Professional Documents
Culture Documents
Semiconductor Physics,
Electronic Devices and Circuits
(BCA Part-I)
Ashish Sharma
M.Sc. (Physics)
Anupama Upadhyay
Revised By: Mr Vijay
M.Sc. (Physics)
Lecturer
Deptt. of Information Technology
Biyani Girls College, Jaipur
Published by :
Think Tanks
Biyani Group of Colleges
ISBN: 978-93-81254-35-9
Edition : 2011
Price :
While every effort is taken to avoid errors or omissions in this Publication, any
mistake or omission that may have crept in is not intentional. It may be taken note of
that neither the publisher nor the author will be responsible for any damage or loss of
any kind arising to anyone in any manner on account of such errors and omissions.
Preface
am glad to present this book, especially designed to serve the needs of the
students. The book has been written keeping in mind the general weakness in
understanding the fundamental concepts of the topics. The book is self-explanatory and
adopts the Teach Yourself style. It is based on question-answer pattern. The language
of book is quite easy and understandable based on scientific approach.
Any further improvement in the contents of the book by making corrections,
omission and inclusion is keen to be achieved based on suggestions from the readers
for which the author shall be obliged.
I acknowledge special thanks to Mr. Rajeev Biyani, Chairman & Dr. Sanjay Biyani,
Director (Acad.) Biyani Group of Colleges, who are the backbones and main concept
provider and also have been constant source of motivation throughout this Endeavour.
They played an active role in coordinating the various stages of this Endeavour and
spearheaded the publishing work.
I look forward to receiving valuable suggestions from professors of various
educational institutions, other faculty members and students for improvement of the
quality of the book. The reader may feel free to send in their comments and suggestions
to the under mentioned address.
Author
Syllabus
B.C.A. Part-I
SEMICONDUCTOR PHYSICS,
ELECTRONIC DEVICES AND CIRCUITS
[This course is of introductory nature as such rigorous mathematical analysis should be avoided
and emphasis should be on concepts and contents of mathematical expressions]
1.
2.
3.
4.
5.
6.
7.
Structure of Matter (Molecule, Atom), Atomic Structure (Energy Levels and Electronic
Configuration), Intermolecular Forces, Phases of Matter, Types of Solids, Crystal
Structure of Solids, Atomic Bonding (Ionic Covalent and Metallic Bondings), Energy
Band Theory of Crystals, Energy Band Structure of Insulators, Semiconductors and
Metals.
Mobility and Conductivity, Electrons and Holes in Intrinsic, Semiconductor Elementary
Properties of Germanium and Silicon, Donor and Acceptor impurities, Extrinsic
Semiconductors, Generation and Recombination of Charges, Diffusion.
Energy Band Structure of Open Circuit P-N Junction, Depletion Region, P-N Junctions as
a Rectifier, Current Components of a P-N Diode, Ideal Voltage, Ampere Characteristics,
Temperature Dependence of the V-I Characteristics, Diode Resistance Varactor Diodes,
Junction Diode Switching Times, Breakdown Diodes, Tunnel Diode, Semiconductor
Photodiode, Photovoltaic Effect, Light Emitting Diodes.
Half-wave and Full-wave Rectifiers, Ripple Factor, Efficiency, Voltage Regulation,
Inductor Filters, Capacitor Filters, L and Section Filters, Regulated Power Supplies,
Information about SMPS Supply.
Bipolar Junction Transistors, Bipolar Transistor Action, Basic Principle of Operation
Open Circuited Transistor, Transistor Biased in Active Region, Current Components in a
Transistor, Characteristic Curves in Common Emitter, Common Base and Common
Collector Configurations, Expression for , and , Hybrid Parameters of a Transistor.
Transistor as an Amplifier, Frequency Response of an Amplifier, RC Coupled Amplifier,
Feedback Concepts and Oscillator.
Elementary Information about Field Effect Transistors, Thyristors, Optoelectronic
Devices and Display Devices.
Content
S. No.
1.
2.
3.
4.
Name of Topic
Structure of Solid
1.1
Types of Solids
1.2
1.3
Atomic Bonding
1.4
2.2
2.3
Extrinsic Semiconductors
2.4
Diffusion
Semiconductor Diodes
3.1
3.2
3.3
Types of Diodes
4.2
Filters
4.3
SMPS Supply
S. No.
5.
6.
7.
8.
Name of Topic
Bipolar Junction Transistor
5.1
Basic Principle
5.2
5.3
Transistor as an Amplifier
6.2
RC Coupled Amplifier
6.3
7.2
Thyristors
7.3
Chapter-1
Structure of Solid
Q.1
Ans.: The Net force of attraction between atoms is called Interatomic Force whereas
the net force of attraction between molecules is called Intermolecular Force.
Interatomic Forces are mainly of four types :
(i) Ionic Bond
(ii)
(iii)
Hydrogen Bond
Q.2
(i)
(ii)
(iii)
Ans.: Lattice : The Lattice is defined as an array of points in space such that the
environment about each point is same with the environment about any other
point.
Linear Lattice : It is are array of infinite points is one dimension.
Two Dimensional Lattice : It is a repetition of linear lattice in another direction
by a regular interval of distance.
Space Lattice or Three Dimensional Lattice : If the points of two dimensional
lattice are repeated in another non-coplanar direction by a regular interval of
distance, then they form three dimensional lattice called Space Lattice.
Fundamental Types of Lattice :
Q.3
(i)
Cubic
(ii)
Tetragonal
(iii)
Orthorhombic
(iv)
Rhombohedral
(v)
Hexagonal
(vi)
Monoclinic
(vii)
Triclinic
What do you mean by Crystalline and Amorphous Solids? Point out some
important differences between them.
Ans.: The solids which have regular and periodic arrangement of atoms or molecules
in a definite and long range order are called Crystalline Solids.
Amorphous or Glassy Solids : Solids which do not have any permanent shape
or do not have any regular and periodic arrangement of atoms or molecules are
said to be Amorphous Solids.
S.No.
Amorphous Solids
These are isotropic in nature.
Crystalline Solids
These are anisotropic.
Q.4
What are Conduction Band, Valance Band and Forbidden Gap. Explain these
bands by proper diagrams.
Ans.: Valance Band : The energy band in which the valance electrons are situated is
called Valance Band.
Conduction Band : The allowed energy band above the Valance Band (i.e.
having higher energy state) which is almost empty in the unexcited state is called
Conduction Band.
Forbidden Energy Gap : In between the Conduction and Valance Bands there is
an energy gap in which no allowed energy level is situated. This energy gap is
called Forbidden Energy Gap.
10
11
12
(a)
(b)
(c)
(d)
2.
3.
( )
( )
The maximum number of electrons possible in the shell of principal quantum number
n1 is
(a)
(c)
4.
be destroyes
be created
either be destroyed ar created
neither be destroyed nor created
n2
2n
(b)
(d)
2n 2
n(n+1)
( )
(b)
(d)
Covalent bond
Metallic bond
( )
( )
Covalent
Metallic
( )
ion-electron
repulsive
( )
Velocity
Potential
( )
(b)
(d)
(b)
(d)
(c)
(d)
10
11
12
13
14
16
( )
(b)
(d)
Free electron
Ions
( )
(b)
(d)
completely empty
Nothing can be said
( )
( )
( )
(a)
(c)
15.
13
Solids
Gases
(b)
(d)
Liquids
Both in liquids and solids
( )
( )
( )
Liquids
Both in liquids and solids
17
Each energy band of a small piece of solid containing 100 atoms will have closely
spaced energy levels equal to:
(a)
50
(b)
100
(c)
200
(d)
500
( )
18
14
(a)
(c)
19
20.
21.
22
23
24
25.
26
27.
Ar
Ge
(b)
(d)
NaCL
Na
( )
( )
(b)
(d)
1 3 A
0
( )
(b)
(d)
ionic
None of the above
( )
(b)
(d)
Cu
Si
( )
is:
( )
14
28
( )
decreases
becomes zero
(b)
(d)
Ionic
neutral
( )
(b)
(d)
1.5 2.5 eV
3.5 4.5 eV
( )
28.
29
In intrinsic semiconductors:
(a)
nh < ne
(c)
nh = ne
(b)
(d)
nh > ne
nh = ne = 0
(b)
Ohm
(d)
Ampere
(c)
S.No.
Ans
S.No.
Ans
S.No.
Ans
15
Farad
Q:01
D
Q:10
B
Q:19
D
02
B
11
C
20
B
03
B
12
A
21
A
04
A
13
A
22
D
05
D
14
C
23
B
06
B
15
B
24
A
( )
07
A
16
C
25
C
08
C
17
B
26
A
09
C
18
B
27
B
16
Chapter-2
Write down the relation between Drift Velocity and Current Density.
Ans.: Current Density : The electric current passing normally through a units area of
the metal wire is called Current Density (J).
I
J
A
As shown in figure, let a potential
difference V is applied between the
ends of the wire of length L and
cross section area A.
If number of free electrons per unit volume in wire are n then total number of
electrons passing through unit area of the wire in time t seconds will be (nAV dt)
and flow of charge will be Q qnAVd t
Where q Charge of an electron
qnAVd t
t
Q
t
qnAVd
Current Density J
J
Q.2
I
A
qnVd
17
Ans.: Intrinsic Semiconductor : When a semi conducting material is pure and in its
natural from it is called Intrinsic Semiconductor. The examples of Intrinsic
Semiconductors are Germanium (Ge)
and
Silicon (Si).
Crystal Structure : Both Silicon and
Germanium has four valance
electrons. For stability every atom
shares one electron from the
neighboring four atoms to complete
the
valance orbit. Thus the valance
electrons of each atom form covalent
band
with one electron of each of its four neighbors. The crystal structure of both
Silicon and Germanium is diamond structure in which the bands form a
tetrahedron.
Charge Carriers : At absolute zero temperature, all semiconductor behaves as
insulator and no charge carrier exist. As the temperature increases, some electron
from valance band, reach the conduction band after crossing the forbidden
energy gap. Due to this a vacant site is created is valance band is called a Hole.
Thus free electrons and holes are created in pairs simultaneously. Therefore in
intrinsic semiconductors both electrons and holes are the charge carriers.
Q.3
N-Type Semiconductor
(ii)
P-Type Semiconductor
18
of
while
every
carrier
19
In P-Type Semiconductor, acceptor level lies slightly above the valance band of
semiconductor. Holes are the majority charge carries in P-Type Semiconductor.
Q.4
Ans.: In Intrinsic Semiconductors, both electrons and holes are the energy charge
carries.
When a battery is connected between the two ends of a semi-conducting
material, both electrons and holes move
in
definite direction.
The drift velocity of both electrons and
is proportional to intensity of applied
electric field. i.e.
And
Vn E
Vn
Vp E
Vp
Here
&
holes,
E
E
Jp = nqVp = ppqE
J = Jn + Jp
OR
J = qE (nn + pp ) amp/m2
20
J
E
Q.5
q (nn + pp ) mho/m.
Ans.: We have derived the expression for current density in a semiconductor in last
question and got
J = q (nn + pp ) E
And therefore conductivity
J
q (nn + pp ) mho/m
E
For N-Type Semiconductors
n = ND
Where ND is the number density of donor impurities
Further, n >> p
Therefore,
= q NDn
Ans.: In
a
P-N
Junction,
P-type
semiconductor material is joined to Ntype material in atomic sense. The Pmaterial has a large hole density
while the N- material has a large free
electron density. In this way at the
21
junction a gradient of density of charge carriers developed. Due to this, the holes
diffuse from P-side to N-side while electrons diffuse from N-side to P-side.
This process of diffusion affects only a narrow region near the junction between
X1 and X2.
Due to the diffusion of electrons from N to P-side and holes from P to N-side, in
a thin layer at the junction the holes capture the electrons and the charge carriers
no longer remain free. This region of the junction thus depleted of free charge a
carriers and the larger so formed is called Depletion Layer.
7.
( )
( )
(b)
(d)
Forbidden band
Conduction band
( )
(b)
(d)
( )
( )
22
(b)
(c)
(d)
8
10
11
12
13
14
( )
(b)
(c)
(d)
(b)
(d)
( )
( )
A rectifier
A modulator
( )
(b)
(c)
(d)
( )
( )
23
15
The energy needed to detach the fifth valence electron from the Antimony (Sb)
impurity atom surrounded by Ge atoms is approximately:
(a)
0.001 eV
(b)
0.01 eV
(c)
0.1 eV
(d)
1.0 eV
( )
16
17.
18
19
20
21
S.NO.
Ans
S.NO.
Ans
S.NO.
Ans
Infinite
None of the above
( )
C/m3
Ampere/m3
( )
(b)
(d)
( )
Q:01
A
10
B
Q:19
C
02
B
11
C
20
A
03
D
12
B
21
B
04
B
13
B
05
A
14
C
( )
(b)
(d)
Ca
Ag
( )
(b)
(d)
0.6 mV
0.6 V
( )
06
B
15
B
07
B
16
C
08
C
17
B
09
C
18
C
24
Chapter-3
Semiconductor Diodes
Q.1
Ans.: P-N Junction : When a P-type semi conducting material is joined to a N-type
material is the atomic sense, the device is called P-N junction. During the
formation of a P-N Junction a potential barrier is developed at the junction. This
potential barrier abstracts the flow of free charge carriers (electrons & holes). PN
junction has a special feature that it allows the flow of current easily in one
direction but obstruct the flow of current in opposite direction. Thus P-N
Junction acts as a rectifier diode therefore this device is called P-N junction
Diode.
Q.2
Explain the working of P-N Junction Diode. Discuss its Forward and Reverse
Bias.
Ans.: Working of P-N Junction Diode : P-N Junction diode has a very special feature
that it allows the flow of current only in our direction and obstruct the flow of
current ins other direction so this device is used in rectifies circuits.
Forward Biasing of a P-N Junction Diode :
P-N junction, If P-terminal is joined to
positive terminal of battery and N-terminal
negative terminal then the diode is said to
Forward Biased.
to
be
25
26
Q.3
Ans.:
The
circuit
of
Forward Biasing
P-N
Junction
Diode
The
circuit
of
Biasing of a P-N
Diode
Volt-Ampere
Characteristics of a
Junction Diode
of
Reverse
Junction
P-N
Q.4
27
Ans. Avalanche Breakdown : This breakdown takes place due to strong electric field
in depletion layer. Due to this, there is a direct rupture of covalent bands and
electron-hole pairs so generated acquire a large amount of kinetic energy from
this field and collide with immobile ions, thereby generating further electronhole pairs. This process is cumulative in nature and results in avalanche of
charge carriers in very short time. This mechanism is called Avalanche
Multiplication.
Zener Breakdown : When P and N regions are heavily doped, the change charge
carrier density at the junction is abrupt and depletion layer of very thin width is
formed. The charge carriers of opposite nature are concentrated on both sides of
this layer. Due to this, strong electric field is generated is the depletion layer due
to its very small width even at nearly zero bias.
When diode is reverse biased, field across depletion layer becomes very high. In
this state the valance band of P-region comes in front of conduction band of Nregion and the electrons start flowing from valance band of P-region to
conduction band of N-region by tunnel effect due to strong electric field. This
type of breakdown is called Zener Breakdown.
Q.5
Explain the working of Zener Diode. How is it used for the Voltage
Stabilization?
Ans.: In reverse bias state, when applied voltage exceeds a certain limit, the current
through the P-N diode increases abruptly. This reverse voltage at which current
increases sharply, is called Zener Voltage. The ordinary diode may got damaged.
But zener diode is made to work in this breakdown region.
28
VZ = Vi RS I _ _ _ _ (1)
and current
diode will be
IZ = I IL
through
zener
_ _ _ _ _ (2)
We know that variation in input voltage Vi and load current IL makes output
voltage unregulated.
When a zener diode is connected in parallel with load RL, then zener diode keeps
the output voltage constant is all conditions for example, If voltage variation DC
takes place at any instant in the input voltage Vi. Let it changes the current by an
amount dI. This current variation simultaneously changes the current through
zener with the same amount, but the load current IL remains constant and thus
voltage across load remains equal to zener voltage Vz. Similarly if the load
current changes, the zener current increases or decreases to keep the current
through RS. Constant as seen from equation (1).
Q.6
Ans.: Varacter Diodes: The varacter is a reverse biased diode having a useful property
that the diodes in reverse bias state that the diodes in reverse bias state acts as a
capacitor whose capacitance varies with the applied reverse voltage.
The width of depletion layer increases with
reverse voltage. In this state P and N region
the diode are like the plates of the capacitor
the depletion layer is like the dielectric. We
know that capacitance is inversely
Circuit Symbol
the
of
and
29
proportional to the distance between the plates. Consequently larger the reverse
voltage, the larger is the width of depletion layer and hence the smaller the
capacitance. It means that the barrier capacitance is controlled by the reverse
voltage.
The varacter diode is widely used in FM
Radio, TV receiver etc.
Characteristic Curve
of Varacter Diode
Q.7
Ans.: Photodiode : It is a light a sensitive device which converts light signals into
electrical signals. It is a special type of diode which operates in reverse bias.
Construction
of
Photodiode
:
Photodiode is made of a
semiconductor
P-N
diode kept in a sealed
opaque plastic of glass
casing. It has a small
transparent
window
through which light falls
junction.
at
Ans.: Light Emitting Diode (LED) : P-N junction diode emits light when it is forward
biased. Such type of diode is called Light Emitting Diode.
30
These diodes are made from Gallium Phosphide (Ga) Materia or Gallium
Arsenide Phosphide (GaAsP) material.
The amount of light emitted by the diode is directly proportional to the forward
current i.e. higher the forward current, higher is the intensity of light emitted.
When
LED
is
forward biased, the
electrons from N
region and holes
from
P
region
move
towards the junction
and
recombine. In this process the electrons lying in the conduction band of N-region
fall into the holes in the valance band of P region. As a result energy of electrons
decreases and the energy equivalent to the difference of energy between the
conduction band and valance band is radiated in the form of light in LED.
Q.9
Ans.: Photovoltaic Cell : If the Potential difference is generated between the ends of
the semiconductor material due to light radiator fall on it, then this effect is
called photovoltaic effect and semiconductor device using this effect is called
Photovoltaic Cell. The generated potential difference depends upon the intensity
of light and the load. A Photovoltaic Cell consists of semiconductor material
such as silicon, germanium etc. which is joined with the metal plate as shown in
fig. below :
31
(b)
(d)
( )
3
4.
( )
The varactor diode is used as:
( )
32
(a)
(c)
5
10
11.
12.
13
(b)
(d)
Regulator
Switching circuits
( )
( )
Rectifier
Oscillator
1 : 104
(d)
1 : 104
(b)
(d)
( )
( )
( )
( )
( )
( )
( )
14
(b)
(d)
33
In reverse bias
Both in same bias
( )
S.NO.
Ans
Q:01
02
03
04
05
06
07
08
09
S.NO.
10
11
12
13
14
Ans
34
Chapter-4
Half Wave Rectifier : In which only one diode is used and only half of the
cycle of input alternating voltage is used.
(ii)
Full Wave Rectifier : In which the full wave of the input alternating
voltage is used.
Q.2
Describe working of Half Wave Rectifier with the help of circuit diagram.
35
1
T
idt
0
36
OR
Idc
i1dt +
i2 dt
T /2
T /2
1
=
T
I m sin t dt +
T /2
Cos t
Cos t
Im
t
cos t
Im
2
Cos
Idc =
( I m )sin t dt
T /2
I
= m
T
(ii)
T /2
1
=
T
T /2
0
T /2
cos t
T
T /2
2 T
.
Cos0
T 2
2Im
Cos
2
2 T
.T Cos
.
T
T 2
2
T
Efficiency :
Rectification Efficiency of Full Wave Rectifier
Output DC Power of Full Wave Rectifier Pdc
Input AC Power of Full Wave Rectifier Pac
Output DC Power
Input AC Power
I dc 2 RL
4Im2
I rms 2 ( R RL )
Pdc
Pac
RL
Im2
( R RL )
2
4 I m 2 RL
2
Efficiency
I m ( R RL )
2
Percentage Efficiency
8RL
( R RL )
0.812
R
1
RL
81.2
%
R
1
RL
Maximum Efficiency of Full Wave Rectifier will be 81.2% when R < < RL.
(iii)
37
OR
I rms 2
1
I dc 2
I ac
I dc
1/2
Substituting the value of Irms and Idc for a Full Wave Rectifier
r
2
Im2
.
1
2 4I m2
1/2
1/2
r = 0.482
r =48.2%
Q.4
Draw the circuit diagram of a Bridge Rectifier and explain its working.
As shown in figure Bridge Rectifier consists of four diodes D1, D2, D3 & D4 which
are connected to form a network just like wheat stone bridge.
38
Ans.: Filter : Filter is an electric circuit used for smoothing output current i.e. to
separate the AC component from the pulsating output current of the rectifier. It
is made by combining inductors and capacitors.
Shunt Capacitor Filter :
In this type of filter, a capacitor C is connected is parallel with the load resistance
RL. Filtration of AC component from diode output voltage depends upon the
energy storage capacity of the capacitor C. When diode (Suppose D1) output
voltage increases (Say from t1 to t2 as shown in figure) the capacitor stores energy
by charging to the peak B of the corresponding Input cycle upto time t 2. Beyond
t2 when input voltage decreases from its peak value, the diode D1 disconnects
from the source and load. So it stops conducting and capacitor starts discharging
energy thorough the load RL.
In the next half cycle of Input, this process takes place through diode D 2. The
process continues for other cycles and the rectifier with capacitor filter gives the
wave form of the output voltage like ABCD curve shown in figure.
Q.6
39
Ans.: Series Inductor Filter : The ripple in the rectifier output can be reduced by
connecting high independence inductor L in series with lead Resistance RL.
Working of Series Inductor Filter : When diode output current tends to rise
above the average value, of the inductor L stores energy in due to rise in the
current in the form of magnetic energy and offers impedance to AC component
and no resistance to DC component. Thus AC component is blocked and only
DC component reaches at the load. When the load current decreases below
average, it develops additional only in the inductor due to outflow of magnetic
energy and resists the decrement of the output load current. In this way the
fluctuation in the output current decreases by the inductor L.
Q.7
Ans.: SMPS :
40
(b)
(d)
Bridge rectifier
All of the above
( )
( )
3
(b)
(d)
81%
100%
( )
( )
( )
41
6.
( )
( )
A full wave rectifier is connected with an AC source of frequency 50 Hz. The output
current contains a ripple of what frequency?
(a)
25 Hz
(b)
50 Hz
(c)
100 Hz
(d)
60 Hz
( )
v
(c)
(d)
I
S.NO.
Q:01
02
03
04
05
06
07
08
Ans
09
42
Chapter-5
so Transistor.
Transistor is small in size and very light in weight. It needs a very low voltage
source and has longer life.
There are two types of Transistor :
(i)
PNP Transistor
(ii)
Q.2
43
NPN Transistor
Ans.: The connection of correct polarity of voltage across its two junctions for proper
working of transistor its known as Transistor Biasing. There are three ways of
biasing transistor :
(i)
(ii)
Saturation : IN this biasing, both emitter base junction and collector base
junction are forward biased. In this mode the transistor has very large
current to flow and used as a closed switch.
44
(iii)
Q.3
Cut Off : In this biasing both junction are reversed biased and transistor
has practically no current to flow and used as open switch.
Discuss sign convention and signs of various voltage and current in a Junction
Transistor.
Q.4
45
In NPN
In PNP
VEB
VCB
VCE
Ans.: In Junction Transistor, all the electrical quantities at the output are in general
controlled by the electrical quantities at the Input. The four electrical quantities
related with input and output are :
a.
Input Current
b.
Input Voltage
c.
Output Current
d.
Output Voltage
Q.5
(i)
(ii)
(iii)
Give the circuit diagram of Common Base NPN Transistor and give the
method of plotting input and output characteristics.
46
(i)
(ii)
(VCB, IE)
and
VCB
and
is
47
Keeping IE constant the set of waves drawn between IC and VCB are called
Output Characteristics. The output characteristics of transistor in CB
configuration may be divided into three region of operation :
Q.6
(i)
Active
(ii)
Saturation
(iii)
Cutoff
IC
IE
Current Amplification Factor () : In common emitter configuration, the ratio of
IC and IB for constant VCE is called DC Current Gain and given as
IC
IB
VCE
Cons tan t
_ _ _ _ _ (i)
IB
+1
IC
+1
_ _ _ _ _ (ii)
48
_ _ _ _ _ (iii)
1
1
Q.7
-1
_ _ _ _ _ (iv)
_ _ _ _ _ (i)
I2 = f ( I1 , V2)
_ _ _ _ _ (ii)
V1
dI1 +
I1
And
dI1 =
I2
I2
dI1 +
dv2
I1
V2
OR
V1 = h11 I1 + h12 V2
_ _ _ _ _ (v)
I2 = h21 I1 + h22 v2
_ _ _ _ _ (vi)
V1
dV2
V2
_ _ _ _ _ (iii)
_ _ _ _ _ (iv)
49
Here coefficient h11, h12, h21 & h22 are of different dimension so they are referred
as hybrid parameters.
hi = h11 =
V1
I1
hr = h12 =
V1
V2
hf = h21 =
I2
I1
H0 = h22 =
I2
V2
50
3.
4.
5.
6.
8.
(a)
Ic
IE
IB
(b)
IE
IB
IC
(c)
IE
IB
IC
(d)
IE
IC
IB
Doping of base
Rating of transistor
( )
( )
( )
(b)
Ic
IE
(d)
Which of the following transistor amplifiers has the highest power gain?
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
( )
Saturation region
Inverted region
( )
Faraday
Schockley
( )
(b)
(d)
10.
11.
12
13
( )
( )
(b)
(d)
10 db
1000 db
(b)
(c)
(d)
14
Figure represents a:
(a) PNP transistor
(b) NPN transistor
(c) Unipolar transistor
(d) None of the above
15.
16.
51
and
( )
( )
( )
( )
is given by:
(b)
52
(c)
17.
18
19.
20.
21.
22
23
24
25.
(d)
( )
Doping
None of the above
( )
(b)
(d)
Base
None of the above
( )
(b)
(d)
Ohm
None of the above
( )
(b)
(d)
( )
(b)
(d)
Voltage ratio
None of the above
( )
+ve
a.c. voltage
( )
(b)
(d)
Collector
All are equally doped
( )
(b)
(d)
Base
All of the above
( )
( )
26
27
S.NO.
Ans
S.NO
Ans
S.NO
Ans
53
Transistor is a:
(a)
Voltage operated device
(c)
Both of the above
(b)
(d)
( )
(b)
(d)
Amp lifer
All of the above
( )
Q:01
B
Q 10
B
Q 19
B
02
B
11
C
20
B
03
C
12
C
21
A
04
B
13
A
22
B
05
A
14
B
23
B
06
D
15
A
24
B
07
B
16
B
25
A
08
A
17
B
26
B
09
C
18
B
27
B
54
Chapter-6
Ans.: A Transistor raises the strength of a weak signal and thus acts as an Amplifier.
Q.2
55
Ans.: (1)
(2)
(3)
56
Q.3
Ans.: This amplifier is usually employed for voltage amplification, in this, a coupling
capacitor Cc is used its connect the output of first stage to the base (i.e. input) of
second stage and so on. As the coupling from Due stage to next stage is achieved
by a coupling capacitor followed by a connection to a shunt resistor, therefore,
such amplifiers are called resistance capacitance coupled amplifiers.
CC
OUTPUT
CE
As shown in fig. R1, R2, & RE form the biasing and stabilization network. The
emitter by pass capacitor CE offers low reactance path to signal. The coupling
capacitor Cc transmits ac signal but blocks DC.
Operation : When A.C. signal is applied to the base of first transistor, it appears
in amplified form across its collector load Rc. The amplified signal across Rc is
given to base of next stage through coupling capacitor C c. The second stage does
further amplification o the signal. In this way cascaded stages amplify the signal
and overall gain is considerably increased.
First stage gain G1 =
RAC
Rin
RcxRin
Rin input resistance of second stage
RC Rin
RC
Rin
57
The Rc coupled amplifier has excellent audio fidelity one a wide range of
frequency. Therefore it is widely used in voltage amplifiers. The main drawback
of R-C coupled amplifier is that it has poor impedance matching.
Q.3
Ans.: Feedback : Transfer of energy from output of the electric network to its input is
called Feedback, when a fraction of total voltage or current of the output of the
amplifier is fed back to its input, its working efficiency changes.
There are two types of Feedback :
Q.4
Ans.:
(i)
Positive Feedback : When the Input signal and feedback signal have the
same phase, the magnitude of the input signal increases by the addition of
feedback signal. This type of feed is also called Regenerative Feedback.
(ii)
Negative Feedback : When the input signal and the feedback signal have
the opposite phase, the magnitude of the input signal decreases, such type
of feed back is called Negative or Degenerative Feedback.
A
1 A
V0
Vi
. (i)
If Vif is input voltage with feedback and V0 is the output voltage then
A =
V0 '
Vif
58
Vif =
V0 '
..(ii)
A
V0 =
AVi
1 A
Q.5
Af =
V0 '
Vi
Af =
A
1 A
Hence proved.
A
1 A
This means that gain now depends upon the feedback fraction B i.e.
characteristics of feed back circuit. As feed back circuit is usually a resistive
network, the gain of the amplifier becomes independent of the ageing of
transistor, variation in supply voltage, temperature and frequency.
59
the amplifier is independent of signal frequency. The result is that voltage gains
of the amplifier will be substantially constant over a wide range of signal
frequency. The Negative Feedback, therefore improves frequency response i.e.,
increases bandwidth.
Q.6
60
output (i.e., oscillations), the feedback voltage must be equal to the input voltage
i.e.
Feedback Voltage = E1
Or
A m E1 = E1
Or
Am=1
Under these conditions (i.e., Am=1), even if there were no input generator (i.e.,
E1), a continuous output will be obtained across RL immediately after connecting
the necessary power supplies (i.e, VCC). The general layout of an oscillator is
shown in Fig. 31.2.
It is clear from Fig.(2) that continuous output (E2) will be obtained with no
extremely applied input signal. It provides its own input signal via the feedback
circuit. Thus, output voltage E2 = AE1 and feedback voltage = A mE1 = E1
(because Am = 1).
An amplifier with infinite gain is one that can produce an output signal without
any extremely applied input signal. It provides its own input signal via the
feedback circuit. Such a circuit is known as an oscillator.
Which of the following transistor amplifiers has the highest power gain?
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
The voltage gain of a common base amplifier is:
(a)
Zero
(b)
(c)
Unity
d)
An oscillator converts:
(a)
A.C. power into D.C. power
(b)
D.C. power into A.C. power
(c)
Mechanical power into A.C. power
(d)
A.C. power into rediation power
In a Cc amplifier voltage gain:
(a)
Remains constant
(b)
Equal to one
( )
( )
( )
(c)
(d)
5.
8.
.10
61
Is independent of input
Depends on output
( )
(d)
(b)
(d)
( )
( )
( )
( )
Af =
(c)
Af =
(b)
Af =
(c)
Af =
( )
( )
S.NO.
Q:01
02
03
04
05
06
07
08
09
Ans
S.NO.
10
Ans
62
Chapter-7
JFET
MOSFET
N-channel JFET
P-Channel JPET
E-MOSFET
(Enhancement
MOSFET)
Q.2
D-MOSFET
(Deplction
MOSPET)
63
Ans.: JFET : It consists of N or P type semiconductor bar whose ends are heavily
doped with same type impurity.
Types of JFET : JFET is of two types :
N
said to
P-type
this
with
64
type
and
the
drain
and
the
upon
(ID)
gate-source
voltage Vgs.
The dependence of
one
quantity over the other can be represented by plotting the curves between them.
These curves are called Characteristic Curves of JFET. These Characteristic
Curves are of two types:(i)
(a)
Ohmic
Region
(b)
Saturation Region
(c)
Break-down Region
65
(ii)
Transfer Characteristics : Keeping
output voltage VDS constant in the pinch off region, if
a graph is plotted between the saturated drain
current IDS and the gate voltage VGS, then the family
of curves so obtained, is called Transfer
Characteristics.
Q.5
types.
Ans.: Metal Oxide Semiconductor Field Effect Transistor (MOSFET) : MOSFET
works on the principle that the thickness and hence the resistance of the
conducting channel of a Semiconductor material can be controlled by a
transverse electric field across the insulator deposited on the semi conducting
material.
Types of MOSFET : MOSFET is of two types :
(i)
66
Q.6
(a)
N-Channel
(b)
P-Channel
Q.7
(1)
The input resistance of the MOSFET is very high of the order of (10) 10 to
(10)15 ohm where as the input resistance of the JFET is less i.e. of the order
of 108 ohm.
(2)
The drain resistance of the MOSFET is much lower than that of a JFET.
(3)
(4)
(5)
67
Ans.: Seven Segment Display : This can display all numerals and nine alphabets. It
consists of 7 rectangular LED/LCD which can be turned on/off to form desired
digit.
(1)
(2)
68
Dot Matrix Display : The another method of displaying numerals and letters is a
dot matrix formation of LEDs / LCDs in a monolithic structure.
Commonly used Dot Matrix for display are 5 x 7, 5 x 8, 7 x 9. Which can display
64 different alphanumeric characters by deriving the appropriate horizontal and
vertical inputs.
A FET consists of a:
(a)
Drain
(b)
Source
(c)
Gate
(d)
All of the above
( )
2.
4
5
7.
8.
9.
10.
69
BJT
MOSFET
( )
Two PN junction
Four PN junction
( )
a set of TRIACs
Two DIACs
( )
A thyristor is basically:
(a)
PNPN device
(c)
Two TRIACs
The gate- source diode of a JEFT should:
(a)
be forward biased
(b)
be reverse biased
(c)
be either forward or reverse biased
(d)
not be biased at all
A JFET:
(a)
Is a voltage controlled device
(b)
is a current controlled device
(c)
Has low input resistance
(d)
Has a very large voltage gain
(b)
(d)
( )
( )
( )
( )
(b)
(d)
Detector
Oscillator
( )
(b)
(d)
An SCR
A triac
( )
70
11.
12.
13
14.
15.
(b)
(d)
LED
All of the above
( )
( )
( )
( )
An FET consists of a:
(a)
Drain
(c)
Gate
( )
(b)
(d)
Source
All of the above
16.
After drain source voltage reaches pinch off value in a JFET, drain current
becomes:
(a)
Zero
(b)
Low
(c)
Saturated
(d)
Reversed
( )
17.
18
( )
( )
71
S.NO.
Q:01
02
03
04
05
06
07
08
09
Ans
S.NO.
10
11
12
13
14
15
16
17
18
Ans
72
PAPER - 117
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
OBJECTIVE PART- I
Year - 2011
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
2.
3.
( )
( )
The maximum number of electrons possible in the shell of principal quantum number
n1 is
(a)
(c)
4.
n2
2n
(b)
(d)
2n 2
n(n+1)
( )
(a)
(c)
5.
6.
7.
8.
9.
10.
Ionic bond
Molecular bond
(b)
(d)
73
Covalent bond
Metallic bond
( )
( )
( )
(b)
(d)
Forbidden band
Conduction band
( )
(b)
(d)
(b)
(d)
( )
74
( )
11.
( )
12.
(b)
(d)
Regulator
Switching circuits
( )
13.
14.
15.
16.
75
( )
(b)
(d)
Oscillator
Rectifier
( )
(b)
(d)
Bridge rectifier
All of the above
( )
( )
17.
18.
(b)
(d)
81%
100%
( )
76
(c)
19.
20.
21.
Pulsating d.c.
(d)
( )
( )
( )
In transistor, the relation among emitter current I g , base current I B and Collector
Current I B is:
22.
23.
24.
(a)
Ic
IE
IB
(b)
IE
IB
IC
(c)
IE
IB
IC
(d)
IE
IC
IB
25.
26.
27.
Doping of base
Rating of transistor
Ic
IE
(b)
Ic
(d)
( )
( )
IE
( )
Which of the following transistor amplifiers has the highest power gain?
(a)
Common base
(b)
Common emitter
(c)
Emitter follower
(d)
Common collector
( )
( )
A PET consists of a:
(a)
Drain
(b)
(c)
(d)
28.
29.
30.
31.
32.
33.
35.
Source
Gate
All of the above
( )
BJT
MOSFET
( )
Two PN junction
Four PN junction
( )
A thyristor is basically:
(a)
PNPN device
(c)
Two TRIACs
(b)
(d)
a set of TRIACs
Two DIACs
( )
(b)
(d)
Metallic
Mutual
( )
34.
77
1s 2 2s 2 2 p 2 3s 5
(b)
1s 2 2s 2 2 p 6 3s 2
(d)
1s 2 2 s 2 2 p 5 3s1
( )
( )
( )
78
(d)
Superconductors
( )
36.
For a P-N junction diode, the approximate ratio of resistances in reverse and forward bias
is:
(a)
1:1
(b)
103 :1
(c)
(d)
( )
10 3 :1
106 :1
37.
( )
( )
( )
38.
39.
40.
(b)
(d)
LCD
Seven-segment display
( )
Answer Key
1. ( )
2. ( )
3. ( )
4. ( )
5. ( )
6. ( )
7. ( )
8. ( )
9. ( )
10. ( )
11. ( )
12. ( )
13. ( )
14. ( )
15. ( )
16. ( )
17. ( )
18. ( )
19. ( )
20. ( )
21. ( )
22. ( )
23. ( )
24. ( )
25. ( )
26. ( )
27. ( )
28. ( )
29. ( )
30. ( )
31. ( )
32. ( )
33. ( )
34. ( )
35. ( )
36. ( )
37. ( )
38. ( )
39. ( )
40. ( )
79
_____________
DESCRIPTIVE PART-II
Year- 2011
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
Q.2
Q.3
(a)
(b)
(a)
(b)
(c)
(a)
Explain the working of P-N junction diode. Discuss its forward and reverse biased
characteristics.
(b)
Describe the construction and working of light emitting diode (LED) and mention
its two applications.
80
Q.4
(a)
What is meant by bipolar junction transistor? Draw a neat circuit diagram to study
the characteristics of a PNP transistor in common base configuration. Sketch the
input and output characteristics curves and indicate the active cut-off and
saturation regions.
Q.5
(b)
(a)
(b)
(i)
(ii)
(iii)
Efficiency
(iv)
Ripple factor.
F.E.T.;
(ii)
S.M.P.S;
(iii)
Opto-electronic devices.
______
81
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2010
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
2.
3.
( )
(b)
(d)
Covalent
Metallic
ion-electron
( )
82
(c)
4.
5.
6.
7.
8.
9.
10.
11.
12.
election-electron
(d)
repulsive
( )
(b)
(d)
Velocity
Potential
( )
( )
(b)
(d)
Free electron
Ions
( )
(b)
(d)
completely empty
Nothing can be said
( )
( )
( )
( )
( )
(b)
(c)
(d)
13.
14.
15.
16.
17.
19.
20.
( )
(b)
(c)
(d)
(b)
(d)
( )
( )
A rectifier
A modulator
( )
( )
The ratio of the resistance of a-p-n junction diode under forward biased and reverse
biased condition is:
(a)
102 :1
(b)
102 :1
(c)
18.
83
1 : 104
(d)
1 : 104
( )
( )
( )
Pure DC
None of the above
A full wave rectifier is connected with an AC source of frequency 50 Hz. The output
current contains a ripple of what frequency?
84
(a)
(c)
21.
25 Hz
100 Hz
(b)
(d)
50 Hz
60 Hz
( )
v
(c)
(d)
I
22.
23.
24.
(b)
(d)
base
none of the above
( )
Ie = Ic + Ib
(b)
Ic = Ie + Ib
(c)
Ie = Ib Ic
(d)
Ie = Ic Ib
Relation between
(a)
(c)
25.
and
( )
( )
( )
26.
27.
28.
29.
85
high gain
negative feedback
( )
( )
( )
( )
(b)
(d)
Rectifier
All of the above
30.
The minimum energy required to ionine the hydrogen atom from its ground state is:
(a)
+ 13.6 eV
(b)
10.2 eV
(c)
+ 10.2 eV
(d)
13.6 eV
( )
31.
32.
33.
34.
(b)
(d)
(b)
(d)
( )
( )
0.812
1.21
( )
86
(d)
( )
35.
In N-P-N transistor both emitter and collector junctions are forward biased. The
transistor will operate in:
(a)
Active region
(b)
Saturation region
(c)
Cut-off region
(d)
Inverted region
( )
36.
37.
38.
39.
40.
Heat energy
None of the above
( )
( )
The frequency range of the signal produced by audio frequency oscillator is:
(a)
(103 to 2 X 104) KHz
(b)
(103 to 2 X 104) MHz
(c)
(103 to 2 X 104) Hz
(d)
None of the above
( )
( )
An oscillator converts:
(a)
A.C. power into D.C. power
(b)
D.C. power into A.C. power
(c)
Mechanical power into A.C. power
(d)
A.C. power into rediation power
( )
Answer Key
1. (d)
2. (a)
3. (b)
4. (c)
5. (c)
6. (b)
7. (a)
8. (a)
9. (a)
10. (b)
87
11. (d)
12. (b)
13. (c)
14. (d)
15. (b)
16. (c)
17. (d)
18. (d)
19. (c)
20. (d)
21. (c)
22. (b)
23. (a)
24. (d)
25. (b)
26. (b)
27. (a)
28. (b)
29. (d)
30. (a)
31. (d)
32. (d)
33. (a)
34. (c)
35. (b)
36. (c)
37. (b)
38. (c)
39. (b)
40. (b)
_________
DESCRIPTIVE PART-II
Year- 2010
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
(a)
Explain the principle of energy bands in solids and classify the solids on the
basis of electrical conductivity.
Q.2
(b)
(a)
(b)
Explain the working of P.N. junction diode. Discuss its forward and reverse biased
characteristics.
Q.3
(a)
Describe the construction and working of light emitting diode (LED) and mention
its four applications.
Q.4
(b)
(a)
(b)
section filter.
88
Q.5
(a)
Describe the action of a transistor as an amplifier. Derive the relation for current
gain in CE configuration transistor amplifier using h-parameters.
Q.6
(b)
(a)
(b)
(c)
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2009
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
Liquids
Both in liquids and solids
( )
2.
Each energy band of a small piece of solid containing 100 atoms will have closely
spaced energy levels equal to:
(a)
50
(b)
100
(c)
200
(d)
500
( )
3.
4.
( )
(a)
(b)
(c)
(d)
89
( )
5.
The number of free electrons and holes in an intrinsic semiconductor increase when
the temperature:
(a)
Decreases
(b)
Increases
(c)
Stays the same
(d)
None of the above
( )
6.
7.
(a)
(b)
(c)
(d)
( )
( )
8.
The energy needed to detach the fifth valence electron from the Antimony (Sb)
impurity atom surrounded by Ge atoms is approximately:
(a)
0.001 eV
(b)
0.01 eV
(c)
0.1 eV
(d)
1.0 eV
( )
9.
( )
10.
When the graph of the Current Versus Voltage is a straight line, the device is referred
as:
(a)
Active
(b)
Linear
(c)
Nonlinear
(d)
Passive
( )
11.
90
(a)
(b)
(c)
(d)
Barrier potential
Peak voltage
Knee voltage
Breakdown voltage
knee
12.
The reverse saturation current in diode (Ge) at room temperature is of the order of:
(a)
InA
(b)
1 A
(c)
ImA
(d)
1A
( )
13.
If the input frequency is 60 Hz, the output frequency of hal-wave rectifier is:
(a)
30 Hz
(b)
60 Hz
(c)
120 Hz
(d)
240 Hz
( )
Photodiode is normally:
(a)
Forward biased
(b)
Reverse biased
(c)
Neither forward nor reverse biased
(d)
None of above
( )
( )
(b)
(d)
( )
(b)
(d)
Faraday
Schockley
( )
14.
15.
16.
17.
18.
19.
( )
(c)
(d)
20.
21.
91
Marconi
Doped by pentavalent material
( )
(b)
(d)
10 db
1000 db
( )
( )
22.
The d.c. output voltage drops from 6 V with no load to 5.8 v at full load. The
percentage regulation is:
(a)
1.72 %
(b)
3.33 %
(c)
3.45 %
(d)
6.67 %
( )
23.
If Em is the maximum voltage across secondary coil of transformer, then PIV of a half
wave rectifier circuit is:
(a)
Em
(b)
2 Em
(c)
24.
3 Em
(d)
0.5 Em
( )
( )
25.
A power supply with a.d.c. output of 140 V has 60 Hz ripple of 1.4 V what is the
percentage ripple:
(a)
0.1 %
(b)
1.0 %
(c)
0.14 %
(d)
2.4 %
( )
26.
A JFET:
(a)
Is a voltage controlled device
(b)
is a current controlled device
(c)
Has low input resistance
(d)
Has a very large voltage gain
27.
( )
92
(a)
(b)
(c)
(d)
28.
29.
30.
31.
32.
33.
34.
35.
36.
Be forward biased
be reverse biased
Be either forward or reverse biased
Not be biased at all
( )
( )
(b)
(d)
Detector
Oscillator
( )
(b)
(d)
An SCR
A triac
( )
(b)
(d)
LED
All of the above
( )
( )
( )
(b)
(d)
Silver is the best conductor, how many valence electrons do you think it has:
(a)
I
(b)
4
(c)
18
(d)
29
( )
( )
(c)
(d)
37.
38.
39.
40
93
( )
( )
(b)
Exp (2Eg/kt)
(c)
Exp (Eg/kt2)
(d)
Exp (Eg/2kt)
( )
an oscillator converts :
(a)
Ac power into DC power
(b)
DC power nto AC power
(c)
Mechanical power into AC powe
(d)
None of the above
( )
( )
Answer Key
1.
2. (b)
3.
4. (a)
5. (b)
6. (b)
7.
8. (b)
9. (d)
10. (b)
11. (b)
12. (b)
13. (b)
14. (b)
15. (a)
16.
17. (d)
18.
19. (b)
20. (b)
21.
22.
23. (a)
24.
25. (b)
26. (a)
27. (b)
28. (b)
29. (d)
30. (a)
31. (d)
32. (a)
33. (a)
34. (a)
35. (d)
36. (a)
37.
38. (d)
39. (b)
40. (b)
94
___________
95
DESCRIPTIVE PART-II
Year- 2009
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
(a)
Q.2
(b)
(a)
(b)
(ii)
(iii)
(iv)
(v)
Q.3
Discuss the V-I characteristics of a tunnel diode and write its applications.
Q.4
(a)
(b)
Draw an energy level diagram showing the donor and acceptor energy levels with
respect to valence and conduction bands.
Q.5
Q.6
(a)
(b)
(a)
(b)
96
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2008
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
2.
3.
(b)
(d)
( )
(b)
(d)
ve
None of the above
( )
Parallel
None of the above
( )
4.
The electrons that usually do not contribute to the electrical behaviours of the
materials are known as:
(a)
Bound electrons
(b)
Free electrons
(c)
Valence electrons
(d)
None of the above
( )
5.
Infinite
None of the above
( )
C/m3
Ampere/m3
( )
6.
7.
(b)
(d)
(c)
8.
9.
10.
11.
12.
13.
Recombination
(d)
97
( )
Ca
Ag
( )
GaP
GaN
( )
(b)
(d)
( )
The ripple before using any filter in a full wave rectifier is:
(a)
1%
(b)
41 %
(c)
48.2 %
(d)
None of the above
( )
( )
When Vn is the no load voltage and VL is voltage on load then % voltage regulation
is given by:
(a)
(b)
(c)
(d)
14.
( )
98
15.
(b)
(c)
(d)
16.
Figure represents a:
(a) PNP transistor
(b) NPN transistor
(c) Unipolar transistor
(d) None of the above
17.
18.
and
20.
21.
22.
( )
( )
is given by:
(c)
19.
(b)
( )
Doping
None of the above
( )
(b)
(d)
Base
None of the above
( )
(b)
(d)
Ohm
None of the above
( )
(d)
(a)
(c)
23.
24.
25.
26.
27.
28.
Zero
Unity
99
(b)
(d)
( )
(b)
(d)
Voltage ratio
None of the above
( )
( )
( )
A thyristor is basically:
(a)
A PNPN device
(b)
A combination of DIAC and TRIAC
(c)
A set of TRIACs
(d)
None of the above
( )
( )
An FET consists of a:
(a)
Drain
(c)
Gate
( )
(b)
(d)
Source
All of the above
29.
After drain source voltage reaches pinch off value in a JFET, drain current
becomes:
(a)
Zero
(b)
Low
(c)
Saturated
(d)
Reversed
( )
30.
100
(c)
31.
32.
33.
34.
35.
36.
37.
38.
39
Supply voltage
(d)
Drain current
( )
( )
( )
ve ions
Donor atoms
( )
( )
(b)
(d)
Oscillator
Rectifier
( )
( )
(b)
(d)
Amplifier
Regulator
( )
IB= Ic
(b)
IC= IB
(c)
IC= IE
(d)
IC= IB
( )
(b)
(c)
(d)
40
101
Inverted
180o out of phase with the input
All of the above
( )
Answer Key
1. (c)
2. (b)
3. (a)
4. (a)
5. (b)
6. (c)
7. (c)
8. (a)
9. (d)
10. (c)
11. (c)
12. (c)
13. (c)
14. (c)
15. (a)
16. (b)
17. (b)
18. (b)
19. (a)
20. (b)
21. (b)
22. (b)
23. (a)
24. (b)
25. (d)
26. (a)
27. (c)
28. (d)
29. (c)
30. (b)
31. (d)
32. (b)
33. (a)
34. (c)
35. (d)
36. (a)
37. (c)
38. (b)
39. (d)
40. (b)
__________
102
DESCRIPTIVE PART-II
Year- 2008
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
(a)
What are conduction band, valence band and forbidden gap? Explain these bands
by proper diagrams.
(b)
Q.2
Q.3
Explain V-I characteristics of a PN junction diode and also explain the effect of
temperature on a diode.
Q.4
Sketch bridge rectifier showing direction of current flowing through the circuit and
explain its working.
Q.5
Discuss the current components in a junction transistor and hence prove that
IE=IB+IC
Q.6
_________
103
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2007
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1
2.
3.
4.
5.
6.
7.
( )
(b)
(d)
1 3 A
0
( )
(b)
(d)
ionic
None of the above
( )
(b)
(d)
Cu
Si
( )
is:
( )
14
28
( )
decreases
becomes zero
( )
(b)
(d)
104
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
7 eV
Zero
( )
( )
( )
(b)
(d)
forbidden band
conduction band
( )
reverse
none of the above
( )
(b)
(d)
( )
(b)
(d)
oscillator
rectifier
( )
2
4
( )
( )
A photodiode is:
(a)
forward biased
(c)
zero biased
( )
(b)
(d)
reverse biased
none of the above
18.
19.
20.
21.
22
23.
24.
25.
26.
105
(b)
(d)
40.6 %
90 %
( )
(b)
(d)
0.81
1.21
( )
(d)
(b)
(d)
2
4
( )
(b)
(d)
reverse
all of the above
( )
( )
of a transistor is:
(a)
(b)
(c)
(d)
and
(a)
(b)
(c)
(d)
(b)
(d)
( )
is:
( )
base
None of the above
IE= IC+IB
( )
106
(c)
27.
28.
29.
30.
31.
32.
33.
34.
35.
36.
IE = IBIC
(d)
IE = ICIB
( )
(b)
(d)
imaginary
non-complex
( )
(c)
(d)
(b)
(d)
(b)
(d)
bandwidth
All of the above
( )
(b)
(d)
rectifier
detector
( )
( )
( )
( )
( )
LCD
None of the above
( )
( )
(b)
(d)
PbS
All of the above
(a)
(c)
37.
38.
39.
40.
0
8
107
(b)
(d)
5
4
( )
(b)
(d)
1
4
( )
(b)
(d)
power
I/O device
( )
(b)
(d)
104 106
110
( )
(b)
(d)
0.72 eV
2.4 eV
( )
Number of capacitors in
(a)
0
(c)
2
Answer Key
1. (d)
2.
3. (a)
4. (d)
5. (d)
6. (a)
7. (a)
8. (a)
9. (a)
10. (d)
11. (b)
12. (b)
13.
14.
15. (d)
16.
17. (b)
18. (b)
19. (a)
20. (b)
21.
22. (a)
23.
24. (b)
25. (b)
26. (b)
27.
28. (b)
29. (a)
30. (b)
31. (a)
32.
33.
34. (b)
35. (d)
36.
37.
38. (b)
39. (a)
40.
______________
108
DESCRIPTIVE PART-II
Year- 2007
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
(a)
(b)
Q.2
Q.3
(a)
(b)
Q.4
Q.5
Q.6
Describe in brief:
(a)
SCR
(b)
FET
(c)
SMPS
__________
109
SEMICONDUCTOR PHYSICS,ELECTRONIC
DEVICES & CIRCUITS
PAPER - 117
OBJECTIVE PART- I
Year - 2006
Time allowed : One Hour
Maximum Marks : 20
The question paper contains 40 multiple choice questions with four choices and student will
have to pick the correct one (each carrying mark).
1.
2.
3.
4.
5.
6.
7.
(b)
(d)
Ionic
neutral
( )
(b)
(d)
1.5 2.5 eV
3.5 4.5 eV
( )
In intrinsic semiconductors:
(a)
nh < ne
(c)
nh = ne
(b)
(d)
nh > ne
nh = ne = 0
( )
(b)
(d)
Ohm
Ampere
( )
0.6 mV
0.6 V
( )
1.6 X 1019 V
1
V
( )
(b)
(d)
110
(c)
(c)
8.
9.
10.
11.
12.
13
14.
15.
16.
( )
(b)
(d)
In reverse bias
Both in same bias
( )
+ve
a.c. voltage
( )
(b)
(d)
Collector
All are equally doped
( )
(b)
(d)
Base
All of the above
( )
Transistor is a:
(a)
Voltage operated device
(c)
Both of the above
(b)
(d)
( )
(b)
(d)
Amp lifer
All of the above
( )
Af =
(c)
Af =
(b)
Af =
(c)
Af =
( )
(b)
(d)
BCC
None of above
(b)
Reverse bias
( )
(c)
17.
18.
19.
20.
21.
22.
23.
24.
25.
Zero bias
111
(d)
( )
(b)
(d)
Si
All of the above
( )
(b)
(d)
Photo diode
Zener diode
( )
IC=IB+IE
All of the above
( )
(b)
(c)
(d)
( )
(b)
(d)
Amplifier
None of the above
( )
(b)
(d)
Amplifier
All of the above
( )
110
1001000
( )
110
1001000
( )
2
4
( )
(b)
(d)
112
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
(b)
(d)
2
4
( )
(b)
(d)
3
5
( )
(b)
(d)
2
4
( )
(b)
(d)
2
4
( )
Increases
None of the above
( )
(b)
(d)
Rectifier
None of the above
( )
(b)
(d)
20.3 %
81.2%
( )
(b)
(d)
0.47
None of the above
( )
(b)
(d)
LCD
Seven segment display
( )
36.
37.
38.
39.
40.
(b)
(d)
113
Current
None of the above
( )
Optical device
All of the above
( )
( )
( )
( )
(b)
(d)
Amplifiers
Display devices
Answer Key
1. (a)
2. (a)
3. (c)
4. (b)
5. (b)
6. (b)
7. (a)
8. (b)
9. (b)
10. (a)
11. (b)
12. (b)
13. (d)
14. (b)
15. (a)
16. (b)
17. (c)
18. (d)
19. (c)
20. (d)
21. (a)
22. (c)
23. (c)
24. (a)
25. (c)
26. (c)
27. (d)
28. (c)
29. (b)
30. (a)
31. (a)
32. (c)
33. (c)
34. (b)
35. (b)
36. (d)
37. (c)
38. (c)
39. (a)
40. (a)
_____________
114
DESCRIPTIVE PART-II
Year- 2006
Time allowed : 2 Hours
Maximum Marks : 30
Attempt any four questions out of the six. All questions carry 7 marks each.
Q.1
Q.2
Q.3
Q.4
Q.5
Q.6
(a)
(b)
(a)
(b)
(a)
(b)
(a)
(b)
(a)
(b)
Electronic oscillator
(b)
SMPS
(c)
Display devices.
dependence.
115
Key words
Amplification: a method for increasing the amplitude (or loudness) of electrical signals
Amplifier: An electronic device which generates a high power signal based on the
information supplied by a lower powered signal. A perfect amplifier would add or
subtract nothing from the original except additional power - these have not been
invented yet
Amplitude: the loudness of sound waves and electrical signals. Amplitude is measured
in decibels (dB) or volts
Crystal - solid featuring periodic spatial arrangement of atoms throughout the entire
piece of material
Semiconductors, III-V - III-V semiconductors are fabricated using elements from 3rd
and 5th group of periodic table; e.g. GaAs, Gap, GaN, GaAlAs.
Current Density - Current per unit area.
Energy gap - a range of forbidden energy levels between two permitted bands.
Fermi Level - the Fermi level is the energy at which the probability of occupation by an
electron is exactly one half.
Impurity - a substance that is incorporated into a semiconductor material and provides
free electrons (n-type impurity) or holes (p-type impurity).
Intrinsic Semiconductor - a semiconductor that has no impurities to change the
conduction properties of the material.
Lattice - a regularly space array of points that represents the structure of a crystal.
Crystals are composed of groups of atoms repeated at regular interval in three
dimensions with the same orientation.
LASER - Light Amplification by the Stimulated Emission of Radiation
116
Mobility - in an electrical conductor, the ratio of the drift speed and the applied electric
field.
n- type Semiconductor - material doped with donors to increase the population of free
electrons.
p-n junction - semiconductor material doped in with donors and acceptors to form a
sharply defined region with over which the doping type changes from p to n. A single
p-n junction acts as a diode
p- type Semiconductor - semiconductor material doped with acceptors to create 'holes'
Semiconductor - a material that is characterised by ability to conduct a small a electrical
current. In terms of the band model, the lower energy levels are filled at low
temperatures
Valence Band - the highest occupied energy level in a solid crystal semiconductor or
insulator that is occupied by electrons at T= 0K.
The number identifying an element in the periodic table, the atomic number of an
element equals the number of protons (which also equals the number of electrons) in
the nucleus of a neutral atom.
Energy Band: The continuous range of allowed energies for electrons in a solid.
Individual atoms can have only certain quantized energies. As atoms bond to form
solids, each energy level "spreads" to accommodate the shifted levels of adjacent atoms.
Atoms in the solid can occupy any energy in one of the newly-formed "bands".
Band Gap:
The range of energies between two allowed energy bands in a solid. Electrons in the
solid can only take energies in the allowed bands, so electrons cannot have one of the
energies in the gap
Charge Carrier
A particle having electric charge that can move freely through the material. In
conductors, electrons are free to move, so they are the charge carriers. Holes are the
charge carriers in p-type semiconductors. Positive or negative ions can be charge
117
118
Donor
An element that "donates" an electron to a semiconductor atom. Donors will have one
more valence electron than the semiconductor they accept from.
Drift Velocity
The average velocity of charge carriers in a material. This is not the same as the average
speed.
Electron
A fundamental particle with negative charge found in atoms. It has a mass of 9.11 x 1031 kilograms and a charge of - 1.6 x 10-19Coulombs.
ElectronVolt (eV)
A unit of energy, equal to the energy gained by an electron that passes through a
potential difference of 1 Volt. An electronVolt is related to the SI energy unit Joule by
the charge of the electron e as follows:
1 eV = 1.6 x 10-19 J.
\
Forward Bias
A voltage applied to a diode (a p-n junction) in a direction that does produce electric
current. When a p-n junction is forward biased, the positive terminal of a battery is
connected to the p-side of the diode, and the negative terminal to the n-side.
Intrinsic (Pure) Semiconductors
A semiconductor comprised of a single type of molecule, with no impurities. Pure
semiconductors are typically poor conductors of electricity.
Light-Emitting Diode (LED)
A diodethat has been constructed a) to optimize the emission of light as conduction
electrons and holes recombine at a p-n junction.
Neutron
A fundamental particle with no electric charge found in the nuclei of atoms. It has a
mass of 1.675 x 10-27 kilograms.
Proton
A fundamental particle with positive charge found in the nuclei of atoms. It has a
119
120
Bibliography
S. no. Book Name
Author
Dr A k Nagawat ,Dr S S C B H
Semiconductor physics
Publication
rawat
2
Fundamentals
Semiconductor Physics:
An Introduction
LINKS:
Karlheinz Seeger
Springer, 2004