MI CROWAVE POWER GaAs FET MI CROWAVE POWER GaAs FET MI CROWAVE POWER GaAs FET MI CROWAVE POWER GaAs

FET
MI CROWAVE SEMI CONDUCTOR MI CROWAVE SEMI CONDUCTOR MI CROWAVE SEMI CONDUCTOR MI CROWAVE SEMI CONDUCTOR TI M5964-4UL TI M5964-4UL TI M5964-4UL TI M5964-4UL
TECHNI CAL DATA TECHNI CAL DATA TECHNI CAL DATA TECHNI CAL DATA
FEATURES FEATURES FEATURES FEATURES
HIGH POWER BROAD BAND INTERNALLY MATCHED
P1dB=36.5dBm at 5.9GHz to 6.4GHz
HIGH GAIN HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 5.9GHz to 6.4GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
CHARACTERI STI CS SYMBOL CONDI TI ON UNI T MI N. TYP. MAX.
Output Power at 1dB
Compression Point
P1dB dBm 35.5 36.5
Power Gain at 1dB
Compression Point
G1dB dB 9.0 10.0
Drain Current I DS1 A 1.1 1.3
Gain Flatness G dB 0.6
Power Added Efficiency add
VDS= 10V
f = 5.9 6.4GHz

% 37
3rd Order I ntermodulation
Distortion
I M3 dBc -44 -47
Drain Current I DS2
Two Tone Test
Po= 25.5dBm
(Single Carrier Level) A 1.1 1.3
Channel Temperature Rise Tch VDS X I DS X Rth(c-c) C 80
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
CHARACTERI STI CS SYMBOL CONDI TI ON UNI T MI N. TYP. MAX.
Transconductance gm VDS= 3V
I DS=1.5A
mS 900
Pinch-off Voltage VGSoff VDS= 3V
I DS=15mA
V -1.0 -2.5 -4.0
Saturated Drain Current I DSS VDS= 3V
VGS=0V
A 2.6 3.5
Gate-Source Breakdown
Voltage
VGSO I GS=-50A V -5
Thermal Resistance Rth(c-c) Channel to Case C/W 4.5 6.0
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHI BA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHI BA or others.
The information contained herein is subject to change without prior notice. I t is therefor advisable to contact TOSHI BA
before proceeding with design of equipment incorporating this product.
Apr. 2000
2
TI M5964-4UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )
CHARACTERI STI CS SYMBOL UNI T RATI NG
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current I DS A 3.5
Total Power Dissipation (Tc=25 C ) PT W 23
Channel Temperature Tch C 175
Storage Tstg C -65 +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
Gate
Source
Drain
HANDLI NG PRECAUTI ONS FOR PACKAGED TYPE HANDLI NG PRECAUTI ONS FOR PACKAGED TYPE HANDLI NG PRECAUTI ONS FOR PACKAGED TYPE HANDLI NG PRECAUTI ONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at
260 C.
3
.
2

0
.
3
0
.
1
+
0
.
1
-
0
.
0
5
0
.
2

M
A
X
.
1
.
6

0
.
3
2
.
6

0
.
3
5
.
0

M
A
X
.
4
.
0

M
I
N
.
4
.
0

M
I
N
.
1
2
.
9

0
.
2
4-C1.2
0.6 0.15
17 0.3
11.0 MAX.



21 0.2
12

3
TI M5964-4UL
RF PERFORMANCES
34 34 34 34
35 35 35 35
36 36 36 36
37 37 37 37
38 38 38 38
39 39 39 39
5.7 5.7 5.7 5.7 5.8 5.8 5.8 5.8 5.9 5.9 5.9 5.9 6 66 6 6.1 6.1 6.1 6.1 6.2 6.2 6.2 6.2 6.3 6.3 6.3 6.3 6.4 6.4 6.4 6.4 6.5 6.5 6.5 6.5 6.6 6.6 6.6 6.6
P
o

(
d
B
m
)
P
o

(
d
B
m
)
P
o

(
d
B
m
)
P
o

(
d
B
m
)
Frequency (GHz)
Output Power vs. Frequency
VDS= 10V
IDS 1.1A
Pin= 26.5dBm
add add add add
31 31 31 31
32 32 32 32
33 33 33 33
34 34 34 34
35 35 35 35
36 36 36 36
37 37 37 37
38 38 38 38
39 39 39 39
40 40 40 40
21 21 21 21 23 23 23 23 25 25 25 25 27 27 27 27 29 29 29 29 31 31 31 31
Pin ( dBm) Pin ( dBm) Pin ( dBm) Pin ( dBm)
P
o

(
d
B
m
)
P
o

(
d
B
m
)
P
o

(
d
B
m
)
P
o

(
d
B
m
)
0 00 0
10 10 10 10
20 20 20 20
30 30 30 30
40 40 40 40
50 50 50 50
60 60 60 60
70 70 70 70
80 80 80 80
90 90 90 90

a
d
d

(
%
)

a
d
d

(
%
)

a
d
d

(
%
)

a
d
d

(
%
)
Po Po Po Po
Output Power vs. Input Power
f= 6.15GHz
VDS= 10V
IDS 1.1A
4
TI M5964-4UL
0 00 0
10 10 10 10
20 20 20 20
30 30 30 30
0 00 0 40 40 40 40 80 80 80 80 120 120 120 120 160 160 160 160 200 200 200 200
Tc ( ) Tc ( ) Tc ( ) Tc ( )
PPP P
TTT T

(
W
)

(
W
)

(
W
)

(
W
)
POWER DISSIPATION vs. CASE TEMPERATURE
-60 -60 -60 -60
-50 -50 -50 -50
-40 -40 -40 -40
-30 -30 -30 -30
-20 -20 -20 -20
21 21 21 21 23 23 23 23 25 25 25 25 27 27 27 27 29 29 29 29 31 31 31 31
I
M
I
M
I
M
I
M
333 3

(
d
B
c
)

(
d
B
c
)

(
d
B
c
)

(
d
B
c
)
VDS= 10V
IDS 1.1A
f= 6.15GHz
f= 5MHz
IM3 vs. OUTPUT POWER CHARACTERISTICS
Po(dBm), Single Carrier Level