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CONTENTS
INTRODUCTION TO VLSI
Very-large-scale
integration (VLSI) is the
process of creating integrated
circuits by combining thousands
of transistors into a single chip.
VLSI began in the 1970s when
complex semiconductor
and communication technologies
were being developed.
MOSFET TECHNOLOGY
The growth of digital
technologies like the
microprocessor has
provided the motivation
to advance MOSFET
technology faster than
any other type of siliconbased transistor.
A big advantage of
MOSFETs for digital
switching is that the
oxide layer between the
gate and the channel
prevents DC current
from flowing through the
gate, further reducing
power consumption and
MOORES
LAW
GORDON MOORE
LIMITATIONS ON MOSFET
TECHNOLOGY
Ctegte Insulator
Drain
Source
Vg
Ec
Ev
Drain
(A/
m)
SHORT CHANNEL-PROBLEMS
10-3
GGaa
Ctegte Insulator
D
S
10-5
Smaller
Size
shrink
size
Drain
Current, I
10-7
10
-9
Cd
or
larger Vd
10-11
Drain
Source
Gate 0.3
Voltage,
V
0.6
0.0
(V)
0.9
Drain
Leakage Path
Gate cannot control the leakage current
paths that are far from the gate.
In planar devices on-current is
mostly carried out in a top layer.
Body current is a source of leakage
when the device is off.
Source
Source
Gate
Drain
FinFET body is a
thin fin
Drain
Gate
Fin Height
Fin Width
INTRODUCTION TO FINFET
The term FINFET describes a non-planar,
double gate transistor built on an SOI
substrate, based on the single gate transistor
design.
The important characteristics of FINFET is
that the conducting channel is a thin Si fin,
which forms the body of the device.
The thickness of the fin determines the
effective channel length of the device.
HISTORY OF FINFET
FINFET is a transistor design first
developed by Chenming Hu and his
colleagues at the University of California at
Berkeley, which tries to overcome the worst
types of SCE(Short Channel Effect).
Originally, FINFET was developed for use on
Silicon-On-Insulator(SOI).
SOI FINFET with thick oxide on top of fin are
called Double-Gate and those with thin
oxide on top as well as on sides are called
Triple-Gate FINFETs
FINFET
FINS
Drain
Gate Length
Source
Fin Height
Fin Width
FINS
The fin is used to form the raised
channel.
As the channel is very thin the gate
has a great control over carriers within
it, but, when the device is switched on,
the shape limits the current through it
to a low level.
The thickness of the fin (measured in
the direction from source to drain)
ADVANTAGES OF FINFET
Higher technological maturity than planar DG
Suppressed Short Channel Effect(SCE)
Better in driving current
More compact
Low cost
DISADVANTAGES OF FINFET
Reduced mobility for electrons
Higher source and drain resistances
Poor reliability
APPLICATIONS
Low power
design in
digital circuit,
such as RAM,
because of its
low off-state
current.
Power
amplifier or
other
application in
analog area
which requires
good linearity.
CONCLUSION
Double-gate FET can reduce Short Channel
Effects and FinFET is the leading DGFET.
Optimization design includes geometry, S-D finextension
doping, dielectric thickness scaling, threshold
voltage control.
Fabrication of FinFET is compatible with CMOS
process
10 nm gate length, 12 nm fin width device has
REFERENCES
[1]TsuJae King Liu,FinFETHistory,Fundamentals and
Future, 2012 Symposium on
VLSI Technology .
[2] Jovanovi, T. Suligoj, P. Biljanovi, L.K. Nanver, FinFET
technology for wide-channel devices with ultra-thin silicon
body.
[3] M.Jurczak, N.Collaert, A.Veloso, T.Hoffmann, S.Biesemans,
Review of FinFET Technology, IEEE
[4]http://www. techalone.com, Electronic seminar topic .
[5] Vishwas Jaju, Silicon-on-Insulator Technology, EE 530,
Advances in MOSFETs, spring 20010 pp. 1-12.
Queries?