Bipolar Junction Transistors

Bipolar Junction Transistors
Bipolar junction transistors (BJT) are active 3-terminal

devices with areas of applications:
amplifiers, switch etc.
high-power circuits
high-speed logic circuits for high-speed computers.
BJT structure:
sandwich of alternating type of Si-layers
npn BJT: sequence of n-p-n

pnp BJT: sequence of p-n-p
npn BJTs are most widely used.
S. Saha
N+
C
N-
N+
HO #4: ELEN 251 - Bipolar Transistors
Page 1
A. A Typical NPN-BJT Fabrication

Antimony Implant
1. Form buried collector (BC)
SiO2
N+ Buried Collector
N-Epi
2. Form N epitaxial collector
N+
strip oxide
clean
grow single crystal epi layer
S. Saha
grow oxide
mask #1: BC
implant Sb
drive-in
Page 2
NPN-BJT Fabrication
Boron
3. Form junction isolation

P+
N-Epi
P+
N+
grow oxide
mask #2: ISO
implant B
oxidation
Phosphorus
4. Form deep collector (sinker)

P+
N-Epi
N+
P+
N+
P
S. Saha
mask #3: Collector

implant P
drive-in P+ and N+
oxidation
Page 3
NPN-BJT Fabrication
B
5. Form Base region

P
P+
N-Epi N+
P+
N+
mask #4: Base

implant B
oxidation
P
As/P
P+
N+
6. Form Emitter region

N-Epi N+
P+
N+
P
S. Saha
mask #5: Emitter

implant As/P
drive-in emitter
oxidation
Page 4
NPN-BJT Fabrication
7. Define contact area
P+
N+
N-Epi N+
P+
mask #6: Contact

etch oxide
N+
P
Contacts
8. Interconnect
P+
N+
N-Epi N+
P+
N+
deposit Aluminum
anneal
mask #7: Metal
P
9. Deposit protective dielectric (SiO2 or Si3N4). Mask #8 to open bonding pads.
S. Saha
Page 5
NPN-BJT: Active Region Doping Profile

a) Final 2d-cross-section of an
npn BJT structure.
Contacts
N+
1.E+21
P+
-3
N-Epi N+
Concentration (cm )
P+
b) 1d-cross-section along
the intrinsic device.
N+
NPN
Intrinsic
device
N+ Emitter
1.E+20
N+ Burried layer
1.E+19
P Base
1.E+18
1.E+17
N- Collector
1.E+16
1.E+15
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

Depth (um)
S. Saha
Page 6
NPN-BJT: A Typical Layout

Atypical layout for the vertical npn-BJTs described in the
fabrication example:
N Epitaxial layer
P+ Isolation
N+ Buried layer
P+ Base
N+ Emitter
CONTACT
Base
S. Saha
Emitter
Collector
Page 7
B. Basic Features of IC BJT Structures
this built-in -field is set

up to establish an
equilibrium between:
-3
N+ Emitter
1.E+20
N+ Burried layer
1.E+19
P Base
1.E+18
1.E+17
N- Collector
1.E+16
1.E+15
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
mobile carriers attempt

to diffuse away from high
concentration regions
mobile carriers pulled by the -filed (drift) of fixed ionized donors

(ND+) or acceptors (NA) left behind by mobile carriers.
S. Saha
1.E+21
Concentration (cm )
The base region is nonuniformly

doped.
This
results in a built-in -field
across the base which aids
e transport from E C.
Depth (um)
-field is obtained from: diffusion = drift

Page 8
Basic Features of IC BJT Structures

The parasitic elements exist in a BJT structure include:
base resistance, RB from base contact to active area
collector resistance, RC (predominantly through n-layer).
Isolation must be provided between adjacent devices:
reverse biased PN junctions
trench isolation.
The N- collector region adjacent to the base:
reduces base-collector capacitance, CBC
improves base-collector break down voltage, BVCB
decreases base width (WB) modulation by the collector
voltage
but adds series resistance to the device.
S. Saha
Page 9
C. Basic BJT Operation

WB
N+
e
holes
+
0.7 V
forward bias
NMost
of the
e
N+
C
+
5V
reverse bias
In a typical npn-BJT operation:

an external potential ( 0.7 V) is applied across the E-B
junction to forward bias it
e are injected into the base by the emitter. (Also, holes are
injected into the emitter but their numbers are much smaller
because of the relative values of NA, ND).
S. Saha
Page 10
Basic Operation
if WB << Ln (diffusion length) in the base, most of the injected e get
into the collector without recombining. A few do recombine; the
holes necessary for this are supplied as base current.
the e reaching the collector are collected across the C-B junction
depletion region.
E
IB
IC
Electrons flowing
emitter to collector
IE
IE
Holes
into emitter
IC
Recombining electrons
IB
Since most of the injected e reach the collector and only a few holes
are injected into the emitter, the required IB << IC.
Therefore, the device has a substantial current gain.
S. Saha
Page 11
Basic Operation - Derivation of Currents

In order to derive the basic relationship for e current flowing
between E C, we assume that the device current gain is high.
IB
or, Jp hole current density in the base 0

or, Jp 0 = qppx qDp(dp/dx)
x =
D p 1 dp kT 1 dp
=
p p dx q p dx
(1)
(2)
For uniformly doped base, dp/dx = 0,x = 0 and the e

travelling through the base will move by diffusion only.
However, in IC-BJTs dp/dx 0 and x 0. The direction of this
field aids e flow from E C and retards e flow from C E.
S. Saha
Page 12

The current due to e flow between E and C is given by:
Jn = qnnx + qDn(dn/dx)
(3)
Substituting the expression for aiding -field, x from (2) in (3)

we get:
J n = kT n
dn
n dp
+ q Dn
dx
p dx
(4)
q D n dp
dn
n
p
=
+
Jn
p dx
dx
q Dn d ( pn )
=
(5)
Or, J n
p dx
We integrate (5) over the quasi-neutral base region, WB.
S. Saha
Page 13

E
N+
xdeb
xdbc
N-
WB
x=0
Jn
WB
p dx
=
q Dn
x = WB
W B d pn
dx
dx
(6)
In (6) Jn is pulled outside the assuming no recombination of

e- in the base region, i.e. Jn = constant.
W B p dx
Jn
= pn(W B ) pn(0)
q Dn
o
S. Saha
(7)
Page 14
pn-Product at the Depletion Edge

In thermal equilibrium, we define:
npo # e in neutral P-region
N
nno
ni2/NA
pno # holes in neutral N-region

ni2/ND
nno #
pno
in N region ND
+
+
+
+
+
+
+
+
+
+
+
P
ppo
npo
ppo # holes in P region NA
Built in - potential of pn - junction: bi
Then, we can show that : nno = n p o e

p po = p n o e
S. Saha
kT N D N A kT nno
ln
=
ln
2
q
ni
q
n po
q bi
kT
q bi
kT
(8)
(9)
Page 15

Under the applied bias, VA we replace bi by (bi VA) in (8) &
(9) to obtain the non-equilibrium carrier density as:
N
P
q V
nn + + pp
A
bi
(10)
nn = n p e
p p = pn e
kT
bi V A
kT
pn
(11)
pno
+
+
+
+
+
+
+
+
+
np
npo
We now assume low-level injection i.e. the injected carrier

densities are small compared to the background concentrations
so that nn = nno and pp = ppo. Then from (10) and (8),
q bi V A
q bi
n =
= n = n
kT
n
e
p
n
no
po e kT

S. Saha
(12)
Page 16

Therefore, under low-level injection we get from (12):
n p = n po e
qV A
kT
(13)
Similarly from (9) and (11) we can show under low level injection:
p n = p no e
qV A
kT
(14)
We know , n po = ni2 / p po = ni2 / p p ; and pno = ni2 / nno = ni2 / nn

Therefore, for low level injection we get from (13) and (14):
pn = n e
2
i
qV A
kT
(15)
(13) & (14) define the minority carrier densities at the edge of the
space charge region under applied bias while (15) defines the pnproduct of carriers at the depletion edge.
S. Saha
Page 17

Thus, the pn-products at the edge of the depletion regions
within the base of an npn-BJT are given by:
pn(0 ) = n e
2
i
qV BE
kT
pn(W B ) = n e
2
i
qV CB
kT
qV CB
qV BE
q n e kT e kT
Jn =
(from Eq (7))
WB
pdx
(16)
(17)
2
i
(18)
Dn
Now, the total charge in the un-depleted base region is given by:
WB
(19)
Q B = qA pdx
o
S. Saha
Page 18
Basic Operation - Base Gummel Number

qV CB
qV BE
kT
kT
e
I n I s e
(20)
q A2 ni2 D n
where, I s =
QB
(21)
This is an extremely important result. Note that:

1 Usually, only one of the two exponential terms is important
since one junction is typically reversed biased. When the device
is in saturation, both junctions are forward biased and both
terms must be included.
QB W B
2 The quantity,
= N A ( x)dx is called the base Gummel number.
qA
o
It is the total integrated base charge (atoms/cm2). Since I 1/QB, it
is important to minimize QB. IC transistors use low base doping
levels.
S. Saha
Page 19
IC Vs. VBE
Since BC junction is reversed biased the eqVBC/kT term is
negligible and we can show from (20) and (21):
2
q A2 D n ni2 qVkTBE
(22)
e
In =
QB
1.E-01
(22) predicts that IC vs. VBE is related

exponentially.
Expt
1.E-02
Ideal
1.E-03
2
JC (A/cm )
1.E-04
Decade
change
in JC
1.E-05
1.E-06
1.E-07
1.E-08
60mV
1.E-09
JS
1.E-10
0.0
0.2
0.4
VB E (V)
S. Saha
0.6
Slope = (kT/q)ln(10)
= 60 mV/(decade I) (@ 25 oC)
Relationship holds extremely well for IC
transistors over many decades of JC.
Generally, QB is obtained by integration
over the base region. Therefore, QB is
typically well controlled to ~ 1012 cm-2 to
give high IC for a given VBE.
Page 20
D. Current gain
Let us consider the factors that can contribute to base
current in a BJT:
1 Recombination in the neutral base region
2 Hole injection into the emitter
3 Recombination in the E-B space charge region.
E
Electrons flowing
emitter to collector
IE
Holes
into emitter
IC
Recombining electrons
IB
S. Saha
Page 21
1. Recombination in the Neutral Base Region

Typically, some of the e traveling the base will recombine with
majority carrier holes. (This is not important for modern IC BJTs).
N+
pn
pno
np
QB
npo
pno
If we assume that the base is uniformly doped so that x = 0, the

e current and continuity equations are:
d np
I n = qA D n
(23)
dx
2
d n p n p n po
=0
Dn
(24)
2
dx
n
S. Saha
Page 22
Recombination in the Neutral Base Region

Similar to PN-junction, the general solution of (24) is:
np npo = K1ex/Ln + K2ex/Ln
(25)
The appropriate boundary conditions (from Eq 13) are:
np(x = 0) = npoeqVBE/kT
np(x = WB) 0
Using these boundary conditions we get from (25):

W B x
sinh
qV BE
Ln
=
kT
(26)
n p n po e
W B
sinh
Ln
Substituting (26) in (23) we get the emitter (InE) and collector
(InC) e currents.
S. Saha
Page 23
Base Transport Factor

qA D n n p qV BE
W B
o
(27)
=
1
coth
(@ x = 0)
e kT
I nE
Ln
Ln
qA D n n p qV BE
W B
o
=
1
csc
h
(@ x = WB ) (28)
e kT
I nC
Ln
Ln
The ratio of these two currents is defined as the base
transport factor and is given by:
T InC/ InE = sech(WB/Ln)
(29)
In modern IC BJTs, WB << Ln and the recombination in the

neutral base region is significantly low.
If WB << Ln, we can use series expansion of sech(WB/Ln)
from (29) to get:
T 1 WB2/2Ln2
S. Saha
Page 24
Base Transport Factor

In a typical advanced BJT, WB 1 m and Ln 30 m
T 0.9994.
This value of T would imply a forward current gain:
IC
I
T
T nE =
> 1600
I B I nE I nC 1 T
which is higher than the normally observed value of F in IC

BJTs with WB = 1 m. Thus, T is NOT usually a limiting
factor in current gain.
The base current due to T is: (InE - TInE = (1 - T)InE)
q AE ni2 W B qV BE
e kT 1
I B REC =
2 N A n
(30)
where n is e lifetime in the base.

S. Saha
Page 25
2. Hole Injection into the Emitter

The dominant mechanism in limiting in modern BJTs is hole injection
from B to E. This process must occur because VBE reduces E B eflow barrier and also B E hole flow the barrier.
xE
WB
xE
E
B
C
E
B
C
pn
np
pn
pn
np
pn
xE >> LpE
xE << LpE
The injected hole currents in each case come directly from the analysis
of long base and short base diodes (E denotes emitter properties):
D pE qV BE
e kT 1
x E >> L pE : I pE = qA n
N DE L pE
(31)
D pE qV BE
e kT 1
x E << L pE : I pE = qA n
N DE x E
(32)
2
i
2
i
S. Saha
Page 26
Emitter Efficiency
The emitter injection efficiency is defined as:
I pE
I
I
nE
nE
=
=
= 1 / 1 +
I nE + I pE I TOT
I nE
(33)
Then from (27) and (32) we get:

1
=
(34)
W
B N AB D pE
1+
x E N DE D nB
(If WB >> Ln or XE >> Lp, then LB diode approximations replace WB
and/or XE with Ln or Lp.)
(34) is only approximately correct in IC structures because NA and
ND are not constant. Note that is made close to 1 by:
(1) making NDE >> NAB; (2) WB small;
(3) XE large (prevent hole recombination at E contact).
S. Saha
Page 27
3. E-B Space Charge Recombination

T and are independent of VBE imply that the ratio of
collector to base current is a constant, independent of VBE i.e.
current level.
In practice, the ratio of the two currents is NOT independent
of IC. At low levels the dominant reason is recombination in
the E-B depletion region.
e
injection
recombination
hole
injection
From PN junction theory, we find that some recombination of

the carriers moving through the depletion region will occur,
causing a recombination current.
S. Saha
Page 28
E-B Space Charge Recombination

qA ni x E qV A
IREC =
e 2 kT
2 o
where o is the lifetime in the depletion region.
(35)
Note:
This current flows in the EB circuit and does not directly affect IC.
Thus, as IREC becomes important, the ratio of IC/IB will change.
eqVBE/2kT dependence is important at low current levels.
Summarizing our discussion of current gain:

I pE I nE I nC I REC
I
B
+
+
I C I nE
I nE
I nE
1
N A W B D P W B N A W B x E qV BE
+
+
e 2 kT
2
N D x E D n 2 L n 2 D n ni o
1
S. Saha
(36)
Page 29
E. Heavy Doping Effect in BJTs

The modern BJTs are limited in due to emitter efficiency.
From simple analysis we found for SB-diodes Eq (34):
1
=
N D
(37)
1 + W B AB pE
x E N DE D nB
Eq (37) as NDE
[ /[1) ] as NDE for the heavily doped emitters
max
Simple theory (Eq 37)

Actual
1019
S. Saha
1020
1021
NDE (cm3)
Page 30
Heavy Doping Effect: Bandgap Narrowing

in actual devices is due to heavy doping effect in the
emitter.
The effective ionization energy for impurities decreases at
high doping (> 1018 cm3) level which can be described as
bandgap narrowing (BGN) in the semiconductor. Assume,
Eg = reduction in energy gap, Eg due to heavy doping effect
Ego = bandgap for the lightly doped value of semiconductors
Due to BGN, the intrinsic carrier concentration is given by:

nie2 = CT3e(Ego Eg)/kT = nio2eEg)/kT
(38)
where, nio2 = CT3eEgo/kT is the lightly doped value of ni.

BGN is directly responsible for as well as in actual
devices.
S. Saha
Page 31
BGN due to Heavy Doping Effect

For an NPN transistor in the active mode of operation, the
injected e current into base is:
J nE
2
qV BE
q D nB nib2
q D nB nib2 qV BE
e kT
e kT =
WB
QB
N AB ( x)dx
(39)
Here, QB = base Gummel number; WB = width of the neutral

base region.
Similarly, the injected hole current into emitter is:
J pE
qV BE
q D nB nie2
q 2 D nB nie2 qV BE
e kT
e kT =
L pE
QE
N DE ( x)dx
(40)
Here, QE = emitter Gummel number; LpE = hole diffusion length

into E. If width of the neutral E, xE < LpE, we use xE in (40).
S. Saha
Page 32

=
1+
1
=
J pE
J nE
1+
2
pE ie
D n
DnB nib2
1
WB
pE
N AB ( x)dx
(41)
N DE ( x)dx
Assuming no BGN in the lightly doped (< 1018 cm3) base

region, we get from (38): nie2/nib2 = eEg/kT
Therefore, If NAB and NDE are constants, we get from (41):
=
1+
1
=
J pE
J nE
1
D pE N AB WB kTEg
1+
e
DnB N DE L pE
(42)
If xE < LpE, replace LpE by xE in (42).

S. Saha
Page 33

=
1+
1
=
J pE
J nE
1
D pE N AB WB kTEg
1+
e
DnB N DE L pE
(43)
Eq (34) shows that by the term eEg/kT

In order to estimate the reduction in emitter efficiency we
need to know how Eg varies with NDE.
Typically Eg 100 200 meV for NDE 1019 1020 cm3.
Note the validity of (43):
NDE and NAB are not constants but f(x)
in heavily doped regions, the hole lifetime and hence LpE
depends strongly on doping level.
S. Saha
Page 34
Home Work 2: Due April 14, 2005

1) The cross-section of a doublepoly bipolar transistor fabricated
as part of a silicon IC is shown
below. Design a plausible process
flow to fabricate such a structure
following the idea of junction
isolated npn-bipolar process flow
discussed in class. Your answers
should be given in terms of a
series of 2d-sketches of the
structure after each major process
steps.
Briefly explain your reasoning for
each step and the order you
choose to do things. Clearly, label
all the sketches.
S. Saha
Trench-Isolated double-poly NPN
Page 35

2) An npn-transistor has a cross-sectional area of 105 cm2 and a quasi-neutral
base region that is uniformly doped with NA = 4x1017 cm3, Dn = 18 cm2/sec,
and WB = 0.5 m.
(a) If a close emitter contact is used so that the recombination in the neutral emitter
can be neglected, find the emitter injection efficiency . Assume that the total
emitter Gummel number is 8x109 atoms and Dp = 2 cm2/sec.
(b) If the minority-carrier lifetime in the base is 106 sec, estimate the base transport
factor T.
(c) What is for this transistor?
3) Consider a uniformly doped p-base region of an npn-BJT device with base

width = WB, emitter area = AE, base doping = NA under active normal bias.
Use electron drift-diffusion Eq. to show that the injected electron current InE from nemitter at the edge of the emitter depletion region in the p-base region can be
approximately given by:
qAE D n ni2 qV BE
e kT 1
I nE =
N AW B
S. Saha
Page 36

4)
A bipolar transistor is fabricated by growing a P-type epitaxial layer on an

N-substrate. The P-type base is uniformly doped at 5x1017 cm3. The epilayer is 1.0 m thick. The emitter is formed by ion implantation of As (Q =
5x1015 @ 50 KeV). The emitter depth of 0.28 m.
(a) Calculate the base Gummel number.
(b) Estimate the transistor current gain assuming it is limited by emitter
efficiency. Neglect heavy doping effects and assume Dn = 2Dp.
(c) If a reduction in energy gap due to heavily doped emitter is ~ 200 mV, recalculate to include heavy doping effects. Assume n = 1350 cm2/v.sec, pE =
0.2 nsec, and LpE = 0.2 m. State any assumptions you make.
(d) Comment on your results in part (b) and (c).
S. Saha
Page 37

Bipolar Junction Transistors

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Bipolar Junction Transistors

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Bipolar Junction Transistors

Bipolar junction transistors (BJT) are active 3-terminal

npn BJT: sequence of n-p-n

npn BJTs are most widely used.

HO #4: ELEN 251 - Bipolar Transistors

A. A Typical NPN-BJT Fabrication

1. Form buried collector (BC)

2. Form N epitaxial collector

HO #4: ELEN 251 - Bipolar Transistors

3. Form junction isolation

4. Form deep collector (sinker)

mask #3: Collector

HO #4: ELEN 251 - Bipolar Transistors

5. Form Base region

mask #4: Base

6. Form Emitter region

mask #5: Emitter

HO #4: ELEN 251 - Bipolar Transistors

mask #6: Contact

HO #4: ELEN 251 - Bipolar Transistors

NPN-BJT: Active Region Doping Profile

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

HO #4: ELEN 251 - Bipolar Transistors

NPN-BJT: A Typical Layout

HO #4: ELEN 251 - Bipolar Transistors

B. Basic Features of IC BJT Structures

this built-in -field is set

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

mobile carriers attempt

mobile carriers pulled by the -filed (drift) of fixed ionized donors

The base region is nonuniformly

-field is obtained from: diffusion = drift

Basic Features of IC BJT Structures

HO #4: ELEN 251 - Bipolar Transistors

C. Basic BJT Operation

In a typical npn-BJT operation:

HO #4: ELEN 251 - Bipolar Transistors

HO #4: ELEN 251 - Bipolar Transistors

Basic Operation - Derivation of Currents

or, Jp hole current density in the base 0

For uniformly doped base, dp/dx = 0,x = 0 and the e

HO #4: ELEN 251 - Bipolar Transistors

Basic Operation - Derivation of Currents

Substituting the expression for aiding -field, x from (2) in (3)

HO #4: ELEN 251 - Bipolar Transistors

Basic Operation - Derivation of Currents

In (6) Jn is pulled outside the assuming no recombination of

HO #4: ELEN 251 - Bipolar Transistors

pn-Product at the Depletion Edge

pno # holes in neutral N-region

ppo # holes in P region NA

Built in - potential of pn - junction: bi

Then, we can show that : nno = n p o e

HO #4: ELEN 251 - Bipolar Transistors

pn-Product at the Depletion Edge

We now assume low-level injection i.e. the injected carrier

HO #4: ELEN 251 - Bipolar Transistors

pn-Product at the Depletion Edge

We know , n po = ni2 / p po = ni2 / p p ; and pno = ni2 / nno = ni2 / nn

HO #4: ELEN 251 - Bipolar Transistors

Basic Operation - Derivation of Currents

HO #4: ELEN 251 - Bipolar Transistors

Basic Operation - Base Gummel Number

This is an extremely important result. Note that: