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HomeELECTRONICSVLSI/VHDL/VerilogBackEndProjectsASingleEndedWithDynamicFeedbackControl8TSubthresholdSRAMCell2016

A SINGLE-ENDED WITH DYNAMIC FEEDBACK CONTROL 8T SUB THRESHOLD SRAM CELL

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ASingleEndedWithDynamicFeedbackControl8TSubthresholdSRAMCell
2016
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Abstract:
Subject
Acompletelyuniqueeighttransistor(8T)staticrandomaccessmemorycellwith
improvedinformationstabilityinsubthresholdoperationismeant.Theproposed Re: A SingleEnded With Dynamic Feedback Control 8T Sub threshold SRAM Cell 20
singleended with dynamic feedback control 8T static RAM (SRAM) cell
Message
enhancesthestaticnoisemargin(SNM)forultralowpoweroffer.Itachieveswrite
SNMofone.four_and1.28_asthatofisoarea6Tandreaddecoupled8T(RD
8T),respectively,atthreehundredmV.ThecommonplacedeviationofwriteSNM
for8Tcellisreducedtozero.4_and0.fiftysix_asthatfor6TandRD8T,respectively.Itconjointlypossessesanotherstrikingfeatureof
highreadSNMapairof.thirtythree_,1.23_,andzero.89_asthatof5T,6T,andRD8T,respectively.ThecellhasholdSNMof1.forty
three_,1.twentythree_,and1.05_asthatof5T,6T,andRD8T,respectively.Thewritetimeisseventyone%lesserthanthatofsingle
endedasymmetrical8Tcell.Theproposed8Tconsumeslesswritepowerzero.72_,0.6_,and0.85_asthatof5T,6T,andisoareaRD
8T, respectively. The read power is zero.forty nine_ of 5T, zero.forty eight_ of 6T, and zero.sixty four_ of RD8T The facility/energy
consumptionofonekb8TSRAMarraythroughoutbrowseandwriteoperationsiszero.fortythree_and0.34_,respectively,of1kb6T
array.Theseoptionsenableultralowpowerapplicationsof8T.

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