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What is it?
Agilent Technologies
Eesof Korea
Kim, Kyoung-Won
Today many problems exist with non-linear designs
Examples:
You apply a clean signal to the input of your device but your output (B2) is distorted. Why? How do
you fix it?
You get good performance from a device but when you cascade it with other devices the composite
output does not perform to expectations. Is the design unstable? What is going on?
There is high 2nd harmonic (or third harmonic) content in the output of a design and a matching
circuit is needed to remove that, but the phase of that spectral component needs to be known. S-
parameters are valid only for small signal linear systems. They do not accurately represent nonlinear
behavior. At large drive, the whole non-linear characteristics changes.
November 18, 2010 2
The Solution:
Agilent Technologies Announces Breakthrough in X-Parameter Nonlinear Model Generation for Components Used in
Wireless, Aerospace Defense Industries.
X-Parameters Enable Accurate Non-Linear Model Generation from Simulation or Measurement, for Fast Development
Agilent Restricted
Beyond Large-Signal S-Parameters
Applications of X-Parameters models in ADS
November 18, 2010 3
Now
A new breakthrough approach
Characterize your devices using X-parameters
X-Parameter model is a real rigorous, scientifically
proven, and unprecedented approach that captures all
non-linearties, amplitude, phase at all harmonics and
with mismatches; and uses these data directly in ADS
for design, simulation, and characterization.
Before
Designers Struggle in the design of large
signal non-linear circuits
Traditional non-Linear device models do not
accurately represent actual non-linear device
behavior under all real conditions including large
input signals, mismatches, and higher order
harmonics.
Device model; Max Power;
Linearize; stabilize; etc.
Agilent Restricted
Power amp related customer products flow (food chain)
Power amp chips
Foundry
(Compound)
Cell phones
WiMAX
Power amp module
Base station
Front end modules
(w/PA)
Chip set/
Reference design
Foundry
(Silicon)
GaAs
GaN
CMOS
Semicon
Process
Circuit
Design
System
Design
CMOS
LDMOS
SiGe
Players in semicon & wireless communication
Samsung
Qualcom
m
PA
foundries
system HTC Nokia RIM Haier Samsung Motorola Sony-Ericsson Apple
Silicon (+LDMOS, SiGe) GaAs (+other compound)
TSMC UMC Chartered
WIN UMS Cree
RFMD
Skyworks
module
Infineon
Renesas
Avago
Broadcom
Eudyn
a
Jazz
ST-
Ericsson
MediaTek
Toshiba
TriQuint
Mitsubish
i
Freescale
Fujitsu
RichWave
Anadigics
chip set/
ref design
Murata
EPCO
S
FMD
design
houses
IDM
NEC Elec
Hittite
TaiyoYud
en
ZTE Huawe
i
Fingu
RFHIC
X-Parameters
Bridge Between Our Customers
November 18, 2010 6
Agilent Restricted
ESL
Electronic System Level
Design (ESL)
X-pars
IC Design Houses /
Component Vendor
System Integrators
New Designs
Share IP Protected
X-Parameters file
Existing Parts
X-parameters
measurement
NVNA
X-Parameters
Component for ADS
Bottom-up Sim-based verification
Bottom-up meas-based verification
Top-Down Design Specs
Non-Linear
X-Parameters Ideal
Specs
1. an extension of S-parameters to non-linear devices
2. a data library with non-linear information
3. three dimensional CAD file
4. behavioral model
5. a tool for non-linear simulation
Five effective ways to describe X-parameters
linear: S-parameters
1. X-parameters are the mathematical extension of
S-parameters for non-linear devices
In
Out
S
non-linear: X-parameters
In
In
Out
X
In
In
Out
Out
X
S
In
In
In
Real X-parameters are a little more complex, but you
can survive with this knowledge in 90% of the cases!
This fundamental drive
tone is driving the
device to non-linear
21
21
Reflection is measured the same way with the drive tone always provided
at the input
In
Out
S
In
In
Out
X
In
Drive tone
Out
Out
X
S
In
In
In
In
22
22
This fundamental drive tone is
driving the device to non-linear
linear: S-parameters
non-linear: X-parameters
X-parameters converges to S-parameters when the driving tone
is small
In
Out
In
In
Out
Out
X
In
In
In
a1 0 0
0 a2 0
0 0 a3
There are only diagonal elements in this matrix.
These diagonal elements are equivalent to S-param.
Small enough
2. X-parameter file is like a library
-- everything is in it --
Vg, Vd, Freq,
GammaLoad,
one page
Frequency
Vg
Load impedance
Vd
Power
X-param
one sector
one book
one series
one bookshelf
one library
Measurement takes from tens of minutes
to a few hours depending on the size of the library
3. X-parameter is like a 3-D CAD
-- in a datasheet of an amplifier, linear and non-linear are mixed --
Non-linear parameters
Linear parameters
IMD
Pout vs Pin
P1dB
PAE
S=parameters
Datasheet of an amplifier is like 2-D drawings of a 3-D object
P1dB
S-parameters
IMD
PAE
X-parameter file is like a 3-D CAD file
-- You can get IMD, S-param, P1dB and anything out of this file --
X-param file
3-D file
( ) ( ) ( ) *
11 , 11 , 11
( ) ( ) ( )
F k S k l T k l
ik ik ik jl jl ik jl jl
B X A P X A P a X A P a
4. X-parameter is a behavioral model
[X]
an FET is described by many elements
(>100 elements @HBT)
an FET is described by [X]
[X]
an amplifier is described by [X]
source
Load
Stimulus and
Measurement
DUT
Tuners used to vary the
impedance seen by the Device
Under Test (DUT)
Extract X-parameters model from Simulation
Project View of the demo
Extract X-parameters model from Simulation
Demo # 1- Second stage of two Cascaded MMIC PAs
Extract model with Pin=
-10 dBm to 5 dBm
Gain
27 dB
Pin
0 dBm
Pin
-27 dBm
Pout = 26 dBm
1 dB compressed
Gain
26 dB
Operational power setting for LTE Application
Demo #1
Demo 1: Extract X-par model Set-up
Demo 1: X-par model overlaid on PA Results
Conclusions from the demos
Demo 1 shows the creation of mdf file X-par model with:
Swept Pin, freq, and DC power
Load and source pull not in this demo but will be available in ADS2009 U1
Extract X-parameters model from Simulation
Demo # 2- Compare X-par model, P2D model, and PA
Extract X-par model and P2D model
with Pin= -40 dBm to 10 dBm
Pin
-40 to 10 dBm
Pout = 26 dBm
1 dB compressed
Gain
26 dB
Demo 2: Results
Conclusions from the demos
Demo 1 shows the creation of mdf file X-par model with:
Swept Pin, freq, and DC power
Load and source pull not in this demo but will be available in ADS2009 U1
Demo 2 compares X-par, P2D, and PA with 50 ohm loads:
Only at the fundamental freq and 50 ohm load, the P2D model matches very well with the X-
parameters model and with the PA.
o This confirms our past statement on the accuracy and usefulness of the P2D model.
X-parameters model contains magnitude and phase info on all of the harmonics, where P2D
is good only at the fundamental freq.
Extract X-parameters model from Simulation
Demo # 3- Cascaded PAs and models with mismatch
G
r
e
a
t
S
1
1
G
r
e
a
t
S
1
1
G
r
e
a
t
S
2
2
P
o
o
r
S
2
2
Small signal Large signal
Demo 3: Results
Conclusions from the demos
Demo 3
Unlike P2D model which is good only at 50 ohm impedances, X-par model works at all
source and load impedances (available in ADS2009U1 version)
P2D models will have accuracy problems when cascading modules with source and load
mismatch
Demo # 4: Cascaded PAs and models with Isolator in between to
eliminate mismatch
Demo 4: Results