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222

TRANSACTIONS

ON MICROWAVE

Case 3: This is the special case when


6,= i%. The resulting
valid approximations

THEORY

I kL kcl <<1 with

formulas
are much simpler and are
for many microstrip
couplers.
In

particular,
it is found that the coupling
nearly that of Case 1, while the directivity

variation
is very
and input reflec-

tion coefficient are directly proportional


to \ Al = I kLkcl.
It should be noted that Brenner [8] has derived equations
for this case in terms of the even- and odd-mode parameters
which

are applicable

at midband.

Case 4: This case gives the equations


coupler

when

When

all ports

the reflection

for the symmetrical

except the input

coefficients

are not matched.

are small, as is usually

the

case, the terms involving products of reflection coefficients


can be neglected. In this case the coupling variation is essentially that of Case 1, while the directivity
and input reflection coefficient are directly proportional
to PI(Z) and P2(0).
Equations for the unsymmetrical
coupler with mismatched
terminations
have also been derived but are not presented
for lack of space.
CONCLUSIONS

In conclusion,

the results presented

useful in explaining

the behavior

Characteristics
Lines-II:
MARK

here should

of coupled

be very

microstrip

lines

of Coupled
Evaluation

K. KRAGE,

STUDENT

TECHNIQUES,

neous media.
The remaining problem
parameters for a particular
Part II, which

IEEE, AND

of coupled lines. Several

geometries are considered and the inductive and capacitive coupling cothe effective

dielectric

constant,

and the characteristic

im-

pedance for variows dimensions of these geometries are presented.

INTRODUCTION
HE

DETERMINATION

of coupled
T
dium

types

of micro

surrounding

the coupled
dicts

that

equal

phase

lines

strip

for

circuits.

coupled

velocities.

of Fig.
lines
This

the

of several

dielectric

is inhomogeneous,

1, the quasi-TEM
can

of a pair

the design

When

the conductors

microstrip
the

of the parameters

is necessary

support

condition

two

theory
waves

leads to finite

meas for
preof un-

isolation

Manuscript
received July 17, 1969; revised November 11, 1969.
This work was supported by a grant from Omni-Spectra, Inc., Farmington, Mich.
The authors are with the Electron Physics Laboratory, Department
of Electrical Engineering, University of Michigan, Ann Arbor, Mich,

inhomoge-

paper in this issue.

Coupled

Mode

and Parametric

Electronics.

New

York: Wiley, 1960, ch. 1.


[6] J. E. Adair and G. I. Haddad, Coupled-mode
analysis of nonTrans.
Microwave
uniform
coupled transmission
lines, IEEE
Theory and Techniques, vol. MTT-17, pp. 74&752, October 1969.
[7] E. M. T. Jones and J. T. Bolljahn, Coupled-strip-transmissionTheory
line filters and directional couplers, IRE Tran~. Microwave
and Techniques, vol. MTT-4, pp. 7581, April 1956.

[8] H. E. Brenner, Perturbations of the critical parameters of quarterTheory and


wave directional couplers, IEEE Trans. Microwave
Techniques
(Correspondence), vol. MTT-15, pp. 384-385, June
1967.

GEORGE

in directional
the geometry

etlicients,

is a companion

[5] W. H. Louisell,

Part

the characteristics

utilizing

1970

Waves on Transmission
Systems.
New
[1] L. V. Bewley, Traveling
York: Wiley, 1933, ch. 6.
Lines and Networks.
New York:
[2] W. C. Johnson, Transmission
McGraw-Hill,
1950, ch. 1.
[3] M. Caulton et at., Measurements on the properties of microstrip
transmission lines for microwave integrated circuits, RCA Reu.,
vol. 27, pp. 37739 1, September 1966.
[4] B. M. Oliver, Directional
electromagnetic couplers, Proc. IRE,
vol. 42, pp. 16861692, November 1954.

ity separation

determining

NO. 4, APRIL

is the evaluation
of the various
geometry. This is considered in

Transmission

of Coupled-Line

MEMBER,

MTT-18,

REFERENCES

rnicrostrip lines which are reqnired in the equations and results derived in
I for

VOL.

and should aid in the design of couplers

Microstrip

part of the paper presents the parameters of conpled

AbstractThis

AND

Parameters

I. HADDAD,

couplers

which

SENIOR

IEEE

becomes worse as the veloc-

increases. Another

problem

of Fig. 1 is that the interstrip

made prohibitively

MEMBER,

small to achieve tight

associated

with

spacing must be
coupling.

These

problems can be overcome, to a great extent, by employing


a dielectric overlay, as in Figs. 2 and 3, or an air gap, as in
Fig. 4, to equalize the phase velocities. Also, it has recently
been reported that a floating potential
strip on top of the
dielectric overlay, as shown in Fig. 3, can be used to achieve
tight coupling with reasonable interstrip
spacing [1].
Several methods may be used to obtain the parameters of
the coupled lines, and a brief discussion and comparison
of
these methods has been given by Kammler
[2]. In this paper
a variational
method [3], which gives an upper bound value
of capacitance,
is used to determine
the coupled-mode
parameters for the geometries of Figs. 1 through 4. This
method

has been chosen as a reasonable

compromise

be-

tween speed and accuracy. Numerical


results are presented
and the effects of the geometry on coupling and isolation are
examined

in detail.

KRAGE

AND

HADDAD

: COUPLED

MICROSTRIP

TRANSMISSION

LINES-II

223

co

////
, %.co
.
///
/
/
. . . . .. . . ..... . .......{..

/ ..!..<,<.!.<

. . . . ..
\

. .

Fig. 1. Coupled microstrip lines.


l-drM=-d2-lwk

Fig.

4.

Microstrip

TT

coupler configuration
with
dielectric and ground plane.

NUMERICAL

EVALUATION

COUPLED-MODE

air region

between

OF THB

PARAMETERS

S3

A numerical

N
tN////////////////A

Y-+I

evaluation

evaluated

in terms

figurations,

the quasi-TEM
evaluated
\

assumption

coupler configuration

with dielectric

on top.

for the filled

to

define

velocity,

are
I

L and the empty structure

(1)

wo~o

structure,

and o

The capacitive

C~(~,), are evaluated

region

region. The filled and unfilled

parameters

even and odd modes. The indexes

t= C,coin the dielectric-tilled

con-

(e.g., c,== 1 in region

refer to the even and odd modes, respectively.


parameters

field

to coupled-

given below. Under

the inductive
structure

Lecoe(l)

for both
Microstrip

the relations

for the unfilled

~Fig. 2.

through

of Fig. 1) so that the inductance


capacitance C(1) are related by

parameters

of the even- and odd-mode

and these values are then converted

mode parameters

of the coupled-mode

has been carried out for the geometries shown in Figs. 1


through 4. The inductive and capacitive parameters are first

for

and e= co in the unfilled

structure capacitances

are used

an effective dielectric
constant,
c,O,W
and
for the even and odd modes as follows:
vPOe,

phase

CO(G)
~7% =

53

(2)
co(l)

and
c

Vpos=

52

sl=h
1

~+.l-d2-l.l-

Overlay coupled microstrip

(3)

4%

where c is the velocity of light in vacuum.


The even- and odd-mode parameters are related to the
coupled-mode
parameters by the following equations:
L1.

L.
Fig. 3.

1
1
+
c.(l)
[ co(l)

[ c.(l)

==

configuration.
c,

*[co(e,)

1
co(l)
+

C.(G)],

1
1

(4)

(5)

(6)

IEEE

224

TRANSACTIONS

ON MICROWAVE

and

From

*[co(e,)

the above relations,

C.(G)]

the characteristic

impedance

TECHNIQUES,

s/)/d~

~m cosh mm(y

s~)dl]

vI$/dl,

APRIL

1970

m=1

(7)

AND

[Cm sinh trm(y

q% =
cm =

THEORY

sin mm/d,

is

given by

s/)/d2

0= 4E=[%G%I

,8,

-sin m~(x

dl.4oeo

[co(l) c@(l)]/

where s1 = sI+ t/2,

C.(G)+ co(%)

(9)

+ co(l)

defines an effective dielectric constant for the structure.


coupling coefficients k~ and kc are defined by
= co(l)

co(l)

LI

(15)

d, w)/d,,

V1 = Vz in the even mode, and V1 = V2

The

A variational

c.(l)

(lo)

+ c.(l)

method,

which uses the stationary

property

of the stored electric energy, and continuity


of potential
is
used to evaluate the coefficients in the potential expansions.
This method, in general, results in an upper bound value for
the capacitance

~L = &

in the cdd mode.

L&.eff

[ c.(l)

dl w)/d2.

(V, V,) (z

+ V,+

The quantity

s/)/dz]

+Fm cosh mr(y

which

approaches

the true value of capaci-

tance as more terms are included

in the Fourier

expansions

of the potentials.
The stored energy in region I is given by

and

kc=$=
The effective

propagation

we,= ~~ ~, [(E.,)2 +

co(%) CO(4
CO(G)
+ Ce(e,)
constant

terms of the above quantities

(11)

Ss ,

where

(Eyi)]dx

dy,

(16)

_&:=!!&,

~. can be expressed in

ax

as

(12)

For k~ = kc,

and Ri is the region

of integration.

The total capacitance

of the structure

(13)

2we
c=

THEORETICAL

The geometry
method.

of Fig,

Although

1 will

finite

analysis, numerical

be analyzed

thickness

was

to illustrate
included

the

in

this
will

not be presented here. Fig. 1 is divided into four separate


regions, and the structure is assumed symmetric about the
line x= b/2 with potentials @= VI, 4= Vt, and IP= O on the
left and right strips and the outer conducting walls, respectively. For quasi-TEM
mode propagation
the field configuration in each of the four regions can be obtained from a solution of Laplaces equation which is given by
(14)

i=l,2,3,4.

Assuming perfect metallic boundaries, the even- and oddmode potentials in the four regions are given by
m

A. sinh nry/b

sin n7rx/b,

.=1

.
42 = ~
??==1

&

sinh nr(a

V2

(17)

ANALYSIS

results for other than zero thickness

V2@i = O for

is then given by

y)/b

sin n~x/b,

where

w. = :

W.i

i= 1

and V is the potential


of a strip. This value of capacitance
gives twice the even- or odd-mode capacitance of a single
strip to ground.
Using (15) through (17), the stored energy can be evaluated
in terms of the coefficients An, B., Cm, D~, Em, and F~. Using
continuity

of potential

at y = SI and y= s1+ t,one can write

Am and B., and hence W., in terms of Cm, D~, Em, and F~.
By the stationary property of the energy, we must have

awe
=0,
acm

awe
=0,
i7D.

dwe

awe

=0,

= O
aFm

aEm

(18)

form=
1,2,3,
. . . .
The above relations will generate four sets of equations,
each set consisting of an infinite number of simultaneous
linear inhomogeneous
equations. These equations have been

KRAGE

AND

programmed

HADDAD:

COUPLED

for solution

MICROSTRIP

on a digital

are discussed in the following

TRANSMISSION

computer.

RESULTS

The analysis of the previous


section may be used to
include the effects of the topwall and the sidewalls of Fig. 1.
However,
for the results presented here, the microstrip
primary

without

interest.

can be normalized

a topwall

or sidewalls

Since all of the dimensions

will

may be eliminated

0
~eo.05
/-- ----

-J

0.4

,2

by choosing

promise

must be effected between the number

of Fig.

region III

function

Fig, 5.

for the potential.

or odd-mode

capacitance

for a particular

In order to determine
(with

dJh>

the error involved

----

-.

is on

0.2

-----

.-.--0.4

-.
_7.

0.6
-. 0.8
-- _

.,_

0.4

-
_

..
-

_.

=5

-._,_

-_

..

in re-

-,__
--0.1

-,

\_

.,_

+-..M
12

0.8

2.0

1,6

wlh

360 computer.
with

2.0

coupling coefficients versus w/h for Figs. 1,2, and 4


configurations (t/h = O, s.Jh = m).

\:___

0,2 z.

in

using this method

3), the results were compared

1.0

-~

A* :

the even-

configuration

the order of six to eight seconds on an IBM

For the

and five terms were used in the expansion


time necessary to compute

0,

2.0

Inductive

of terms, and

1, 25 terms were used in the expansion

gion IV. The computer

an aca com-

When the strip thickness is neglected, regions HI and IV,


reduce to the line y = h, and the Fourier expansions along this
geometry

0,2

---04

-_
.-.
__0,8

wlh

hence, computer time, and the effect of the sidewalls. For


the results presented here a ratio of sJb was chosen to ensure
that the ratio of all/his always greater than three.

line are used as a trial

-o. i

.-,

~___L

of terms is neces-

sary in the Fourier expansions of (15) to maintain


curate representation
of the potential.
Therefore,

,-

..

__

_.

_,--.
-

[:
..
._,
I _. _...

s2/b

and w/b to decrease.

of sJb will cause the ratios dJb

As dJb and w/b decrease, a larger number

.-.

in the equations

equal to infinity,
and the effect of the sidewalls may be
made arbitrarily
small by choosing sJb sufficiently small.
For a particular
ratio of dJh and w/h, a decrease in the
ratio

._, _

..

the

---

----

.-. . ,-

be of

to b (the spacing between sidewalls),

effect of the topwall

225

The results

sections.

NUMERICAL

configuration

LINES-II

Fig. 6.

Capacitive

coupling

versus
w/h for
t/h = O, sJh = co).

coefficient

configuration (c,=9.6,

the infinite

Fig. 1

dJh data of Bryant and Weiss [4]. The error was found to
be one to three percent for the odd mode and two to four
percent for the even mode. Since the results of Bryant and
Weiss are accurate to better than one percent, their data were
used to compute
through
However,

the coupled-mode

9 in the range

0.2 SdJh

parameters
S 1 for

the data for dJh = 0.05,0.1,

of Figs.

e,= 9.6 and

0.4

16.

and 2 were computed

.1
\\

#
-

from the method presented in this paper.


The capacitive coupling curves of Figs. 6 and 7 show that

-.

0.2 ___
.

the coupling coefficients are nearly identical for e,= 9.6 and
e,= 16. Comparison
of kL with kc indicates that the inductive coupling, in general, is larger than the capacitive coupling for this geometry. Since

._

---

. -._._,_-,

~-~u
.

0.4

d21h=0.2

--

-._,

.
----.
--=

0.8

1,2

1.6

0.8

I.0

2,0

w/h

Fig. 7.

~ _

1~

-.-.-,

c.(l)

Capacitive coupling coefficient versus w/h for Fig. 1


configuration (e= 16, t/h = O, sJh = a>).

co(l)
(19)
c.(l)

the statement that kL is greater than kc is equivalent


saying that the even-mode effective dielectric constant

co(l)

larger

kL =
l+

than the odd-mode

effective

dielectric

constant.

to
is
The

difference between kL and kc does not change appreciably


as dJh and w/h are varied, Therefore,
the approximate

and

expression

~ _ erece(l)

for directivity,

it~ ?@

Eroco(l)

00
(21)

D=

(20)

kc =
Erec,(l)

which is given in Part I as

kL + kc sin 6%

1+
C,*co(l)

indicates

that

the directivity

will

improve

as kL+kc,

and

IEEE

226

TRANSACTIONS

ON MICROWAVE

THEORY

AND

TECHNIQUES,

APRIL

1970

hence as the coupling is increased. In particular,


the directivity for weak coupling will be quite poor, e.g., on the order

of 5 dB for a 20-dB coupler.


The capacitive and inductive

Er =16
tlh=O

/,H/--~

]\

coupling

coefficients

together

with the impedance and effective dielectric constant curves


can be easily used for coupler design. The first step in the

.<

~ --
1

design procedure is to select a value of dZ/h that gives the


approximate
desired coupling,
as given by kG(kL+kc)/2.

For a 10-dB coupler, k= 0.316 so that dJh&O.3


for c,= 9.6.
The next step is to choose a value of w/h that gives a char-

a2,

+
~

~8
5
w
>
C
b
;7
w

d,/h=O.8

acteristic

----

d:/h=l.O

d2/h=

d2/h=0.8

---

d2/h

show that, for dJhmO.3,

d2/h=0.6

d2/h=0.2

50 ohms

----

d2/h=0.4

d2/h=

k~ = 0.36 and kc= 0.26,

d2/h=0.2

d2/h=0,05

=0,4

0.1

IS
s2/h=a.I

-./.

er= 9,6

_.~

) ./.\

t/h=O

,/

/ /
.~..z-

./~/~y.~_

.-<<-.

0.6

__

//-<<..

~_.-

-<s--;

0.0

1.2

1.6

the characteristics
In an effort

This

value

of k is

to 0.28 and w/h to 0.89 to

1 kL2
d

~ kLk~

of a particular
to increase

to determine

coupler.

the coupling

and improve

the

of analysis is similar

to the method

previously

discussed and

will not be presented here.

ii
230 \\i,,.

OTHER COUPLED

\l\,\.\\,
\\.
\\\\\
j\i\
\, \\ ~

or k= 0.310.

for

are then

directivity
characteristics
of the microstrip
coupler, various
coupler configurations
have been investigated. The method

\,

t\

coefficients

The results given in Part I can then be employed

\\
I
\

coupling

curves

is required

where ho is the free-space wavelength at midband. For the


above dimensions Fig. 8 gives e,e~~
= 5.92, and 1=O.101 XO.

2.0

wlh

190 [

The

xl)
l=
44G

Effective dielectric constant versus w/h for Fig. 1configuration.

210

impedance

--

0.4

The

a value of w/h~O.9

so decrease dJh

~ -

250.

small,

&i*.

51

Fig. 8.

impedance.

of 50 ohms.

give kL%O.37, kcO.27,


or k= 0.32, and Z,= 50 ohms. The
length of the coupler is specified by ~01= T/2 at midband, or

_.-.

/<

slightly

impedance

--

d2/h =m

--

d2/h=l.0

d2/h=0.8

d2/h=0,6

with the microstrip


effective dielectric

than the even-mode

value,

phase velocities

GEOMETRIES

coupler
constant

of Fig. 1 is that
is always smaller

and this condition

gives rise to

d2/h=0.4

different

d2/h=0.2

equivalently,

d2/h=0.1

d2/h=0.05

odd-mode
effective dielectric
constant and thus kc is to
provide
an overlay of dielectric
material
on top of the
strips [1], as shown in Fig. 2, so that more of the odd-mode
field lines will reside in the dielectric. The results for the case

,\ \)\
\ Q.
\ \,NY

The problem
the odd-mode

MICROSTRIP

for the even and odd modes or,

kL is greater than kc. One way to increase the

with SS= @ are given in Figs. 10 through


Initially,
increased,
structure

15.

one might expect that, as the overlay thickness is


kc should
is filled,

approach

kL and,

when

the entire

kc should equal kL.

As the results show, this is not the case. In particular,


the
values of kc plotted in Fig. 10 for S2= SI are greater than the
corresponding
values of kL (Fig. 4). This implies that the
odd-mode effective dielectric constant exceeds the even-mode
value at some S2less than sl, and will remain larger at larger
values of S2until the entire structure is filled.

o.I

0.3

0.5

07

0.9

1.1

1.3

WI h

1,5

In order to determine the value of s.Jh at which kL = kc, an


additional set of data with s2/h = 0.5 was used, and the variation of c,,~~and kc as a function
and 13 for w/h=

Fig. 9.

<e,,if Zo versus w/h for Figs. 1, 2, and 4 configurations


(t/h=O,

s,/h = m ).

of sJh are given in Figs. 12

0.6. The dotted line in Fig. 13 indicates

the

points at which kc= kL. Note that the dielectric layer must
be made thicker at weaker coupling values to maintain kc
equal to kL.

KRAGE

AND

HADDAD

--

: COUPLED

MICROSTRIF

TRANSMISSION

-.\-

0.6
----

--

._

d2/h=0,1

--

~--

---

-_
/>7
0.4

_-.-.
___
___
,,0I
r

....

..

,., ,
- *,-

__
. . . .. .

1,0

,_.

..

,-

.. . .

. . . . . ..

I
0.2

0,4

- 2,0
I

0.6

0.8

1.0

s2/h

Fig. 10. Capacitive coupling coefficient versus w/11 for Fig. 2


configuration
(e, = 10, sz/k = 1, s3/k = co, t/k= 0).

Fig. 13. Capacitive coupling coefficient versus sx/h for Fig. 2


configuration (Q= 10, w/h =0.6, st/h = @, f/h= O).

i=zr
d2/h

.-

. .....

..

--

,2

0,5

-/~-

10+

___

..

d2/h=0.1
______

--

. ..

<:

0.2

>,y

0,4

227

LINES-II

10
s2/h=l

=2.0

8
:
&
UJ

I
~
u

,~
o

0.4

0.8

1.2

(.6
6

w/h

Fig. 11. Effective dielectric constant versus w/11 for Fig. 2


configuration
(6= 10, .rz/k = 1, s3/It = m, t/~= O).

,~
2

Id
slh

Fig. 14.

10

d2/h=

0.1

d2/h=

0.2

d21h=0.5

--

d,/h=

Effective dielectric constant versus s//s for Fig. 2


configuration (e, = 10, t/h= O, dJh = 0.4, w/h= 0.4).

1.0

kc

0.4

.x

kL

s2/h=

---

0.3

---

_-----o,

--

,~

0..2

0.4

0.8

1.2

1.6

slh

w/h

Fig. 15.
Fig.

12. Effective
configuration

dielectric constant versus sz/h for Fig. 2


(e= 10, w/~ =0.6 s~/~ = m, t/~= 0.

Coupling coefficient
(,,= 10, t/h=O,

versus s/h for Fig. 2 configuration


d,/h =0.4, w/h= 0.4).

have also been

increase the odd-mode


capacitance without
substantially
increasing the even-mode capacitance. In the odd mode the

investigated for this structure, and the results are given in


Figs. 14 and 15. The results are exactly what one expects,

floating conductor must assume a zero potential since it is


symmetrically
located above the strips. The odd-mode capac-

that is, the closer the topwall

itance will then be increased by the capacitance to this conductor. In the even mode the floating potential will be close

The effects of the proximity

the coupling

and the lower

of a topwall

is to the microstrip,
the effective

dielectric

the lower
constant,

but the change is very small over the range considered.


Note that k~ decreases faster than kc as the topwall to
strip spacing decreases, so that kc can also be made equal to
k~ by adjusting the topwall spacing.
A configuration
which can lead to tight coupling with high
directivity
floating

is shown in Fig. 3. This configuration


potential

conductor

above the microstrip

employs

lines to

to the potential of the microstrip if S2 is sufficiently small, so


that the even-mode capacitance should not be changed substantially by the presence of the floating potential conductor.
Numerical
results for this case have been computed but are
not presented here for lack of space.
In addition to the geometry of Fig. 2, kL and kc can be
made equal with the configuration
of Fig. 4. ][n this case, a

IEEE

228

TRANSACTIONS

ON MICROWAVE

THEORY

TECHNIQUES,

APRIL

1970

,/

0,6

3.5

AND

J
/
t

,.,~

0.2

0.4

0,8

1.2

\
r

/hc=kL

1,6

wlh

Fig. 16. Effective dielectric constant versus w/h for Fig. 4 configuration
(,,, = 1, e,,= 10, s,/h=O.25, sz/h=O.75, f/k=O, ss/h= ~).

kc=kL

0.2

0,4

0.6

0,8

1,0

S,/h

Fig. 18.

.-

---

----

0.6

d /h=O.l

---&

-_

Capacitive coupling coefficient versus .sJh for Fig. 4 configuration (e,, =1, ~,= 10, w/k =1, t/h = O, ss/h = co).

--#

--

reff VS.
sl/h

0.2

- -

0.2

--

I .0

d2/h=0.1

d2/h=0.2

d2/h=0.5

--

d2/h=l.0

0.4

0.8

1.2

1.6

w/h

Fig. 17. Capacitive coupling coefficient versus w/h for Fig. 4 configurasJh=O.75,
t/h=O,
sJh=
m).
tion (c,, = 1, e,, = 10, s,/h=O.25,

region

of air (e,l = 1) separates the dielectric

strips and the ground

plane.

reduces to that of Fig.

When

supporting

=4
~.
w

the

sl/h = O, this geometry

1, where kL is greater than kc. For

small values of sl/h, the effect of the air gap is to reduce the

even-mode effective dielectric constant more than the oddmode value, and therefore to increase kc. The results for
sl/h = 0.25 are given in Figs. 16 and 17 and the variations of
kc and e,.,, as a function
of sl/h for w/h= 1 are given in
Figs. 18 and 19. As is shown in Fig. 18, the value of kc can

11

0.2

0.4

0.6

0.8

be made to exceed kL, and the line of kL = kc as a function


sl/h is given. Thus couplers with
realized with this configuration.
For tight coupling
and may be difficult

high

directivity

of

can be

and kL = kc, the air gap spacing is small


to control

values of h. This problem


higher dielectric constant
Some numerical results for
been computed, but are not

experimentally

for

small

can be reduced by employing


a
material
in the air-gap region.
teflon (c,= 2. 1) in region I have
presented here for lack of space.

A comparison
of these results with the previous case indicates that the teflon thickness required for kL = kc is nearly
double the value obtained
SUMMARY

for air.
AND CONCLUSIONS

parameters and the evenIn this paper the coupled-mode


and odd-mode capacitances for a pair of coupled lines were
related, and a variational
method for analyzing the coupled
microstrip
geometry was presented. Numerical
results for

.
1.0

sl/h

Fig. 19. Effective diekctric constant versus s,/h for Fig. 4


configuration
(c,, =1, e,, = 10, w/k= 1, t/h = O, s8/h = m),

several

microstrip

mode form,

geometries

were presented

in coupled-

and these resuhs can be used in conjunction

the analysis of Part I in the design of microstrip

with

circuits.

REFERENCES
[1] K. C. Welters, P. L. Clar, and C. W. Stiles, Analysis and experimental evaluation of distributed overlay structures in microwave
integrated circuits~ 1968 G-MTT Symp. Dig., pp. 123-130.
[2] D. W. Kamrnler, Calculation
of characteristic admittances and
Trans.
coupling coefficients for strip transmission lines, IEEE
Microwave
Theory
and Techniques,
vol. MTT-16,
pp. 925-937,
November 1968.
New York: McGraw[3] R. E. Collin, Field Theory of Guided Waves.
Hill, 1960, pp. 155-159.
[4] T. G. Bryant and J. A. Weiss, Parameters of microstrip transmission lines and of coupled pairs of microstrip lines, IEEE Trans.
Microwave
Theory and Techniques,
vol. MTT-16,
pp. 1021-1027,
December 1968.

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