EE C245 – ME C218

Introduction to MEMS Design

Fall 2007
Prof Clark T
Prof. T.-C.
C Nguyen
Dept of Electrical Engineering & Computer Sciences
Dept.
University of California at Berkeley
Berkeley,
y CA 94720

L t
Lecture 11:
11 MMechanical
h i l Properties
P ti
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 1
 Lecture Outline

• Reading:
g Senturia, Chpt.
p 8
• Lecture Topics:
ª Stress, strain, etc., for isotropic materials
ª Thin films: thermal stress,
stress residual stress
stress, and stress
gradients
p
ª Internal dissipation
ª MEMS material properties and performance metrics

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 2

 Vertical Stress Gradients
• Variation of residual stress in the direction of film growth
• Can warp released structures in z-direction

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 3

 Elasticity

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 4

 Normal Stress (1D)
If the force acts
normal to a
surface then the
surface,
stress is called a
normal stress

z
σz

σy
∆z σx y
∆x
x ∆y
Differential
Diff ti l
volume element
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 5
 Strain (1D)

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 6

 The Poisson Ratio

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 7

 Shear Stress & Strain (1D)

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 8

 2D and 3D Considerations
• Important assumption: the
differential volume element
is in static equilibrium
lb → no
net forces or torques (i.e.,
rotational movements)
ª Every σ must have an
equal σ in the opposite
di
direction
ti on ththe other
th
side of the element
ª For no net torque,
q , the
shear forces on
different faces must Stresses acting on a
also be matched as differential volume element
follows:
τxy = τyx τxz = τzx τyz = τxy
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 9
 2D Strain
• In general, motion consists of
ª rigid-body displacement (motion of the center of mass)
ª rigid-body
rigid body rotation (rotation about the center of mass)
ª Deformation relative to displacement and rotation

Area element
experiences both
di l
displacement and
d
deformation

• Must
M workk with
i h displacement
di l vectors
• Differential definition u x ( x + Δ x ) − u x ( x ) ∂u x
of
f axial
xi l str
strain:
in: εx = =
Δx ∂x
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 10
 2D Shear Strain

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 11

 Ex: Volume Change for Uniaxial Stress
Stresses
acting on a
differential
volume
element

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 12

 Isotropic Elasticity in 3D
• Isotropic = same in all directions
• The complete
p stress-strain relations for an isotropic
p elastic
solid in 3D: (i.e., a generalized Hooke’s Law)

1
[
ε x = σ x −ν σ y + σ z
E
( )] 1
γ xy = τ xy
G
1
E
[
ε y = σ y − ν (σ z + σ x ) ] 1
γ yz = τ yz
G
1
[
ε z = σ z −ν σ x + σ y
E
( )] 1
γ zx = τ zx
G
Basically, add in off-axis strains from
normall stresses in
i other
h directions
di i

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 13

 Important Case: Plane Stress
• Common case: very thin film coating a thin, relatively rigid
substrate (e.g., a silicon wafer)

• At regions more than 3 thicknesses from edges

edges, the top
surface is stress-free → σz = 0
• Get two components
p of
f in-plane
p stress:

ε x = (1 E )[σ x − ν (σ y + 0)]
ε y = (1 E )[σ y − ν (σ x + 0)]
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 14
 Important Case: Plane Stress (cont.)
• Symmetry in the xy-plane → σx = σy = σ
• Thus, the in-plane
p strain components
p are: εx = εy = ε
where
σ σ
ε x = (1 E )[σ − νσ ] = =
[ E (1 − ν )] E′
and where

∆ E
Biaxial Modulus = E′ =
1 −ν

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 15

 Edge Region of a Tensile (σ>0) Film

Net non-zero in- At free edge, Film must

plane force (that in-plane force be bent
we just analyzed)
l d) must be zero back, here

There s no Poisson
There’s
contraction, so
the film is slightly
thicker here
thicker,

Discontinuity of stress Peel forces that

at the attached corner can p
peel the film
→ stress concentration
i off the surface

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 16

 Linear Thermal Expansion
• As temperature increases, most solids expand in volume
• Definition: linear thermal expansion coefficient

Linear thermal ∆ dε x
expansion coefficient = αT = [[Kelvin-1]
dT
Remarks:
• αT values tend to be in the 10-6 to 10-7 range
• Can capture the 10-6 by using dimensions of μstrain/K,
where 10-66 K-11 = 1 μstrain/K
• In 3D, get volume thermal ΔV
expansion
expans on coeff
coefficient
c ent = 3α T ΔT
V
• For moderate temperature excursions, aT can be treated as
a constant
t t of
f the
th material,
t i l b butt iin actuality,
t lit it is
i a f
function
ti
of temperature
EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 17
 αT As a Function of Temperature

[Madou, Fundamentals
of Microfabrication,
CRC Press, 1998]

• Cubic symmetry implies that α is independent of direction

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 18
 Thin-Film Thermal Stress
Thin Film (αTf)

Substrate
much thicker
Silicon Substrate (αTs = 2.8 x 10-6 K-1) than thin film

• Assume film is deposited stress-free at a temperature Td,

then
h the
h whole
h l thing
h is cooled
l d to room temperature Tr
• Substrate much thicker than thin film → substrate dictates
the amount of contraction for both it and the thin film

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 19

 Linear Thermal Expansion

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 MEMS Material Properties

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 21

 Material Properties for MEMS

√(E/ρ) is
acoustic
c ustic
velocity

[Mark Spearing, MIT]

EE C245: Introduction to MEMS Design Lecture 11 C. Nguyen 10/2/08 22
 Young’s Modulus Versus Density

Lines of constant
acoustic velocity

[Ashby, Mechanics
of Materials,,
Pergamon, 1992]

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