PD - 94497

SMPS MOSFET IRF8010

Applications
High frequency DC-DC converters HEXFET Power MOSFET
UPS and Motor Control
VDSS RDS(on) max ID
Benefits 100V 15m 80A
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Typical RDS(on) = 12m
TO-220AB

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 80
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 57 A
IDM Pulsed Drain Current 320
PD @TC = 25C Power Dissipation 260 W
Linear Derating Factor 1.8 W/C
VGS Gate-to-Source Voltage 20 V
dv/dt Peak Diode Recovery dv/dt 16 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 1.1(10) Nm (lbfin)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.57
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

Notes through are on page 8

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IRF8010
Static @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 12 15 m VGS = 10V, ID = 45A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
IDSS Drain-to-Source Leakage Current 20 A VDS = 100V, VGS = 0V
250 VDS = 100V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage 200 nA VGS = 20V
Gate-to-Source Reverse Leakage -200 VGS = -20V

Dynamic @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 82 V VDS = 25V, ID = 45A
Qg Total Gate Charge 81 120 ID = 80A
Qgs Gate-to-Source Charge 22 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 26 VGS = 10V
td(on) Turn-On Delay Time 15 VDD = 50V
tr Rise Time 130 ID = 80A
td(off) Turn-Off Delay Time 61 ns RG = 39
tf Fall Time 120 VGS = 10V
Ciss Input Capacitance 3830 VGS = 0V
Coss Output Capacitance 480 VDS = 25V
Crss Reverse Transfer Capacitance 59 pF = 1.0MHz
Coss Output Capacitance 3830 VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss Output Capacitance 280 VGS = 0V, VDS = 80V, = 1.0MHz
Coss eff. Effective Output Capacitance 530 VGS = 0V, VDS = 0V to 80V

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy 310 mJ
IAR Avalanche Current 45 A
EAR Repetitive Avalanche Energy 26 mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current 80 MOSFET symbol D

(Body Diode) A showing the

ISM Pulsed Source Current 320 integral reverse G

S
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 80A, VGS = 0V
trr Reverse Recovery Time 99 150 ns TJ = 150C, IF = 80A, VDD = 50V
Qrr Reverse RecoveryCharge 460 700 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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 IRF8010

10000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V

ID, Drain-to-Source Current (A)

10V
ID, Drain-to-Source Current (A)

1000 6.0V 6.0V

5.5V 5.5V
5.0V 5.0V
4.5V
100 4.5V
BOTTOM 4.0V BOTTOM 4.0V
100

4.0V
10
10
4.0V

1
20s PULSE WIDTH
20s PULSE WIDTH Tj = 175C
Tj = 25C 1
0.1
0.1 1 10 100
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.5
I D = 80A

T J = 175C 3.0
ID, Drain-to-Source Current ()

RDS(on) , Drain-to-Source On Resistance

2.5
100
(Normalized)

2.0

1.5
T J = 25C
10
1.0

VDS = 50V 0.5

20s PULSE WIDTH
1 V GS = 10V
0.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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IRF8010

100000 12
VGS = 0V, f = 1 MHZ ID= 80A
Ciss = C gs + Cgd, C ds SHORTED
VDS= 80V

VGS , Gate-to-Source Voltage (V)

Crss = Cgd 10
Coss = Cds + Cgd VDS= 50V
10000
VDS= 20V
C, Capacitance(pF)

Ciss 8

1000 6

Coss
4

100
Crss 2

0
10
0 20 40 60 80 100
1 10 100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000

OPERATION IN THIS AREA

ID, Drain-to-Source Current (A)

1000 LIMITED BY R DS(on)

100
I SD , Reverse Drain Current (A)

TJ = 175 C 100

10 100sec

10
1msec
T J= 25 C
1
1 Tc = 25C 10msec
Tj = 175C
Single Pulse
V GS = 0 V
0.1
0.1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000
V SD,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF8010

80
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
60
RG
+
-VDD
ID , Drain Current (A)

10V
Pulse Width 1 s
40
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

20
VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
(Z thJC )

1
Thermal Response

D = 0.50

P DM
0.20
0.1
0.10 t1

0.05 t2

SINGLE PULSE
0.02 Notes:
0.01 (THERMAL RESPONSE)
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF8010

15V 600
ID
TOP 18A
500 32A
L DRIVER BOTTOM 45A
VDS

EAS , Single Pulse Avalanche Energy (mJ)

400
RG D.U.T +
V
- DD
IAS A
20V 300
tp 0.01

Fig 12a. Unclamped Inductive Test Circuit 200

100
V(BR)DSS
tp
0
25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

I AS Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG
50K
.2F
10 V 12V
.3F
QGS QGD +
V
D.U.T. - DS

VG VGS

3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRF8010

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-

- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET Power MOSFETs

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IRF8010
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 3.78 (.149) -B-
2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)
2.62 (.103) 4.20 (.165)
-A- 1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045) LEAD ASSIGNMENTS
MIN 1 - GATE
1 2 3 2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530) 4.06 (.160)
3.55 (.140)

0.93 (.037) 0.55 (.022)

3X 3X
0.69 (.027) 0.46 (.018)
1.40 (.055)
3X
1.15 (.045) 0.36 (.014) M B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB Part Marking Information

EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY A
LOT CODE 9B1M INTERNATIONAL PART NUMBER
RECTIFIER
IRF1010
LOGO 9246
9B 1M DATE CODE
ASSEMBLY
(YYWW)
LOT CODE
YY = YEAR
WW = WEEK
Notes:
Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%.
max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25C, L = 0.31mH, RG = 25, as Coss while VDS is rising from 0 to 80% VDSS.
IAS = 45A.
Calculated continuous current based on maximum allowable
ISD 45A, di/dt 110A/s, VDD V(BR)DSS,
junction temperature. Package limitation current is 75A.
TJ 175C.

TO-220 package is not recommended for Surface Mount Application.

Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/02
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