CEP83A3/CEB83A3

N-Channel Enhancement Mode Field Effect Transistor FEATURES

30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D PRELIMINARY

G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220

ABSOLUTE MAXIMUM RATINGS

Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a

Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 30

Units V V A A W W/ C mJ A C

20
100 400 100 0.67 875 35 -55 to 175

Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range

Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA Limit 1.5 62.5 Units C/W C/W

2004.September 4 - 178

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CEP83A3/CEB83A3
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 20A VDS = 15V, ID = 16A, VGS = 5V VDD = 15V, ID = 1A, VGS = 10V, RGEN = 6 25.7 10 128 34 50 20.8 19 90 1.5 50 20 200 70 65 ns ns ns ns nC nC nC A V
c

Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 50A VGS = 4.5V, ID = 40A VDS = 10V, ID = 15A 1 4.2 6.0 27 9500 800 300 Min 30 1 100 -100 3 5.3 8.0 Typ Max Units V
A

nA nA V m m S pF pF pF

VDS = 15V, VGS = 0V, f = 1.0 MHz

Drain-Source Diode Characteristics and Maximun Ratings

Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25, Starting TJ = 25 C

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CEP83A3/CEB83A3
100 VGS=10,8,6,4V 50

ID, Drain Current (A)

ID, Drain Current (A)

80

40

60

30

VGS=3V
40

20 25 C 10 TJ=125 C -55 C 3 4 5

20

0 0 1 2

VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics

12000 10000 8000 6000 4000 2000 0 0 5 Coss Crss 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100

VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)

ID=50A VGS=10V

C, Capacitance (pF)

-50

50

100

150

200

VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance

1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature

VGS=0V
2

VTH, Normalized Gate-Source Threshold Voltage

VDS=VGS ID=250A

IS, Source-drain current (A)

10

10

10 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current

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CEP83A3/CEB83A3
VGS, Gate to Source Voltage (V)
10 VDS=15V ID=16A 10
3

RDS(ON)Limit

ID, Drain Current (A)

4
100s 1ms 10ms DC

10

10

0 0 20 40 60 80 100

10

TC=25 C TJ=150 C Single Pulse 10

-1

10

10

10

Qg, Total Gate Charge (nC) Figure 7. Gate Charge

VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area

VDD t on V IN D VGS RGEN G

90%

toff tr
90%

RL VOUT

td(on) VOUT

td(off)
90% 10%

tf

10%

INVERTED

VIN

50% 10%

50%

PULSE WIDTH

Figure 9. Switching Test Circuit

Figure 10. Switching Waveforms

r(t),Normalized Effective Transient Thermal Impedance

10

D=0.5

0.2

10

-1

0.1 0.05 0.02 0.01 Single Pulse

PDM t1 t2 1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve

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