BB 112

Silicon Variable Capacitance Diode BB 112

For AM tuning applications

Specified tuning range
1 8.0 V

Type Marking Ordering Code Pin Configuration Package1)

BB 112 Q62702-B240 TO-92

Maximum Ratings
Parameter Symbol Values Unit
Reverse voltage VR 12 V
Forward current, TA 60 C IF 50 mA
Operating temperature range Top 55 + 85 C

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 07.94

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Electrical Characteristics
at TA = 25 C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse current IR nA
VR = 10 V 50
VR = 10 V, TA = 60 C 200
Diode capacitance, f = 1 MHz CT pF
VR = 1 V 440 470 520
VR = 8 V 17.5 34
Capacitance ratio CT1 15
VR = 1 V, 8 V CT8
Series resistance rs 1.4
VR = 1 V, f = 0.5 MHz
Q factor Q 480
VR = 1 V, f = 0.5 MHz
Temperature coefficient TCC 500 ppm/K
of diode capacitance
VR = 1 V, f = 1 MHz
Capacitance matching CT 3 %
VR = 1 8 V CT

Semiconductor Group 2
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Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR)

Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction

capacitance TCC = f (VR)

Semiconductor Group 3