CBSE CBSE Class 12 Physics Solved Model Paper Set 1

CBSE Class 12 Physics Solved Model Paper 2015
Model Paper 2015

Class: XII
Subject: Physics
(Set 1: Solved)
SECTION A
1. Depict the magnetic lines of force around a straight current carrying conductor.
Sol. The lines of force are in the form of concentric circles.
2. The refractive index of glass is 1.5. What is the velocity of light in glass?
Sol.
Speed of light in vacuum
Refractive index of glass
1.5
Speed of light in glass
Since, Speed of light in vacuum is 3 108 ms1.
3 108 ms 1
Speed of light in glass
2 108 ms 1
1.5
3. What is the condition for maximum potential in Van de graff generator?

Sol. In a Van de graff generator inorder to attain maximum potential, the hollow conducting shell
should be large and leakage of charge should be minimised by housing the generator in a steel
chamer filled with nitrogen or methane at high pressure.
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and much more.
4. Does incident photon essentially eject a photoelectron?

Sol. No, incident photon does not essentially eject a photoelectron. If the frequency of the incident
photon is less than the threshold frequency, there will be no emission of photoelectrons at all.
5. Calculate the bitrate for a signal which has a sampling rate of 10kHz and 8 quantisation levels
have been used.
Sol.
Let n be the number of bits per sample then, the number of quantisation level = 2
Since the number of quantisation level is 8,

2n 8
n3
or
We know,
Bit rate Sampling rate Number of bits per sample
10000 3
30, 000 bits/second
SECTION B
6. Why is it found experimentally difficult to detect neutrinos in nuclear -decay?
Sol. Neutrinos are uncharged particles with almost no mass also, they interact very weakly with
matter and are hard to detect. This is why; it is experimentally difficult to detect neutrinos in
nuclear -decay.
7. In a single slit diffraction experiment, the width of the slit of the slit is made double the original
width. How does this affect the size and intensity of the central diffraction band? Draw a plot of
the intensity distribution?
Sol. The width of the central maximum in the single slit diffraction experiment is:
and much more.
2 D 2 f
2x
a
a
When the width of the slit (a) is doubled, the size of the central diffraction band will become half.
An area of central diffraction band will become (1/4) Thea and hence its intensity would become 4
times. The plot of intensity distribution is shown in the figure below. The dotted line in the curve is
when the width of the slit is doubled.
8. A circular brass loop of radius a and resistance R is placed with its plane perpendicular to a
magnetic field, which varies with time as B Bo sin t . Obtain the expression for the induced
current in the loop.
Sol. Induced current,
Induced e.m.f. e
I
Resistance
R
d dt 1 d
o
BA
cos
0
R
R dt
ABo
Ad
cos t
Bo sin t
R dt
R
A Bo
I
cos t
R
9. Using Kirchhoff's rules, determine:

(i) The voltage drop across the unknown resistance R.
(ii) The current flowing through the arm EF in the circuit as shown.
and much more.
Sol.
The current distribution in the circuit is as shown.
By loop rule in AEFDA, we have

6 3x 1 4 0
3 x 3
x 1A
1 x 2A
Applying loop rule in EBCFE, we get
1+x R 3x 6 0
or
2R 3 6 0
2R 3
3
R
2
Voltage drop across R 1 x R
3
2 3 volt.
2
OR
With the help of a circuit diagram explain how the internal resistance of a cell can be determined
by using a potentiometer.
Sol.
and much more.
First K1 is inserted, K2 is not inserted let the balancing length be L1

E L1
Where E is the EMF of cell,
Now K2 is closed, let the balance point be L2.
V L2
From (i) & (ii) equation
E L1
=
V L2
Internal resistance of cell is given by
E
r 1 R
V
L1
r 1 R
L2
10. You are given a 2 F parallel plate capacitor. How would you establish an instantaneous
displacement current of 1 mA in the space between its plates?
Sol.
Here,
I D 1mA 103 A
6
C 2F 2 10 F
I D I say
d
CV
dt
dV
C
dt
Therefore,
dV I D
103
500 V/s
6
dt
C 2 10
and much more.
Therefore, applying a varying potential difference of 500 V/s would produce a displacement
current of desired value.
SECTION C
11. A prism is made of glass of unknown refractive index. A parallel beam of light is incident on a
face of the prism. By rotating the prism, the minimum angle of deviation is measured to be 400.
What is the refractive index of the prism? If the prism is placed in water ( = 1.33), predict the
0
new angle of minimum deviation of the parallel beam. The refracting angle of prism is 60 .
Sol.
Here,
m 400
A 60
As
sin A m 2
sin A 2
sin 600 400 2

0
sin 60 2
sin 500
0
sin 30
0.7660
0.5000
When prism is immersed in water, we have to take refractive index of glass w.r.t. water;
w
1.532
1.33
1.149
If 'm is angle of minimum deviation in water, then
w
sin A 'm 2
sin A 2
and much more.
sin A 'm 2 w g sin A 2

1.149 sin 300
1.149
2
0.5745
sin A
'
m
2 sin
0.5745
35 4
0 '
A 'm 7008'
'm 7008' A
7008' 600
1008'
0
The new angle of minimum deviation of the parallel beam is 10 8 .
12. A cell of emf 'E' and internal resistance 'r' is connected across a variable resistor 'R'. Plot a
graph showing variation of terminal voltage 'V' of the cell versus the current 'I'. Using the plot,
show how the emf of the cell and its internal resistance can be determined.
Sol.
Terminal Voltage V of the cell is, V E Ir
where E is the EMF of the cell, r is the internal
resistance and I the current through the circuit.
So, V Ir E
On comparison with the Equation of a line,
y mx c
y V , m r , x I , c E
On plotting the graph between terminal voltage

V and the current I
EMF of Cell = V-axis intercept
Internal Resistance = Slope of the Line
and much more.
13. Explain, with the help of a circuit diagram, the working of a p-n junction diode as a half-wave
rectifier.
Sol.
The circuit diagram for half wave rectifier is as shown below:
Working: During the positive half cycle of the input a.c. The p-n junction is forward biased i.e the
forward current flows from p to n, the diode offers a low resistance path to the current. Thus we
get output across-load i.e. a.c input will be obtained as d.c output
During the negative half cycle of the input a.c. The p-n junction is reversed biased i.e the reverse
current flows from n to p, the diode offers a high resistance path to the current. Thus we get no
output across the load.
This principle is explained in the diagram given below.
14. Two particles with charge ratio 1 : 2 and mass ratio 1 : 4 have been accelerated through same
potential. Find the ratio of
(i) Their momenta.
(ii) de Broglie wavelengths. The particles are initially at rest.
and much more.
Sol.
(i) Let the charges on the two particles be q and 2q and mass be m and 4m
We have
KE acquired charge V
and
K1 qV
K 2 2q V
K1 : K 2 1: 2.
h
ii de Broglie wavelength
m
h
2m K
1 h / 2m1 K1
2 h / 2m2 K 2
m2 K 2
m1K1
4m 2
m 1
2 2 :1.
15. A convex lens made up of glass of refractive index 1.5 is dipped, in turn, in (i) a medium of
refractive index 1.65, (ii) a medium of refractive index 1.33.
(a) Will it behave as a converging or a diverging lens in the two cases?
(b) How will its focal length change in the two media?
Sol.
(a) Let f air be the focal length of lens in air then,
1 1
1
ng 1
f air
R1 R2
1 1
1
2

R1 R2 f air ng 1 f air
...(1)
and much more.
(i) When lens is dipped in a medium A here nA 1.65
1 1
1
nA 1
Focal length be f A when dipped in a medium A then
fA
R1 R2
Using equation (1) we have,
1
1 1.5 2

f A 1.6 5 1 f air 5.5 f air
f A 5.5 f air
As sign of f A is opposite to that of f air ,
Therefore, the lens will behave as diverging lens.
(ii) When lens is dipped in Medium B nB 1.33
Let f B be the focal length of lens when dipped in medium B.
Then,
1 1 ng
1 1
1
ng 1 1
fB
R1 R2 nB R1 R2
1 1.5
0.34
2
f B 1.33 f air 1.33 f air

f B 3.91 f air
As the Sign of f B is same as that of f air the lens will behave as a converging lens.
Change in Focal length:
(i) Focal length will become negative and its magnitude would increase by half.
(ii) Focal length increases.
16. Write briefly any two factors which demonstrate the need for modulating a signal. Draw a
suitable diagram to show amplitude modulation using a sinusoidal signal as the modulating signal?
and much more.
Sol.
The need for modulation can be summarized as follows:
For transmitting a signal, we need an antenna or an aerial. This antenna should have a size
comparable to the wavelength of the signal (at least /4 in dimension) so that the antenna properly
senses the time variation of the signal. For an electromagnetic wave of frequency 20 kHz, the
wavelength is 15 km. Obviously, such a long antenna is not possible to construct and operate.
Hence direct transmission of such baseband signals is not practical.
A theoretical study of radiation from a linear antenna (length l) shows that the power radiated is
2
proportional to (l/) . This implies that for the same antenna length, the power radiated increases
with decreasing , i.e., increasing frequency. Hence, the effective power radiated by a long
wavelength baseband signal would be small. For a good transmission, we need high powers and
hence this also points out to the need of using high frequency transmission.
Because of these reasons, we use the technology of modulation, for transmitting message signals
effectively for long distances.
17. Show diagrammatically the behaviour of magnetic field lines in the presence of (i)
paramagnetic and (ii) diamagnetic substances. How does one explain this distinguishing feature?
Sol.
(i) The behaviour of magnetic field lines in the presence of a diamagnetic substance:
and much more.
(ii) The behaviour of magnetic field lines in the presence of a paramagnetic substance:
The differnce in features is because of the difference in the relative permeabilities. The relative
permeability of the diamagnetic substance is less than 1; so, the magnetic lines of force do not
prefer passing through the substance. The relative permeability of a paramagnetic substance is
greater than 1; so, the magnetic lines of force prefer passing through the substance.
18. Draw a circuit diagram of n-p-n transistor amplifier in CE configuration. Under what condition
does the transistor act as an amplifier?
Sol.
The circuit diagram of an NPN transistor amplifier in CE configuration is given below:
The transistor acts as an amplifier when the input circuit (emitterbase) is forward biased with low
voltage VBB and the output circuit ( collectorbase) is reverse biased with high voltage VCC .
and much more.
19. Two Polaroids A and B are kept in a crossed position. How should a third Polaroid C be placed
1
between them so that the intensity of polarised light transmitted by Polaroid B reduces to th of the
8
intensity of unpolarised light incident on A?
Sol.
Let the third Polaroid C be kept at with the axis of Polaroid A.
Intensity of polarised light from C,

I1 I 0 cos2 , where I 0 is intensity of polarised light from A
Angle between axis of B and C 90o
Intensity of polarised light from B,

I 2 I1 cos2 90o I1 sin 2
Using (i),
2I0
I 2 I 0 cos sin
8
2
Note that 2I0 is the intensity of unpolarised light incident on A,
4 cos 2 sin 2 1
or
2sin cos
2
sin 2 1
sin 2 1 sin 90o
90o
45o
2
20. A parallel plate capacitor with circular plates of

radius 1 m has a capacitance of 1 m has a capacitance of
1 nF. At t = 0, it is connected for charging in series with
a resistor R = 1 M across 2 V battery. Calculate the
magnetic field at a point P, half way between the centre
and the periphery of the plates as shown in figure after
103 sec. (You may start by assuming that the charge on
the capacitor at time t is, q (t) = CV [1 exp. (t/)],
where the time constant is equal to CR).
and much more.
Sol.
The time constant of the C-R circuit is given by: CR 10 10 10 s
9
Charge on capacitor at any time t during charging is given by: q CV 1 e t

dq
1 t CV t
e
CV 0 e
dt

The electric field inbetween the plates at time t is,
q
E
0 A 0 r 2
Consider a circular loop of radius r 1 2 m , parallel to the plates passing through P. The
magnetic field at all points on this loop is of the same value and acting tangentially to the loop.
2
q
q r
2
2
r
The electric flux through this loop is, E Er
2
2
0 r
0 r
dE
d q r 2 r 2 dq r 2 CV t
e
0
2
2
The displacement current, iD 0
2
dt
dt 0 r r dt r
3
When, t = 10 s,
iD
1 2
2
10 2 10
e
3
10
10
0.5 10
A
Applying Ampere Maxwells law to the loop, we have

B.dl 0 i iD 0 0 iD 0iD
or
or
B 2r
0 0.5 10
e
0
0.5 106 2 107 0.5 106 2 1013
B
0.74 1013 T
2 1 2
e
2.718
2.718
1 2
21. Draw a labeled diagram of a full wave rectifier circuit. State its working principle. Show the
input-output waveforms?
Sol.
To get an output voltage for both half cycles of the input signal, we use full wave rectifiers. The
commonly used full wave rectifier circuits are center-tap rectifier and bridge rectifier. The figure
below shows the center-tap rectifier circuit.
and much more.
Now consider the circuit. The P-side of the diodes D1 and D2 are connected to the secondary
terminals of the transformer. The N-sides of the diodes are connected together. The load is
connected between this point and the midpoint of the transformer. When the input signal to diode
D1 is positive, it conducts and load current flows. During this time, the input to diode D2 is
negative with respect to the midpoint. During the negative half cycle of the input signal, the
voltage at D1 is negative and that at D2 is positive. So D2 conducts during this time period. Thus,
we get output voltage during both the half cycles. As the full wave rectifier rectifies both the half
cycles, it is more efficient than the half wave rectifier. The waveforms are given below:
OR
Write any two distinguishing features between conductors, semiconductors and insulators on the
basis of energy band diagrams.
Sol.
Conductors:
and much more.
(i) For conductors, the valence band is completely filled and the conduction band can have two
possibilitieseither it is partially filled with an extremely small energy gap between the valence
and conduction bands or it is empty, with the two bands overlapping each other, as shown.
(ii) On applying an even small electric field, conductors can conduct electricity.
Insulators:
(i) For insulators, the energy gap between the conduction and valence bands is very large. Also, the
conduction band is practically empty, as shown.
(ii) When an electric field is applied across such a solid, the electrons find it difficult to acquire
such a large amount of energy to reach the conduction band. Thus, the conduction band continues
to be empty. That is why no current flows through insulators.
Semiconductors:
(i) The energy band structure of semiconductors is similar to that of insulators, but in their case,
the size of forbidden energy gap is much smaller than that of the insulators, as shown.
(ii) When an electric field is applied to a semiconductor, the electrons in the valence band find it
comparatively easier to shift to the conduction band. So, the conductivity of semiconductors lies
between the conductivity of conductors and insulators.
and much more.
22. A convex lens of focal length 20 cm is placed coaxially with a convex mirror of radius of
curvature 20 cm. The two are kept at 15 cm apart. A point object lies 60 cm in front of the convex
lens. Draw a ray diagram to show the formation of the image by the combination. Determine the
nature and position of the image formed.
Sol.
For convex lens: f 20 cm; u OC 60 cm

As
1 1 1

v u f
Therefore,
1 1 1

v f u
1
1
20 60
3 1 2
60 60
60
v
30 cm
2
If image by lens alone is formed at I1, then CI1 = 30 cm.

For the convex mirror, I1 acts as a virtual object.
Therefore, u PI1 CI1 CP 30 15 15 cm; R 20 cm, v ?
From,
1 1 2

v u R
1 2 1

v R u
2 1
1

20 15 30
v 30 cm
and much more.
Therefore, the final image by the combination is formed at I, where PI = 30 cm.
SECTION D
23. For the past some time, Aarti had been observing some erratic body movement, unsteadiness
and lack of coordination in the activities of her sister Radha, who also used to complain of severe
headache occasionally. Aarti suggested to her parents to get a medical check-up of Radha. The
doctor thoroughly examined Radha and diagnosed that she has a brain tumour.
(a) What, according to you, are the values displayed by Aarti?
(b) How can radioisotopes help a doctor to diagnose brain tumour?
Sol.
(a) Aarti has displayed awareness and care towards the health of her sister.
(b) During the intake of different elements and compounds, the biological organisms absorb them
differently. Also, the exact distribution of the elements and their function in the various parts of
organisms cannot be known clearly. For this, a radioisotope is made to enter the organism along
with the elements and compounds, whose absorption, functioning and distribution to the brain has
to be studied. The radioisotope acts as a tag of label for the element or compound under study. By
detecting the radiation emitted by the isotope from the brain, the details regarding the absorption
and function of the compounds by the organisms are found out. In this way, radioisotopes help a
doctor to diagnose brain tumour.
SECTION E
24. a) With the help of the neat and labelled diagram, discuss the working of common emitter n-pn transistor amplifier.
b) Explain the phase relationship between input and output signal voltage and its voltage gain and
current gain.
Sol.
Here emitter is common to both the input and the output circuits, The input (emitter base) circuit is
forward biased with battery VBB of voltage VEB, and the output (collector-emitter) circuit is
reversed biased with battery VCC of voltage VCEo Due to this, the resistance of input circuit is low
and much more.
and that of output circuit is high. Re is a load resistance connected in the collector circuit. The low
input a.c. voltage signal is applied across the base-emitter circuit and the amplified a.c. voltage
signal (i.e., output) is obtained as the change in collector voltage. In circuit diagram arrows
represent the direction of conventional current or hole current, which is opposite to the direction of
electronic current.
When no a.c. signal voltage is applied to the input circuit, but the emitter base circuit is closed, let
us consider, that Ie ,Ib and Ic be the emitter current, base current and collector current respectively.
Then, according to Kirchhoff's first law,
Ie = Ib + Ic
0
In this case, the output signal voltage obtained across collector is 180 out of phase with the input
voltage signal.
Phase relationship between input and output voltages:
a) When the positive half cycle of input a.c. signal voltage comes, it opposes the forward biasing
of the emitter base circuit. Due to it, the emitter current decreases and hence collector current
decreases; consequently the collector voltage Vc increases. Since the collector is connected to the
negative terminal of a VCC battery of voltage VCE, therefore, the increase in collector voltage
means, the collector will become more negative. This indicates that during the positive half cycle
of input a.c. signal voltage, the output signal voltage at the collector varies through the negative
half cycle, i.e., 1800 out of phase.
b) During the negative half cycle of input a.c. signal voltage, it supports the forward biasing of the
emitter-base circuit, due to it; the emitter current increases and hence collector current increases;
consequently the collector voltage Vc decreases i.e., the collector becomes less negative. Thus, the
output signal voltage at the collector varies through the positive half cycle, i.e., 1800 out of phase.
Hence, in common emitter transistor amplifier circuit, the input signal voltage and the output
0
collector voltage are 180 out of phase.
and much more.
Current Gain: It is defined as ratio of change in collector current (IC) to the change in base
current (Ib) at constant collector voltage. It is denoted by a.c.
Therefore,
a.c.
I c
I b
Voltage Gain: It is defined as the ratio of the change in output voltage (VC) to the change in
input voltage (Vi).
VC
AV
Vi
I C Ro
I b Ri
Ro
a .c .
Ri
a.c. Resistance Gain
Where Ro and Ri are the output and input resistances of the circuit.
Here a.c. > > a.c., but resistance gain (Ro / Ri) is less than that in case of a common base transistor
amplifier, hence the a.c. voltage gain in a common emitter amplifier is greater as compared to that
of the common base transistor amplifier.
From the above equation:
Ro
AV a.c.
Ri
g m Ro
Actually, AV gm Ro ,here the negative sign indicates phase reversal of output.
OR
a) Draw the circuit arrangement for studying the input and the output characteristic of an n-p-n
transistor in CE configuration. With the help
of these characteristics define:
i) Input resistance
ii) Current Amplification factor
b) Describe briefly with the help of a circuit
diagram how an n-p-n transistor is used to
produce self sustained oscillations?
and much more.
Sol.
a) The study of the characteristics of a transistor when grounded emitter is kept as a common
terminal is as shown in the figure. The base is the input terminal and collector is the output
terminal as shown. The various currents are marked keeping in view the condition
I e Ib I c
Input Characteristic:
The input characteristics of the transistor
represent the variation of the base current Ib
with base emitter voltage VBE, keeping VCE
fixed. Their shape is shown in figure. The
current is small as long as VBE is less than the
barrier voltage. When VBE is greater than the
barrier voltage, the curves look similar to that
of a forward biased diode. More than 95% of
emitter electrons (in npn transistor) and emitter holes (in pnp transistor) goes to the collector to
form the collector current. That is why Ib is much smaller (in micro- ampere).
As long as the collector- emitter junction is
reverse biased, the input characteristics are
not affected much by small changes in VCE.
Output characteristic:
The output characteristic is obtained by
observing the variation of Ic as VCE is varied
keeping Ib constant. It is obvious that if VBE
is increased by a small amount, both hole
current from the emitter region and the
electron current from the base region will
increase. As a consequence both Ib and Ic
will increase proportionately. This shows that when Ib increases Ic also increases. The plot of Ic
versus VCE for different fixed values of Ib gives one output characteristic. So there will be different
output characteristics corresponding to different values of Ib as shown in Figure.
i) Input resistance (ri): This is defined as the ratio of change in base-emitter voltage (VBE) to the
resulting change in base current (Ib) at constant collector-emitter voltage (VCE). This is dynamic
(ac resistance) and as can be seen from the input characteristic, its value varies with the operating
current in the transistor:
and much more.
VBE
ri
I B VCE
The value of ri can be anything from a few hundreds to a few thousand ohms.
ii) Current amplification factor (): This is defined as the ratio of the change in collector current
to the change in base current at a constant collector-emitter voltage (VCE) when the transistor is in
active state.
I c
ac
I b VCE
This is also known as small signal current gain and its value is very large.
Also the ratio of Ic and Ib gives dc of the transistor. Hence,
Ic
dc
Ib
Since Ic increases with Ib almost linearly and Ic = 0 when Ib = 0, the values of both dc and ac are
nearly equal. So, for most calculations dc can be used. Both ac and dc vary with VCE and Ib (or Ic)
slightly.
b) For transistor as an oscillator, the L-C
circuit is inserted in the emitter base circuit
of transistor which is forward biased with
battery VBB. The collector emitter circuit is
reverse biased with battery Vcc. A coil L1 is
inserted in collector emitter circuit. It is
coupled with L in such a way that if
increasing magnetic flux is linked with L, it
will support the forward bias of emitter base
circuit and if decreasing magnetic flux is
linked with L, it will oppose the forward bias of the emitter base circuit. Hence, the oscillator will
produce self sustained oscillations.
25. (a) In Young's double slit experiment, describe briefly how bright and dark fringes are obtained
on the screen kept in front of a double slit. Hence obtain the expression for the fringe width.
(b) The ratio of the intensities at minima to the maxima in the Young's double slit experiment is 9 :
25. Find the ratio of the widths of the two slits.
Sol.
and much more.
(a) In Young's double-slit experiment, the wavefronts from the two illuminated slits superpose on
the screen. This leads to formation of alternate dark and bright fringes due to constructive and
destructive interference, respectively. At the centre C of the screen, the intensity of light is
maximum and it is called central maxima.
Let S1 and S2 be two slits separated by a distance d. GGis the screen at a distance D from the slits
S1 and S2. Point C is equidistant from both the slits. The intensity of light will be maximum at this
point because the path difference of the waves reaching this point will be zero.
At point P, the path difference between the rays
coming from the slits S1 and S2 is S2P S1P.
Now, S1S2 = d, EF = d, and S2F= D
In S2PF,
2 12
S2 P S2 F PF
2
2
d
S2 P D x
2
2 12

d
x
2
D 1
D2
12
Similarly, in S1PE,

d
x
2
S1 P D 1
D2
12
2
2
d
d
x
x
1
1
2
2
S 2 P S1P D 1
D 1
2
2 D
2 D2
On expanding it binomially,
1 d xd
S2 P S1P
4x
2D 2 D
For bright fringes (constructive interference), the path difference is an integral multiple of
wavelengths, i.e. path difference is n.
and much more.
Therefore,
xd
n
D
n D
x
, where n = 0, 1, 2, 3, 4,
d
For n = 0, xo = 0
n 1, x1
d
2 D
n 2, x2
d
3 D
n 3, x3
d
.
.
n D
n n, xn
d
Fringe width ():
The separation between the centres of two consecutive bright fringes is called the width of a dark
fringe.
1 xn xn1
Similarly, for dark fringes,
xn 2n 1
D
2 d
For
n 1, x1
For
3 D
n 2, x2
2d
2d
The separation between the centres of two consecutive dark interference fringes is the width of a
bright fringe.
Therefore, 2 xn xn 1
D
d
and much more.
Therefore,
1 = 2
All the bright and dark fringes are of equal width as 1 = 2.

(b) Let W, A, I represent the slit width, amplitude and intensity.
I min A1 A2
9
2
I max A1 A2
25
2
A1 A2 3
A1 A2 5
or
A1 4
A2 1
W1 A1
16
2
1
W2 A2
2
OR
(a) Describe briefly how a diffraction pattern is obtained on a screen due to a single narrow slit
illuminated by a monochromatic source of light. Hence obtain the conditions for the angular width
of secondary maxima and secondary minima.
(b) Two wavelengths of sodium light of 590 nm and 596 nm are used in turn to study the
6
diffraction taking place at a single slit of aperture 2 10 m. The distance between the slit and the
screen is 15 m. Calculate the separation between the positions of first maxima of the diffraction
pattern obtained in the two cases.
Sol.
(a) The phenomenon of bending of light round the sharp corners of an obstacle and spreading into
the regions of the geometrical shadow is called diffraction.
\
Expression for Fringe Width:
and much more.
Consider a parallel beam of light from a lens falling on a slit AB. As diffraction occurs, the pattern
is focused on the screen XY with the help of lens L2. We will obtain a diffraction pattern that is a
central maximum at the centre O flanked by a number of dark and bright fringes called secondary
maxima and minima.
Central Maximum: Each point on the plane wave front AB sends out secondary wavelets in all
directions. The waves from points equidistant from the centre C lying on the upper and lower half
reach point O with zero path difference and hence, reinforce each other, producing maximum
intensity at point O.
Positions and Widths of Secondary Maxima and Minima
Consider a point P on the screen at which wavelets travelling in a direction making angle with
CO are brought to focus by the lens. The wavelets from points A and B will have a path difference
equal to BN.
From the right-angled ANB, we have:
BN = AB sin
BN = a sin
Suppose,
(i)
BN = and = 1
Then, the above equation gives

= a sin 1
sin 1
... (ii)
Such a point on the screen will be the position of first secondary minimum.
If BN = 2 and = 2, then
and much more.
2 = a sin 2
2
sin 2
a
... (iii)
Such a point on the screen will be the position of second secondary minimum.
In general, for nth minimum at point P,
n
sin n
a
... (iv)
If yn is the distance of the nth minimum from the centre of the screen, from right-angled COP, we
have:
OP
tan n
CO
yn
tan n
D
... (v)
In case n is small, sin n tan n

Therefore, Equations (iv) and (v) give
yn n
D
a
n D
yn
a
Width of the secondary maximum,
nD n 1 D
yn yn1
a
a
... (vi)
Since is independent of n, all the secondary maxima are of the same width .
3
and 1 , from equation (i), we have:
If BN
2
3
sin 1
2a
and much more.
Such a point on the screen will be the position of the first secondary maximum.
Corresponding to path difference,
5
and 2 , the second secondary maximum is produced
If BN
2
In general, for the nth maximum at point P,
sin n
2n 1
2a
... (vii)
th
If yn is the distance of n maximum from the centre of the screen, then the angular position of the
nth maximum is given by
yn
tan n
D
... (viii)
In case n is small,
sin n tan n
2n 1 D
y
n
2a
Width of the secondary minimum,

nD n 1 D
yn yn 1
a
a
D

a
... (ix)
Since is independent of n, all the secondary minima are of the same width .
3
(b) For first maxima of the diffraction pattern we know sin
2a
where a is aperture of slit.
y
For small values of , sin tan
D
Where y is the distance of first minima from central line and D is the distance between the slit and
the screen.
and much more.
So,
3
y
D
2a
For 590 nm,
3 590 109
y1
1.5
6
2 2 10
y1 0.66375 m
For 596 nm,
3 596 109
y2
1.5
6
2 2 10
y2 0.6075 m
Hence, Separation between the positions of first maxima y2 y1 0.00675 m
26. (a) Deduce an expression for the frequency of revolution of a charged particle in a magnetic
field and show that it is independent of velocity or energy of the particle.
(b) Draw a schematic sketch of a cyclotron. Explain, giving the essential details of its construction,
how it is used to accelerate the charged particles.
Sol.
(a) When a charged particle with charge q moves inside a magnetic field B with velocity v, it
experiences a force, which is given by:

F q v B

Here, v is perpendicular to B , F is the force on the charged particle which acts as the centripetal
force and makes it move along a circular path.
and much more.
Let m be the mass of the charged particle and r be the radius of the circular path.
mv 2
q v B
r
v and B are at right angles:
mv 2
qvB
r
mv
r
Bq
Time period of circular motion of the charged particle can be calculated as shown below:
2 r
T
v
2 mv
v Bq
2 m
T
Bq
Therefore, Angular frequency is
2
T
Bq
Therefore, the frequency of the revolution of

the charged particle is independent of the
velocity or the energy of the particle.
and much more.
(b) It consists of two D-shaped hollow semicircular metal chambers D1 and D2, which are called
dees. The two dees are placed horizontally with a small gap separating them. The dees are
connected to the source of high frequency electric field. The dees are enclosed in a metal box
3
containing a gas at a low pressure of the order of 10 mm mercury. The whole apparatus is placed
between two poles of an electromagnet. The magnetic field acts perpendicular to the dees. The
positive ions are produced in the gap between the two dees by ionisation of the gas.
A cyclotron involves the use of an electric field to accelerate charged particles across the gap
between the two D-shaped magnetic field regions. The magnetic field is perpendicular to the paths
of the charged particles that make them follow in circular paths within the two dees. An alternating
voltage accelerates the charged particles each time they cross the dees. The radius of each
particles path increases with its speed. So, the accelerated particles spiral toward the outer wall of
the cyclotron.
Square wave electric fields are used to accelerate the charged particles in a cyclotron.
The accelerating electric field reverses just at the time the charged particle finishes its half circle,
so that it gets accelerated across the gap between the dees.
The particle gets accelerated again and again, and its velocity increases. Therefore, it attains high
kinetic energy.
OR
(a) Using Ampere's circuital law, obtain the expression for the magnetic field due to a long
solenoid at a point inside the solenoid on its axis.
(b) In what respect is a toroid different from a solenoid? Draw and compare the pattern of the
magnetic field lines in the two cases.
(c) How is the magnetic field inside a given solenoid made strong?
Sol.
a) Solenoid:
It consists of an insulating long wire closely wound in the form of helix.
and much more.
Its length is large as compared to its diameter.
Magnetic field due to RQ and SP path is zero because they are perpendicular to the axis of
solenoid. Since SR is outside the solenoid, the magnetic field is zero.
The line integral of magnetic field induction B over the closed path PQRS is
PQRS

B.dl B.dl BL
PQ
From Ampere?s circuital law,

B.dl 0 Total current through rectangle PQRS
PQRS
BL 0 Number of turns in rectangle Current

BL 0 nLI
B 0 nI
b) Toroid:
It is a hollow circular ring on which a large number of turns of a wire are closely wound.
Magnetic field along loop 1 is zero because the loop encloses no current.
Three Amperian loops (1, 2, and 3) are shown by dotted lines.

Magnetic field along loop 3 is zero because the current coming out of the paper is cancelled
exactly by the current going out of it.
Magnetic field at S (along loop 2):
and much more.
From Ampere's Law,

B(2 r ) 0 NI
Where,
B Magnetic Field
r Radius
I Current
N Number of turns of toroidal coil
0 NI
B
2 r
These are the Magnetic field diagrams.

c) The magnetic field lines inside a solenoid can be made strong by:
Inserting a ferromagnetic core.

Increasing the number of turns of the solenoid.
Increasing the current passing through the solenoid.
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and much more.

CBSE CBSE Class 12 Physics Solved Model Paper Set 1

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CBSE Class 12 Physics Solved Model Paper 2015

Model Paper 2015

Since, Speed of light in vacuum is 3 108 ms1.

3. What is the condition for maximum potential in Van de graff generator?

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4. Does incident photon essentially eject a photoelectron?

Since the number of quantisation level is 8,

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By loop rule in AEFDA, we have

Applying loop rule in EBCFE, we get

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First K1 is inserted, K2 is not inserted let the balancing length be L1

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sin 600 400 2

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sin A 'm 2 w g sin A 2

The new angle of minimum deviation of the parallel beam is 10 8 .

On plotting the graph between terminal voltage

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

(i) When lens is dipped in a medium A here nA 1.65

f B 1.33 f air 1.33 f air

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

Intensity of polarised light from C,

Angle between axis of B and C 90o

Intensity of polarised light from B,

Note that 2I0 is the intensity of unpolarised light incident on A,

sin 2 1 sin 90o

20. A parallel plate capacitor with circular plates of

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Charge on capacitor at any time t during charging is given by: q CV 1 e t

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CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

For convex lens: f 20 cm; u OC 60 cm

If image by lens alone is formed at I1, then CI1 = 30 cm.

CBSE Class 12 Physics Solved Model Paper 2015

Therefore, the final image by the combination is formed at I, where PI = 30 cm.

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

CBSE Class 12 Physics Solved Model Paper 2015

Similarly, for dark fringes,

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All the bright and dark fringes are of equal width as 1 = 2.

CBSE Class 12 Physics Solved Model Paper 2015

Then, the above equation gives

CBSE Class 12 Physics Solved Model Paper 2015

In case n is small, sin n tan n

Width of the secondary maximum,

CBSE Class 12 Physics Solved Model Paper 2015

Width of the secondary minimum,

CBSE Class 12 Physics Solved Model Paper 2015

For 590 nm,

CBSE Class 12 Physics Solved Model Paper 2015