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DEPARTMENT OF
ELECTRONICS AND INSTRUMENTATION ENGINEERING
QUESTION BANK
VII SEMESTER
EC6601-VLSI DESIGN
Regulation – 2013
Academic Year 2018– 2019
Prepared by
Mr.K.R.Ganesh, Assistant Professor(O.G)/EIE
Ms. S.Vanila , Assistant Professor(Sr.G)/EIE
UNIT I - MOS TRANSISTOR PRINCIPLE
NMOS and PMOS transistors, Process parameters for MOS and CMOS, Electrical properties of
CMOS circuits and device modeling, Scaling principles and fundamental limits, CMOS inverter
scaling, propagation delays, Stick diagram, Layout diagrams
PART – A
S.N
Questions BT Level Competence
o
1 List out lambda based design rules used for layout. BTL- 1 Remember
2 Define body bias effect. BTL- 1 Remember
3 What is Velocity saturation effect? BTL- 1 Remember
4 What is the need for demarcation line? BTL- 1 Remember
5 State channel length modulation. Write down the equation BTL- 1 Remember
for describing the channel length modulation effect in NMOS
transistors.
6 State the 3 modes involved in the operation of an BTL- 1 Remember
enhancement transistor.
7 Express about propagation delay of a CMOS inverter. BTL- 2 Understand
8 Differentiate enhancement and depletion mode devices. BTL- 2 Understand
9 Give the types of scaling in CMOS technology. BTL- 2 Understand
10 Compare the effect of scaling on MOSFET device BTL- 2 Understand
parameters.
11 Define noise margin. Illustrate how it can be obtained from BTL- 3 Apply
the transfer characteristics of a CMOS Inverter.
12 What is latch up? How to prevent Latchup? BTL- 3 Apply
13 Draw the DC transfer characteristics of CMOS inverter. BTL- 3 Apply
14 Point out the types of oxidation. BTL- 4 Analyze
15 Why nMOS transistor is selected as pull down transistor? BTL- 4 Analyze
16 Mention the non-ideal IV effects of MOS transistor. BTL- 4 Analyze
17 Predict the factors influencing the drain current. BTL- 5 Evaluate
18 Compare CMOS and Bipolar technologies. BTL- 5 Evaluate
19 Develop a stick diagram and layout for CMOS inverter. BTL- 6 Create
20 If the nominal threshold voltage of NMOS transistor in an BTL- 6 Create
180nm process is 0.4V and doping level is 8x1017 cm-3.
What is the body voltage?
PART B
1 (i) Describe the equation for source to drain current
in the three regions of operation of a MOS (7) BTL-1 Remember
transistor and draw the VI characteristics.
(ii) Describe in detail about body effect and its
effect in MOS device. (6) BTL-1 Remember
ii) List the various application of dynamic CMOS logic. (6) BTL-1 Remember
3. i) Explain the static and dynamic power dissipation in
CMOS circuits with necessary diagrams and (7)
expressions. BTL-1 Remember
ii) Derive an nMOS inverter pair delay whose transistor
size is 4:1. (6)
4. Describe the following concepts:
(i) RC delay models. (3)
(i) Elmore delay model. (3) BTL-1 Remember
(ii) Linear delay model. (3)
(iv) Logical effort delay model. (4)
5. i) Compare static and dynamic logic circuit with
example. (7) BTL-2 Understand
BTL-5 Evaluate
(7)
Obtain the logical effort and path efforts of the given
circuit.
2. Design a four input NAND gate and obtain its delay
during the transition from high to Low. BTL-6 Create
(15)
3. Sketch a transistor-level schematic for a compound
CMOS logic gate for each of the following functions:
a) Y =(ABC +D)’
(5) BTL-6 Create
b) Y =(AB +C) · D)’
(5)
c) Y =AB +C · (A +B))’
(5)
4. An NMOS transistor is used to charge a large capacitor,
as shown in Figure
a. Determine the tpLH of this circuit, assuming an ideal
step from 0 to 2.5V at the input node.
b. Assume that a resistor RS of 5 kohm is used to
discharge the capacitance to ground. Determine L. tpHL.
c. Determine how much energy is taken from the supply
during the charging of the capacitor. How much of this is
dissipated in M1. How much is dissipated in the pull-
down resistance during discharge? How does this change
when RS is reduced to 1 kohm. (15) BTL-5 Evaluate
18. Compare and contrast synchronous design and asynchronous BTL-5 Evaluate
design.
19. Develop a switch level schematic of multiplexer based NMOS BTL-6 Create
latch using NMOS only pass transistors.
20. Generalize the peculiarity of a CAM. BTL-6 Create
PART B
1. (i) Describe the architecture of an N-word memory. (7)
(ii) Describe the operation of various memory BTL-1
Remember
peripheral circuitries. (6)
2. (i) Describe the Bi-stability principle associated with
static latches and registers. (7)
(ii) Examine the differences between Static and Dynamic BTL-1 Remember
Memory. (6)
3. (i) What are the different approaches to reduce power
dissipation in memories? (7)
(ii) What are the challenges involved in an asynchronous (6) BTL-1 Remember
design? Can these challenges be overcome using a
self-timed logic?
4. (i) What is the drawback of transmission gate register? (7)
And What is the approach to overcome it?
(ii) Describe the operation of a Dynamic Transmission (6) BTL-1 Remember
Gate Edge Triggered Register
5. (i) Illustrate the impact of clock skew and jitter on the (7)
performance of a sequential system
Understand
(ii) Discuss about the basic concept of clock synthesis and (6) BTL-2
synchronization using Phase –Locked loop.
6. (i) Distinguish various clocking strategies used in chip (7)
design.
BTL-2 Understand
(ii) How can one design a register that is insensitive to (6)
clock-skew?
7. (i) Summarize the concept and implementation of (7)
synchronizers and arbiters.
BTL-2 Understand
(ii) How can we build latches using multiplexers? Discuss (6)
their operation in detail.
8. Discuss about CMOS register concept and design master- (13) BTL-2 Understand
slave triggered register, Explain its operation with
overlapping periods.
9. (i) Draw and explain the operation of conventional,
pulsed and resettable latches. (7)
(ii) Explain the operation of True single phase clocked BTL-3 Apply
register with a neat diagram. (6)
10. Explain in detail about various static latches and registers. (13) BTL-4 Analyze
11. Explain in detail various pipelining approaches to optimize
sequential circuits.
(13) BTL-4 Analyze
PART-C
1. (i) Prove the equation:
PART-C
1. (i) When adding two unsigned numbers, a carry-
out of the final stage indicates an overflow.
When adding two signed numbers in two’s
complement format, overflow detection is
(8) BTL-6 Create
slightly more complex. Develop a Boolean
equation for overflow as a function of the most
significant bits of the two inputs and the
output.
(ii) Show how the layout of the parity generator of
given Figure can be designed as a linear
column of XOR gates with a tree-routing
channel.