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Sentaurus Device
Optoelectronics
Overview
Sentaurus Device is an advanced device simulator capable of simulating a wide range of semiconductor
devices. It includes state-of-the-art numeric solvers and a comprehensive set of models for carrier and heat
transport, quantization effects, and heterostructures. Two optional modules extend these capabilities to address
the simulation needs of optoelectronic devices. The Opto option supports the simulation of light-emitting
devices with advanced band structure and gain calculations. The EMW option allows full-wave solutions of the
Maxwell equations to account for physical optics in advanced devices.
These advanced capabilities make Sentaurus Device the ideal tool to simulate modern optoelectronic devices
such as CMOS image sensors, charge-coupled devices, solar cells, photodiodes, light-emitting diodes, and
various types of laser such as vertical-cavity surface-emitting lasers (VCSELs), and distributed feedback (DFB)
and Fabry–Perot edge-emitting lasers. Users can generate complex 2D and 3D device structures and obtain
self-consistent optoelectrothermal solutions, thereby gaining key insights into device design and operation.
Benefits
• Explore new device concepts
• Characterize electrical, thermal, and optical behavior for fast
prototyping, development, and performance optimization
• Study sensitivity of device characteristics to process variation
for optimizing parametric yield
• Improve failure analysis
6
RESET
5
Voltage [V]
3 DARK
2
ILLUMINATED
1
0
5e-05 0.0001
Time [s]
100
80
40
IQE
20 EQE
0
400 600 800 1000
Wavelength [nm]
100
91
82
73
AR Coating
64
Area
55
46
37
Annular Contact 28
19
10
0.5 0.65 0.8 0.95 1.1 1.25 1.4 1.55 1.7 1.85 2
Thickness
0.5 10
-5
Noncoherent Optical Model 150 K Figure 6: (Upper left) Typical mesa structure
Coherent Optical Model -6 140 K
10 130 K used for InGaAs/InP TCAD simulation, (upper
0.4 120 K
110 K
Responsivity [A/W]
-7
10 right) responsivity–band width ‘process
100 K
Current [A]
0.3
10
-8
90 K window’ derived from geometry (area,
-9
80 K depletion region thickness) variation in a
0.2 10
70 K vertical photodiode, (lower left) illustration of
-10
10
60 K the effect of coherent optics on responsivity in
0.1
-11
10 submicron photodiodes, and (lower right) dark
0 10
-12 current variation as a function of temperature
5e-07 1e-06 0.2 0.4 0.6 0.8 1
Wavelength [m] Reverse Bias [V] in HgCdTe photodiodes.
External
Reflector
-90
-115
-120
-125
-130
Simulation
-135 Measurement
Figure 11: Example of typical laser characteristics for
-140 AlGaAs VCSEL, showing relative intensity noise versus
0 1 2 3 4 5 6 7 8
Frequency [GHz] frequency.
Wavelength [nm]
1560
Figure 12: Wavelength map for a widely tunable
1540 sampled-grating distributed Bragg reflector (SGDBR)
Figure 10: Optical intensity profile 0 laser; by tuning front and rear currents of DBR mirrors,
10 0
of fundamental HE11 mode of Re 20 10 the reflection peak and, therefore, lasing wavelength
ar 20
Mi 30 30
an oxide-confined vertical-cavity rro 40 mA] can be tuned in large discrete steps or in a fine
r [m 40 50 ror [
50 60 t Mir
surface-emitting laser (VCSEL). A] Fron continuous way.
50 Conduction Band
0
Simulation
40 Experiment
Modal Gain [cm-1]
30 -1
Energy [eV]
Electron Wave
No Piezo Charge
20 Piezo Charge = 5e13
-2
10
Heavy Hole Wave
0
-3
Valence Band
-10
2.95 3 3.05 1e-08 1.5e-08
Energy [eV] Vertical Position [m]
Figure 13: Modal gain versus transmission energy for a laser device with Figure 14: Band diagrams and wavefunctions of an InGaN/GaN
InGaN/GaN quantum wells. quantum well (red) with and (blue) without piezoelectric charges at
the quantum well interfaces; piezoelectric charges lead to tilting of
the quantum well, resulting in separation of wavefunctions, thereby
reducing their overlap integrals and the stimulated emission rate.
Figure 15: Total current density distribution resulting from coupled optoelectrothermal simulation of three-section
distributed Bragg reflector (DBR) laser. The distribution shows strong inhomogeneities caused by the electronic
isolation channels between the gain (front), phase (middle), and grating (rear) sections. For more realistic
thermodynamic modeling, the translucent beige region has been added to the electrothermal simulation domain.
Synopsys, Inc.
700 East Middlefield Road
Mountain View, CA 94043
www.synopsys.com
Copyright © 2006 Synopsys, Inc. Synopsys and the Synopsys logo are registered trademarks of Synopsys, Inc. All other products or service names mentioned herein are trademarks of their respective
holders and should be treated as such. Printed in the U.S.A. 09/06.DP.06-14355