MOSFET Dosimetry for Radiotherapy

MOSFET MOSFET dosimetry in dosimetry in MOSFET MOSFET dosimetry in dosimetry in
radiotherapy radiotherapy
Joanna E.Cygler
1
and Paolo Scalchi
2
Joanna E.Cygler and Paolo Scalchi
1
Th Ott H it l R i l C C t Ott C d
1
The Ottawa Hospital Regional Cancer Centre, Ottawa, Canada
2
Department of Medical Physics, San Bortolo Hospital, Vicenza, Italy
The Ottawa LHopital The Ottawa L Hopital
Hospital dOttawa
Regional Cancer Centre
Disclosure Disclosure Disclosure Disclosure
The authors have received research support
from Thomson-Nielsen, Best Medical Canada
d Si l T h l i I and Sicel Technologies, Inc.
Cygler, MOSFET dosimetry, AAPM Summer School 2009
Outline Outline
Principles of MOSFET dosimetry
Brief description of commercially available MOSFET
systems systems
Dosimetric characteristics of MOSFET detectors
Temperature dependence p p
Energy dependence
Dose and dose rate dependence
Time dependence (other than the dose-rate dependence) Time dependence (other than the dose-rate dependence)
Angular dependence
Advantages and disadvantages
Clinical dosimetry applications
Summary
MOSFET structure MOSFET structure MOSFET structure MOSFET structure
Metal Oxide Semiconductor
Field Effect Transistor
Capable of dose measurements
immediately after irradiation or
can be sampled in predefined
time intervals (on-line
dosimetry)
Can operate in active (negative
bias on gate during radiation) or
passive mode
Soubra, Cygler, Mackay, Med. Phys. Soubra, Cygler, Mackay, Med. Phys. 21(4) 21(4), 567 , 567- -572, 1994 572, 1994
Threshold voltage shift / Threshold voltage shift / VT VT Threshold voltage shift / Threshold voltage shift / VT VT
After
Before
exposure
After
exposure
AV
T
is a function of
absorbed dose
That function is linear That function is linear
when the MOSFET
operates in the biased
m d d in th mode during the
irradiation
Absorbed dose linearity y
region increases with
the increase of the
bias voltage
bias voltage
Soubra, Cygler, Mackay, Med. Phys. Soubra, Cygler, Mackay, Med. Phys. 21(4) 21(4), 567 , 567- -572, 1994 572, 1994
Types of MOSFETs available Types of MOSFETs available
Single bias, single MOSFET
Temperature dependence Temperature dependence
Instability of response
Dual-bias, dual-MOSFET
P d b S b C l t l i M d Ph (1994) Proposed by Soubra, Cygler et. al. in Med. Phys. (1994)
Two MOSFETs on same silicon chip operating at two different
gate biases
Better sensitivity, reproducibility, and stability than single
MOSFET
Minimal temperature effects
Unbiased single MOSFET
Temperature dependence
Instability of response frequently used as disposable detectors
Instability of response, frequently used as disposable detectors
Shorter linearity range than biased MOSFETs
Dual Dual--MOSFET MOSFET--dual dual--bias detector bias detector Dual Dual MOSFET MOSFET dual dual bias detector bias detector
Courtesy of Ian Thomson
Commercial MOSFET systems Commercial MOSFET systems
il bl th k t il bl th k t available on the market available on the market
BEST Medical (Thomson-Nielsen)
Mobile MOSFET system Mobile MOSFET system
Sicel Technologies Inc. S cel echnolog es Inc.
OneDose system
DVS (Dose Verification System) DVS (Dose Verification System)
Mobile MOSFET system Mobile MOSFET system Mobile MOSFET system Mobile MOSFET system
MOSFET
Reader / bias box
MOSFET array
TN detectors come in two physical sizes:
TN detectors come in two physical sizes:
standard and microMOSFETs, see Table 29-I
Wireless setup Wireless setup Wireless setup Wireless setup
Nominal sensitivities in high Nominal sensitivities in high- -
energy photon beams of various energy photon beams of various
TN detector/bias combinations TN detector/bias combinations TN detector/bias combinations. TN detector/bias combinations.
Nominal sensitivity
TN MOSFET type Bias
Nominal sensitivity
(mV/cGy)
Standard sensitivity Standard 1
Standard sensitivity High 3 Sta dadse st v ty g 3
High sensitivity Standard 3
High sensitivity High 9
OneDose MOSFET system OneDose MOSFET system OneDose MOSFET system OneDose MOSFET system
OneDose MOSFET
buildup cap
OneDosePlus MOSFET
OneDose reader
OneDose MOSFET detectors
Courtesy of Sicel Technologies
DDose ose VVerification erification SSystem ystem Components Components
11-gauge needle
l bl D Implantable Dosimeter
Reader
DVS Reader
Plan and Review Software
DVS
Database
Courtesy of Sicel Technologies
Implantable MOSFET detector (DVS) Implantable MOSFET detector (DVS) p ( ) p ( )
Electronics assembly Electronics assembly
contains 2 MOSFETs and
support circuitry
Bi-directional antenna coil
provides dosimeter power
and communications channel and communications channel
Hermetically sealed in bio-
compatible glass capsule
MOSFETS
compat ble glass capsule
Filled with medical grade
epoxy
p y
CMRP MOSFET Dosimetry System y y
MOSkin detectors,
thickness 0.07 mm, th ckness 0.07 mm,
see Table 29-III
MOSFET Clinical Dosimetry System:
designed and distributed by CMRP
Courtesy of Anatoly Rosenfeld
MOSFET calibration MOSFET calibration MOSFET calibration MOSFET calibration
Purpose to establish calibration coefficient of the p
detector
1
) , (
) (
) (
0 det
0
Q D M
Q D
Q CF =
) (
1
) (
,
Q CF
Q S
w AD
=
Units: mV/cGy
Units: cGy/mV
k V Q CF Q D
H
A ) ( ) (
) , ( ) , (
0 0 det
Q D V Q D M A =
i
i
th
k V Q CF Q D
H
- A - = ) ( ) (
Calibration process Calibration process
Calibration process dosimetric characterization of
d lib i ffi i detectors calibration coefficient
In principle, the users are responsible for the calibration
of new detectors
Some companies, e.g. Sicel sell pre-calibrated detectors.
the user is still responsible for checking the
calibration coefficients, so errors are avoided in
patient dosimetry
Dosimetric characterization of Dosimetric characterization of
MOSFET d t t MOSFET d t t MOSFET detectors MOSFET detectors
MOSFET detectors should be fully characterized
before use
How it is done, depends on the intended use of the
detector
C lib ti i f ll b ild diti s Calibration in full buildup conditions
in phantom, at a standard depth, e.g. d
max
, 5 cm,
etc etc.
in a linac beam, simultaneous measurement of the
detector and ionization chamber signals
g
SSD calibration set SSD calibration set- -up up
SSD
1
= 80 cm (Co-60)
SSD
2
= 100 cm (linac)
Field Size = 10x10 cm
2
SSD
2
= 100 cm (linac)
MOSFET depth = 5.0 cm
Ion chamber Ion chamber
depth = 11.3 cm Backscatter = 12.3 cm
*Diagrams not to scale
Clinical calibration process Clinical calibration process
50-100 MU delivered several times, threshold
voltage recorded before and after each trial g
Simultaneous ion chamber measurement used to
d t min th d s f h t i l
) (Q D
TG-51 PDD curves
determine the dose for each trial
) (
0
Q D
M
raw
Dose @ depth = 11.3 cm
Dose to water at
MOSFET location
TG 51 PDD curves
) , (
) (
0
0
Q D V
Q D
CF
th
A
=
(
mV
cGy
Calibration Process for DVS Calibration Process for DVS
Calibration performed by the
f manufacturer
The response (or radiation
sensitivity) of each dosimeter
is first determined using a
Sicel
60
Co Irradiator
60
Co source
Calibration is performed in a Calibration is performed in a
phantom (in vitro ) at body
temperature (37C)
In Vitro Water Tank Testing
t mp ratur ( 7 )
In-Vitro Water Tank Testing
Courtesy of G. Beyer
Calibration Process for DVS Calibration Process for DVS (cont.) (cont.) Calibration Process for DVS Calibration Process for DVS (cont.) (cont.)
A cumulative dose response
calibration curve is obtained for a
Lot Dose Response - RADFET Radiation Sensitivity
0.5
v
i
t
y

specific lot by irradiating a
statistically significant representative
sample from the lot up to 80Gy
(
0 2
0.25
0.3
0.35
0.4
0.45
R
a
d
i
a
t
i
o
n

S
e
n
s
i
t
i
v
(
m
V
/
c
G
y
)
(maximum dose range of the
dosimeter).
Dose response curve
Verified by UW ADCL (sample lot sent for testing)
0.2
201 1004 2008 3008 4009 5011 6018 7026 8036
Cumul at i ve Dose ( cGy)
Verified by UW-ADCL (sample lot sent for testing)
Calibration is valid for use with daily doses of 150-250 cGy
Reported accuracy for each lot has a calibration certificate with values Reported accuracy for each lot has a calibration certificate with values
within:
<5.5% (2) up to 20 Gy
<6.5% (2) up to 74 Gy (accuracy decreases for doses > 74 Gy).
Correction factors for MOSFETs Correction factors for MOSFETs
Environmental temperature (no pressure
c cti n) correction)
Energy dependence
beam energy m gy
modality (photons, electrons, particles)
Accumulated dose
D Dose rate
Field size
SSD SSD
Directional dependence
Temperature dependence Temperature dependence Temperature dependence Temperature dependence
TN dual-MOSFET-dual-bias detector
temperature independent p p
Other currently available MOSFET detectors Other currently available MOSFET detectors
need corrections to be applied when used at a
temperature different from the one at calibration temperature different from the one at calibration
Temperature dependence Temperature dependence
The DVS is calibrated at 37
o
C
0.46
0.47
23C
The DVS is calibrated at 37
o
C
for use at body temperature.
DVS dosimeter is
0.42
0.43
0.44
0.45
0.46
n
s
i
t
i
v
i
t
y

(
m
V
/
c
G
y
)37C
Linear (23C)
DVS dosimeter is
approximately 3.3% more
sensitive (higher dose
reading for same applied dose)
y =-1.0054E-02x +4.5635E-01
0.38
0.39
0.40
0.41
A
v
e
r
a
g
e

s
e
n
g pp )
when irradiated at 37
o
C vs.
23
o
C
0.37
0 1 2 3 4 5 6 7 8
Irradiation session #
A multiplicative correction factor of 1.033 can be used for room
temperature phantom measurements
MOSFET energy dependence MOSFET energy dependence MOSFET energy dependence MOSFET energy dependence
Edwards et al 1997
Wang et al MC
Wang et al, MC, 2005
Air-kerma sensitivity
Wang et al MC
2005
Kron et al 1998
Kron et al, 1998
Edwards et al, 1975
Air-kerma sensitivity
Kron et al, 1998
Absorbed dose ensitivity
photon energy / keV
Wang et al Radiat. Prot. Dos. 2005
p gy
MOSFET energy dependence MOSFET energy dependence
TN TN 502 RDM 502 RDM TN TN--502 RDM 502 RDM
1.09
)
1.05
1.07
c
G
y
/
m
V
)
1 01
1.03
F
a
c
t
o
r

(
c
0.99
1.01
b
r
a
t
i
o
n

0.95
0.97
C
a
l
i
C0-60 4 MV 6 MV
Beam Energy
Courtesy of T. Woods
Energy dependence Energy dependence -- TN TN- -502 502--RD RD
*
experiment
*
experiment
MC high energy X-rays
MC mono-energetic beams
Panettieri et al Phys Med Biol. 52(1):303-16.2007
Absorbed dose linearity Absorbed dose linearity dual dual
MOSFET MOSFET d l d l bi bi MOSFET MOSFET--dual dual--bias bias
6 MV
Consorti et al, Int. J. rad. Onc. Biol. Phys.
63, 952-60, 2005
Ramaseshan et al, Phys. Med. Biol. 49 , 4031
4048, 2004
Effect of accumulated dose Effect of accumulated dose Effect of accumulated dose Effect of accumulated dose
Ramani et al Int. J. Rad. Onc. Biol. Ramani et al, Int. J. Rad. Onc. Biol.
Phys., 37, 959-64, 1997
Effect of accumulated dose Effect of accumulated dose Eff f m Eff f m
unbiased MOSFET unbiased MOSFET -- DVS DVS
Lot Dose Response - RADFET Radiation Sensitivity
0.4
0.45
0.5
n
s
i
t
i
v
i
t
y

y
)
0.3
0.35
0.4
d
i
a
t
i
o
n

S
e
n
(
m
V
/
c
G
y
0.2
0.25
201 1004 2008 3008 4009 5011 6018 7026 8036
Cumul at i ve Dose ( cGy)
R
a
d
( y)
Directional dependence Directional dependence Directional dependence Directional dependence
Ideally it should be isotropic
In practice, angular response of p , g p
the detector depends on
- its design
It can be different for
different energies
Should be evaluated in-phantom
to derive correction factors
Directional dependence Directional dependence
of microMOSFET of microMOSFET
Rowbottom & Jaffray. Med. Phys. 31, 609-15, 2004
Directional dependence phantom Directional dependence phantom Directional dependence phantom Directional dependence phantom
Example of a spherical
phantom that can be used to p
measure angular dependence
of MOSFET response
Directional dependence
Energy: 100 kVp , FS:10x10 cm
2
,FSD:50 cm, Depth:1.5 cm
1.05
1.10
o
n
s
e Xray Tube
0.90
0.95
1.00
a
t
i
v
e

r
e
s
p
o
Rotating
insert
0.80
0.85
0 30 60 90 120 150 180 210 240 270 300 330
R
e
l
a
3 cm
Polystyrene phantom
Angle / deg
(25 cm x 25 cm x 3 cm )
Isotropic within 2.5% (1SD)
Cygler et al, Radiother. Onc. 80, 296301, 2006
Time dependence Time dependence -- Cyberknife Cyberknife Time dependence Time dependence Cyberknife Cyberknife
Cyberknife: long treatment times Cyberknife: long treatment times
High High--dose DVS dosimeter initial design dose DVS dosimeter initial design - -
significant dependence of response on irradiation significant dependence of response on irradiation g p p g p p
time: 1 time: 1- -h and 2.5 h and 2.5--h multiple irradiations caused h multiple irradiations caused
mean over mean over--responses of 4% and 8%, respectively, responses of 4% and 8%, respectively,
when compared to a single irradiation of when compared to a single irradiation of ~~1.5 min. 1.5 min.
Improved DVS design Improved DVS design -- no time dependence no time dependence p g p g pp
(response within 2 %) (response within 2 %)
MOSFET detectors MOSFET detectors
Advantages Advantages vs vs disadvantages disadvantages Advantages Advantages vs. vs. disadvantages disadvantages
Advantages
Disadvantages
dvantages
Very small active volume
Dual-MOSFET-dual bias
g
Finite lifetime(~100 Gy)
Energy dependence
system eliminates most
correction factors
Instantaneous readouts
Temperature dependence
for single-MOSFET-
detector
Instantaneous readouts
(on-line dosimetry)
Permanent dose storage
Sensitivity change with
accumulated dose for
unbiased MOSFETs
g
(Can be read multiple
times)
Waterproof
unbiased MOSFETs
Waterproof
Efficient in use
Clinical applications Clinical applications
In-phantom measurements
Build-up curves for high energy photon beams
Interface dosimetry
Small field output factors (radiosurgery)
In-vivo dosimetry
External beam: entrance and exit doses, skin dose,
peripheral dose, tumor dose
TBI
IMRT IMRT
IGRT
IORT
IORT
brachytherapy
Build Build--up depth dose curves 6 MV up depth dose curves 6 MV
FS 10 10 FS 10 10
2 2
SSD 100 SSD 100 FS=10x10 cm FS=10x10 cm
2, 2,
SSD=100 cm SSD=100 cm
MOSkin chip
developed at CMRP
allows measurements allows measurements
of the surface dose
at a depth of 0.07mm
Entrance and exit dosimetry Entrance and exit dosimetry Entrance and exit dosimetry Entrance and exit dosimetry
Use of build-up caps is recommended p p
OneDose Plus detectors come equipped with caps
TN MOSFETs one can fit inside special buildup
caps caps
Radiosurgery dosimetry Radiosurgery dosimetry
1
Radiosurgery dosimetry Radiosurgery dosimetry
0.9
1
c
t
o
r
0.8
t
p
u
t

f
a
c
li i l
0.7
o
u
t
clinical
MOSFET
0.6
0 20 40 60 80 100
i /
cone size / mm
Courtesy of J. Wojcicka
IMRT in vivo dosimetry IMRT in vivo dosimetryyy
Marcie et al, Int. J. Rad. Onc. Biol. Phys., 61,
16036, 2005
In some cases BBs placed on top
In some cases, BBs placed on top
of patients mask for original CT
Results from Results from in vivo in vivo measurements measurements
hh Tomotherapy Tomotherapy
Example: Patient E
Cherpak et al Radiother. Oncol. 86, 242-250, 2008
IORT IORT IORT IORT
Pancreas treatment with Novac7 Pancreas treatment with Novac7
Consorti et al, Int. J. rad. Onc. Biol. Phys.
63, 952-60, 2005
Detector calibration for Detector calibration for
brachytherapy brachytherapy TG TG 43 formalism 43 formalism brachytherapy brachytherapy --TG TG--43 formalism 43 formalism
| | ) ( ) ( ) ( / ) ( ) ( u u u u F G G S D A
-

Solid water phantom
| | ) , ( ) ( ) , ( / ) , ( ) , (
0 0
u u u u r F r g r G r G S r D
K
A =
5.5 cm
1.0cm
MOSFET
Solid water phantom
Reference distance 1 cm
A
-
S r D ) ( u
6 cm
125
I (6702) Source
A =
K
S r D ) , ( u
) (cGy Dose
f
Solid Water
) (mV V
f
th
cal
A
=
Energy Dependence:
Sensitivity (
25
I/
60
Co) ~ 3
Sensitivity (
25
I/
60
Co) ~ 3
Cygler et al, Radiother. Onc. 80, 296301, 2006
In Vivo In Vivo Measurements Measurements prostate prostate
7
implants implants
Setscrew Setscrew
seed
1
USprobe
1
2
3
4
US probe
MOSFET MOSFET
MOSFET position MOSFET position
Fluoroscopy image of the
prostate after implant
MOSFET reading taken every 1cm MOSFET reading taken every 1cm
Use of MOSFET detectors during Use of MOSFET detectors during
i l d i l d prostate implant procedure prostate implant procedure
l l t d i iti l l () d t i l t ( )
10
12
/
h
)
150% mPD
calculated initial pre-plan () measured post implant ()
6
8

R
a
t
e

(
c
G
y
/
90%mPD
mPD
2
4
I
n
i
t
i
a
l

D
o
s
e
Prostate length =50 mm
Prostate
Base
Prostate
Apex
90% mPD
0
2
0 10 20 30 40 50 60 70 80 90 100 110
Distance (mm)
g
Cygler et al Radiotherapy and Oncology 80: 296-301; 2006
Distance (mm)
BNCT at BNL medical research BNCT at BNL medical research
tt reactor reactor
0.80
1.00
d
o
s
e
0.20
0.40
0.60
e
l
a
t
i
v
e

b
o
r
o
n

0.00
0.20
0 2 4 6 8 10 12
Depth in phantom (cm)
R
e
Thermal neutron depth dose distribution in a perspex phantom in a
BNCT epithermal neutron beam facility at BNL obtained with
paired MOSFET detectors with
10
B converter Subtracting on line
paired MOSFET detectors with
10
B converter. Subtracting on-line
the response of paired MOSFET eliminate effect of gamma dose.
Conclusions Conclusions Conclusions Conclusions
MOSFET detectors are very useful for dosimetry MOSFET detectors are very useful for dosimetry,
especially
High dose gradient fields
Accurate if properly characterized and used Accurate if properly characterized and used
Phantom (in vitro) dosimetry
In vivo dosimetry in external beam and brachytherapy
treatments
m
Acknowledgements Acknowledgements Acknowledgements Acknowledgements
Anatoly Rosenfeld Anatoly Rosenfeld
Ian Thomson
Nuria Jornet
G. Beyer, Sicel Technologies Inc. y , g
A. Hallil, Best Medical Canada
Amanda Cherpak Amanda Cherpak
Tara Woods
Thank Thank you you
Merci

MOSFET Dosimetry for Radiotherapy

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

MOSFET Dosimetry for Radiotherapy

Uploaded by

Copyright:

Available Formats

MOSFET MOSFET dosimetry in dosimetry in MOSFET MOSFET dosimetry in dosimetry in

You might also like