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ELECTRICAL
CHARACTERISTICS
Characteristic
(TA = 25C
unless otherwise
*Forward
Switching
Voltage
Vs
*Forward
Switching
Current
IN5160, IN5793
s IFM
*Forward (VF
Off-State
VS)
Current
1
= 0.75X
-~ IRM ~ \
Current
= VRM) Current lN5158thru thru IN5781 1N5782 IN5788 thru IN5787 thru 1 N5793 IN5160, 1N5779 , I
1.0
10
0.1
I f
Vlps
0.1 ~ I
I
I
0.1
0.1
(AC Voltage Turn-On Turn-Off Time Time = 10 mV, VF = O, f = 100 kHz) (Figure (Figure 2) 3) ~< ,;,:.~ ..$<\* . ...~. .*:* ,,,,\,.*:. .~,l. -.. . ... ,,.. !,, ... ~.. Q o _ on toff _: : 75(1) 250(1)
I
I
0.1
__,
i-i,
: ns
[
!
(+)
SCOPE
(-)
ll
FIGURE CONDUCTION
4 TYPICAL
FORWARD
CHARACTERISTICS 50
40
30
20
1.0
2.0
3.0 FORWARD
4.0 VOLTAGE
5.0 (VOLTS)
6.0
7.0
1.0
5,0
7.0
VF, INSTANTANEOUS
1.5
75
50
25
O TA, AMBIENT
25
50 TEMPERATURE
75 (OC)
100
125
150
\. \ \
\ \ \ \
1
,-.
0.1 I ( 75 50 -25 0 TA, AMBIENT 25 50 75 (C) 100 125 150 75 50 25 O TA, AMBIENT 25 50 75 (C) 100 125
1
150 TEMPERATURE
TEMPERATURE
4-LAYER
DIODE
v
1 IR
dvldt Is
RATE
(v/Ps)
FORWARD BREAKOVER (swITCHt NG) CURRENT The value of anode current at the instant the device switches from the blocking to the on state, specified at a particular junction temperature. FORWARD CURRENT The continuous forward current during the on state. PEAK FORWARD BLOCKING CURRENT or DC value.of ,\L*f(. ,:,.,.l~y., TR&.pe~b
IF ] FM
,i;:,\
toff
point (90% of forward blocking voltage) and the 10% above the on voltage under stated conditions.
point
TURN-OFF TIME The time interval required for the device to regain control of its forward blocking characteristic after interruption of forward anode current. FORWARD BREAKOVER (SWITCHING) VOLTAGE The positive anode voltage with respect to cathode required to switch the device from the high impedance blocking state to the low impedance on state, specified at a particular junction temperature. FORWARD VOLTAGE The forward voltage across the device in the on state under stated conditions of current and temperature. FORWARD BLOCKING VOLTAGE The anode-to-cathode voltage when the 4-layer diode is in the off state. PEAK REVERSE VOLTAGE The maximum allowable instantaneous value of reverse voltage (repetitive or continuous DC) which can be applied to the device at a stated temperature without damage to the device.
IH
pulse
anode current when the 4-layer diode is in the.;@$?*~?&te for a stated anode-to-cathode voltage and jun,~~~~ &per,,t:,,*..:j.i,,1$,$ \ ture. 1...,,, ..,> !4 HOLDING CURRENT That value $ $$:, ~~hard anode current below wh; ch the 4-laVer dio~$+~fi~$dhes from the conducting state to the forward bl.o*,&{,~,$~kon dition. ,il,$):~ PEAK PULSE CURRENT T$e ~ah repetitive current that can flow stated. through th:,+@@%~&~.*r the time duration y.! !&, .1.. ~: ,,.,,.s> ,).,,,.,,. B~~~~~ CURRENT The peak
Vs
VF
VFE VRM
IRM
PEAK
REVERSE
current when the, $-Ia~~$,:@ode is in the reverse blocking state for a state@ a@ode~to-cathode voltage and junction temperature. ;~~~++ pD STEADY ~~~~$$P~WER ~ *i ,,.:;>:.,,~~.~ ,.. DISSIPATION
Mechanical
CHARACTERISTICS
CASE: Hermetically sealed all glass case DIMENSIONS: JEDEC DO-7 Outline FINISH: All external surfaces are corrosion resistant with readily POLARITY: Cathode end indicated bv color band. WEIGHT: 0.2 grams (approx.) MOUNTING POSITION: AnV
solderable
leads.
(M) u
MOTOROLA
u
969-5 PRINTED IN USA 12-72 OX 20912 LITHO B33663 . IMPERIAL
Semiconductor
PHOENIX, 6,\4 AR]20NA 85036 . A SUBSIDIARY
Products
OF MOTOROLA INC.
Inc.
N 6510R1