 25 C

10

-1

Notes :

2. TJ = 150 C 3. Single Pulse

1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

2 3

10

-2

10

10

10

10

10

-2

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for FQP6N60C

Figure 9-2. Maximum Safe Operating Area for FQPF6N60C

ID, Drain Current [A]

0 25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current vs Case Temperature

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Typical Characteristics

(Continued)

10

D = 0 .5

Z JC(t), Thermal Response

0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

N o te s : 1 . Z J C (t) = 1 .0 0 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)

PDM t1 t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP6N60C

D = 0 .5

Z JC(t), Thermal Response

10

0 .2 0 .1 0 .0 5
10
-1

0 .0 2 0 .0 1 s in g le p u ls e

N o te s : 1 . Z J C (t) = 3 .2 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z J C (t)

PDM t1 t2
0 1

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF6N60C

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS 10V Qgs Qg

VGS

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS RG 10V VGS

RL VDD

VDS

90%

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG 10V
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp

DUT

VDS (t) Time

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2004 Fairchild Semiconductor Corporation

Rev. A, March 2004

FQP6N60C/FQPF6N60C

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. A, March 2004

FQP6N60C/FQPF6N60C

Package Dimensions

(Continued)

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. A, March 2004

15.87 0.20

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Preliminary

First Production

No Identification Needed

Full Production

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Rev. I10