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Market size
position of silicon in an
industrial playground in
20102020 GaN RF device market size
evolution (nominal scenario)
which a power amplifier
(PA) market of $1600m+
is forecasted for 2020.
Today, several firms
(i.e. Cree, Triquint/RFMD,
$163m
Sumitomo, RFHIC,
MACOM/Nitronex,
Mitsubishi, NXP,
Microsemi) have GaN
device portfolios covering
a wide range of applications. GaN has pro2010
2011
2012
2013 2014
2015
2016
2017
2018
2019
2020
gressed significantly
devices; fewer devices needed to cover the entire
over the last five years; several thousand devices have
frequency spectrum; and cost savings at the developbeen developed and implemented in applications
ment stage);
such as radar, CATV, space applications with satellite
higher polarization voltage (lower current level for
communication, counter-IED jammers, CATV modules,
the same power output; and fewer losses from the
3G/4G base-stations, WIMAX/LTE PAs and generalJoule effect, leading to cost savings in thermal
purpose applications.
management); and
In our nominal case, RF GaN-based devices could
higher junction temperature (more robust devices,
reach more than 18% of the overall RF device market by
leading to improved expected lifetime and mean time to
2020 (i.e. a 9% CAGR [compound annual growth rate]
failure [MTTF]; and reduced cooling system demands,
from 2013-2020), says Yole.
leading to cost savings at the system level [BTS]).
GaN devices offer added values over incumbent
The report evaluates such added value, in addition to
Si-LDMOS and GaAs HEMT
the production cost of GaN-based devices today and
Yole notes that GaN offers better power capability and
within 5 years. The production cost impact at the syslinearity compared with commonly used pure silicon or
tem level of the use of RF GaN devices is also analysed
GaAs-based technologies, enabling higher performance
in detail, in order to understand the added costs at the
and lower overall system costs, such as:
device level and the cost savings at the system and
higher efficiency (lower operating costs; improved
module levels.
module power density and size; and reduced cost of
ownership);
www.i-micronews.com/reports/RF-GaN-MarketAnalysis-Applications-Players-Devices/3/438
higher bandwidth and linearity (more versatile
High power
High frequency
Linearity
Highly requested
11
9.5
8.5
8
7
5.5
SatCom
Defense
3G/4G BTS
WiMAX
LTE
V-Sat
CATV
Little interest
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