FJL6920

FJL6920
High Voltage Color Display Horizontal Deflection Output
High Collector-Base Breakdown Voltage : BVCBO = 1700V Low Saturation Voltage : VCE(sat) = 3V (Max.) For Color Monitor

TO-264

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 20 30 200 150 -55 ~ 150 Units V V V A A W C C

* Pulse Test: PW=300s, duty Cycle=2% Pulsed

Electrical Characteristics TC=25C unless otherwise noted

Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCE=5V, IC=1A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20 IB1=2.0A, IB2= - 4.0A 0.15 1700 800 6 8 5.5 8.5 3 1.5 3 0.2 V V s s Min. Typ. Max. 1 10 1 Units mA A mA V V V

* Pulse Test: PW=20s, duty Cycle=1% Pulsed

Thermal Characteristics TC=25C unless otherwise noted

Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 0.625 Units C/W

2001 Fairchild Semiconductor Corporation

Rev. A, May 2001

FJL6920

Typical Characteristics

16

100

IB=4.0A
14

VCE = 5V IB=2.0A IB =1.5A IB =1.0A

Ta = 125 C
o

IC [A], COLLECTOR CURRENT

Ta = 25 C

10

hFE, DC CURRENT GAIN

12

10

Ta = - 25 C

IB=0.5A IB=0.2A

0 0 2 4 6 8 10

1 0.1

10

100

VCE [V], COLLECTOR-EMITTER VOLTAGE

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics

Figure 2. DC Current Gain

10

10

VCE(SAT) [V], SATURATION VOLTAGE

Ta = 125 C
1
o

VCE(SAT) [V], SATURATION VOLTAGE

IC = 3 IB

IC = 5 IB

Ta = 125 C
1
o

Ta = 25 C Ta = - 25 C
o

Ta = 25 C

0.1

0.1

Ta = - 25 C

0.01 0.1

10

100

0.01 0.1

10

100

IC [A], COLLECTOR CURRENT

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector-Emitter Saturation Voltage

16

10

14

VCE = 5V

VCC = 200V, IC = 10A, IB1 = 2A

IC [A], COLLECTOR CURRENT

12

tSTG & tF [s], SWITCHING TIME

tSTG
1

10

0.1

tF

125 C
0 0.0 0.2 0.4

25 C
0.6

- 25 C
0.01 0.8 1.0 1.2 1 10

VBE [V], BASE-EMITTER VOLTAGE

IB2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Resistive Load Switching Time

2001 Fairchild Semiconductor Corporation

Rev. A, May 2001

FJL6920

Typical Characteristics (Continued)

100

VCC = 200V, IC = 10A, IB2 = - 4A

10

VCC = 200V, IB1 = 2A, IB2 = - 4A

tSTG & tF [s], SWITCHING TIME

10

tSTG & tF [s], SWITCHING TIME

tSTG
1

tSTG

tF
0.1

tF
0.1

0.01 1 10 1 10

IB1 [A], FORWARD BASE CURRENT

IC [A], COLLECTOR CURRENT

Figure 7. Resistive Load Switching Time

Figure 8. Resistive Load Switching Time

100

40

IC (Pulse)

t = 100ms

t = 10ms t = 1ms
35

RB2 = 0, IB1 = 15A VCC = 30V, L = 200 H

IC [A], COLLECTOR CURRENT

10

IC (DC)

IC [A], COLLECTOR CURRENT

30

25

20

15

VBE(off) = -6V
10

0.1

TC = 25 C Single Pulse
0.01 1 10 100 1000 10000

V BE(off) = -3V
5 1 10

100

1000

10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Forward Bias Safe Operating Area

Figure 10. Reverse Bias Safe Operating Area

300

250

PC [W], POWER DISSIPATION

200

150

100

50

0 0 25 50
O

75

100

125

150

175

TC [ C], CASE TEMPERATURE

Figure 11. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A, May 2001

FJL6920

Package Demensions

TO-264
6.00 0.20

20.00 0.20
(4.00)

(8.30)

(8.30)

(2.00)

(1.00)

(9.00)

(9.00)

(11.00)

(0.50)
20.00 0.20 2.50 0.10

1.50 0.20

(R1

(7.00)

(7.00)

4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 0.10
+0.25

(2.00)

20.00 0.50

(R 2.0

3.3 0 0
.20

.00

0)

(1.50)

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.60 0.10

+0.25

2.80 0.30

5.00 0.20

3.50 0.20

(0.15)

(1.50)

(2.80)

Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A, May 2001

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FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H2