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I. INTRODUCTION
RANSPORTATION electrification has become a clear tendency owing to lower emission, better vehicle performance, and higher fuel economy than conventional internal
combustion (IC) engine-based vehicles. Over the past decades,
electric vehicles, hybrid electric vehicles, plug-in hybrid electric
vehicles, and fuel-cell vehicles (FCVs) are emerging means of
Manuscript received October 31, 2012; revised January 16, 2013; accepted
February 21, 2013. Date of current version June 6, 2013. This work was supported by the Singapore Ministry of Education Academic Research Fund Tier 1
under Grant R-263-000-627-133. However, any opinions, findings, conclusions,
or recommendations expressed herein are those of the authors and do not necessarily reflect the views of the Singapore Ministry of Education. Recommended
for publication by Associate Editor N. Kar.
The authors are with the Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore (e-mail: a0082351@
nus.edu.sg; eleakr@nus.edu.sg).
Color versions of one or more of the figures in this paper are available online
at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TPEL.2013.2252199
Fig. 1.
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Fig. 2.
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
Fig. 3.
2)
3)
4)
5)
6)
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Vo
(t t0 )
4n Llk
(1)
iS 5 = iS 8 = IS 5 (t0 )
Vo
(t t0 )
8n Llk
(2)
iS 6 = iS 7 = IS 6 (t0 ) +
Vo
(t t0 )
8n Llk
(3)
iD 11 =
Vo
IL lk 2 (t0 )
2
(t t0 ).
n
4n Llk
(4)
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
Fig. 5. Equivalent circuits during different intervals of operation of the proposed converter for the waveforms shown in Fig. 4. (a) Interval 1. (b) Interval 2.
(c) Interval 3. (d) Interval 4. (e) Interval 5. (f) Interval 6. (g) Interval 7. (h) Interval 8. (i) Interval 9. (j) Interval 10. (k) Interval 11.
Vo
Iin
+
(t t2 )
2
4n Llk
(5)
iS 1 = iS 4 =
Vo
(t t2 )
8n Llk
(6)
iS 2 = iS 3 =
Vo
Iin
(t t2 )
2
8n Llk
(7)
iD 10 =
Vo
Iin
2
(t t2 ).
2n 4n Llk
(8)
Vo
Iin
(t t4 )
2
4n Llk
(9)
iS 6 = iS 7 =
Vo
Iin
+
(t t4 )
2
8n Llk
(10)
iD 5 = iD 8 =
Vo
(t t4 )
8n Llk
(11)
iS 11 =
Vo
Iin
+
(t t4 ).
2n 4n2 Llk
(12)
Vo
(t t5 )
4n Llk
iS 6 = iS 7 = Isw ,p eak
iD 5 = iD 8 = ID 2,p eak
iD 12 =
Vo
(t t5 )
8n Llk
Vo
(t t5 )
8n Llk
Vo
Ilk ,p eak
2
(t t5 ).
n
4n Llk
(13)
(14)
(15)
(16)
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Llk =
Vo (d 0.5)
.
4 n Iin fs
(19)
2
vo vin (3 4d)
4n vin
.
16 n Llk fs
(21)
The transformer turns ratio selection is based on conduction losses, which mainly consist of the conduction
losses in the primary switches because they carry higher
currents. Increasing the turns ratio can reduce the maximum voltage across the primary switches, which makes
it possible to use low voltage rating switches with lower
on-state resistance [from (17)]. The leakage inductance of
the transformer Llk decreases with the increase of turnsratio, thus improving the power transferring ability of the
converter [from (21)]. Power transferring capacity is limited by the leakage inductance of the HF transformer. In
addition, when the converter works in the reverse direction to absorb the energy owing to regenerative braking,
smaller leakage inductance will result in smaller duty cycle loss. However, higher turns ratio yields higher switch
RMS current [from (18) and (20)]. Voltage regulation over
varying fuel cell dc bus with varying battery terminal voltage is another concern to be addressed during design. An
optimum turns ratio n = 2.5 and duty ratio d = 0.8 are
selected to achieve low overall conduction losses. Output
voltage can be regulated from 150 to 300 V by modulating the duty ratio from 0.5 to 0.8. Leakage inductance of
Llk = 2.05 H is obtained from (19) for the given values.
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
Vin (d 0.5)
I fs
(23)
(24)
(25)
2
RL Iin
4
(28)
PP ,Con = rP ,on
IP2 ,rm s
2
PS,Con = rS,on IS,rm
s
rP ,on
(2 d)
=
12
2
+ rD ID
,rm s + vD iD
Csnubb er Vp2 fs
+0
2
Csnubb er Vo2 fs
16 n2
(31)
V I fs tf
6
Vo Iin fs tf
12 n
(32)
IL2 lk ,rm s
n2
2
Bm
Vc fs
2u
2
Peddy = Ke fs2 Bm
0
2
2
(2d 1) rD Iin
(11 10d)
rS,on Iin
+
48 n2
48 n2
vD Iin (7 6d)
(30)
+
16 n
where rP ,on and rS,on are the on-resistances of the primary- and
secondary-side switches, respectively. vD is the forward voltage
of the body diode of secondary-side switches.
(34)
(35)
(36)
(37)
(29)
(33)
where rpri and rsec are ohmic resistances of primary and secondary sides of the HF transformer respectively.
The core loss of the boost inductor and the HF transformer
can be calculated by
+ PTr,Copp 2 + Pcap 4.
Pout
Vin Iin Ploss
=
.
Pin
Vin Iin
(39)
These equations are derived on the condition that the antiparallel diode conduction time is quite short and negligible with
the intention to ensure ZCS of primary switches without significant increase in peak current of the switches. However, at light
load, the body diode conduction time is comparatively large and
(18) is not valid any more. Due to extended body diode conduction, the output voltage is boosted to higher value than the
nominal boost converter. Equation (18) is modified to
Vo =
2n Vin
(1 d d )
(40)
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where d is given by
d = d 0.5
4 n Iin Llk fs
.
Vo
(41)
Fig. 6. Simulation waveforms: (a) input boost inductor currents I(L 1 ), I(L 2 ),
input current Iin , series inductor currents I(L L l k 1 ) and I(L L l k 2 ), (b) voltages
across output capacitors V C o 1 , V C o 2 , V C o 3 , V C o 4 and output voltage V O , (c)
voltage waveforms V (L L l k 1 ), V (L L l k 2 ), and (d) voltage waveforms V A B
and V C D .
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
TABLE I
COMPARISON OF FOUR BIDIRECTIONAL ISOLATED CONVERTER TOPOLOGIES AT V in = 12 V AND FULL LOAD (1 kW)
Fig. 8.
Laboratory prototype.
TABLE II
MAJOR COMPONENTS PARAMETERS OF THE EXPERIMENTAL PROTOTYPE
Fig. 7 shows simulation waveforms of currents through primary switches I(S1 ), I(S2 ), I(S5 ), and I(S6 ) and secondary
switches I(S9 ), I(S10 ), I(S11 ), and I(S12 ). The negative parts
of these waveforms correspond to currents flowing through their
respective body diodes. ZCS of primary switches are clearly illustrated. I(S1 ), I(S2 ), I(S5 ), and I(S6 ) naturally decrease to
zero owing to secondary-side modulation and then corresponding anti-parallel body diodes conduct before gating signals are
removed which ensures ZCS turn-off of the primary switches.
As shown in current waveforms I(S9 ), I(S10 ), I(S11 ), and
I(S12 ) in Fig. 7(b), the body diodes of switches conduct before
the devices start conducting, confirming ZVS of the secondary-
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Fig. 9. Gating signals of all the switching devices for output power of 500 W at
300 V. (a) Primary-side switches. (b) Secondary-side switches (x-axis: 2 s/div,
y-axis: 10 V/div).
Fig. 10. Experimental results for output power of 500 W at 300 V (x-axis:
2 s/div). (a) and (b) Gate-to-source voltage V g s (10 V/div) and drain-to-source
voltage V d s (50 V/div) across the primary-side MOSFETs and currents through
them (20 A/div). (c) and (d) Gate-to-source voltage V g s (10 V/div) and drainto-source voltage V d s (200 V/div) across the secondary-side MOSFETs and
currents through them (20 A/div).
11(a) and (b). Before turning ON, the voltage across the primary
switch is clamped at Vo /4n = 30 V. When the switch is gated
ON, the current through it is rising at a slope of di/dt = 7.5 A/s
from zero. With this limited di/dt through the primary switch and
low-clamped voltage across it, the turn-on loss (due to overlap of
switch voltage and current during switching transition time) is
low. Considering ZCS turn-off of the primary switches and ZVS
turn-on switching transition loss of the secondary-side switches
mentioned previously, the total switching losses are reduced
enormously. In addition, primary switches of low voltage rating
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
Fig. 11. Experimental results for output power of 250 W at 300 V (x-axis:
2 s/div). (a) and (b) Gate-to-source voltage V g s (10 V/div) and drain-to-source
voltage V d s (50 V/div) across the primary-side MOSFETs and currents through
them (20 A/div). (c) and (d) Gate-to-source voltage V g s (10 V/div) and drainto-source voltage V d s (200 V/div) across the secondary-side MOSFETs and
currents through them (20 A/div).
Fig. 12. Experimental results for output power of 500 W at 300 V (x-axis:
2 s/div). (a) Voltage across the HF transformer v A B and v C D (50 V/div)
and currents through the primary windings iL l k 1 and iL l k 2 (50 A/div). (b)
Currents through the primary-side MOSFETs (20 A/div). (c) Currents through
the secondary-side MOSFETs (20 A/div).
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Fig. 13. Experimental results for output power of 500 W at 300 V (x-axis:
2 s/div): (a) Boost inductor current waveforms iL 1 , iL 2 and input current iin
(2 A/div, 5 s/div). (b) Voltages across output capacitors of CELL 1 (50 V/div,
2 s/div). (c) Scaled voltages across output capacitors of CELL 1 (10 V/div,
5 s/div).
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IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 12, DECEMBER 2013
Pan Xuewei (S12) received the B.E. degree in electronic engineering from the University of Electronic
Science and Technology of China, Chengdu, China,
in 2011. He is currently working toward the Ph.D.
degree in power electronics in the Department of
Electrical and Computer Engineering, National University of Singapore, Singapore.
His research interests include soft-switching methods and modulation techniques for high-frequency
power conversion for renewable energy.