ENEE 416: Integrated Circuit (IC) Fabrication Lab Fall 2005

Created by: Alireza Modafe

Session 8
1. Metal Photolithography Aluminum
2. Aluminum Etching Deposition

• Starting Wafer
o Material: Silicon
o Size: 4” Photolithography
o Crystal Orientation: <100>
o Doping: p-type
o Resistivity: 16-20 Ω.cm
• Last Processes Aluminum
o Step 1: Field Oxide Growth Etching
o Step 2: Active Area Photolithography
o Step 3: Field Oxide Etching
o Step 4: Gate Oxide Growth
o Step 5: Polysilicon Deposition
o Step 6: Gate Photolithography Photoresist
o Step 7: Polysilicon Etching Removal
o Step 8: Gate Oxide Etching
o Step 9: n+ Deposition and Pre-Diffusion
o Step 10: Intermediate Oxide Growth and n+ Drive-in Silicon
o Step 11: Aluminum Deposition (8000 Å)
Field Oxide
• Mask Gate Oxide
o Mask No.: Mask #4 (METL)
Polysilicon
o Mask Tone: Dark Field
o Defines: Metal Lines Intermediate Oxide
n+ Diffusion
• Chemicals
o DI Water Photoresist
o Solvents: Acetone, Methanol, 2-Isopropanol (IPA) Aluminum
o Adhesion Promoter: Hexamethyldisizilane (HMDS)
o Photoresist: Shipley 1813
o Developer: Shipley 352
o Aluminum Etchant Type A: Phosphoric Acid, Nitric Acid, Acetic Acid, Water
(16:1:1:2)
• Tools and Equipment
o Wafer Handling: Tweezers
o Wafer Cleaving and Labeling: Diamond Tip
o Glassware: Developer Dish, DI Water Rinse Beaker, Teflon Beaker
o Waste Bottles: Proper Waste Bottle for Each Chemical
o Photoresist Coating: Spinner
o Photoresist Baking: Hotplate
o Mask Alignment and Contact Printing: Contact Aligner
o Inspection: High-Magnification Microscope
o Thickness Measurement: Stylus Profilometer
• Process Steps (for details refer to the standard operating procedures handout)
o Note: Measure Aluminum Thickness on Control Wafer.
o Dehydration: Hotplate, 120 °C, 10 min
ENEE 416: Integrated Circuit (IC) Fabrication Lab Fall 2005
Created by: Alireza Modafe

o HMDS: Dispense to Cover the Wafer, Wait 1 min, Spin at 3000 rpm, 30 s
o Shipley 1813: Dispense to Cover 2/3 of the Wafer, Spin at 3000 rpm, 30 s
o Soft Bake: Hotplate, 100 °C, 1 min
o Mask Alignment: Alignment to Contact Alignment Marks
o Exposure: 180-200 mJ/cm2
o Development: Shipley 352, 30-40 s, Mild Agitation, Rinse with DI Water, Spin
Dry
o Inspection: Microscope, Record the Minimum Resolved Line Width
o Hard Bake: Hotplate, 120 °C, 10 min
o Inspection: Measure Photoresist Thickness with Profilometer
o Thickness Measurement on Control Wafer: Calculate Etch Rate
o Aluminum Etching: Aluminum Etchant Type A, at 50 °C, Required Time,
Rinse with DI Water, Spin Dry
o Inspection: Microscope, Measure Aluminum/Photoresist Thickness with
Profilometer
o Photoresist Removal: Strip Photoresist in Acetone, Rinse with Methanol, IPA,
and DI Water, Spin Dry
o Inspection: Microscope, Record the Minimum Resolved Line Width, Measure
Aluminum Thickness with Profilometer