IMPATT and TRAPATT

IMPATT diode

IMPATT Stands for IMPact ionization Avalanche Transit-Time

IMPATT DIODE Operation

The diode is operated in reverse bias near
breakdown, and both the N and N- regions are
completely depleted
Because of the difference in doping between
the "drift region" and "avalanche region", the
electric field is highly peaked in the
avalanche region and nearly flat in drift
region.
In operation, avalanche breakdown occurs at
the point of highest electric field, and this
generates a large number of hole-electron pairs
by impact ionization.
The holes are swept into the cathode, but the
electrons travel across the drift region toward
anode.
Figure 1: Impatt Diode
Operation

V and I characteristics

Resonant frequency of IMPATT diode is given as

f = Vd/2L
Vdcarrier drift velocity, L Length of the drift space

Construction

ADVANTAGES OF IMPATT DIODE:

1.Operate at frequencies between about 3 and 100 GHz or more.
2. High power capability.

DISADVANTAGES OF IMPATT DIODE :

1. Major drawback of using IMPATT diodes is the high level of phase
noise they generate.
2. The noise figure for IMPATT is 30dB .
3. Tuning range is not as good as Gunn diodes.

APPLICATION OF IMPATT DIODE:

1. MICROWAVE GENERATOR
2. MODULATED OUTPUT OSCILLATOR
3. RECEIVER LOCAL OSCILLATOR
4. PARAMETRIC AMPLIFIER (par amps)
5. INTRUSION ALARM NETWORK
6. FM TELECOMMMUNICATION TRANSMITTERS
7. CW DOPPLER RADAR TRANSMITTER.

TRAPATT DIODE
TRApped-Plasma Avalanche Trigged Transit Diode .

Construction of TRAPATT Diode:

It is derived from IMPATT Diode.

Silicon or Gallium Arsenide is used for fabricating
TRAPATT Diode.

TRAPATT Diode can be constructed either by p+ -nn+ or n+-p-p+.

TRAPATT DIODE WAVEFORM:

AB Charging of junction capacitance

BC Electron and hole plasma formation by depressed
field
DE Plasma extraction
EF Residual extraction
FG Charging of diode
GA Constant voltage after full charging

SALIENT FEATURES OF TRPATT DIODE

1.It is a high efficiency diode oscillator .
2. Its oscillations depend on delay in current caused by
avalanche process.
3.The diode diameter is about 50 mm for CW operations and is
about 750 mm at lower frequency for high peak power
application.
4. It can be operated over a range of 400MHz to 12GHz.
5. Its has an efficiency of 20% - 40%.

ADVANTAGES OF TRAPATT DIODE:

1. Its efficiency is relatively high.
2. It can be used over a frequency range of a few hundred MHz
to several GHz.

DISAVANTAGE OF TRAPATT DIODE:

1. It has high noise figure.
2. Its use at upper microwave frequencies is limited .
3. It generate strong harmonics due to the short duration of
current pulse.

Transferred Electron Devices (TED)

TEDs are semiconductor devices with no junctions and
gates.
They are fabricated from compound semiconductors like
GaAs, InP, CdTe etc.

Gunn Diode
Such type of semiconductor device which have only N type
doped (semiconductor) material, is called Gunn Diode.
Symbols and Circuit Diagram:

Most Common Materials :Gallium

Indium Phosphide (InP).

Arsenide (GaAs) and

Gunn Effect:
Above some critical voltage (Corresponding to Electric
field of 2k-4k V/cm) the current passing through n-type
GaAs becomes a periodic fluctuating function of time.
Frequency of oscillation is determined mainly by the
specimen, not by the external circuit.
Period of oscillation is inversely proportional to the
specimen length and is equal to the transit time of
electrons between the electrodes

 The current waveform was produced by applying a

voltage pulse of 16V and 10ns duration to an n-type
GaAs of 2.5 x 10-3 cm length. The oscillation frequency
was 4.5Ghz.

Applications
Anti-lock brakes
Sensors for monitoring the flow of traffic
Pedestrian safety systems
Distance traveled" recorders
Traffic signal controllers
Automatic traffic gates