PD - 97106

IRFP4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA

HEXFET Power MOSFET

VDSS
RDS(on) typ.
max.
ID

150V
12m:
15.5m:
78A
D

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units
A

ID @ TC = 25C

Continuous Drain Current, VGS @ 10V

78 c

ID @ TC = 100C

Continuous Drain Current, VGS @ 10V

55

IDM

Pulsed Drain Current d

330

PD @TC = 25C

Maximum Power Dissipation

310

Linear Derating Factor

2.0

Gate-to-Source Voltage
Single Pulse Avalanche Energy e

30

W/C
V

210

mJ

-55 to + 175

VGS
EAS (Thermally limited)
TJ

Operating Junction and

TSTG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds

(1.6mm from case)

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Thermal Resistance
Parameter

Typ.

Max.

RJC

Junction-to-Case g

0.49

RCS

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient g

0.24

40

RJA

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Units
C/W

1
6/23/06

IRFP4321PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS

Parameter

Min. Typ. Max. Units

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)
Static Drain-to-Source On-Resistance

150

mV/C Reference to 25C, ID = 1mAd

12

15.5

VGS(th)

Gate Threshold Voltage

3.0

5.0

IDSS

Drain-to-Source Leakage Current

RG(int)

Conditions

150

IGSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250A

m VGS = 10V, ID = 33A f

V

VDS = VGS, ID = 250A

VDS = 150V, VGS = 0V

20

1.0

mA VDS = 150V, VGS = 0V, TJ = 125C

nA

Gate-to-Source Forward Leakage

100

Gate-to-Source Reverse Leakage

-100

Internal Gate Resistance

0.8

VGS = 20V
VGS = -20V

Dynamic @ TJ = 25C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs
Qg

Forward Transconductance

130

Total Gate Charge

71

110

nC

Qgs

Gate-to-Source Charge

24

VDS = 75V

Qgd

Gate-to-Drain ("Miller") Charge

21

VGS = 10V f

td(on)

Turn-On Delay Time

18

tr

Rise Time

60

ID = 50A

td(off)

Turn-Off Delay Time

25

RG = 2.5

tf

Fall Time

35

VGS = 10V f

Ciss

Input Capacitance

4460

Coss

Output Capacitance

390

VDS = 25V

Crss

Reverse Transfer Capacitance

82

= 1.0MHz

ns

pF

VDS = 25V, ID = 50A

ID = 50A

VDD = 75V

VGS = 0V

Diode Characteristics
Symbol

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

78c

MOSFET symbol

ISM

(Body Diode)
Pulsed Source Current

330

showing the
integral reverse

VSD

(Body Diode)d
Diode Forward Voltage

1.3

trr

Reverse Recovery Time

89

130

ns

Qrr

Reverse Recovery Charge

300

450

nC

IRRM

Reverse Recovery Current

6.5

ton

Forward Turn-On Time

G
S

p-n junction diode.

TJ = 25C, IS = 50A, VGS = 0V f
ID = 50A
VR = 128V,
di/dt = 100A/s f

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25C, L = 0.17mH
RG = 25, IAS = 50A, VGS =10V. Part not recommended for use
above this value.

Pulse width 400s; duty cycle 2%.

R is measured at TJ approximately 90C

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IRFP4321PbF
1000

1000

100
BOTTOM

10

5.0V

100
BOTTOM

5.0V

10

60s PULSE WIDTH

Tj = 175C

60s PULSE WIDTH

Tj = 25C
1

0.1
0.1

10

0.1

100

Fig 1. Typical Output Characteristics

10

100

Fig 2. Typical Output Characteristics

3.5

1000

TJ = 175C
10

TJ = 25C
VDS = 25V

60s PULSE WIDTH

0.1
3.0

4.0

5.0

6.0

7.0

8.0

VGS = 10V

3.0

2.5

(Normalized)

100

ID = 50A

RDS(on) , Drain-to-Source On Resistance

ID, Drain-to-Source Current()

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

2.0

1.5

1.0

0.5

9.0

-60 -40 -20

VGS, Gate-to-Source Voltage (V)

7000

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd

5000

Ciss
4000
3000

Coss

2000
1000

Crss
10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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ID= 50A
VDS = 120V

16

VDS= 75V
VDS= 30V

12

0
1

20 40 60 80 100 120 140 160 180

Fig 4. Normalized On-Resistance vs. Temperature

20

VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

6000

TJ , Junction Temperature (C)

Fig 3. Typical Transfer Characteristics

C, Capacitance (pF)

VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

TOP

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

TOP

VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V

20

40

60

80

100

120

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

IRFP4321PbF
1000
ID, Drain-to-Source Current (A)

ISD , Reverse Drain Current (A)

1000

100

TJ = 175C
10

TJ = 25C

OPERATION IN THIS AREA

LIMITED BY R DS (on)
100sec

100

1msec

10

10msec

1
Tc = 25C
Tj = 175C
Single Pulse

VGS = 0V
0.1

0.1
0.2

0.4

0.6

0.8

1.0

1.2

1.4

VSD , Source-to-Drain Voltage (V)

60

40

20

0
75

100

125

150

175

V(BR)DSS , Drain-to-Source Breakdown Voltage

ID , Drain Current (A)

LIMITED BY PACKAGE

50

1000

190

180

170

160

150

140
-60 -40 -20

TC , Case Temperature (C)

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

Fig 9. Maximum Drain Current vs.

Case Temperature

Fig 10. Drain-to-Source Breakdown Voltage

700

EAS, Single Pulse Avalanche Energy (mJ)

5.0

4.0

Energy (J)

100

VDS , Drain-toSource Voltage (V)

80

25

10

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

3.0

2.0

1.0

0.0

ID
13A
20A
BOTTOM 50A

600

TOP

500
400
300
200
100
0

20

40

60

80

100

120

140

VDS, Drain-to-Source Voltage (V)

Fig 11. Typical COSS Stored Energy

DC

160

25

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig 12. Maximum Avalanche Energy Vs. DrainCurrent

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IRFP4321PbF

Thermal Response ( Z thJC )

D = 0.50
0.1

0.20
0.10
0.05

0.02
0.01

0.01

R1
R1
J
1

R2
R2

R3
R3

Ri (C/W)
C

Ci= i/Ri
Ci= i/Ri

(sec)

0.076792 0.000083
0.233645 0.001175
0.179727 0.008326

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006

1E-005

0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150C and
Tstart =25C (Single Pulse)

Duty Cycle = Single Pulse

Avalanche Current (A)

0.01
10

0.05
0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming j = 25C and
Tstart = 150C.

0.1
1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

EAR , Avalanche Energy (mJ)

240

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A

200

160

120

80

40

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature (C)

PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC

Iav = 2DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav

Fig 15. Maximum Avalanche Energy vs. Temperature

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IRFP4321PbF
40

ID = 1.0A
ID = 1.0mA
ID = 250A

5.0

30

4.0

IRRM - (A)

VGS(th), Gate threshold Voltage (V)

6.0

3.0

20

IF = 33A
VR = 128V

10

2.0

TJ = 125C
TJ = 25C

1.0
-75

-50 -25

25

50

75

100 200 300 400 500 600 700 800 900 1000

100 125 150 175

dif / dt - (A / s)

TJ , Temperature ( C )

Fig. 17 - Typical Recovery Current vs. dif/dt

Fig 16. Threshold Voltage Vs. Temperature

40

3200
2800
2400

QRR - (nC)

IRRM - (A)

30

20

10

2000
1600
1200

IF = 50A
VR = 128V

IF = 33A
VR = 128V

800

TJ = 125C
TJ = 25C

TJ = 125C
TJ = 25C

400
0

100 200 300 400 500 600 700 800 900 1000

100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

dif / dt - (A / s)

Fig. 18 - Typical Recovery Current vs. dif/dt

Fig. 19 - Typical Stored Charge vs. dif/dt

3200
2800

QRR - (nC)

2400
2000
1600
1200
800
400
0

IF = 50A
VR = 128V
TJ = 125C
TJ = 25C
100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / s)

Fig. 20 - Typical Stored Charge vs. dif/dt

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IRFP4321PbF
D.U.T

Driver Gate Drive

D.U.T. ISD Waveform

Reverse
Recovery
Current

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

VDD

P.W.
Period
VGS=10V

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

D=

Period

P.W.

+
-

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor
Current
Inductor Curent
ISD

Ripple 5%

* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
V(BR)DSS
15V

DRIVER

VDS

tp

D.U.T

RG

+
V
- DD

IAS
VGS
20V

tp

0.01

I AS

Fig 22a. Unclamped Inductive Test Circuit

LD

Fig 22b. Unclamped Inductive Waveforms

VDS

VDS

90%

+
VDD -

10%

D.U.T

VGS

VGS
Pulse Width < 1s
Duty Factor < 0.1%

td(on)

Fig 23a. Switching Time Test Circuit

tr

td(off)

tf

Fig 23b. Switching Time Waveforms

Id
Vds
Vgs

L
DUT

1K

VCC
Vgs(th)

Qgs1 Qgs2

Fig 24a. Gate Charge Test Circuit

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Qgd

Qgodr

Fig 24b. Gate Charge Waveform

IRFP4321PbF
TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Part Marking Information

EXAMPLE: THIS IS AN IRFPE30
WITH AS SEMBLY
LOT CODE 5657
ASS EMBLED ON WW 35, 2001
IN T HE AS SEMBLY LINE "H"
Note: "P" in ass embly line pos ition
indicates "Lead-Free"

INTERNAT IONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE

PART NUMBER
IRFPE30
56

135H
57

DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06

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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/