Professional Documents
Culture Documents
Bipolar-Junction Transistor(BJT) consist of two backto-back P-N junctions manufactured as a single piece of
semiconductor crystal. These two junctions give rise to three
main regions namely Emitter, Collector, and Base.
Common Emitter Amplifier(CE) A BJT amplifier,
where the input signal is injected to the Base-Emitter junction
whereas the output is taken to the Collector.
Amplifier an electronic device that increases the
power of a signal.
Base lightly-doped part of the BJT.
Emitter- heavily-doped part of the BJT compared to the
other regions.
Collector collects majority charge carriers coming
from the Emitter passing through the Base.
I.
INTRODUCTION
A. Components
1. Resistors : 10k(1) ; 3.9k(2) ; 4.7k(1) (all in
Watts)
2. Capacitors : 1F(2) ; 220F (1)
3. Transistor : 2N3904 NPN Transistor (2)
B. VOM
C. NI ELVIS II Workstation
D. NI ELVIS Prototyping Board
III.
PROCEDURE
V.
A. Abbreviations and Acronyms
a.1) BJT- Bipolar Junction Transistor
a.2) CE Common Emitter
a.3) AC- Alternating Current
a.4) DC Direct Current
a.5) VOM Volt-Ohn Meter or Multimeter
a.6) NI National Instruments
B. Units
C. Equations
As for the Common Emitter Voltage-Divider Bias
Configuration, it usually uses the Thevenin equivalent and
Kirchhoffs Voltage and Current Laws for both DC and AC
analysis.
The Percentage Error is also used for computing the
difference between the true and experimented values.
%Error = (|T.V.-M.V.|/T.V.) x 100
IV.
Measured Value
Expected Value
%Error
Vb
5.0409 V
4.7737 V
5.5973%
Vc
11.3300 V
10.9532 V
3.4400%
Ve
4.3694 V
4.0737 V
7.2587%
Vce
6.9630 V
6.8795 V
1.2137%
Vbe
0.6725 V
0.7 V
4.0892%
Av
-168.0541
-156.6755 V
7.2625%
(1)
VI.
OBSERVATIONS
CIRCUIT DIAGRAM
[4]
[5]