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Laboratorio Microelectrnica
Tema:
Informe 1
INTEGRANTES:
12190020
2016-II
Inversor Fig A y Fig B
Vista de corte en 2D
Vista de corte en 3D
fmx=
1
1
=
=55.56 Ghz
Tpmx 18 ps
Frecuencia de simulacin:
fsimulacion<
Ondas de simulacin
Descripcin CIR
CIRCUIT C:\Users\Andr\Desktop\invcmos.MSK
*
* IC Technology: ST 0.25m - 6 Metal
*
VDD 1 0 DC 2.50
Vclock1 6 0 PULSE(0.00 2.50 1.00N 0.05N 0.05N 1.00N 2.10N)
*
* List of nodes
* "s1" corresponds to n4
* "clock1" corresponds to n6
*
* MOS devices
MN1 0 6 4 0 TN W= 0.75U L= 0.38U
MP1 4 6 1 1 TP W= 0.75U L= 0.38U
*
C2 1 0 5.909fF
C3 1 0 0.738fF
C4 4 0 1.068fF
C6 6 0 0.221fF
*
* n-MOS Model 3 :
*
.MODEL TN NMOS LEVEL=3 VTO=0.45 KP=300.000E-6
+LD =0.000U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=130.00K
+CGSO= 0.0p CGDO= 0.0p
*
* p-MOS Model 3:
*
.MODEL TP PMOS LEVEL=3 VTO=-0.45 KP=120.000E-6
Descripcin CIF
Vistas en 2D
Vista 3D
Fig 1
In1
In2
F=S . 2+ S . 1
rea de Layout
A=31.8u*17.3u = 550(um)2
FRECUENCIA MXIMA DE OPERACIN
fmx=
1
1
=
=0.862 Ghz
Tpmx 1159 ps
Frecuencia de simulacin:
fsimulacion<
fmx 0.862Ghz
=
2
2