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IN
MEMORY DEVICES
BY-
Nanotechnology deals with the study of nano sized particles. With the study of
nano size particles, devices and composites, we will find ways to make stronger
materials, detect diseases in the bloodstream, build extremely tiny machines, generate
light and energy and purify water. The most fascinating application of Nanotechnology
is that to make Nano sized switches to store information.
The memory needs of the contemporary world have increased dramatically.
Fulfilling these needs, a constant work to impr ove the capacities of today’s memory
devices is in progress. The maximum available semiconductor RAM in common use is of
1GB. Even this could not fill the growing memory desire of today’s users. As a result a
nonvolatile, fast and vast RAM has been built with the combination of semiconductor and
nanotechnology, named as NRAM (Nano RAM).
The main objective of this paper is to show how NANOTECHNOLOGY
comfortably mingles with the existing semiconductor technology to from a sup erior
RAM, which is nonvolatile, vast and economical, both, in price and power consumption .
An effort, to explain why and how the Nano —RAM’s are superior to the existing forms
of RAM devices, is made in the introductory part. This paper also includes the design and
description of the Nano —RAM, followed by its advantages and disadvantages. As the
CARBON NANOTUBE forms the heart of these devices , a short notes is also added to
introduce the CARBON NANOTUBE’s. Efforts are also made to include a small
comparison between the Nano —RAM and other possible RAM technologies which claim
themselves “Universal” as that of Nano —RAM.
INTRODUCTION:
Today the world is of digital. All the electronic devices are formalized to
manipulate the digital data. The back -bone of today’s research and development “The
Computer” is also a digital device. Digital by name deals with digits and all the gadgets
available today (like PDA’s, laptops, etc…) need to manipulate the digital data. To
manipulate first we have to store it at a place. Thus MEMORY in t oday’s world plays a
key role and a constant research to improve the memory in today ’s electronic gadgets is
ON.
RAM (random access memory) is the main storage device in all digital systems.
The speed of the system mainly depends on how speed and vast the RAM is. Today with
increasing power need of man even the POWER consumed is also a major part to look at.
By generations RAM also had under gone many changes. Some of the versions
of RAM’s which are in use are DRAM, SRAM and FLASH MEMORY. DRAM
(dynamic RAM) although has a capability to hold large amounts of data it is slower and
volatile.
SRAM (static RAM) even superior to DRAM in speed but less denser . Even this
is volatile in nature. Over coming the volatile nature of these two FLASH MEMORY is
the latest of today random access memories. Even this fails in power saving. Overcoming
all these failures of above mentioned RAM’s , researchers developed a new RAM which
unlike the semiconductor technology alone used by the former, uses a combination of
NANOTECHNOLOGY and contemporary SEMICONDUCTOR TECHNOLOGY and is
given the name NRAM.
CARBON NANOTUBE:
As shown in fig sagging and straightening represent ’1’ and ‘0’ states,
respectively, for a random access memory. In its ‘0’state, the nanotube fabric remains
suspended above the electrode. When the transistor below the electrode is turned on, the
electrode is turned on, the electrode produces an electric field that causes the nanotube
fabric to bend and touch the electrode - a configuration that denotes ‘1’ state. This is the
principle of a switching device.
A nanotube memory is faster much smaller while consuming little power. Due to
their extraordinary tensile strength, resilience and very high conductivity, nanotubes can
be flexed up and down million times without any damage and can make a very good
switchingcontact.
Nanotubes purchased from bulk suppliers are a form of high -tech carbon soot that
contains a residue of about 5 percent iron a containment that must be removed before
further processing. It requires a complex filtration process to reduce the amount of iron to
the parts per billion levels. The purified carbon nanotubes are deposited as a film on the
surface of a silicon wafer without interfering with adjoi ning electrical circuitry from
which chips are carved.
Deposition of nanotubes onto the wafer using a gas vapour requires temperatures
so high that the circuitry already in place would be ruined. It is therefore done by
spraying a special solvent containing nanotube on the top of the silicon disk spinning like
a phonograph record. The thin film of nanotubes left after the solvent is evaporated, is
subjected to standard semiconductor lithography and etching, which leave the surface
groupings of nanotubes with interconnecting wires. Thereafter, chips are cut from the
wafer and encapsulated by the standard IC technology.
Advantages:
NRAM has a density, at least in theory, similar to that of DRAM. DRAM consists
of a number of capacitors, which are essentially two small metal plates with a thin
insulator between them. NRAM is similar, with the terminals and electrodes being
roughly the same size as the plates in a DRAM, the nanotubes between them being so
much smaller they add nothing to th e overall size. However it seems there is a minimum
size at which a DRAM can be built, below which there is simply not enough charge being
stored to be able to effectively read it. NRAM appears to be limited only by the current
state of art in lithography. This means that NRAM may be able to become much denser
than DRAM, meaning that it will also be less expensive, if it becomes possible to control
the locations of carbon nanotubes at the scale the Semiconductor Industry can control the
placement of devices on SILICON.
Additionally, unlike DRAM, NRAM does not require power to "refresh" it, and
will retain its memory even after the power is removed. Additionally the power needed to
write to the device is much lower than a DRAM, which has to build up charge on the
plates. This means that NRAM will not only compete with DRAM in terms of cost, but
will require much less power to run, and as a result also be much faster (write speed is
largely determined by the total charge needed). NRAM can theoretically reach sp eeds
similar to SRAM, which is faster than DRAM but much less dense, and thus much more
expensive.
NRAM potentially avoids all of these issues. The read and write process are both
"low energy" in comparison to Flash (or DRAM for that matter), meaning that NRAM
can result in longer battery life in conventional devices. It ma y also be much faster to
write than either, meaning it may be used to replace both. A modern cellphone will often
include Flash memory for storing phone numbers and such, DRAM for higher speed
working memory because flash is too slow, and additionally some SRAM in the CPU
because DRAM is too slow for its own use. With NRAM all of these may be replaced,
with some NRAM placed on the CPU to act as the CPU cache, and more in other chips
replacing both the DRAM and Flash.
Comparison with other proposed systems
The only system currently ready for commercial use is ferroelectric random
access memory (FRAM or FeRAM). FeRAM adds a small amount of a ferro -electric
material in an otherwise "normal" DRAM cell, the state of the field in the material
encoding the bit in a non -destructive format. FeRAM has all of the advantages of NRAM,
although the smallest possible cell size is much larger than for NRAM. FeRAM is
currently in use in a number of applications where the limited number of writes in Flash
is an issue, but due to the massive investment in Flash factories (fabs), it has not yet been
able to even replace Flash in the market.
Other more speculative memory systems include MRAM and PRAM. MRAM is
based on a magnetic effect similar to that utilized in modern hard drives, the memory as a
whole consisting of a grid of small magnetic "dots" each holding one bit. Key to
MRAM's potential is the way it reads the memory using the magneto -restrictive effect,
allowing it to read the memory both non -destructively and with very little power.
Unfortunately it appears MRAM is already reaching it's fundamental smallest cell size,
already much larger than existing Flash devices. PRAM is based on a technology similar
to that in a writable CD or DVD, using a phase -change material that changes its magnetic
or electrical properties instead of its optical ones. PRAM appears to have a small cell size
as well, although current devices are nowhere near small enough to find if there is some
practical limit.
CONCLUSION:
Though this technology today is limited to laboratories and not economically
viable, some new method of construction will have to be introduced in order to make the
system practical. Once this is d one we can see the enabling of instant-on computers,
which boot and reboot instantly with un-imaginable memory sizes, as well as high-
density portable memory - MP3 players with 1000s of songs, PDAs with 10 gigabytes of
memory, high-speed network servers and much more.
KEYWORDS:
RAM — Random Access Memory
NRAM — Nano Random Access Memory
DRAM — Dynamic Random Access Memory
SRAM — Static Random Access Memor y
MRAM — Magnetic Random Access Memory
Fe RAM — Ferro Electric Random Access Memory
PDA — Personal Digital Assistant
REFERENCES:
1. Nanotube RAM could displace silicon memory
-J. Eric smith
2. www.wikipedia.com
3. www.nerdshit.com
4. The incredible shrinking Nanotube Memory
-E.F.Y magazine.