DATA SHEET

Product specication
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30
DISCRETE SEMICONDUCTORS
BF245A; BF245B; BF245C
N-channel silicon field-effect
transistors
1996 Jul 30 2
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
FEATURES
Interchangeability of drain and source connections
Frequencies up to 700 MHz.
APPLICATIONS
LF, HF and DC amplifiers.
DESCRIPTION
General purpose N-channel symmetrical junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN SYMBOL DESCRIPTION
1 d drain
2 s source
3 g gate
Fig.1 Simplified outline (TO-92 variant)
and symbol.
handbook, halfpage
1
3
2
MAM257
s
d
g
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
drain-source voltage 30 V
V
GSoff
gate-source cut-off voltage I
D
= 10 nA; V
DS
= 15 V 0.25 8 V
V
GSO
gate-source voltage open drain 30 V
I
DSS
drain current V
DS
= 15 V; V
GS
= 0
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
P
tot
total power dissipation T
amb
= 75 C 300 mW
y
fs
forward transfer admittance V
DS
= 15 V; V
GS
= 0;
f = 1 kHz; T
amb
= 25 C
3 6.5 mS
C
rs
reverse transfer capacitance V
DS
= 20 V; V
GS
= 1 V;
f = 1 MHz; T
amb
= 25 C
1.1 pF
1996 Jul 30 3
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
j
= 25 C; unless otherwise specified.
Note
1. Measured under pulse conditions: t
p
= 300 s; 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage 30 V
V
GDO
gate-drain voltage open source 30 V
V
GSO
gate-source voltage open drain 30 V
I
D
drain current 25 mA
I
G
gate current 10 mA
P
tot
total power dissipation up to T
amb
= 75 C; 300 mW
up to T
amb
= 90 C; note 1 300 mW
T
stg
storage temperature 65 +150 C
T
j
operating junction temperature 150 C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)GSS
gate-source breakdown voltage I
G
= 1 A; V
DS
= 0 30 V
V
GSoff
gate-source cut-off voltage I
D
= 10 nA; V
DS
= 15 V 0.25 8.0 V
V
GS
gate-source voltage I
D
= 200 A; V
DS
= 15 V
BF245A 0.4 2.2 V
BF245B 1.6 3.8 V
BF245C 3.2 7.5 V
I
DSS
drain current V
DS
= 15 V; V
GS
= 0; note 1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
I
GSS
gate cut-off current V
GS
= 20 V; V
DS
= 0 5 nA
V
GS
= 20 V; V
DS
= 0; T
j
= 125 C 0.5 A
1996 Jul 30 4
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
C
is
input capacitance V
DS
= 20 V; V
GS
= 1 V; f = 1 MHz 4 pF
C
rs
reverse transfer capacitance V
DS
= 20 V; V
GS
= 1 V; f = 1 MHz 1.1 pF
C
os
output capacitance V
DS
= 20 V; V
GS
= 1 V; f = 1 MHz 1.6 pF
g
is
input conductance V
DS
= 15 V; V
GS
= 0; f = 200 MHz 250 S
g
os
output conductance V
DS
= 15 V; V
GS
= 0; f = 200 MHz 40 S
y
fs
forward transfer admittance V
DS
= 15 V; V
GS
= 0; f = 1 kHz 3 6.5 mS
V
DS
= 15 V; V
GS
= 0; f = 200 MHz 6 mS
y
rs
reverse transfer admittance V
DS
= 15 V; V
GS
= 0; f = 200 MHz 1.4 mS
y
os
output admittance V
DS
= 15 V; V
GS
= 0; f = 1 kHz 25 S
f
gfs
cut-off frequency V
DS
= 15 V; V
GS
= 0; g
fs
= 0.7 of its
value at 1 kHz
700 MHz
F noise gure V
DS
= 15 V; V
GS
= 0; f = 100 MHz;
R
G
= 1 k (common source);
input tuned to minimum noise
1.5 dB
handbook, halfpage
10
10
3
10
2
10
1
1
150 50 0
MGE785
100
typ
T
j
(C)
I
GSS

(nA)
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
V
DS
= 0; V
GS
= 20 V.
Fig.3 Transfer characteristics for BF245A;
typical values.
handbook, halfpage
V
GS
(V)
I
D
(mA)
6
0
4 0 2
MGE789
5
4
3
2
1
V
DS
= 15 V; T
j
= 25 C.
1996 Jul 30 5
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
V
DS
(V)
I
D
(mA)
6
0
0 20 10
MBH555
5
4
3
2
1
V
GS
= 0 V
0.5 V
1 V

1.5 V
Fig.4 Output characteristics for BF245A;
typical values.
V
DS
= 15 V; T
j
= 25 C.
Fig.5 Transfer characteristics for BF245B;
typical values.
V
DS
= 15 V; T
j
= 25 C.
handbook, halfpage
V
GS
(V)
I
D
(mA)
15
0
4 0 2
MGE787
10
5
handbook, halfpage
V
DS
(V)
I
D
(mA)
15
0
0 20 10
MBH553
10
5
V
GS
= 0 V
0.5 V
1 V

1.5 V
2 V
2.5 V
Fig.6 Output characteristics for BF245B;
typical values.
V
DS
= 15 V; T
j
= 25 C.
Fig.7 Transfer characteristics for BF245C;
typical values.
handbook, halfpage
V
GS
(V)
I
D
(mA)
30
0
10 0 5
MGE788
20
10
V
DS
= 15 V; T
j
= 25 C.
1996 Jul 30 6
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
handbook, halfpage
V
DS
(V)
I
D
(mA)
30
0
0 20 10
MBH554
20
10
V
GS
= 0 V
1 V

2 V
3 V
4 V
Fig.8 Output characteristics for BF245C;
typical values.
V
DS
= 15 V; T
j
= 25 C.
Fig.9 Drain current as a function of junction
temperature; typical values for BF245A.
V
DS
= 15 V.
handbook, halfpage
0
0 50 150
T
j
(C)
4
I
D
(mA)
3
1
2
MGE775
100
0.5 V
V
GS
= 0 V
1.5 V
1 V
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
handbook, halfpage
0
0 50 150
15
5
10
MGE776
100
T
j
(C)
I
D

(mA)
V
GS
= 0 V
2 V
1 V
V
DS
= 15 V.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
V
DS
= 15 V.
handbook, halfpage
0 50 150
20
0
MGE779
100
4
8
12
16
T
j
(C)
I
D

(mA)
V
GS
= 0 V
4 V
2 V
1996 Jul 30 7
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
Fig.12 Input admittance; typical values.
handbook, halfpage
MGE778
10
3
10
2
10
1
10
2
10
1
10
1
10 10
2
10
3
g
is

(A/V)
b
is

(mA/V)
f (MHz)
b
is

g
is

V
DS
= 15 V; V
GS
= 0; T
amb
= 25 C.
Fig.13 Common source reverse admittance as a
function of frequency; typical values.
handbook, halfpage
MGE780
10
4
10
3
10
2
10
10
1
10
1
10
2
10 10
2
10
3
b
rs

(A/V)
C
rs

(pF)
f (MHz)
b
rs

C
rs

V
DS
= 15 V; V
GS
= 0; T
amb
= 25 C.
Fig.14 Common-source forward transfer admittance
as a function of frequency; typical values.
V
DS
= 15 V; V
GS
= 0; T
amb
= 25 C.
handbook, halfpage
10
0
MGE782
10 10
2
10
3
2
4
6
8
g
fs
,
b
fs
(mA/V)
f (MHz)
b
fs

g
fs

Fig.15 Common-source output admittance as a

function of frequency; typical values.
V
DS
= 15 V; V
GS
= 0; T
amb
= 25 C.
handbook, halfpage
MGE783
10
3
10
2
10
1
10
1
10
1
10
2
10 10
2
10
3
g
os

(A/V)
b
os

(mA/V)
f (MHz)
b
os

g
os

1996 Jul 30 8
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
Fig.16 Input capacitance as a function of
gate-source voltage; typical values.
V
DS
= 20 V; f = 1 MHz; T
amb
= 25 C.
handbook, halfpage
0
6
4
2
0
2 10
MGE777
4 6 8
V
GS
(V)
C
is

(pF)
typ
Fig.17 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
V
DS
= 20 V; f = 1 MHz; T
amb
= 25 C.
handbook, halfpage
0 10
1.5
0.5
MGE781
1
C
rs
(pF)
2 4 6 8
V
GS
(V)
typ

Fig.18 Forward transfer admittance as a function of

drain current; typical values.
handbook, halfpage
8
6
0
MGE791
4
2
|y
fs
|
(mA/V)
I
D
(mA)
0 20 10 15 5
BF245A
BF245B
BF245C
V
DS
= 15 V; f = 1 kHz; T
amb
= 25 C.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
V
DS
= 15 V; T
j
= 25 C.
handbook, halfpage
0 10 30
10
0
MGE784
20
2
4
6
8
BF245A

I
DSS
at V
GS
= 0 (mA)
V
GSoff
at I
D
= 10 nA
(V)
BF245B

BF245C

1996 Jul 30 9
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
V
DS
= 0; f = 1 kHz; T
amb
= 25 C.
handbook, halfpage
10
3
10
1
1
10
10
2
4 2 1 0
MGE790
3
R
DSon
(k)
BF245A
BF245B
BF245C
V
GS
(V)
Fig.21 Noise figure as a function of frequency;
typical values.
V
DS
= 15 V; V
GS
= 0; R
G
= 1 k; T
amb
= 25 C.
Input tuned to minimum noise.
handbook, halfpage
0
3
MGE786
1 10
typ
10
2
10
3
1
2
F
(dB)
f (MHz)
1996 Jul 30 10
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
PACKAGE OUTLINE
Fig.22 TO-92 variant.
handbook, full pagewidth
MBC015 - 1
2.54
4.8
max
4.2 max
0.66
0.56
1
2
3
5.2 max 12.7 min
2.5 max
(1)
0.48
0.40
0.40
min
1.7
1.4
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
1996 Jul 30 11
Philips Semiconductors Product specication
N-channel silicon eld-effect transistors BF245A; BF245B; BF245C
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specication This data sheet contains target or goal specications for product development.
Preliminary specication This data sheet contains preliminary data; supplementary data may be published later.
Product specication This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
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