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Electric and Hitachi XX, to Renesas Technology Corp.

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these changes do not constitute any alteration to the contents of the document itself.

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Renesas Technology Corp.

Customer Support Dept.
April 1, 2003
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contained therein.
 PF08109B
MOS FET Power Amplifier Module
for E-GSM and DCS1800 Dual Band Handy Phone

ADE-208-821C (Z)

Rev.3
Feb. 2001

Application
• Dual band Amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz)
• For 3.5 V nominal battery use

Features
• 2 in / 2 out dual band amplifire
• Simple external circuit including output matching circuit
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ
• High efficiency : 50% Typ at nominal output power for E-GSM
43% Typ at 32.7 dBm for DCS1800

Pin Arrangement

• RF-O-12 1: N/C
2: N/C
6 3: Pout DCS
7 5
8 G G 4: Vdd DCS
4
3 5: Vdd GSM
9
10 6: Pout GSM
G 2
11 1 G 7: N/C
12
8: Vtxlo
9: Pin GSM
10: Vapc GSM
11: Vapc DCS
12: Pin DCS
G: GND
PF08109B

Absolute Maximum Ratings

(Tc = 25°C)

Item Symbol Rating Unit

Supply voltage Vdd 8 V
Supply current Idd GSM 3 A
Idd DCS 2 A
Vtxlo voltage Vtxlo 4 V
Vapc voltage Vapc 4 V
Input power Pin 10 dBm
Operating case temperature Tc (op) −30 to +100 °C
Storage temperature Tstg −30 to +100 °C
Output power Pout GSM 5 W
Pout DCS 3 W
Note: The maximum ratings shall be valid over both the E-GSM-band (880 MHz to 915 MHz),
and the DCS1800-band (1710 MHz to 1785 MHz).

Electrical Characteristics for DC

(Tc = 25°C)

Item Symbol Min Typ Max Unit Test Condition

Drain cutoff current Ids   100 µA Vdd = 8 V, Vapc = 0 V
Vapc control current Iapc   3 mA Vapc =2.2 V
Vtxlo control current Itxlo   100 µA Vtxlo = 2.4 V

Rev.3, Feb. 2001, page 2 of 23

 PF08109B

Electrical Characteristics for E-GSM mode

(Tc = 25°C)

Test conditions unless otherwise noted:

f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc DCS = 0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.

Item Symbol Min Typ Max Unit Test Condition

Frequency range f 880  915 MHz
Total efficiency (Hi) ηT(Hi) 41 50  % Pout GSM = 35.5dBm, Vtxlo = 0.1V,
Vapc GSM = controlled
2nd harmonic distortion 2nd H.D.  −45 −38 dBc
3rd harmonic distortion 3rd H.D.  −45 −40 dBc
Input VSWR VSWR (in)  1.5 3 
Total efficiency (Lo) ηT(Lo) 27 35  % Pout GSM = 30.8dBm, Vtxlo = 2.4V,
Vapc GSM = controlled
Output power (1)(Hi) Pout (1)(Hi) 35.5 36.0  dBm Vapc GSM = 2.2V, Vtxlo = 0.1V
Output power (1)(Lo) Pout (1)(Lo) 30.8 31.3  dBm Vapc GSM = 2.2V, Vtxlo = 2.4V
Output power (2)(Hi) Pout (2)(Hi) 33.5 34.0  dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 0.1V
Output power (2)(Lo) Pout (2)(Lo) 28.8 29.3  dBm Vdd GSM = 3.0V, Vapc GSM = 2.2V,
Tc = +85°C, Vtxlo = 2.4V
Isolation   −42 −36 dBm Vapc GSM = 0.2V, Vtxlo = 0.1V
Isolation at DCS RF-output   −23 −17 dBm Pout GSM = 35.5dBm, Vtxlo = 0.1V
when GSM is active Measured at f = 1760 to 1830MHz
Switching time t r, t f  1 2 µs Pout GSM = 0 to 35.5dBm,
Vtxlo = 0.1V
Stability  No parasitic oscillation  Vdd GSM = 3.0 to 5.1V,
Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM ≤ 2.2V, GSMpulse. Rg = 50Ω,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance  No degradation  Vdd GSM = 3.0 to 5.1V, t = 20sec.,
Pout GSM ≤ 35.5dBm, Vtxlo = 0.1, 2.4V,
Vapc GSM ≤ 2.2V, GSM pulse. Rg = 50Ω,
Output VSWR = 10 : 1 All phases

Rev.3, Feb. 2001, page 3 of 23

PF08109B

Electrical Characteristics for DCS1800 mode

(Tc = 25°C)

Test conditions unless otherwise noted:

f = 1710 to 1785 MHz, Vdd DCS = 3.5 V, Pin DCS = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc GSM =0.1 V
Pulse operation with pulse width 577 µs and duty cycle 1:8 shall be used.

Item Symbol Min Typ Max Unit Test Condition

Frequency range f 1710  1785 MHz
Total efficiency (Hi) ηT(Hi) 36 43  % Pout DCS = 32.7dBm,
Vapc DCS = controlled
2nd harmonic distortion 2nd H.D.  −45 −38 dBc
3rd harmonic distortion 3rd H.D.  −45 −40 dBc
Input VSWR VSWR (in)  1.5 3 
Total efficiency (Lo) ηT(Lo) 17 25  % Pout DCS = 26.7dBm,
Vapc DCS = controlled
Output power (1) Pout (1) 32.7 33.2  dBm Vapc DCS = 2.2V,
Output power (2) Pout (2) 30.7 31.2  dBm Vdd DCS = 3.0V, Vapc DCS = 2.2V,
Tc = +85°C
Isolation   −42 −36 dBm Vapc DCS = 0.2V
Isolation at GSM RF-output   −10 0 dBm Pout DCS = 32.7dBm,
when DCS is active Measured at f = 1710 to 1785MHz
Switching time t r, t f  1 2 µs Pout DCS = 0 to 32.7dBm
Stability  No parasitic oscillation  Vdd DCS = 3.0 to 5.1V,
Pout DCS ≤ 32.7dBm, Vapc DCS ≤ 2.2V,
DCS pulse. Rg = 50Ω,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance  No degradation  Vdd DCS = 3.0 to 5.1V,
Pout DCS ≤ 32.7dBm, t = 20sec.,
Vapc DCS ≤ 2.2V, DCS pulse. Rg = 50Ω,
Output VSWR = 10 : 1 All phases

Rev.3, Feb. 2001, page 4 of 23

 PF08109B

Characteristic Curves

High mode, f = 880 MHz

40 55
f = 880 MHz,
30 Vdd = 3.5 V, Pout 50
Vapc = control,
20 Vtxlo = 0.1 V, 45
Pin = 0 dBm,
10 Tc = 25°C,
40
Rg = Rl = 50 Ω Eff
Pout (dBm)

0 35

Eff (%)
−10 30
−20 25
−30 20
−40 15
−50 10
−60 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

Low mode, f = 880 MHz

40 55
f = 880 MHz,
30 Vdd = 3.5 V, 50
Vapc = control, Pout
20 Vtxlo = 2.4 V, 45
Pin = 0 dBm,
10 Tc = 25°C, 40
Rg = Rl = 50 Ω
Pout (dBm)

0 35
Eff (%)

Eff
−10 30
−20 25
−30 20
−40 15
−50 10
−60 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

Rev.3, Feb. 2001, page 5 of 23

PF08109B

High mode, f = 915 MHz

40 55
f = 915 MHz,
30 Vdd = 3.5 V, Pout 50
Vapc = control,
20 Vtxlo = 0.1 V, 45
Pin = 0 dBm,
10 Tc = 25°C,
40
Rg = Rl = 50 Ω Eff
Pout (dBm)

0 35

Eff (%)
−10 30
−20 25
−30 20
−40 15
−50 10
−60 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

Low mode, f = 915 MHz

40 55
f = 915 MHz,
30 Vdd = 3.5 V, 50
Vapc = control, Pout
20 Vtxlo = 2.4 V, 45
Pin = 0 dBm,
10 Tc = 25°C, 40
Rg = Rl = 50 Ω
Pout (dBm)

0 35
Eff (%)

Eff
−10 30
−20 25
−30 20
−40 15
−50 10
−60 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

Rev.3, Feb. 2001, page 6 of 23

 PF08109B

38
Vdd = 3.5 V,
Vapc = 2.2 V,
High mode Pin = 0 dBm,
37 Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
Pout (dBm) 36

Low mode
35

34

33
800 840 880 920 960 1000
f (MHz)

50
High mode
45

40

35
Eff (%)

Vdd = 3.5 V,
30 Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
25 Rg = Rl = 50 Ω
Low mode High mode: Pout = 35.5 dBm
20 Vtxlo = 0.1 V
Low mode: Pout = 30.8 dBm
Vtxlo = 2.4 V
15
800 840 880 920 960 1000
f (MHz)

Rev.3, Feb. 2001, page 7 of 23

PF08109B

High mode
38
Vdd = 3.5 V,
Vapc = 2.2 V,
Vtxlo = 0.1 V,
37 Tc = 25°C, f = 880 MHz
Rg = Rl = 50 Ω
Pout (dBm)
36
f = 915 MHz

35

34

33
−6 −4 −2 0 2 4 6
Pin (dBm)

Low mode
38
Vdd = 3.5 V,
Vapc = 2.2 V,
Vtxlo = 2.4 V,
37 Tc = 25°C,
Rg = Rl = 50 Ω
Pout (dBm)

36 f = 880 MHz

35
f = 915 MHz

34

33
−6 −4 −2 0 2 4 6
Pin (dBm)

Rev.3, Feb. 2001, page 8 of 23

 PF08109B

High mode
60

55
f = 915 MHz
50

45 f = 880 MHz
Eff (%)

40

35
Pout = 35.5 dBm,
30 Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
25 Tc = 25°C,
Rg = Rl = 50 Ω
20
−6 −4 −2 0 2 4 6
Pin (dBm)

High mode
60

55
f = 915 MHz
50

45
Eff (%)

f = 880 MHz
40

35
Pout = 34.8 dBm,
30 Vdd = 3.5 V,
Vapc = control,
Vtxlo = 0.1 V,
25 Tc = 25°C,
Rg = Rl = 50 Ω
20
−6 −4 −2 0 2 4 6
Pin (dBm)

Rev.3, Feb. 2001, page 9 of 23

PF08109B

Low mode
60
Pout = 30.8 dBm,
Vdd = 3.5 V,
55
Vapc = control,
Vtxlo = 2.4 V,
50 Tc = 25°C,
Rg = Rl = 50 Ω
45
Eff (%)

40
f = 915 MHz
35

30
f = 880 MHz
25

20
−6 −4 −2 0 2 4 6
Pin (dBm)

Rev.3, Feb. 2001, page 10 of 23

 PF08109B

60
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
50 Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Eff (%) 40 Low mode: Vtxlo = 2.4 V

30
Low mode

20
High mode

10
26 28 30 32 34 36 38
Pout (dBm)

4
f = 880 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
3 Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
Id (A)

1
High mode
Low mode
0
−20 −10 0 10 20 30 40
Pout (dBm)

Rev.3, Feb. 2001, page 11 of 23

PF08109B

60

50

Eff (%) 40

Low mode
30 f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
High mode Pin = 0 dBm,
20 Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
10
26 28 30 32 34 36 38
Pout (dBm)

4
f = 915 MHz,
Vdd = 3.5 V,
Vapc = control,
Pin = 0 dBm,
3 Tc = 25°C,
Rg = Rl = 50 Ω
High mode: Vtxlo = 0.1 V
Low mode: Vtxlo = 2.4 V
Id (A)

High mode
1

Low mode
0
−20 −10 0 10 20 30 40
Pout (dBm)

Rev.3, Feb. 2001, page 12 of 23

 PF08109B

f = 1710 MHz
40 50
f = 1710 MHz,
30 Vdd = 3.5 V, 45
Vapc = control,
20 Pin = 0 dBm, 40
Tc = 25°C,
10 Rg = Rl = 50 Ω 35
Pout (dBm)

Eff (%)
0 30
Pout
−10 25
Eff
−20 20

−30 15

−40 10

−50 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

f = 1785 MHz
40 50
f = 1785 MHz,
30 Vdd = 3.5 V, 45
Vapc = control,
20 Pin = 0 dBm, 40
Tc = 25°C,
10 Rg = Rl = 50 Ω 35
Pout (dBm)

Eff (%)

0 30
Pout Eff
−10 25

−20 20

−30 15

−40 10

−50 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vapc (V)

Rev.3, Feb. 2001, page 13 of 23

PF08109B

50
Vdd = 3.5 V,
45 Vapc = control,
Pin = 0 dBm,
Tc = 25°C,
40 Rg = Rl = 50 Ω

35
Eff (%)
f = 1785 MHz
30

25
f = 1710 MHz
20

15

10
22 24 26 28 30 32 34
Pout (dBm)

Rev.3, Feb. 2001, page 14 of 23

 PF08109B

35

34

Pout (dBm) 33

32

Vdd = 3.5 V,
Vapc = 2.2 V,
31
Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
30
1600 1650 1700 1750 1800 1850 1900
f (MHz)

50

45
Pout = 32.7 dBm
40

35
Eff (%)

30

25 Pout = 26.7 dBm

Vdd = 3.5 V,
20 Vapc = control,
Pin = 0 dBm,
15 Tc = 25°C,
Rg = Rl = 50 Ω
10
1600 1650 1700 1750 1800 1850 1900
f (MHz)

Rev.3, Feb. 2001, page 15 of 23

PF08109B

35
Vdd = 3.5 V,
Vapc = 2.2 V,
Pin = 0 dBm, f = 1710 MHz
34 Tc = 25°C,
Rg = Rl = 50 Ω

Pout (dBm) 33 f = 1785 MHz

32

31

30
−6 −4 −2 0 2 4 6
Pin (dBm)

50
Vdd = 3.5 V,
Vapc = control,
f = 1785 MHz
Pout = 32.7 dBm,
45 Tc = 25°C,
Rg = Rl = 50 Ω
f = 1710 MHz
40
Eff (%)

35

30

25
−6 −4 −2 0 2 4 6
Pin (dBm)

Rev.3, Feb. 2001, page 16 of 23

 PF08109B

35
Vdd = 3.5 V,
Vapc = control,
Pout = 26.7 dBm,
30 Tc = 25°C,
Rg = Rl = 50 Ω
f = 1785 MHz
25
Eff (%)
f = 1710 MHz
20

15

10
−6 −4 −2 0 2 4 6
Pin (dBm)

0
Vdd = 3.5 V,
Vapc = control,
−5 Pin = 0 dBm,
Tc = 25°C,
Rg = Rl = 50 Ω
−10
Cross band Isolation

when DCS is active

at GSM RF-output

−15 f = 1785 MHz

(dBm)

−20
f = 1710 MHz
−25

−30

−35
15 20 25 30 35
Pout (dBm)

Rev.3, Feb. 2001, page 17 of 23

PF08109B

40
GSM Hi mode
39 Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C,
38 Vtxlo = 0.1 V

Pout (dBm) 37

36

35

34

33 f = 880 MHz
f = 915 MHz
32
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

38
GSM Lo mode
37 Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C,
36 Vtxlo = 2.4 V

35
Pout (dBm)

34

33

32

31 f = 880 MHz
f = 915 MHz
30
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

Rev.3, Feb. 2001, page 18 of 23

 PF08109B

50

45

40
Eff (%)

35
GSM Hi mode
30 Pin = 0 dBm,
Po = 35.5 dBm,
Tc = 25°C,
25 Vtxlo = 0.1 V
f = 880 MHz
f = 915 MHz
20
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

40

35

30
Eff (%)

25
GSM Lo mode
20 Pin = 0 dBm,
Po = 30.8 dBm,
Tc = 25°C,
15 Vtxlo = 2.4 V
f = 880 MHz
f = 915 MHz
10
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

Rev.3, Feb. 2001, page 19 of 23

PF08109B

38
DCS
37 Pin = 0 dBm,
Vapc = 2.2 V,
Tc = 25°C
36 f = 1710 MHz
f = 1785 MHz
Pout (dBm) 35

34

33

32

31

30
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

45

40

35
Eff (%)

30
DCS
Pin = 0 dBm,
Po = 32.7 dBm,
25 Tc = 25°C
f = 1710 MHz
f = 1785 MHz
20
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2
Vdd (V)

Rev.3, Feb. 2001, page 20 of 23

 PF08109B

0
f = 880 MHz,
Vdd = 3.5 V,
−10 Vapc = control,

Isolation at DCS RF-output

Vtxlo = 0.1 V,
Pin = 0 dBm,

when GSM is active

−20 Tc = 25°C,
Rg = Rl = 50 Ω
(dBm)
−30 measured at
f = 1760 MHz

−40

−50

−60
10 15 20 25 30 35 40
Pout (dBm)

0
f = 915 MHz,
Vdd = 3.5 V,
−10 Vapc = control,
Isolation at DCS RF-output

Vtxlo = 0.1 V,
Pin = 0 dBm,
when GSM is active

−20 Tc = 25°C,
Rg = Rl = 50 Ω
(dBm)

−30 measured at
f = 1830 MHz

−40

−50

−60
10 15 20 25 30 35 40
Pout (dBm)

Rev.3, Feb. 2001, page 21 of 23

PF08109B

Package Dimensions

Unit: mm

1.8 ± 0.2
8 G 7
9 6
10 5
11.0 ± 0.3

11.0 ± 0.3
(10.8)

G G

11 4
12 3
1 G 2 6
7 5
(Upper side) 8 G G
4
3
9
10
G 2
11 1 G
12
13.75 ± 0.3 1: N/C
13.75 ± 0.3 2: N/C
(3.3) (3.3) 3: Pout DCS
(1.4) (1.0) (3.4) (1.0) (1.4) 4: Vdd DCS
5: Vdd GSM
6: Pout GSM
(1.4)

(1.0) (1.0) (2.8) (1.0) (1.0)

(1.2)
7: N/C
(0.8)
8: Vtxlo
(4.6)

(1.4)
9: Pin GSM
(2.6) (2.6)
(2.4) (2.4)
11.0 ± 0.3

(1.0) (0.8)
10: Vapc GSM
(1.4)
11: Vapc DCS
(0.8)
12: Pin DCS
(4.6)

(1.4) (1.45)
G: GND
Remark:
Coplanarity of bottom side of terminals
(1.1) (3.7) (3.7) (1.2) are less than 0 ± 0.1mm.
(2.5) (2.5)
Hitachi Code RF-O-12
(Bottom side) JEDEC 
JEITA 
Mass (reference value) 

Rev.3, Feb. 2001, page 22 of 23

 PF08109B

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they
do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,
programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these
materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers
contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed
herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information
as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage,
liability or other loss resulting from the information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially
at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained
herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be
imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.

http://www.renesas.com

Copyright © 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
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Rev.3, Feb. 2001, page 23 of 23