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Lab 7 Revised: October 17, 2013

EE 2274
MOSFET BASICS

Pre Lab:

1. Simulate in PSpice a family of output characteristic curves for the IRF150 MOSFET.

a. Use a DC Sweep (Primary sweep) from 0 to 12 volts in 200mv increments to change the
drain-source voltage (VDS) of the MOSFET.
b. Use the Parametric sweep from 0 to 5 volts to change the gate to source voltage (VGS) in
500mv increments.
c. Run the simulation and then click on All and OK to display each curve.
d. Change the Y-axis to (0A to 1A) by clicking on Plot Axis Settings Y axis User
Defined.
e. Find the voltage (VGS) per step from your curves and the threshold voltage (VTN ) for the
IRF150 by looking at the difference between two curves. Pick two curves and (Click right
information) on each.

Figure 1
1.e data: VGS/step _______________

VTN ___________________

ID = _____________ at VTN

VTN can be found by subtracting VDS of any curve from VGS at the point where the current ID begins to
flatten out.

VTN = VGS VDS f lat

2. Build a four resistor bias circuit (figure 2) for a NMOSFET. Design the circuit such that Vdd =
12Vdc,Vg=5V, Vds=5V, Id=10ma, IRg2=1ma, assume Vgs=3V. Set the value of ID by setting the
value of RS. Set the Value of VDS by setting the value of RD where VDS = VDD VS VRD . Where
VRD = ID(RD). Include the design values and the standard 10% resistor values. Simulate in Pspice
and include schematic with currents and voltages, two simulation design and standard.
Show your work.
I
Vgs
5Vdc
0
M1
IRF150
Vds
12Vdc
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Lab 7 Revised: October 17, 2013

Rg1
Rs

Rd

Rg2

0
M2
IRF150
Vdd
12Vdc

Figure 2

Design value Standard 10% value Design value Standard 10% value
Rg1 Rd
Rg2 Rs


Design values Calculated with standard values
Vdd supply voltage
VRg1 voltage across Rg1
VRg2 voltage across Rg2
VRs voltage across Rs
VRd voltage across Rd
Vgs gate to source voltage
Vds drain to source voltage

Is Source current

IRg1 Current in Rg1

Id drain current



















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Lab 7 Revised: October 17, 2013
3. Simulate in PSpice the NMOSFET Inverter shown below (figure 3). Instead of varying the drain-
source voltage, vary the gate voltage. Use the DC sweep to vary the gate voltage VGS from 0 to 5
volts and plot this versus ID, and VDS with supply voltage Vdd=5 volt . Turn your graph in. What
is the VTN voltage for the IRF150? How does this compare with 1e?

Figure 3 Inverter
VTN = _____________
ID = _____________ at VTN

Required graphs:
1. I-V Characteristic curve of IRF150 from Pspice.
2. PSPICE transient simulation of 4 resister bias circuit with voltage and current displayed on schematic
3. DC sweep of NMOS Inverter Current
4. DC Sweep of NMOS Inverter Voltage































Vdd 5Vdc
Rd
1k
M4
IRF150
0
I
V
Vgs
0Vdc
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Lab 7 Revised: October 17, 2013
LAB Procedure
MOSFET BASICS


Part I. Characteristic Curve

1. Perform the characteristics I-V curves for the 2N7000 MOSFET using the Tektronix curve tracer.
Find the threshold voltage VTN (VGS where the MOSFET begins to conduct ID) .Print curve.

Part II. Construct Circuit

1. Build the four resistor bias circuit that you designed in the Pre-Lab. Measure all of the currents
going into the FET. Also measure all of the node voltages. Verify that your design works.

Part III. Inverter Circuit

1. Build the NMOSFET Inverter circuit figure 4 that you used in the pre-lab to observe the switching
behavior of the FET set Vdd = 12Vdc.

(a,b) Use DC Sweep to step VGS from 0V to 5V with 100mv steps. (Use oscilloscope to verify the VGS
sweep). Record the Id use a multimeter to measure the voltage across a known resister (Rd) and
calculate the drain current ( Id ) place a step inside the loop as the last step. Add Step - Processing
Analog signals - Formula to calculate and produce a plot of the drain current, for a sweep plot calculate a
scale factor (amps/volt) by hand for the voltage plot. Write this factor on the plot and turn in.
a. Plot VGS verses ID. What is the VTN for the 2N7000? (VGS where the MOSFET begins to
conduct ID )
b. Plot VGS verses VDS. What is VDS at turn-on (VGS =5.0V) and turn-off (VGS = 0.0V)?

(c,d) Use a 1 kHz square wave 5vpp, with 2.5 Vdc offset for VGS, (this will give you a 0-5 volt square
wave). Use oscilloscope to monitor input VGS Ch1 and output VDS Ch2.

c. What is the drain-source voltage (VDS at turn-on and turn-off)?
d. What is the rise time and fall time of the MOSFETS drain-source voltage?


M3
IRF150
V
Rd
1k
V
Vgs







Vdd 12Vdc
0

Figure 4 NMOSFET inverter









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Lab 7 Revised: October 17, 2013



DATA SHEET
EXPERIMENT
MOSFET BASIC

Part I.

1. Turn in graph.
VTN = __________________

Part II.
Rg1 measured Rd measured
Rg2 measured Rs measured



Design values from prelab measured
Vdd supply voltage
VRg1 voltage across Rg1
VRg2 voltage across Rg2
VRs voltage across Rs
VRd voltage across Rd
Vgs gate to source voltage
Vds drain to source voltage

Is Source current

IRg1 Current in Rg1

Id drain current




Part III.
Scale factor for the DC Sweep plot = ________________ Include plot.

Must include units.
VTN (measured) VTN (data sheet)
Vds (off) Vds (on)
Tr (rise time) Tf (fall Time)
Ids (on) Ids (off)



Required plots:
1. I-V Characteristic of MOSFET
2. Plot of VGS verses ID
2. Output rise time of MOSFET
3. Output fall time of MOSFET