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Parseval's Theorem1:
The mean square value of a random variable v(t) or i(t) is related to its (one-sided) Power
Spectral Density Sv(f) or Si(f) by
∞ ∞
2 2
v (t ) = ∫ Sv ( f ) df and i (t ) = ∫ S ( f ) df
i
0 0
White Noise
For "white €
noise" sources including the thermal noise of resistors or shot noise associated
with pn junctions, the power spectra are independent of frequency:
Sv(f) Si(f)
4kTR 2qI
f f
Resistor Thermal Noise Shot Noise
Power Spectrum Power Spectrum
v1 (t )v2 (t )
vs2 (t ) = v12 (t ) + v22 (t ) + 2C12 v12 (t )v22 (t ) with C12 = = correlation coefficient
v12 (t )v22 (t )
€ 1
R. D. Thornton, D. Dewitt, E. R. Chenette and P. E. Gray, Characteristics and
Limitations of Transistors, SEEC Vol. 4, Wiley: 1966.
1 RCJ - 8/26/07
Overview of Noise Calculations
C12 represents a measure of the correlation between v1 and v2, and -1 ≤ C12 ≤ +1. For
uncorrelated noise sources, C12 = 0, and
2
For uncorrelated noise sources : [ ]
v s2 (t ) = v1 (t ) + v2 (t ) = v12 (t ) + v22 (t )
R
vn2 2
R1 R R2
1
vo vo
Series connection:
vo = v n1 + vn2 where vn12 = 4kTR1B and 2
v n2 = 4kTR2 B
Since the resistors are physically independent,
we expect the individual noise sources to be uncorrelated, and
2
vo2 = (v n1 + vn2 ) = vo12 + v o2
2
= 4kTR1B + 4kTR2 B = 4kT ( R1 + R2 ) B
Parallel connection:
R2 R1
€ vo = v n1 + vn2
R1 + R2 R1 + R2
Again, assuming the individual noise sources to be uncorrelated,
2
2
R2 R1 2
R2 2 2 R1 2
v = v n1
o + vn2 = vo1 + v o2
R1 + R2 R1 + R2 R1 + R2 R1 + R2
R1 R22 + R12 R2 R1 R2
vo2 = 4kTB 2
= 4kTB
R1 + R2
(
= 4kT R1 R2 B )
(R + R )
1 2
2 RCJ - 8/26/07
Overview of Noise Calculations
2
Svo ( f ) = Svi ( f ) H ( f )
€ Vo ( s) 1 2 1
Svi = 4kTR H (s ) = = H( f ) = 2
Vi ( s) 1+ sRC 1+ (2πRCf )
4kTR ∞
4kTR kT
Svo ( f ) = 2
vo2 = ∫ 2
df =
1+ (2πRCf ) 0 1+ (2πRCf ) C
kT C 1 π
ENB = = = fo
4kTR 4RC 2
€ 3 RCJ - 8/26/07