® STTH8003CY

HIGH FREQUENCY SECONDARY RECTIFIERS

MAJOR PRODUCTS CHARACTERISTICS

IF(AV) 2x40 A
VRRM 300 V
VF (max) 1V
trr (max) 60 ns

FEATURES AND BENEFITS

n COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE. A2
n ULTRA-FAST, SOFT AND NOISE-FREE K
RECOVERY. A1
n HIGH OPERATING TEMPERATURE THANKS
TO LOW LEAKAGE CURRENT.

DESCRIPTION
Dual rectifiers suited for Switch Mode Power Max247
Supply and high frequency DC to DC converters.
Packaged in Max247, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 300 V

IF(RMS) RMS forward current 50 A

IF(AV) Average forward cur- Tc = 105°C Per diode 40 A

rent δ = 0.5 Per device 80

IFSM Surge non repetitive forward current tp = 10 ms 400 A

sinusoidal

IRSM Non repetitive avalanche current tp = 100 µs 4 A

square

Tstg Storage temperature range -55 +175 °C

Tj Maximum operating junction temperature + 175 °C

September 2002 - Ed: 3A 1/5

STTH8003CY
THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-c) Junction to case thermal resistance Per diode 0.8 °C/W
Total 0.5
Rth (c) Coupling 0.2 °C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameter Tests Conditions Min. Typ. Max. Unit

IR * Reverse leakage current VR = 300 V Tj = 25°C 80 µA

Tj = 125°C 80 800

VF ** Forward voltage drop IF = 40 A Tj = 25°C 1.25 V

Tj = 125°C 0.85 1
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.75 x IF(AV) + 0.0062 IF(RMS)2

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol Tests Conditions Min. Typ. Max. Unit

trr IF = 0.5 A Irr = 0.25 A IR = 1 A Tj = 25°C 50 ns

IF = 1 A dIF/dt = - 50 A/µs VR = 30 V 60

IRM Vcc = 200 V IF = 40 A dIF/dt = -200 A/µs Tj = 125°C 13 A

Sfactor 0.3 -

tfr IF = 40 A dIF/dt = 200 A/µs, Tj = 25°C 450 ns

VFR = 1.1 x VF max
VFP 5 V

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Fig. 1: Conduction losses versus average current Fig. 2: Forward voltage drop versus forward
(per diode) current (per diode)

P(W) IFM(A)
55 200
δ = 0.5
50 Tj=125°C
δ = 0.2 100 Typical values
45
δ = 0.1
40 δ=1
Tj=125°C
Maximum values
35 δ = 0.05 Tj=25°C
Maximum values
30
25 10
20
15 T
10
5 IF(av) (A) VFM(V)
δ=tp/T tp
0 1
0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus
junction to case versus pulse duration dIF/dt (90% confidence, per diode)

Zth(j-c)/Rth(j-c) IRM(A)
1.0 25
VR=200V
Tj=125°C IF=2 x IF(av)

0.8 20 IF=IF(av)

δ = 0.5
0.6 15
IF=0.5 x IF(av)
δ = 0.2
0.4 10
δ = 0.1 T
0.2 5
Single pulse
tp(s)
δ=tp/T tp dIF/dt(A/µs)
0.0 0
1E-3 1E-2 1E-1 1E+0 0 50 100 150 200 250 300 350 400 450 500

Fig. 5: Reverse recovery time versus dIF/dt Fig. 6: Softness factor (tb/ta) versus dIF/dt
(90% confidence, per diode) (typical values, per diode)

trr(ns) S factor
180 0.6
VR=200V VR=200V
160 Tj=125°C Tj=125°C
0.5
140
120 IF=2 x IF(av) 0.4
100 IF=IF(av)
0.3
80
60 0.2
40 IF=0.5 x IF(av)
0.1
20 dIF/dt(A/µs) dIF/dt(A/µs)
0 0.0
0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500

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STTH8003CY

Fig. 7: Relative variation of dynamic parameters Fig. 8: Transient peak forward voltage versus
versus junction temperature (Reference: Tj = 125°C) dIF/dt (90% confidence, per diode)

2.4 VFP(V)
2.2 10
2.0 S factor
IF=IF(av)
Tj=125°C
1.8 8
1.6
1.4
1.2 6
1.0
0.8 IRM 4
0.6
0.4 2
0.2 Tj(°C)
dIF/dt(A/µs)
0.0 0
25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500

Fig. 9: Forward recovery time versus dIF/dt

(90% confidence, per diode)

tfr(ns)
500
IF=IF(av)
VFR=1.1 x VFmax
Tj=125°C
400

300

200

100
dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500

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 STTH8003CY
PACKAGE MECHANICAL DATA
Max247

DIMENSIONS
REF. Millimeters Inches
Min. Max. Min. Max.
A 4.70 5.30 0.185 0.209
E A
A1 2.20 2.60 0.087 0.102
b 1.00 1.40 0.038 0.055
b1 2.00 2.40 0.079 0.094
D b2 3.00 3.40 0.118 0.133
c 0.40 0.80 0.016 0.031
D 19.70 10.30 0.776 0.799
L1
e 5.35 5.55 0.211 0.219
A1
E 15.30 15.90 0.602 0.626
b1
L L 14.20 15.20 0.559 0.598
b2
L1 3.70 4.30 0.146 0.169

e b c

Ordering code Marking Package Weight Base qty Delivery mode

STTH8003CY STTH8003CY Max247 4.4 g. 30 Tube

n Cooling method: C
n Epoxy meets UL94,V0

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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