MITSUBISHI IGBT MODULES

CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

A
B
H

C2E1

C1

K
G1 E1

E2

E2 G2

S
L
R - M5 THD (3 TYP.)
P - DIA. (2 TYP.)
J

TAB#110 t=0.5

M
D
F

G2
E2

E2

C2E1

C1

E1
G1

Outline Drawing and Circuit Diagram

Dimensions

Inches

Millimeters

Dimensions

Inches

Millimeters

3.70

94.0

0.51

13.0

3.1500.01

80.00.25

0.47

12.0

1.89

48.0

0.30

7.5

1.18 Max.

30.0 Max.

0.28

7.0

0.90

23.0

0.256 Dia.

Dia. 6.5

0.83

21.2

0.31

8.0

0.71

18.0

M5 Metric

M5

0.67

17.0

0.16

4.0

0.62

16.0

Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
two IGBTs in a half-bridge configuration with each transistor having a
reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (VCES), 100 Ampere
Dual IGBT Module.
Type

Current Rating
Amperes

VCES
Volts (x 50)

CM

100

24

Sep.1998

MITSUBISHI IGBT MODULES

CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings

Symbol

CM100DY-24H

Units

Junction Temperature

Tj

40 to 150

Storage Temperature

Tstg

40 to 125

Collector-Emitter Voltage (G-E SHORT)

VCES

1200

Volts

Gate-Emitter Voltage (C-E SHORT)

VGES

20

Volts

IC

100

Amperes

ICM

200*

Amperes

IE

100

Amperes

Peak Emitter Current**

IEM

200*

Amperes

Maximum Collector Dissipation (TC = 25C, Tj 150C)

Pc

780

Watts

Mounting Torque, M5 Main Terminal

1.47 ~ 1.96

Nm

Mounting Torque, M6 Mounting

1.96 ~ 2.94

Nm

270

Grams

Viso

2500

Vrms

Collector Current (TC = 25C)

Peak Collector Current
Emitter Current** (TC = 25C)

Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

VGE(th)

IC = 10mA, VCE = 10V

4.5

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 100A, VGE = 15V

IC = 100A, VGE = 15V, Tj = 150C

Total Gate Charge

QG

VCC = 600V, IC = 100A, VGE = 15V

Emitter-Collector Voltage

VEC

IE = 100A, VGE = 0V

Typ.

Max.

Units

1.0

mA

0.5

6.0

7.5

Volts

2.5

3.4**

Volts

2.25

Volts

500

nC

3.5

Volts

Test Conditions

Min.

Typ.

Max.

Units

20

nF

VGE = 0V, VCE = 10V

nF

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Input Capacitance

Cies

Output Capacitance

Coes

Reverse Transfer Capacitance

Cres

nF

Resistive

Turn-on Delay Time

td(on)

250

ns

Load

Rise Time

Switching

Turn-off Delay Time

Time

Fall Time

tr

VCC = 600V, IC = 100A,

350

ns

td(off)

VGE1 = VGE2 = 15V, RG = 3.1

300

ns

350

ns

Diode Reverse Recovery Time

trr

tf
IE = 100A, diE/dt = 200A/s

250

ns

Diode Reverse Recovery Charge

Qrr

IE = 100A, diE/dt = 200A/s

0.74

Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Rth(j-c)

Per IGBT

0.16

C/W

Thermal Resistance, Junction to Case

Rth(j-c)

Per FWDi

0.35

C/W

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

0.065

C/W

Sep.1998

MITSUBISHI IGBT MODULES

CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE

200

160

15

12

VGE = 20V
11

120
10

80

40
7

VCE = 10V
Tj = 25C
Tj = 125C

160

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

Tj = 25oC

COLLECTOR CURRENT, IC, (AMPERES)

120

80

40

0
0

10

0
0

12

16

20

40

80

120

160

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)

CAPACITANCE VS. VCE

(TYPICAL)

7
5

IC = 200A

IC = 100A

2
IC = 40A

3
2

102
7
5
3
2

12

16

1.0

20

1.5

2.0

2.5

3.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

103

103
REVERSE RECOVERY TIME, t rr, (ns)

td(on)

VCC = 600V
VGE = 15V
RG = 3.1
Tj = 125C

101
100

102

COLLECTOR CURRENT, IC, (AMPERES)

102

101

di/dt = -200A/sec
Tj = 25C

tr

101

Irr

101
100

101
EMITTER CURRENT, IE, (AMPERES)

100

101

102

GATE CHARGE, VGE

102

t rr

Cres

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

tf
td(off)

10-1
10-1

3.5

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

102

Coes

100

VGE = 0V

Cies

101

101

200

102

Tj = 25C

100
102

20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

Tj = 25C

CAPACITANCE, Cies, Coes, Cres, (nF)

10

SWITCHING TIME, (ns)

VGE = 15V
Tj = 25C
Tj = 125C

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

COLLECTOR CURRENT, IC, (AMPERES)

200

COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)

COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)

TRANSFER CHARACTERISTICS
(TYPICAL)

OUTPUT CHARACTERISTICS
(TYPICAL)

IC = 100A

16

VCC = 400V
VCC = 600V

12

0
0

200

400

600

800

GATE CHARGE, QG, (nC)

Sep.1998

MITSUBISHI IGBT MODULES

CM100DY-24H

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
10-2
10-1
100
101

100

101

Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.16C/W

10-1

10-1

10-2

10-2

10-3
10-5
TIME, (s)

10-4

10-3
10-3

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

Zth = Rth (NORMALIZED VALUE)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)

Zth = Rth (NORMALIZED VALUE)

HIGH POWER SWITCHING USE

INSULATED TYPE

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
10-2
10-1
100
101

100

101

Single Pulse
TC = 25C
Per Unit Base = R th(j-c) = 0.35C/W

10-1

10-1

10-2

10-2

10-3
10-5

10-4

10-3
10-3

TIME, (s)

Sep.1998