7 CYPRESS
faxid: 5404
CY7C419/21/25/29/33
256/512 /1K /2K/4K x 9 Asynchronous FIFO
Features
+ Asynchronous first f
+ 256 x9 (CY7C419)
+ 812x9(C¥7C421)
1K x9 (CY70425)
2K x9 (CY7C429)
4K x9 (CY7C433)
Dualported RAM cell
High-speed 50.0-MHz readiwrite independent of
depthiwidth
Low operating power: loc = 35 mA
Emply and Full flags (Half Full flag in standalone)
TTL compatible
Retransmit in standalone
Expandable in width
PLCC, 7x7 TOFP, SOJ, 300-mil and 600-mil DIP
Pin compatible and functionally equivalent to 1D17200,
1017201, 1077202, 1077203, 1077204, AM7200, AM7207,
‘AM7202, AM7203, and AM7204
Functional Description
‘out (FIFO) butfer memories
The CY7CAI9, CY7CA2O, CYTCA2AIS, CY7CAZA, and
CY7C432/8 are frstin first-out (FIFO) memories offered in
6600-mil wide and 300-mil wide packages. They are, respec-
tively, 256, 512, 1,024, 2,088, and 4,098 words By @-its wide
Cypress Semiconductor Corporation +
3901 North First Street
Each FIFO memory Is organized such thatthe data is read in
the same sequential order thal twas written. Full and Empty
flags are provided to prevent overrun and underrun. Three
additonal pins are also provided to facitate unlimited expan-
Sion in width, dapth, or both. The depth expansion technique
‘tears the contral signals from one device to another in paral:
lel, thus eliminating the serial addition of propagation delays,
‘so that throughput is not reduced. Data Is steered in a similar
The read and write operations may be asynchronous; each
can occur al a rate of 60.0 MHz. The write operation occurs
when the write (W) signal is LOW. Read occurs when read (F})
goes LOW. The nine data outputs go lo the high-impedance
State when Fis HIGH
‘A Half Full (AF) output flag is provided that i valid inthe stan-
dalone and width expansion configurations. In the depth ex-
pansion configuration, this pin provides the expansion out
(%O) information that is used to tell the next FIFO that it willbe
‘activated
In the standalone and width expansion configurations, a LOW
fon the retransmit (FT) input causes the FIFOs to retransmit the
data. Read enable (F) and write enable (W) must both be
HIGH during retransmit, and then Fis usedto access the data.
The CY7C4I9, CY7C420, CY7C421, CY7C424, CY70425,
GY70428, CY/C429, GY70432, and CY70433 are fabricated
Using an advanced 0.65-micron P-well CMOS technology. In
put ESD protection is greater than 2000V and latch-up is pre.
Vented by careful layout and guard rings.
SanJose + CA 95134 + 408-943-2600
February 1988 ~ Revised November 4, 1987v=
7 F ness CY70419/21/25/29/33
Logic Block Diagram ona Pin Configurations
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Selection Guide
Br TEST [TORTS TERE [TOIT
B29 (GOOTTOAT) TRA TOO TeARO-AO | TOROS
ao TERTAO | TERRE | Toar-20 | ToaeI-6 | TORRT-B0 | Teaei-a0 | TOWDI-6s
TEx9 BOOTS TeADBO | TOAD-BE | ToaDA-30 | ToaaaA0 | TOWDA-SS
7x3 TEREST] TOES | TORDE-20 | TOHE-D5 | TOWDE-BO | TORDE-HO | TOWDS-ES
A BOOT SAAT 7e36-20 TERRE
OS TERED] TORTS | TERTS-20 | TORDE-TS | TOWS-B | TOREAO | TOWS-ES
FORO TOAD Teasa-25 FERIA
FOS TREAT | TORSIAS | TERGS-O | TOAS-B5 | TORGR-BO | TOAGT-AO | TOSSES
Frequency FE] af 6m Sa [om T=
Haiurn Recess Tine (os) | 70} 18 —| 20 —} — es | 0] 90 as
Tee A) we Ts a as as as as
DG Votage Apple to Ouputs
Maximum Rating in High Z State, -0.5V to +7.0V
(Above which the useful life may be impaired. For user guide- DC Input Voltage ARTE
(hee at teied} Power Dissipation “ow
Siorage Temperature -e5°Ct0 +180°C _Ouput Curent ito Outputs (LOW). 20 mA
‘Anbint Temperature wh Static Dacharge Votage 2000
Power Applied. 55°C to +125°C. (per MIL-STD-883, Method 3015)
Suppl Voage to Ground Potential -08Vto47OV—_Lateh-Up Curent 2200 mA=
== Cypress. CY7C419/21/25/29/33
Operating Range
Range [Ambient Temperature] Vee
Commercial C10 + 70°C BV = 10%
Industrial —a0°C to 485°C BV 10%
Miltary =E5°C to 125°C | SVE 10%
Electrical Characteristics Over the Operating Range!”
TCA19-10, 15, 30, 40
7C420/I~10, 15, 20, 25, 30, 40, 65
7€424/5~10, 15, 20, 25, 30, 40, 65
7€428'9-10, 15, 20, 25, 30, 40, 65
7€432/3-10, 15, 20, 25, 30, 40, 65
Parameter Description Test Conditions Min. Max. Unit
Vou ‘Ouiput HIGH Voltage Veo = Min. lou = =2.0 mA 24 Vv
Vou ‘Output LOW Voltage: Veo = Min., lo. = 8.0 mA od vi
Vt Input HIGH Voltage Com’ 20 Veo Vv
Milind 22 Veo
Vi Input LOW Voage Note 3 08 v
Ig Input Leakage Current GND < Vis Voo 10 +10 HA
loz, Output Leakage Current Fie Vw. GND < Vos Veo. 10 +10 WA
los. Output Short Circuit Current] | Voo = Max., Vour = GND 30) mA
Electrical Characteristics Over the Operating Rangel (continued)
TCHS | TCHSAS
7¢420-20 | 7¢420-25
rea2-10 | 7c421-15 | 76421-20 | 76421-25
7¢424-20 | 7C424-25
70425-10 | 7¢426-15 | 76425-20 | 76425-25
7428-20
7042-10 | 7¢429-15 | 76429-20 | 70429-25
76492-25
7¢433-10 | 7¢493-15 | 7¢433-20 | 76433-25
Parameter | __ Description Test Conditions _[ Min. [ Max. | Min. [Max. | Min. | Max. | Min. | Max. | Unit
To ‘Operating Current | Veo = Max.) Com s 3 50_| mA
lour=0mA Hating 100 30 0
Fe fax
Too! ‘Operating Current | Voo = Max. | Com ES 35 ES 35 | mA
lour=0mA
F = 20 MHz
Tsar ‘Standby Current | Allinputs =| Com 10 10 10 Tomax
Vin Min. Milind 5 1S 5
Tsa2 Power-Down Current | Allinpuis = | Com 5 5 5 5 | ma
Voo-02V yaitind = = =
Wate
2 Berd en ge Se spchenion ts Gu A ty testing bration
44 Fortes purposes, nol more han one ouput ar te shoud be shotec. Sort celts duration should not exoaed 30 seconds,