2SB649, 2SB649A

Silicon PNP Epitaxial

Application

Low frequency power amplifier complementary pair with 2SD669/A

Outline

TO-126 MOD

1. Emitter
2. Collector
3. Base
1
2
3
2SB649, 2SB649A

Absolute Maximum Ratings (Ta = 25°C)

Ratings
Item Symbol 2SB649 2SB649A Unit
Collector to base voltage VCBO –180 –180 V
Collector to emitter voltage VCEO –120 –160 V
Emitter to base voltage VEBO –5 –5 V
Collector current IC –1.5 –1.5 A
Collector peak current I C(peak) –3 –3 A
Collector power dissipation PC 1 1 W
1
PC * 20 20 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C

2
 2SB649, 2SB649A

Electrical Characteristics (Ta = 25°C)

2SB649 2SB649A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO –180 — — –180 — — V I C = –1 mA, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO –120 — — –160 — — V I C = –10 mA, RBE = ∞
breakdown voltage
Emitter to base V(BR)EBO –5 — — –5 — — V I E = –1 mA, IC = 0
breakdown voltage
Collector cutoff current I CBO — — –10 — — –10 µA VCB = –160 V, IE = 0
1
DC current transfer ratio hFE1* 60 — 320 60 — 200 VCE = –5 V,
I C = –150 mA
hFE2 30 — — 30 — — VCE = –5 V,
I C = –500 mA*2
Collector to emitter VCE(sat) — — –1 — — –1 V I C = –500 mA,
saturation voltage I B = –50 mA
Base to emitter voltage VBE — — –1.5 — — –1.5 V VCE = –5 V,
I C = –150 mA
Gain bandwidth product f T — 140 — — 140 — MHz VCE = –5 V,
I C = –150 mA
Collector output Cob — 27 — — 27 — pF VCB = –10 V, IE = 0,
capacitance f = 1 MHz
Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows.
2. Pulse test

B C D
2SB649 60 to 120 100 to 200 160 to 320
2SB649A 60 to 120 100 to 200 —

3
2SB649, 2SB649A

Maximum Collector Dissipation

Curve
Area of Safe Operation
30
–3
Collector power dissipation PC (W)

ICmax
(–13.3 V, –1.5 A)
–1.0

Collector current IC (A)

20 (–40 V, –0.5 A)
–0.3

DC Operation (TC = 25°C)

–0.1
10
(–120 V, –0.038 A)
–0.03
(–160 V, –0.02 A)
2SB649 2SB649A
–0.01
0 50 100 150 –1 –3 –10 –30 –100 –300
Case temperature TC (°C) Collector to emitter voltage VCE (V)

Typical Output Characteristics Typical Transfer Characteristics

–1.0 –500
.0 TC = 25°C
.5

––54.5 VCE = –5 V
–5

.0
–4 .5
Collector current IC (mA)

–0.8 –3
Collector current IC (A)

PC

0 –100
–3.
=

Ta = 75°C
– .5
20

–25
25
W

–0.6
–2.0

–1.5
–0.4 –10
–1.0

–0.2 –0.5 mA

IB = 0
–1
0 –10 –20 –30 –40 –50 0 –0.2 –0.4 –0.6 –0.8 –1.0
Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

4
 2SB649, 2SB649A

DC Current Transfer Ratio Collector to Emitter Saturation

vs. Collector Current Voltage vs. Collector Current
350 –1.2

Collector to emitter saturation voltage

VCE = –5V IC = 10 IB
350 Ta = 75°C
DC current transfer ratio hFE

–1.0

250
25°C –0.8

VCE(sat) (V)
200
–0.6
150 –25°C

5°C
–0.4

=7
100

Ta
–0.2 –25
50 25

0 –0
–1 –10 –100 –1,000 –1 –10 –100 –1,000
Collector current IC (mA) Collector current IC (mA)

Base to Emitter Saturation Voltage Gain Bandwidth Product

vs. Collector Current vs. Collector Current
–1.2 240
IC = 10 IB VCE = –5 V
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage

–1.0 200

–25°
C
–0.8 Ta = 160
25
VBE(sat) (V)

–0.6 75 120

–0.4 80

–0.2 40

–0 0
–1 –10 –100 –1,000 –10 –30 –100 –300 –1,000
Collector current IC (mA) Collector current IC (mA)

5
2SB649, 2SB649A

Collector Output Capacitance vs.

Collector to Base Voltage
200
f = 1 MHz

Collector output capacitance Cob (pF)

IE = 0
100

50

20

10

2
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)

6
 Unit: mm

8.0 ± 0.5 2.7 ± 0.4

φ 3.1 +0.15
–0.1

0°

12
12

0°

11.0 ± 0.5
2.3 ± 0.3

3.7 ± 0.7
120°

1.1

15.6 ± 0.5
0.8

2.29 ± 0.5 2.29 ± 0.5 0.55 1.2

Hitachi Code TO-126 Mod

JEDEC —
EIAJ —
Weight (reference value) 0.67 g
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Stra§e 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.