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Novel methodology for the constrained multi-objective optimization of ALD reactor models.
Analysis of the manufacture of ZnO thin films with constraints on the film thickness uniformity.
Case study of incommensurable quasi-steady-state reactor throughput and conversion objectives.
The purge time is an essential parameter in the optimization of throughput in temporal ALD.
The inherent process robustness is significantly reduced with precursor conversion.
art ic l e i nf o a b s t r a c t
Article history: This paper presents a structured methodology for the constrained multi-objective optimization (MO) of a
Received 20 November 2012 continuous cross-flow atomic layer deposition (ALD) reactor model with temporal precursor pulsing. The
Received in revised form process model has been elaborated and experimentally validated in the first two papers of this series
11 March 2013
(Holmqvist et al., 2012, 2013). A general constrained MO problem (MOP) was formulated to simulta-
Accepted 25 March 2013
neously optimize quasi-steady-state reactor throughput and overall precursor conversion for the
Available online 10 April 2013
controlled deposition of ZnO films from ZnðC2 H5 Þ2 and H2 O, subject to a set of operational constraints.
Keywords: These constraints included lower bounds for the cross-substrate film thickness uniformity and post-
Atomic layer deposition precursor purge duration. The non-dominated Pareto optimal solutions obtained successfully revealed
Optimization
the relation between the incommensurable process objectives and reduced the design space of the ALD
Uncertainty and sensitivity analysis
process into a feasible set of design alternatives. The results presented here show that post-precursor
Numerical analysis
Mathematical modeling purge duration is essential when optimizing throughput in temporally separated ALD processes, and that
Transport processes this is a major drawback when considering operation at atmospheric pressure. Finally, the robustness of
the process along the Pareto optimal front, i.e. the ability of the process to accommodate variations in the
associated set of optimal decision variables (DVs), was assessed by Monte Carlo simulations, in which the
values of the parametric uncertainties were randomly generated from a multivariate normal distribution.
The uncertainty and sensitivity analysis showed that the inherent robustness of the process is
progressively lost with the precursor conversion, and revealed the mechanistic dependence of all DVs
on the proposed optimization specifications.
& 2013 Elsevier Ltd. All rights reserved.
1. Introduction generic ALD process technologies which both rely on decoupling self-
terminating (Puurunen, 2005) gas–surface reactions:
Atomic layer deposition (ALD) is a gas phase deposition technique
that can produce conformal thin films with controlled, uniform (i) Conventional thermal ALD, in which the substrates are sta-
thickness in the nanometer range (George, 2010). There are two tionary and precursors are injected non-overlapping in a time
sequence, separated by intermediate purge steps (Granneman
n
et al., 2007).
Corresponding author. Tel.: +46 46 222 8301; fax: +46 46 222 4526.
(ii) Spatial ALD (S-ALD) (Poodt et al., 2012) with rigid (Fitzpatrick
E-mail addresses: anders.holmqvist@chemeng.lth.se (A. Holmqvist),
tobias.torndahl@angstrom.uu.se (T. Törndahl), et al., 2012; Levy et al., 2009; Nelson et al., 2012) or flexible
stig.stenstrom@chemeng.lth.se (S. Stenström). substrates (roll-to-roll ALD) (Maydannik et al., 2012), in which
0009-2509/$ - see front matter & 2013 Elsevier Ltd. All rights reserved.
http://dx.doi.org/10.1016/j.ces.2013.03.061
72 A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86
continuous precursor flows are separated spatially in different reactor throughput and precursor utilization under the con-
zones and the substrate moves relative to the precursor straints of ensuring spatial control of the cross-substrate film
sources. thickness uniformity and of assigning sufficient post-precursor
purge time.
Industrial semiconductor processing has been a major stimulant (ii) To evaluate the robustness of the set of optimal operating
for the development of the ALD process (Ritala and Niinisto, 2009; points that was determined, i.e. to assess the ability of the
Sneh et al., 2002). Novel applications of ALD are expanding beyond process to accommodate variations in the set of optimal
semiconductor processing in several emerging areas, such as decision variables (DVs) and to rank the variables according
surface passivation layers in c-Si solar cells, buffer layers in to their importance.
CuIn1−x Gax Se2 (CIGS) (Bakke et al., 2011), and diffusion barrier
layers in OLEDs and thin film photovoltaics (Carcia et al., 2009). The reminder of this paper is organized as follows. Section 2
This trend brings with a growing necessity for high-throughput presents the continuous cross-flow ALD reactor system and the
and low cost production techniques (Poodt et al., 2012). mathematical process model. Section 3 describes the formulation
In this study, design parameters for cross-flow, low-volume ALD of the constrained MOP, including its objective functions, algebraic
reactor designs with temporal precursor pulsing were evaluated. The constraints, and DVs. Section 4 is dedicated to the basic compo-
aforementioned reactor designs are of substantial interest for the nents of an uncertainty and sensitivity analysis (UA/SA), while
equipment used to manufacture (Henn-Lecordier et al., 2011) large- Section 5 outlines the modeling and optimization environment.
surface-area substrates (Sundaram et al., 2010). Such substrates are Section 6 presents the results from the multi-objective optimiza-
subject to stringent uniformity, defined by Cleveland et al. (2012) as tion (MO) analysis and the UA/SA of the ALD process model.
the ratio between the standard deviation and the mean value of the Finally, Section 7 contains concluding remarks.
spatially dependent film thickness profile, constraints, while
demands on enhanced throughput (Mousa et al., 2012) and overall
precursor conversion (Lankhorst et al., 2007) require optimal reactor
designs and process operating conditions (Elers et al., 2006). Opti- 2. The continuous cross-flow ALD reactor system
mized reactor design parameters can enable very high throughput,
specifically in the growing number of applications where only very 2.1. Process overview
thin films are needed (Jur and Parsons, 2011). Moreover, optimized
design parameters also allow a significant reduction in precursor The continuous cross-flow ALD reactor system F-120 manufac-
consumption and consequently in the cost-of-ownership, especially tured by ASM Microchemistry Ltd. (Suntola, 1992) was used for the
since it is recognized that many ALD processes under development controlled deposition of thin ZnO films on soda lime glass
for new industrial applications compensate for non-ideal reactor substrates from ZnðC2 H5 Þ2 and H2 O precursors, shown schemati-
designs by significantly over-exposing the substrate to precursors cally in Fig. 1. The reactor setup incorporates an actuator sub-
(Adomaitis, 2011). system that provides flow control (FC) for the carrier gas and each
Wolden et al. (2011) pointed out that the development of precursor inflow, Q_ α and α∈fN2 ; ZnðC2 H5 Þ2 ; H2 Og, and enables
competitive manufacturing techniques requires sophisticated alternate injection with variable dose time, Δt α , of the αth
modeling to understand how to maintain uniformity with respect precursor. Mathematically, the normalized boxcar function,
to both space and time. Furthermore, Henn-Lecordier et al. (2011) Π α ðt; Δt α Þ∈½0; 1, was used to model non-overlapping precursor
and Cleveland et al. (2012) emphasized that the identification of injections in a cyclic time sequence, and is represented as
an ALD process design space (Aelion et al., 1991) defined as the 8
< 1 ϖ α ∑ Δt β ≤t ≤ϖ α ∑ Δt β þ Δt α
multidimensional process design parameter space within which Π α ðt; Δt α Þ ¼ β≠α β≠α ð1Þ
thickness uniformity across the substrate is guaranteed, is non- :
0 otherwise
trivial due to the complex interdependency between the process
design parameters, and requires knowledge of several factors. in which t ¼ ðnΔt −⌊nΔt ⌋ÞΔt is the normalized cycle time,
These include the characteristic time-scales, see e.g. (Adomaitis, nΔt ¼ ðtΔtÞ−1 is the cycle number, Δt ¼ Δt ZnðC2 H5 Þ2 þ Δt N2 þ Δt H2 O þ
2010; Granneman et al., 2007), of reactor-scale mass transport Δt N2 denotes a complete ALD cycle, and ½ϖ ZnðC2 H5 Þ2 ; ϖ H2 O ¼ ½0; 1.
(Aarik et al., 2006; Jur and Parsons, 2011; Mousa et al., 2012), Furthermore, the continuous inert gas flow, Q_ N2 , transports
and the gas–surface reaction mechanism (Deminsky et al., 2004). traveling waves of adsorptive precursors laterally across the active
However, Londergan et al. (2002) observed that optimal process surface of the substrates, which are mounted on opposite sides of
parameters typically fall outside of the normal operating range the reactor chamber. Temperature control (TC) is achieved through
or control space of an ALD process, in which the impact of an external induction heating setup and ensures that the operating
process-induced variations on film thickness uniformity is more temperature, T, is homogenous, while the pressure, p, at the
pronounced. reactor chamber outlet is controlled by a rotary vane vacuum
The overall objective of this study was to develop a novel, pump (PC). Further details of the reactor system setup are given in,
generally applicable method for optimizing a continuous cross- e.g. Holmqvist et al. (2012), Yousfi et al. (2000), and Baunemann
flow ALD reactor model able to handle multiple objectives and (2006).
constraints. This methodology developed was subsequently
applied to an experimentally validated mechanistic model of the
continuous cross-flow ALD reactor system F-120 manufactured by
ASM Microchemistry Ltd. Suntola (1992) and its development is
described in the first two parts of this paper series (Holmqvist
et al., 2012, 2013). These papers present also a case study of the
deposition of thin ZnO films from ZnðC2 H5 Þ2 and H2 O. The present
paper focuses on two main points:
Fig. 1. Simplified schematic diagram of the continuous flow ALD reactor system
(i) To formulate a constrained multi-objective optimization pro- F-120 manufactured by ASM Microchemistry Ltd. (Suntola, 1992). The vector of
blem (MOP) with the objectives of simultaneously maximizing manipulated variables is: u ¼ ½T; p; Q_ N2 ; Δt N2 ; Q_ ZnðC2 H5 Þ2 ; Δt ZnðC2 H5 Þ2 ; Q_ H2 O ; Δt H2 O † .
A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86 73
where Cieq ðÞ∈Rnk and Ceq ðÞ∈Rnl represent inequality and equality
algebraic constraints, respectively, and the vector of decision
variables, u∈Rnj , is subject to lower and upper bounds that act
as inequality constraints. Incompatibility between the objective
functions and their incommensurability makes it impossible to
Fig. 2. Sketch of the computational domain, Ω, with a partitioned boundary
Γ ¼ Γ in ∪Γ wall ∪Γ sub ∪Γ sym ∪Γ out as outlined in (Holmqvist et al., 2012). The dimen-
find a single ideal solution that is optimal with respect to all
sions are as follows: jΓ sub j ¼ 5:0 10−2 (m), jΓ in j ¼ jΓ out j ¼ 2:0 10−3 (m), and objectives simultaneously. Instead, there is an entire set of solu-
jΓ wall j ¼ 2:5 10−3 (m). tions that are equally optimal, known as Pareto optimal solutions
(i.e. non-dominated solutions), and this set provides flexibility for
2.2. The mathematical process model the decision maker (Miettinen, 1998).
Modeling of an ALD continuous flow reactor system may be 3.1.1. Pareto terminology and the dominance relation
performed at different levels of detail and assumptions, see e.g. Aarik The most common notation of optimality adopted in MO is the
and Siimon (1994), Knoops et al. (2011), Siimon and Aarik (1995, Pareto optimality. The formal definition of the Pareto optimality is:
1997), Yanguas-Gil and Elam (2012), and Ylilammi (1995). The level a decision vector un ∈U is denoted Pareto optimal with respect to
that is chosen depends on the predetermined goal of the modeling, the feasible region
as defined by Hangos and Cameron(2001), and the application of the
model. However, in this study, the experimentally validated mechan- U ¼ fun : Cieq ðx; un ; wÞ ≤0∧Ceq ðx; un ; wÞ ¼ 0g ð4Þ
istic model based on computational fluid dynamics, in which the if there is no another decision vector u∈U for which f ðuÞ ¼
narrow flow channel inside the reactor chamber in the ALD con- ½f 1 ðuÞ; …; f ni ðuÞ† dominates f ðun Þ ¼ ½f 1 ðun Þ; …; f ni ðun Þ† (Miettinen,
tinuous flow reactor system (Fig. 1) constitutes the computational 1998). In this case, a vector f ðuÞ is said to dominate the vector f ðun Þ
domain Ω (Fig. 2), developed in the first two parts of this paper series (denoted f ðuÞ≼f ðun Þ) if the following two conditions are satisfied:
(Holmqvist et al., 2012, 2013) was considered. The process model was
∀i∈f1; …; ni g : f i ðuÞ ≤f i ðun Þ ∧
elaborated and validated experimentally such that it can adequately
predict the substrate, Γ sub , spatially dependent film thickness and ∃ι∈f1; …; ni g : f ι ðuÞ o f ι ðun Þ ð5Þ
provide statistically reliable least-square estimates, β, of the para- n
The concept of dominance, for a given MOP f i ðu Þ, allows to define
meters involved in the heterogeneous gas–surface reaction mechan- the non-dominated, Pareto optimal solution set, P n ∈U (Laumanns
ism that governs the growth of the ZnO film. Thus, no finer modeling et al., 2002)
level of the spatial evolution of the substrate film thickness profile,
P n ¼ fun ∈U : ⇁∃u∈U; f ðuÞ≼f ðun Þg ð6Þ
hs ðζÞ and ζ∈½0; jΓ sub j, than mass and momentum conservation
equations, while incorporating reaction rate equations, was consid- and the decision vector un is termed Pareto optimal if un is non-
ered, which is appropriate for the analysis, design and optimization dominated regarding the entire feasible parameter space U
of ALD reactors (Elliott, 2007). (Eq. (4)). Furthermore, the set of objective vectors f ðun Þ corre-
The model partial differential equations (PDEs) were approxi- sponding to a set of Pareto optimal parameter vectors un ∈P n is
mated using the method of lines (Davis, 1984; Schiesser, 1991) and denoted Pareto optimal front (Veldhuizen and Lamont, 2000), and
the finite element method (Zienkiewicz and Taylor, 2000a,b). For defined as
notational simplicity, the associated system of index-1 differential
PF n ¼ ff ðun Þ : un ∈P n g ð7Þ
algebraic equations (DAEs), FðÞ, in which x, u, and w represent
dependent states, free design variables, and algebraic variables,
respectively, can be written in the general form 3.2. Formulation of objective functions
dx
0¼F ; x; u; β; w; t ; xðt 0 Þ ¼ x0 In the present study, the industrial goal of increasing through-
dt
put without compromising the conversion of precursors described
y ¼ gðx; u; β; wÞ
in Section 1 motivated the formulation of the objective functions.
x ¼ ½p; v; ωα ; θκ ; ms † ; ∀α; κ In addition, the developed heterogeneous gas–surface reaction
u ¼ ½T; 〈p〉j ; Q_ ; Δt α † ; ∀α
Γ out α ð2Þ mechanism in the quasi-steady-state growth region (Holmqvist
et al., 2012, 2013) implies that the model response is repre-
where gðÞ is the response function and y denotes the model
sented by limit-cycle solutions and associated with constant
output.
growth per cycle (GPC) (Puurunen, 2003, 2004; Yim et al., 2008).
For this reason, the objective functions and algebraic constraints
3. The multi-objective optimization problem are resolved at the level of a single pulse sequence, Δt. Hence, the
ALD reactor productivity, PjΔt , is defined as the accumulated mass
3.1. Formulation of the constrained multi-objective optimization deposited per unit area of the substrate and cycle time
Z Z
problem 1 ∂ms
PjΔt ¼ ∂Γ ∂t ð8Þ
ΔtjΓ sub j Δt Γ sub ∂t
A MOP involves the simultaneous optimization of i∈f1; …; ni g
where ms is governed by the sum over the sequential hetero-
incommensurable objective functions f ðuÞ ¼ ½f 1 ðuÞ; …; f ni ðuÞ† ∈Rni
geneous gas–surface reaction rates multiplied by the associated
(Deb, 2001; Yee et al., 2003). A general MOP global minimum
difference in molecular weight of the outermost surface species, θκ
problem is formally defined as
(Holmqvist et al., 2012). Moreover, the αth adsorptive precursor
minn −f ðuÞ yield is defined as the relative amount of the inlet precursor dose,
u∈R j
Q_ α Π α ðt; Δt α Þ (cf. Fig. 1), chemisorbed onto the active substrate
subject to Eq: ð2Þ
surface
0≥Cieq ðx; u; wÞ
Z Z Z −1 !
0 ¼ Ceq ðx; u; wÞ jΓ j
Y α jΔt ¼ 1− in N_ α jΓ ∂Γ N_ α jΓ ∂Γ ∂t ð9Þ
umin ≤u ≤umax ð3Þ Δt jΓ out j Γ out Γ in
74 A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86
order for a candidate solution to fulfil the formal feasibility (Lecordier, 2009; Londergan et al., 2002). To evaluate the robust-
requirement, see Eqs. (3) and (4). ness of the optimized continuous cross-flow ALD reactor (Section
2), i.e. to examine how it accommodated variations in optimal DVs,
3.4.2. Post-precursor purge duration model-based uncertainty and sensitivity analysis (UA/SA) (Helton
Precursor physisorption occurs to some extent on internal et al., 2006) was carried out. The main aim was to assess the
surfaces throughout the entire reactor system (cf. Fig. 1), main- impact of variations in key parameters in the Pareto optimal
tained at or near the substrate temperature during the exposure. solution set, P n (Eq. (6)), on product quality, measured by the film
Desorption will subsequently occur during the sequential precur- thickness uniformity (Eq. (13)), and on process performance,
sor exposure period if the reactor has not been subjected to measured by productivity and precursor yields (Eqs. (8) and (9)),
sufficient purging by an inert carrier gas. In order to achieve along the Pareto optimal front, PF n (Eq. (7)). Several approaches
sufficient removal of precursors, the characteristic time constant to UA/SA have been developed, however, an approach based on
for the temperature-dependent desorption process (Groner et al., Monte Carlo methods was used in this study.
2004), the reactor system mean residence time (Elers et al., 2006),
and the carrier gas entrainment (Aarik et al., 2006), must be 4.1. Sampling-based methods
assessed to quantify the background precursor level. Jur and
Parsons (2011) and Mousa et al. (2012) suggested that the lower The initial component that underlies the implementation of
bound of the purge time, Δt N2 , needed in the ALD sequence to sampling-based methods involves assigning distributions that
ensure negligible precursor interaction is determined from the characterize the uncertainty in each of the elements of u. When
maximum values of: no information on the variability of an input parameter is avail-
able, a normal distribution, uj ∼N ðμuj ; s2uj Þ, is generally a good
approximation (according to the central limit theorem
(i) The average gas residence time Vardeman, 1994). The subsequent component comprises the gen-
eration of a sample. Latin hypercube sampling (LHS) is suitable for
jΓ sub j þ 2jΓ wall j
τ¼ ð15Þ use with computationally demanding models because its stratifi-
〈v〉jΩ
cation properties ensure that the whole variable range is uni-
for removing species from the reactor by the bulk purge flow, formly sampled, even with a relatively small sample size (Helton
and ultimately determined from the interdependence of Q_ N2 , p and Davis, 2003). The final component explores and illustrates the
and T through Eq. (10). mapping (Helton and Davis, 2002), during which an approxima-
(ii) The mixing time tion of an empirical probability density function (pdf) of the model
Δ2 output provides the most complete representation of the uncer-
τDαβ ¼ ð16aÞ tainty in the elements of y that is derived from individual
Dαβ
distributions in u. The pdf, ϕðXÞ, of the jdimensional multivariate
!1=2 normal distribution of the vector X, collecting elements of u and y,
ηz1
Δ ¼ 4:64 ð16bÞ is given by
ρvz1 jΓsym j=2
1 1 1 † −1
which is required for physisorbed precursors and vapor ϕðXÞ ¼ exp − ½X−μX ΣðXÞ ½X−μ X ð18Þ
2π ðdet ΣðXÞÞ1=2 2
product species that are generated to traverse the laminar
boundary layer thickness, Δ, over a flat surface into the bulk which is parametrized with a mean vector, μX , and a ðj jÞ
flow through diffusion (Bird et al., 1960). covariance matrix
0 1
s21 ϱ12 s1 s2 … ϱ1j s1 sj
Hence, the lower boundary of the N2 purge period, Δt N2 , is B C
B ϱ12 s1 s2 s22 … ϱ2j s2 sj C
imposed by the equality constraint. B C
ΣðXÞ ¼ B C ð19Þ
B ⋮ ⋮ ⋱ ⋮ C
C eq ¼ Δt N2 −maxðNΩ τ; τDαβ Þ ð17Þ @ A
ϱ1j s1 sj ϱ2j s2 sj … sj 2
Fig. 4. Film thickness profile, hs ðζÞ, as a function of the substrate boundary, Γ sub , local coordinate variable, ζ∈½0; jΓ sub j, for unλ associated with λ1 ¼ ½0:1; 0:2; 0:4; 0:6† and
−1
UFjΔt;min ∈½0:90; 1:0½. hs ðζÞ (Å cycle ) associated with: (–) UFjΔt;min ¼ 0:90; ð− −Þ UFjΔt;min ¼ 0:95; (– –) UFjΔt;min ¼ 0:99.
hs ðζÞ, in the range ζ∈½0; jΓ sub j originates from the decrease in gas– increment trajectory, 〈ms 〉 ¼ 〈ms 〉ðΛM s Þ−1 , for unλ and λ1 ¼ 0:9
surface reaction driving force, hence r ℓ ∝pα jΓsub (Holmqvist et al., (Fig. 5a) exceeds 90% of the theoretical maximum deposited ZnO
2012), which in turn results from depletion of the precursor pulse film mass at t ¼ Δt, whereas the associated mean gas–phase molar
along the direction of the flow. This phenomenon is evident when compositions, 〈ψ α 〉, at Γ in and Γ out correspond to low ZnðC2 H5 Þ2
analyzing the spatial resolution of hs ðζÞ for the set of optimal yield, Y ZnðC2 H5 Þ2 jΔt ¼ 14:8%. In contrast, the model response asso-
operating points ciated with unλ and λ1 ¼ 0:1 (Fig. 5d) corresponds to a high
ZnðC2 H5 Þ2 yield, Y ZnðC2 H5 Þ2 jΔt ¼ 96:2%, whereas 〈ms 〉 o 0:70 at
unλ ¼ fun : ⇁∃u∈Rnj ; Uðu; λÞ≥Uðun ; λÞ∧f ðun Þ∈PF n g ð22Þ t ¼ Δt. Hence, λ1 ¼ ½0:0; 1:0 comprises the anchor points of the
solutions of the single-objective optimization problems for each
and associated weight vector, λ1 ¼ ½0:1; 0:2; 0:4; 0:6, depicted in criterion.
Fig. 4, where higher values of Y ZnðC2 H5 Þ2 jΔt lead to lower film thickness
uniformity (Eq. (13)). Consequently, in order to fulfill more stringent
constraints on the uniformity of film thickness (corresponding to 6.1.1. Assessment of the optimal operating condition parameters
UFjΔt;min -1:0), sufficient driving forces in the forward reaction rates, The projection of the feasible objective function space and
r ℓ , must be preserved as ζ-jΓ sub j, which in turn requires higher the feasible inequality algebraic constraint space depicted in Fig. 6
half-cycle average substrate exposure doses, 〈δZnðC2 H5 Þ2 〉 (Eq. (11)), provide rigorous information about the Pareto optimal solution
at the expense of lower Y ZnðC2 H5 Þ2 jΔt . This is apparent when analyzing set, P n ∈U, which comprises the ALD process design space. More-
Fig. 3, where the optimal Pareto front, PF n , in the range over, the distinctive scatter of feasible dominated solutions in
Y ZnðC2 H5 Þ2 jΔt ∈0:0; 0:4½ is forced towards the origin as UFjΔt;min -1:0. Fig. 6 reveals the corresponding dependence in the objective
Fig. 5 shows the dynamic model response resolved at the function space f ∈R2 for UFjΔt;min ¼ 0:90 depicted in Fig. 3. For
level of a single ALD pulse sequence for the set of optimal clarification purposes, the feasible dominated solutions, u∈U, in
operating points, unλ , in order to demonstrate the implication Fig. 6 are distributed between the DV lower and upper boundaries
of a single-objective optimization of the incommensurable objec- that are listed in Table 1, and reveal the relations between the DVs
tives, f ¼ ½PjΔt ; Y ZnðC2 H5 Þ2 jΔt . The normalized integral mean mass and the objective functions, PjΔt and Y ZnðC2 H5 Þ2 jΔt , and the algebraic
78 A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86
Fig. 5. Dynamic process analysis resolved at the level of one ALD pulse sequence, Δt, for UFjΔt;min ¼ 0:90 and unλ associated with λ1 ¼ ½0:1; 0:4; 0:6; 0:9† . (–) 〈ms 〉 ¼ 〈ms 〉ðΛM s Þ−1
(a.u.) at Γ sub . Integral mean gas–phase molar composition 〈ψ α 〉jΓ (a.u.) of the αth precursor ðα∈fZnðC2 H5 Þ2 ; H2 OgÞ at Γ in and Γ out : ð− −Þ 〈ψ ZnðC2 H5 Þ2 〉jΓ in ; ð○−Þ 〈ψ ZnðC2 H5 Þ2 〉jΓ out ;
(- -) 〈ψ H2 O 〉jΓ in ; ð−▿−Þ 〈ψ H2 O 〉jΓ out .
constraint, UFjΔt . Furthermore, the superposed non-dominated The projection of the non-dominated solutions for Q_ N2 shown in
solution set, P n ∈U, shows the subset of feasible solutions that Fig. 6 exhibits weak convex behavior with respect to PjΔt . Accordingly,
−1
governs the Pareto optimal front, PF n , depicted in Fig. 3. Thus, the a reduction in Q_ N2 increases the inlet mass fraction ðωα jΓin ∝Q_ N2 Þ of
presented multivariate MO method enables simultaneous investi- the αth precursor, and promotes the driving force in the forward
gation of the interdependence of the DVs, and the dependence elementary gas–surface reactions (r ℓ ∝pα (Holmqvist et al., 2012)) at
−1
of the optimal DVs on the proposed objectives and algebraic the expense of an increase in the duration, Δt N ∝Q_ , of the post- 2 N2
constraints.
precursor purge. However, since Y ZnðC2 H5 Þ2 jΔt (Eq. (9)) is time-invar-
The dependence of the feasible dominated solutions for the
temperature, T, (Fig. 6) exhibits convex behavior with respect to iant, maxY ZnðC H Þ j is achieved at the lower boundary of Q_ , as
2 5 2 Δt N2
both PjΔt and Y ZnðC2 H5 Þ2 jΔt . The model response in the range expected. Likewise, the dependence of the non-dominated solutions
T∈½3:0; 4:5½102 (K) is attributed to the activation energy in the for 〈p〉jΓout on Y ZnðC2 H5 Þ2 jΔt is dictated to a high degree by the
Arrhenius equation (Schwaab and Pinto, 2007, 2008; Schwaab aforementioned parametric dependence, and corresponds to an
et al., 2008) of the elementary gas–surface reaction mechanism as optimal gas–surface reaction rate ðr ℓ ∝pα Þ, in which the molar fraction,
defined in Holmqvist et al. (2012). The model response in the ψ , of the αth precursor is ultimately governed by Q_ .
α N2
range T∈4:5; 6:0 102 (K), however, originates from extensive The feasible dominated solutions of 〈p〉jΓout also depend on PjΔt
dehydroxylation, which overrides the effect of the increase in in a convex manner (Fig. 6). The model response in P Δt for 〈p〉jΓout is
hydroxyl groups during the H2 O exposure sequence (Deminsky ultimately determined by the incommensurability between the
et al., 2004; Matero et al., 2000). Additionally, Eqs. (10) and (15)– forward elementary gas–surface reaction rates, r ℓ ∝p, and the post-
(17) make it clear that Δt N2 ∝pðT Q_ N2 Þ−1 , which implies that the precursor pulse duration, Δt N2 ∝p. This is evident from analyzing
optimal T (which corresponds to max PjΔt ) is a compromise the associated post-precursor purge period, which arises from
between a high gas–surface reaction rate and a low Δt N2 . On the the parametric interdependence of u ¼ ½T; 〈p〉jΓout ; Q_ N2 through
other hand, Y ZnðC2 H5 Þ2 jΔt is time-invariant (Eq. (9)), and is not Eqs. (10) and (15)–(17) for the set of non-dominated solutions.
affected by the parametric dependence of Δt N2 . Hence, as 〈p〉jΓout approaches atmospheric pressure, the overall
A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86 79
Fig. 6. Projection of the feasible objective function space and the feasible inequality constraint space for UFjΔt;min ¼ 0:90 and the set of DVs u ¼ ½T; 〈p〉jΓ out ; Q_ N2 , and the
associated post-precursor purge time, Δt N2 (Eqs. (10) and (15)–(17)). ð○Þ Feasible Pareto optimal solution set, P n ∈U; ðÞ Feasible dominated solutions, u∈U; ð◀Þ Ex situ XRR film
thickness measurement data presented previously (Holmqvist et al., 2012).
productivity (Eq. (8)) is favored more by a reduction in Δt N2 than it solutions accumulate near the lower boundary (Table 1). This
is by promoting the forward gas–surface reaction rates. The impact shows that a reduction in Δt N2 favors the overall productivity
of 〈p〉jΓ out on PjΔt for N Ω ∈½2:0; 1:0 102 (Eq. (17)) will be discussed (Eq. (8)) more than it promotes the forward gas–surface reaction
in detail in Section 6.1.2. rates. It is, however, noteworthy that the severe dependence of
In conclusion, the projection of the non-dominated solutions Δt N2 on P Δt falls as N Ω -1:0. This implies that the duration of the
depicted in Fig. 6 demonstrates that it is impossible to optimize post-precursor purge is of key importance when optimizing the
the set of DVs u ¼ ½T; 〈p〉jΓ out ; Q_ N2 using an OVAT approach without throughput of cross-flow, low-volume ALD reactor designs with
obtaining solutions that are essentially of a local optimization temporal precursor pulsing, and that it presents a major obstacle
nature. This is a consequence of the severe parametric interde- when considering the optimal operation of atmospheric pressure
pendence, ultimately determined from the inherent mathematical ALD designs.
structure of Eq. (10).
^
fX : ½X−μ^ X † ΣðXÞ −1
½X−μ^ X ¼ χ 2ðφ;αÞ g ð23Þ
Fig. 8. Projections of the feasible objective function space and the feasible inequality constraint space for UFjΔt;min ¼ 0:90 and for the set of DVs u ¼ ½Q_ ZnðC2 H5 Þ2 ; Δt ZnðC2 H5 Þ2 , and
the associated half-cycle average substrate exposure dose, 〈δZnðC2 H5 Þ2 〉 (Eq. (11)). ð○Þ Feasible Pareto optimal solution set, P n ∈U; ðÞ Feasible dominated solutions, u∈U; ð◀Þ Ex
situ XRR film thickness measurement data presented previously (Holmqvist et al., 2012).
Table 2
Analysis of the impact of the sample u^ λ ∼N ðunλ ; s2un Þ, with a percentage deviation of
λ
sunλ ¼ ½1:0; 5:0; 10:0ð%Þ in the set unλ (Eq. (22)) on f ¼ ½P jΔt ; Y ZnðC2 H5 Þ2 jΔt † and on
UFjΔt along the Pareto optimal front for ½UFjΔt;min ; N Ω ¼ ½0:95; 2.
λ1 n
jμ^ f 1 ðu^ λ Þ −f 1 ðu^ λ Þj (%)
n
jμ^ f 2 ðu^ λ Þ −f 2 ðu^ λ Þj (%) ju^ λ ∉Uja
(%)
ju^ λ j
a
j j denotes the cardinality of a set.
Fig. 10. Analysis of the impact of the sample u^ λ ∼N ðunλ ; s2un Þ, with a percentage deviation of sunλ ¼ 10:0ð%Þ in the set unλ (Eq. (22)) and associated weight vector
λ
λ1 ¼ ½0:1; 0:2; 0:4; 0:5; 0:6; 0:8† , on UFjΔt . (Histogram) Colored bars represent unfeasible solutions, u^ λ ∉U, that violate the algebraic inequality constraint (Eq. (14)); (–)
Cumulative frequency of the distribution.
and cases λ1 ∈0:0; 1:0 considered. In contrast, the pressure at the elaborated and experimentally validated in the first two parts of
outlet, 〈p〉jΓout , was the most critical variable, having remarkably this paper series (Holmqvist et al., 2012, 2013). The MOP involves
high correlation coefficients for λ1 o 0:6. Moreover, the sensitivity simultaneous optimization of the incommensurable objectives of
of pulse sequence parameters, Δt ZnðC2 H5 Þ2 and Q_ ZnðC2 H5 Þ2 , to UFjΔt reactor throughput and overall precursor conversion, subject to a
increased with λ1 as expected (cf. Section 6.1). In addition, set of operational constraints. The constraints include lower
Δt ZnðC2 H5 Þ2 was the most critical variable with respect to f as bounds for the uniformity of cross-substrate film thickness and
λ1 -1:0, and this places stringent demands on the actuation duration of the post-precursor purge. For this reason, a novel
of valves for consistent precursor delivery, in agreement with model-based methodology for rendering large scale constrained
previous studies (Londergan et al., 2002). MOPs for ALD processes was proposed. The non-dominated Pareto
In conclusion, Figs. 9–11 and Tables 2 and 3 make it clear that optimal solution set was obtained by a MOEA developed and
both the uncertainty in the optimization specifications and the tested for this purpose, and reduced the ALD process design space
sensitivity of the associated optimal DVs differ significantly along into a feasible set of design alternatives.
the Pareto optimal front. It has, however, been possible to identify The comprehensive assessment of the Pareto optimal solution
the critical variables that require strict process control, and to set reported here shows how increasingly stringent constraints on
evaluate the robustness of the process, given the assigned pertur- the uniformity of cross-substrate film thickness and the duration
bation in the optimal DVs, sunλ . of the post-precursor purge affect the process objectives. More
stringent constraints on film thickness uniformity lead to higher
half-cycle average substrate exposure doses, provide a driving
7. Concluding remarks force for the ALD gas–surface reactions towards the trailing edge
of the substrate, at the expense of lowered overall precursor yield.
This paper presents quasi-steady-state, constrained MO of the Moreover, increasing the number of reactor chamber volumes
mechanistic model of the continuous cross-flow reactor system purged during the post-precursor purge period shows that the
F-120 manufactured by ASM Microchemistry Ltd. (Suntola, 1992) productivity criterion is favored more by a reduction in the purge
with temporal precursor pulsing. The process model has been period than by promoting the ALD gas–surface reaction rates.
A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86 83
Fig. 11. Analysis of the impact of the individual elements of the sample u^ λ ∼N ðunλ ; s2un Þ, with a percentage deviation of sunλ ¼ 10:0ð%Þ in the set unλ (Eq. (22)) and associated
λ
weight λ1 ¼ 0:1, on f ¼ ½P jΔt ; Y ZnðC2 H5 Þ2 jΔt † and UFjΔt for the set of DVs listed in Table 1. ðÞ Projection of the model response; (–) Projection of the hyperellipsoid with a
percentage significance level α ¼ 5:0ð%Þ (Eq. (23)); (- -) The principal axes are given by the eigenvectors of ΣðXÞ ^ (Eq. (19)).
The subsequent UA/SA based on LHS to the non-dominated Finally, the contribution of this paper is the novel model-
solutions along the Pareto optimal front was carried out to assess based methodology that considers MO in conjunction with UA/SA,
the impact of variability in the associated set of optimal DVs on the for optimizing manufacturing performance metrics of throughput
optimization specifications and to identify the most critical vari- and precursor utilization in continuous cross-flow ALD reactor
ables. The UA/SA shows that the inherent process robustness is designs without compromising the film quality and process
progressively lost as the precursor yield increases. The process control. The fundamental process understanding gained here is of
objectives and constraints, however, may not necessarily be practical interest when scaling ALD processes to large-surface-
affected by the same DVs along the Pareto optimal front, but the area substrates in high-throughput productions where even small
model-based stochastic methodology presented here allows to variations in the growth rate can be detrimental to the end-use
identify the key DVs. properties.
84 A. Holmqvist et al. / Chemical Engineering Science 96 (2013) 71–86
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