Advanced Power

Electronics Corp. AP9435GM-HF-3

P-channel Enhancement-mode Power MOSFET

Simple Drive Requirement D

Low On-resistance BV DSS -30V
Fast Switching Performance RDS(ON) 50m
G
RoHS-compliant, Halogen-free ID -5.3A
S

Description
D
D
Advanced Power MOSFETs from APEC provide the designer with the best D
D
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9435GM-HF-3 is in the SO-8 package, which is widely used G
S
for commercial and industrial surface-mount applications, and is well S
SO-8 S
suited for low voltage applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -30 V
VGS Gate-Source Voltage +20 V
3
ID at TA=25C Continuous Drain Current -5.3 A
3
ID at TA= 70C Continuous Drain Current -4.7 A
1
IDM Pulsed Drain Current -20 A
PD at TA=25C Total Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/C
TSTG Storage Temperature Range -55 to 150 C
TJ Operating Junction Temperature Range -55 to 150 C

Thermal Data
Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient 50 C/W

Ordering Information
AP9435GM-HF-3TR RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)

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 Advanced Power
Electronics Corp. AP9435GM-HF-3
Electrical Specifications at Tj=25C (unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-5A - - 50 m
VGS=-4.5V, ID=-4A - - 90 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=20V - - 100 nA
2
Qg Total Gate Charge ID=-5.3A - 14.6 - nC
Qgs Gate-Source Charge VDS=-15V - 1.8 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 3.7 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 6.6 - ns
tr Rise Time ID=-1A - 7.7 - ns
td(off) Turn-off Delay Time RG=3.3, VGS=-10V - 22 - ns
tf Fall Time RD=15 - 9.3 - ns
Ciss Input Capacitance VGS=0V - 570 - pF
Coss Output Capacitance VDS=-25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-2.1A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V, - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/s - 11 - nC

Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width < 300s , duty cycle < 2%
3.Surface mounted on 1 in2 copper pad of FR4 board; 125C/W on minimum copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

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 Advanced Power
Electronics Corp. AP9435GM-HF-3
Typical Electrical Characteristics
20 20

T A =25 o C -10V -10V

-7.0V T A =150 o C -7.0V
16 -5.0V 16 -5.0V
-ID , Drain Current (A)

-4.5V -4.5V

-ID , Drain Current (A)

V G =-4.0V V G =-4.0V
12 12

8 8

4 4

0 0
0 1 2 3 4 0 2 4 6 8

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70 1.8

I D = -4A I D = -5A
T A =25C V G = -10V
60
Normalized RDS(ON)

1.4
RDS(ON) (m )

50

40

30 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature
10.00 2

8.00 1.8

T j =150 o T j =25 o C
-VGS(th) (V)

6.00
C 1.6
-IS(A)

4.00 1.4

2.00 1.2

0.00 1
0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

o
-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage vs.

Reverse Diode Junction Temperature

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 Advanced Power
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Typical Electrical Characteristics (cont.)
f=1.0MHz
16 1000

C iss
-VGS , Gate to Source Voltage (V)

12

I D = -5.3A
V DS = -15V

C (pF)
8 100
C oss
C rss

0 10
0 4 8 12 16 20 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (R thja)

Duty factor = 0.5

10

100us
0.2
-ID (A)

0.1
1 1ms 0.1

0.05

10ms PDM

100ms t
0.02
T
0.1
T A =25 o C 1s
0.01 Duty Factor = t/T
Single Pulse Peak Tj = PDM x Rthja + T a
DC Single Pulse
Rthja=125C/W

0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG

-10V
QGS QGD

10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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 Advanced Power
Electronics Corp. AP9435GM-HF-3
Package Dimensions: SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27
e 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L

1. All dimensions are in millimeters.

2. Dimensions do not include mold protrusions.
c

DETAIL A

Marking Information: SO-8

Product: AP9435
Package:
9435GM GM = RoHS-compliant halogen-free SO-8

YWWSSS Date/lot code (YWWSSS)

Y: Last digit of the year
WW: Work week
SSS: Lot code sequence

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