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IRFP4321PbF
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
Benefits
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
VDSS
RDS(on) typ.
max.
ID
150V
12m:
15.5m:
78A
D
TO-247AC
Gate
Drain
Source
Parameter
Max.
Units
A
ID @ TC = 25C
78 c
ID @ TC = 100C
55
IDM
330
PD @TC = 25C
310
2.0
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
30
W/C
V
210
mJ
-55 to + 175
VGS
EAS (Thermally limited)
TJ
TSTG
10lbxin (1.1Nxm)
Thermal Resistance
Parameter
Typ.
Max.
RJC
Junction-to-Case g
0.49
RCS
0.24
40
RJA
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Units
C/W
1
6/23/06
IRFP4321PbF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
150
12
15.5
VGS(th)
3.0
5.0
IDSS
RG(int)
Conditions
150
IGSS
20
1.0
100
-100
0.8
VGS = 20V
VGS = -20V
Parameter
Conditions
gfs
Qg
Forward Transconductance
130
71
110
nC
Qgs
Gate-to-Source Charge
24
VDS = 75V
Qgd
21
VGS = 10V f
td(on)
18
tr
Rise Time
60
ID = 50A
td(off)
25
RG = 2.5
tf
Fall Time
35
VGS = 10V f
Ciss
Input Capacitance
4460
Coss
Output Capacitance
390
VDS = 25V
Crss
82
= 1.0MHz
ns
pF
VDD = 75V
VGS = 0V
Diode Characteristics
Symbol
Parameter
Conditions
IS
78c
MOSFET symbol
ISM
(Body Diode)
Pulsed Source Current
330
showing the
integral reverse
VSD
(Body Diode)d
Diode Forward Voltage
1.3
trr
89
130
ns
Qrr
300
450
nC
IRRM
6.5
ton
G
S
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25C, L = 0.17mH
RG = 25, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
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IRFP4321PbF
1000
1000
100
BOTTOM
10
5.0V
100
BOTTOM
5.0V
10
0.1
0.1
10
0.1
100
10
100
1000
TJ = 175C
10
TJ = 25C
VDS = 25V
4.0
5.0
6.0
7.0
8.0
VGS = 10V
3.0
2.5
(Normalized)
100
ID = 50A
2.0
1.5
1.0
0.5
9.0
7000
5000
Ciss
4000
3000
Coss
2000
1000
Crss
10
100
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ID= 50A
VDS = 120V
16
VDS= 75V
VDS= 30V
12
0
1
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
C, Capacitance (pF)
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
20
40
60
80
100
120
IRFP4321PbF
1000
ID, Drain-to-Source Current (A)
1000
100
TJ = 175C
10
TJ = 25C
100
1msec
10
10msec
1
Tc = 25C
Tj = 175C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
60
40
20
0
75
100
125
150
175
LIMITED BY PACKAGE
50
1000
190
180
170
160
150
140
-60 -40 -20
5.0
4.0
Energy (J)
100
80
25
10
3.0
2.0
1.0
0.0
ID
13A
20A
BOTTOM 50A
600
TOP
500
400
300
200
100
0
20
40
60
80
100
120
140
DC
160
25
50
75
100
125
150
175
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IRFP4321PbF
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
Ri (C/W)
C
Ci= i/Ri
Ci= i/Ri
(sec)
0.076792 0.000083
0.233645 0.001175
0.179727 0.008326
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
0.01
10
0.05
0.10
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
240
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 50A
200
160
120
80
40
0
25
50
75
100
125
150
175
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IRFP4321PbF
40
ID = 1.0A
ID = 1.0mA
ID = 250A
5.0
30
4.0
IRRM - (A)
6.0
3.0
20
IF = 33A
VR = 128V
10
2.0
TJ = 125C
TJ = 25C
1.0
-75
-50 -25
25
50
75
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
TJ , Temperature ( C )
3200
2800
2400
QRR - (nC)
IRRM - (A)
30
20
10
2000
1600
1200
IF = 50A
VR = 128V
IF = 33A
VR = 128V
800
TJ = 125C
TJ = 25C
TJ = 125C
TJ = 25C
400
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
dif / dt - (A / s)
3200
2800
QRR - (nC)
2400
2000
1600
1200
800
400
0
IF = 50A
VR = 128V
TJ = 125C
TJ = 25C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
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IRFP4321PbF
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
P.W.
Period
VGS=10V
D=
Period
P.W.
+
-
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
ISD
Ripple 5%
DRIVER
VDS
tp
D.U.T
RG
+
V
- DD
IAS
VGS
20V
tp
0.01
I AS
VDS
VDS
90%
+
VDD -
10%
D.U.T
VGS
VGS
Pulse Width < 1s
Duty Factor < 0.1%
td(on)
tr
td(off)
tf
L
DUT
1K
VCC
Vgs(th)
Qgs1 Qgs2
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Qgd
Qgodr
IRFP4321PbF
TO-247AC Package Outline
INTERNAT IONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
135H
57
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/