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Amplifier Technologies
D. A. Howe and A. Hati
National Institute of Standards & Technology (NIST), Boulder, CO, USA
OUTLINE OF TALK
noise-free amp
(unity gain)
S(fm)
Sa(fm)
resonator
at fo, with
QL
Phase stabilization of an
oscillator with noise
sources and a resonator
with loaded Q, QL.
19833
APROPOS_SPAWAR_04
19057
APROPOS_2003
19059
APROPOS_2003
VBB
VS
RL
Rin
SIGe
HBTs with cut-off frequency of 350 GHz, by Rieh, J.S., et al., International Electron Devices Meeting, pp.
771-774, December 2002.
19706
Archive# 19706
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MSH-6133401, Pin=+2.57dBm
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L(f) dBc/Hz
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10000
Frequency (Hz)
100000
1000000
10000000
vo 2 S ( f )
OSC
S ( f ) = 4Q 2 f 2
S ( f )
vo
f <
2Q
vo
f >
2Q
f = v vo
Fourier frequency (offset frequency)
Optical Fiber
Laser
RF
Output
Optical
Modulator
RF
Coupler
RF
Filter
RF
Amplifier
Photodetector
c
nL
Opto-Electronic Oscillator
OEO has very high Q and frequency agility
over a wide range
RF output
RF
Coupler
RF
Filter
RF output
Optical Fiber
Optical
Modulator
Laser
RF
Coupler
11
11
Single loop
OEO
RF
Amplifier
Laser
Optical
Modulator
Photodetector
Q
Q == 10
10 in
in
optical
systems
optical systems
And
And Low
Low ggsensitivity
sensitivity
RF
filter
RF
Amplifier
Optical Fiber
Fiber
splitter
JPLs
Dual loop
OEO
Photodetector1
RF
Combiner
Photodetector 2
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Long fiber
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Short fiber
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100
1000
10000
100000
1000000
10000000
Comparison
The Multi-loop OEO uses
energy competition between
carrier mode and spur modes
to suppress spurs.
Long fiber
Short fiber
Master OEO
Slave
OEO
Normalized Power
10
-1
10
-2
10
-3
10
-4
10
-5
10
fo
fn=fo+nfr
f2n=fo+2nfr
x2
I(f)
Femtosecond Laser +
Microstructure Fiber
fm
PLL 2
fb
fr
Clock Output
fr = fHg m
(m~106)
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1
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Frequency (Hz)
100000
1000000
10000000
The End
Conclusion
Comparison of different classes of microwave amplifiers and oscillators at X-band
K. Ko, K. Lee, A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit
Topologies for RF and Microwave Applications, IEEE Journal of Solid State Circuits, Vol. 31, no. 8,
1996.
H. Ainspan,M Soyuer, JO Plouchart, J. Burghartz, A 6.25 GHz Low DC Power Low-Noise Amplifier
in SiGe, IEEE Custom Integrated Circuits Conference, 1997.
M. Soyuer,A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology, IEEE Radio Frequency
Integrated Circuits Symposium 1997.
R. Gotzfried, F. Beisswanger, S. Gerlach, A. Schuppen, H. Dietrich, U. Seiler, K.-H. Bach and J.
Albers, RFICs for Mobile Communication Systems Using SiGe Bipolar Technology, IEEE
Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.
D.Y.C. Lie, X. Yuan, L.E. Larson, Y.H. Wang, A. Senior, J. Mecke, RF-SoC: low-power single-chip
radio design using Si/SiGe BiCMOS technology, Proceedings of the 3rd International Microwave
and Millimeter Wave Technology, pp. 30-37, August 2002.
S. Muthukrishnan, ESD protected SiGe HBT RFIC Power Amplifiers Thesis: Virginia Polytechnic
Institute and State University, Blacksburg, Va, March 2005.
J.S. Rieh, B. Jagannathan, H. Chen, K.T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F.
Golan, D. Greenberg, S.J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K.K.
Vaed, R. Volang, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, SIGe HBTs with cut-off
frequency of 350GHz, International Electron Devices Meeting, pp. 771-774, December 2002.
N. Shiramizu, T. Masuda, M. Tanabe, K. Washio, A 3-10 GHz bandwidth low-noise and low-power
amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology, Central
Res. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequency integrated
Circuits (RFIC) Symposium, 12-14 June, 2005.
Conclusion
Comparison of different classes of microwave amplifiers and oscillators at X-band
A Comparative Study on the Various Monolithic Low Noise Amplifier Circuit Topologies for RF and
Microwave Applications, by Ko and Lee, IEEE Journal of Solid State Circuits, Vol. 31, no. 8, 1996.
A 6.25 GHz Low DC Power Low-Noise Amplifier in SiGe, by Ainspan, et. al., IEEE Custom
Integrated Circuits Conference, 1997.
A 5.8GHz 1V Low-Noise Amplifier in SiGe Bipolar Technology, by Soyuer, IEEE Radio Frequency
Integrated Circuits Symposium 1997.
RFICs for Mobile Communication Systems Using SiGe Bipolar Technology, by Gotzfried et. al.,
IEEE Transactions on Microwave Theory and Techniques, Vol. 46, no. 5, 1998.
RF-SoC: low-power single-chip radio design using Si/SiGe BiCMOS technology, by Lie, D.Y.C.,
Yuan, X., Larson, L.E., Wang, Y.H., Senior, A., Mecke, J., Proceedings of the 3rd International
Microwave and Millimeter Wave Technology, pp. 30-37, August 2002.
ESD protected SiGe HBT RFIC Power Amplifiers by Muthukrishnan, S., Thesis: Virginia
Polytechnic Institute and State University, Blacksburg, Va, March 2005.
SIGe HBTs with cut-off frequency of 350GHz, by Rieh, J.S., Jagannathan, B., Chen, H.,
Schonenberg, K.T., Angell, D., Chinthakindi, A., Florkey, J., Golan, F., Greenberg, D., Jeng, S.J.,
Khater, M., Pagette, F., Schnabel, C., Smith, P., Stricker, A., Vaed, K.k Volang, R., Ahlgren, D.,
Freeman, G., Stein, K., and Subbanna, S., International Electron Devices Meeting, pp. 771-774,
December 2002.
A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in
0.25- /spl mu/m SiGe BiCMOS technology, Shiramizu, N. Masuda, T. Tanabe, M. Washio,
K. Central Res. Lab., Hitachi Ltd., Tokyo, Japan; This paper appears in: IEEE Radio Frequency
integrated Circuits (RFIC) Symposium, 12-14 June, 2005.
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1
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Frequency (Hz)
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Microstructure
Optical Fiber
532 nm
Ti:Sapphire
Gain
GigaOptics laser, OFS fiber
dB below maximum
0
Pump
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600
800
1000
1200
wavelength (nm)
H H0e
Oscillators
noise
2Q
f
vo 2 S ( f )
OSC
S ( f ) = 4Q 2 f 2
S ( f )
vo
2Q
vo
f >
2Q
f <
A = A0 e
oscillation condition:
A gH = 1
Leesons model*
f = v vo
Fourier frequency (offset frequency)
10
10
-8
-9
v
y =
v0
-10
10
y()
-1
-11
10
-1/2
-12
10
1/2
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10
-14
10
-15
10
0.1
10
100
[sec]
1000
10000
100000
New calculation
-20
Sx(f) =
=4
h f
0 f fh
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S( f )
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f 2
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f0
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1
10
100
1000
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Frequency Domain
Power Spectral Density
of phase fluctuations
y()
= 2
Noise type
White phase
Flicker phase
Flicker frequency
1/ 2
Allan Deviation of
fractional frequency fluctuations
Time Domain
gm V
RS
Re
C jc
Prev _ avail
Prev _ delv
C
Rb
B
Examining the circuit it is clear that virtually none of the signal at the output
port appears at the input port. C-B amplifier therefore offers excellent reverse
isolation.
[Hz-1]
(1)
K2
f c
log(f) (Hz)
noise-free amp
(unity gain)
[Hz-1]
Output PSD:
f 2
o
S i ( f m )
S o ( f m ) = 1 +
2QL f m
+
Si(fm)
LPF
fo
fr =
2QL
(2)
FkT/Pc
K2/ Pc
fc
fc '
log(fm) (Hz)
fc
1 + [Hz-1]
fm
(3)
2. Leesons Equation
Leesons equation for the Power Spectral Density of an
oscillator:
fc
FkT
1 + [Hz-1]
Si ( f m ) =
f 2
o
S i ( f m )
S o ( f m ) = 1 +
2QL f m
Pc
fo
fc
FkT
1 + 1 +
So ( f m ) =
Pc
f m 2QL f m
fm
[rad2/Hz]
fo
fc
FkT
1 + 1 +
S ( f m ) = S o ( f m ) =
Pc
f m 2QL f m
S [Hz-1]
[rad2/Hz]
1/f 3
1/f 2
S(fm)
FkT/2Pc
0 Hz
fc
fm
fr
fm[Hz]
fo
fc
FkT
1 + 1 +
S ( f m ) = S o ( f m ) =
Pc
f m 2QL f m
[rad2/Hz]
S ( f m ) = 2 L ( f m )
fr =
fo
2QL
fr
fc
FkT
1 + 1 + [dBc/Hz]
L( f m ) =
f m f m
2 Pc
L(fm)
[dBc/Hz
]
L(fm)
[dBc/Hz
1/f
1/f 2
1/f
fr
1/f 3
FkT/2Pc
fc
fm [Hz]
fr
fc
FkT
1 + 1 +
L( f m ) =
f m f m
2 Pc
FkT/2Pc
fc
fr
fm[Hz]
S ( f m ) = 2 L( f m ) [rad2/Hz]
SLCO Poseidon
OEO
Output coupling
Very Low
Moderate
Directional
coupler and
amplifier
Resonator Q
Moderate
60,000
High
190,000
Very High
1e9
Loop Power
High
1-10 Watts
Moderate
100's mW
Inherent Spurs
None
None
Many
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OEWave 16 Km Single Fiber
Low Noise QZ with Perfect Multiplier
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L(f)dBc/Hz
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Frequency (Hz)
100000
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Amplifier Comparison
L(f) dBc/Hz
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MSH-6135501,Pin=+2.57 dBm
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-90
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1
10
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Frequency (Hz)
100000
1000000
10000000
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L(f) dBc/Hz
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1
10
100
1000
10000
Frequency (Hz)
100000
1000000
10000000