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EE101 Engineering Electromagnetics Winter 2014

1/15/14
Homework #2

Due: Wednesday Jan 22 8:00 AM
Hand in to the TA at beginning of class. No late homework is accepted (see grading policy
posted on eeweb).

6e=6
th
edition, 5e = 5
th
edition

Problem #1 (10 points) Find the capacitance per unit length of the coaxial line shown in
Fig. 4-25 in Ulaby.



Problem #2 (30 points) Coaxial capacitor
Consider a piece of coaxial cable of length l with two dielectric layers with permittivities c
1
and
c
2
. You may consider the inner conductor (radius a) and the outer conductor shell (radius 4a) to
be perfect conductors.


(a) What is the capacitance C between the inner and outer conductors? (Your answer should
be in terms of only geometric and material parameters.)

(b) Consider that the dielectric layers are lossy with conductivities
1
and
2
respectively.
What is the resistance R between the inner and outer conductors?


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Problem #3 (30 points) Poissons Equation and Dielectric relaxation


Consider a leaky parallel-plate capacitor with area A, thickness d, and a lossy dielectric with
permittivity c and non-zero (but small) Ohmic conductivity o. At time t = 0, there is a free
volume charge density (x,t=0) =
0
x/d inside the dielectric (0<x<d). You may neglect any
fringing fields (i.e. assume width d) to use a 1D model. The two perfectly conducting plates of
the capacitor are short-circuited together.

(a) At time t=0, what is the potential V(x,t=0) and the electric field E(x,t=0) in between the
conducting plates? Use Poissons equation for the dielectric and apply the boundary
conditions set by the plates. (You can ignore any time dependence and conductivity for
the initial condition at time t=0, because any free charge hasnt had time to react yet).
(b) Given this initial condition, what is the charge density (x,t) as a function of time?
To solve this, use the charge continuity equation that we discussed in class, and substitute
Ohms law to obtain a first order partial differential equation that describes the time
evolution of (x,t). (We discussed in class it is also discussed in Chapter 6.9-6.10).
(c) Use your expression for (x,t) and find E(x,t) as a function of time.


(d) What is the surface charge density
s
at x=0 and x=d as a function of time?
(e) What is the short circuit current i(t) as a function of time?

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Problem #4 (30 points) Semiconductor p-n junctions

The junction between positively (p)-doped and negatively (n)-doped silicon is at the heart of
modern semiconductor devices, including p-n diodes and transistors. We can model an abrupt
junction as a dielectric material ( = 11.9
0
for silicon) with four regions with charge density
(x).

0
0 0
0
0
0
0 for
for 0,
( )
for 0 ,
0 for +
x x
x x
x
x x
x x

<

=

< +

<
<


In this expression,
0
is a constant charge density, and x
0
is a length of the depletion region on the
p-side (-x
0
<x<0) and n-side (0<x<x
0
). The problem has planar symmetry, so there is no variation
of in the y or z directions.

Without worrying about the physics of how these charge distributions are created, we can find
the electric field and scalar potential within the junction region.

(a) The Electric field is zero in the regions x<-x
0
and x>x
0
. Derive a piecewise expression for
E(x) in the region between x
0
<x<0 and 0<x<x
0
.
(b) Find an expression for the scalar potential V(x) in the region x
0
<x<x
0
. You may assume
that V(-x
0
)=0.
(c) The potential difference V(x
0
)-V(-x
0
) is known as the built-in potential of a
semiconductor junction. Using the values
0
=160C/m
3
, and x
0
=0.65m what is the built-
in potential for this junction?

(While it is not necessary to know this to solve the problem, this charge distribution is created at
the interface between n-doped and p-doped semiconductor. The positive charge is created by
ionized donor atom cores, and the negative charge is created by ionized acceptor atom cores. The
values given above are typical for a Si p-n junction with doping levels N
A
=N
D
=10
15
cm
-3
. This
material is covered in great detail in EE2. )

(d) There are other types of junctions where the charge distribution is not so abrupt. These
are called graded junctions. Find E(x) and V(x) for the following charge distribution:


0
0 0
0
0 for
( ) for
0 for +
x x
x Gx x x x
x x

= <

s
<

,
where G is a constant of units (C/m
4
)