Faculty Talk Compound Semiconductor 09mar2011

Compound Semiconductor
Growth and Applications
Dr Tahir Zaidi
Department of Electrical Engineering
College of Electrical and Mechanical Engineering
National University of Science and Technology, Rawalpindi,
Pakistan
tahirzaidi@yahoo.com
Compound Semiconductor Growth and Applications
1
Outline
Applications
Lighting
Spintronics
Dilute Magnetic Semiconductor
Gd Doped GaN (Ga1-xGdxN)
Introduction
Ga1-xGdxN MOCVD Growth
Spin-Polarized Light Emitting Diode
Introduction
Ga1-xGdxN LED MOCVD
Characterizations
Conclusion
2
Lighting Applications
3
How Does General Illumination Differ from Lighting?
What is lighting?
Use of a light source Traffic Signals Displays
Indirect or Direct
Traffic Signals and Displays
Street Lights and Interior Lighting
What is General Illumination?
A Subset of Lighting
Illuminating a surface or area
Typically white light
Residential/Commercial lighting systems
Traditionally Incandescent and Fluorescent Sources
General Illumination Sources
4
Current Solid State Lighting
Solid State Lighting (SSL) is lighting using Light Emitting Diodes.
NO SIGNIFICANT PENETRATION INTO GENERAL ILLUMINATION
5
Why is it important?
Advantages of SSL
Controllability
Efficiency
Small Size
Long lifetime
For SSL to take hold in General Illumination
Cost must be reduced
Efficiency increased
Must improve upon conventional lighting
New ways of thinking about Lighting
Creative designs
Think Outside the Bulb
6
What is White Light?
Looks white to the human eye

May
Be tinted
have varied
Spectra
Color Rendering
Color Temperatures
cause psychological or physiological changes
7
White LEDs Two Approaches
LED + Phosphor(s)
RGB LEDs + Color Mixing
High Power White LED Technology High Power White LED Technology for Solid State for Solid State Lighting, Paul S. Paul S. Martin,
http://www.lumiled.com/pdfs/techpaperspres/SPIE2001.pdf
8
RGB-LED
Advantages
Spectrally Dynamic
Wide Color Gamut
Disadvantages
Peaked Spectra
Complex packaging and color
mixing optics
RGB-LED White Light
1.0
Peaked LED Emission
CCT: 5400 K
0.8 CRI:<50
Intensity (a.u.)
0.6
0.4
0.2
0.0
400 500 600 700 800
Wavelength (nm)
9
Phosphor Converted (PC) White LED
Advantages
Easy to fabricate
Broad Spectrum
Disadvantages 1.5
T=4500 K
Intensity (arb. units)

Efficiency loss in stokes Ra=90
K=330 lm/W
shift
1.0
Spectrally Static Source 0.5
0.0
400 500 600 700
Wavelength (nm)
10
Spintronics
11
Spintronics
Extension of electronics: use of

spin in addition to charge
Integration of magnetic, optical and S
semiconducting properties
Promise of new functionalities and
devices
Faster data manipulation
Reduced power consumption
Non volatile memories
Ultra-Fast logic functions Electronics
Quantum computation
Spin-based photonics Spintronics
SPIN TRansport electrONICS Magnetics Optics
12
Spintronics Applications
Giant Magneto Resistance (GMR)

Tunneling Magneto Resistance (TMR)
Applications
Magnetic Storage
Non-voaltile Memories Nonvolatile
Magnetic Storage
Read/write head memory
Successful use of ferromagnetic conductors

p- type contact
Spin injection, transport, H

FM Aligner layer
lifetime p-type GaN spacer h+

n-type contact
Active region +
Applications n-type GaN buffer layer
Spin transistors Sapphire substrate
Spin emitters Spin Transistors Spin emitters
Conceptual use of magnetic semiconductors

13
Spintronics Applications GMR
Giant Magnetoresistance (GMR)
Soft Ferromagnetic Layer
Hard Ferromagnetic Conductor Layer

Layer
Chappert, AF et al, J. Phys. D: Appl. Phys. 41, 093001 (2008) Magnetic Storage
14
Spintronics Applications TMR
Tunnel Magnetoresistance (TMR)
Hard Ferromagnetic Layer Soft Ferromagnetic Layer
Insulation Layer
Nonvolatile Memory
0.1 m
tunneling ~ 100 nm
ferromagnetic barrier
electrodes (insulator) AP
P
Low resistance state High resistance state
J.S. Moodera ei. al. Phys. Rev. Lett. 74, p. 3273 (1995)
Miyazaki T and Tezuka N, J. Magn. Magn. Mater 139 L231 (1995)
Sarah M Thompson, J. Phys. D: Appl. Phys. 41, 093001 (2008)
15
Spintronics Applications Spin Transistor
FM Metal Schottky Gate FM Metal
Spin Spin
Modulation Doped AlGaAs
Injector Analyzer
B InGaAs
2DEG
0.1-1% change in voltage or resistance V

reported (between P and AP) P
P F1 F2 AP
Semiconductor
channel
Datta and Das, APL 56, 665 (1990)
BT Jonker and ME Flatt, Nanomagnetism, Elsevier 2006
16
Spintronics Applications Spin LED
Polarization of emitted electro-luminescence

depends on spin polarization of injected holes
Polarization is proportional to magnetic
Ohno et al., Nature 402, 790 (1999)
moment
17
Spin Injection - Transport - Decay in Semiconductors
Ferromagnetic Non-magnetic
Metal semiconductor
Spin scattering a resistivity mismatch Spin polarization decay in non-magnetic semiconductor
Transport in FM metals is naturally spin-

polarized however:
Interfacial resistivity differences cause
loss of spin information between metal
and semiconductor
Low spin injection efficiencies
Prinz, Science 282, 1660 (1998)
Need material that is both semiconducting and magnetic
18
Requirements of Spintronics Semiconductor Material
Curie temperature (TC) above room temperature (RT)

Easily integrable with electronic materials
Able to incorporate both n- and p-type dopants
Growable by industry standard growth techniques
19
Research Objective
Suitable material for spintronics and optoelectronics applications
MOCVD growth of device quality thin films

Material characterization: Structural, optical, electrical, magnetic
Design, growth and fabrication of a spintronics/optoelectronic device
Functional characterization to establish successful operation
20
Dilute Magnetic Semiconductors
(DMS)
21
Dilute Magnetic Semiconductors (DMS)
+ =
Semiconductor Magnetic elements DMS
Injection of Spin-polarized Magnetic Realization of

electrons into semiconductor semiconductor Spintronics devices
Alloy of non-magnetic semiconductor and magnetic elements

Ohno Science Vol 281 14 Aug 1998
22
Magnetic Ordering in DMS
Random distribution of magnetic dopants 1
Clustered magnetic dopants 2
Phase-separated magnetic dopants 3
1
Dietl et al., Science 287, 1019 (2000)
2
Rao et al., Physical Review Letters 89, 185504 (2002)
3
Thaler et al., Electrochemical and Solid-State Letters 7, G34 (2004)
23
Indirect Exchange Mechanisms in DMS
Carrier-Mediated Exchange: RKKY-type FM or

AFM coupling of dilute centers by free carriers 1
Double Exchange: FM coupling of nearby TM atoms d d

due to hopping of electrons to unoccupied d-shells 2
TM TM
Superexchange: AFM coupling of nearest neighbor p

cations through shared anion 3 d
anion
d
TM TM
Bound Magnetic Polarons: Alignment of spins of

TM by donor (acceptor) impurities within a polaron radius 4
1
2
Sato et al., Japanese Journal of Applied Physics 40, L334 (2001)
3
Lewicki et al., Physical Review B 37, 1860 (1988)
4
J. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nat. Mat. 4, 173 (2005)
24
Magnetic Semiconductors History
Early 60s: Eu compounds (EuO,EuS, EuSe) and CdCr2S4

Very hard to grow, Tc < 150Ka
Mid-80s: Diluted Magnetic Semiconductors
Mn doped II-VI (e.g., CdTe and ZnS)
Difficult to dope Tc < 5K 3,4
Direct Mn-Mn AFM exchange interaction
PM, AFM, or SG (spin glass) behavior
Late 80s: (In,Mn)As films on GaAs substrates (MBE): FM on p-type.
Late 90s: (Ga,Mn)As films on GaAs substrates (MBE): FM; heterostructures 5
Early 2000 Present : TM doped GaN and ZnO 6
2005 Present : Gd Doped GaN 7
a. 1
J. S. Moodera et al., Physical Review Letters 61 (1988) 637.
b. 2
U. Luders et al., Applied Physics Letters 88 (2006) 082505.
c. 3
R. Fiederling et al., Nature 402 (1999) 787.
d. 4
B. T. Jonker et al., Physical Review B 62 (2000) 8180.
e. 5
H. Ohno, Journal of Magnetism and Magnetic Materials 200 (1999) 110
f. 6
Dietl et al., Science 287 (2000) 1019
g. 7
S. Dhar et al Phys Rev Lett 94 (2005) 037205
25
Dopants for DMS
Dietl predicted TC > RT for 5 %

Mn doped GaN and ZnO
with 3.5x1020 holes/cm3
Dhar reported colossal magnetic

moment of 4000 B/Gd atom in
GaN doped with 1016 cm-3 Gd

S. Dhar et al Phys Rev Lett 94 (2005) 037205.
26
Dopant for DMS
Transition metal (TM) or rare earth (RE) doping
Partly filled 3d shells for TM or 4f shells for RE
Coupling Issues
Distances too large for direct coupling.
Carrier mediated spin coupling preferred
27
Ga1-xTMxN No Success in Spintronics
Ga1-xTMxN films highly resistive
TMs deep acceptors in GaN
Phase separation, clustering, spinodal decomposition during growth
Carrier mediated mechanism does not exist / unproven
28
Gd Doped GaN (Ga1-xGdxN)
29
Rare Earth (RE) Impurities
RE impurities in semiconductors have important applications, such as:

- Er doped Si is used as optical amplifier in optical communication
- Gd doped III-V candidate for magnetic spintronics applications
RE impurities often form deep centers since their electron configurations
differ so much from the atoms in usual semiconductors
RE impurities also induce formation of intrinsic defects
The La series of periodic table contains 14 RE elements differing mainly
in the electronic configurations of their 4f and 5d shells (all have 6s 2):
La Ce Pr Nd Pm Sm Eu Gd Tb Dy H Er Tm Yb
o
4f 0 2 3 4 5 6 7 7 9 10 11 12 13 14
5d 1 2 0 0 0 0 0 1 0 0 0 0 0 0
30
State of Art in GaGdN (MBE)
Paper Growth Technique Summary
Teraguchi, RF plasma MBE on (0001) Si FM with Tc >400C

Asahi et al face of 6HSiC. 6% Gd No phase separation, Gd on Ga sites
(2002, 2004)
Dhar et al RMBE on 6H-SiC(0001) Colossal magnetic moment 4000B per Gd atom.
(2005) Gd doping from 7x1015 to Highly resistive. Structural properties similar to
2x1019 cm-3 undoped GaN
Hite et al GaGdN and GaGdN:Si on RT ferromagnetism. Si co-doping improves FM and
(2007, 2008) sapphire by gas source MBE conductivity (n-type). = 0.25-cm at 5x1017cm-3,
using solid Gd, Ga, and Si and 0.05-cm at 1.5x1018cm-3. Proton irradiation
sources reduce PL and FM. Annealing at 500C restores
Kammermeier NH3 assisted MBE on 6H No phase separation seen by XRD and TEM. XLD
et al (2008) SiC. 11019 to 21019 of show 85% Gd atoms on Ga sites
Gd/cm-3
Zhou et al RF plasma-assisted MBE on RT FM, Si doping increased carrier density, FM.
(2008) sapphire. Below 300C, FWHM of 20arc min.
12.5% Gd obtained. Si doped
during growth
31
State of Art in GaGdN (Ion Implantation)
Dhar et al Gd3+ ions implanted in MBE Colossal magnetic moment exceeding 1x104B per
(2006) grown GaN with 300 keV at Gd atom. No secondary phase related to Gd detected
2.410161.01020cm3 by XRD
Khaderbad et Gd3+ ions implanted in MBE Colossal magnetic moment exceeding 1x104B per
al (2007) grown GaN with 300 keV at Gd atom. Annealing reduce sat. mag. in low Gd
2.410161.01020cm3. 30s sample, no change in high Gd samples. XRD show
RTA under N2 at 900 C Ga and N interstitials, reduce upon annealing.
Han et al Gd+ ions implanted at 3 Post annealing XRD shows formation of second
(2006) 61014cm-2 into single-crystal phases including Gd3Ga2, GdN, and Gd. High sat.
GaN on sapphire and annealed mag. seen after annealing at 900C (~15emu cm3)
at 7001000 C.
Hejtmnek et Ga1xGdxN (x~0.010.07) by Weak FM up to 700 K. For x=0.01 M~2B/Gd atom.
al (2008) Gd ion implantation of GaN No signs of loss of crystallinity, no secondary
thin films on sapphire. phases related to Gd detected.
Kammermeier Undoped GaN prepared by XRD for high implantation doses indicate onset of
et al (2008) same method implanted with structural damage, partly removable by annealing
11019 to 21019 of Gd/cm-3
32
Proposed FM Mechanisms in Ga1-xGdxN
Dhar et al (2005) Long-range spin polarization of GaN matrix

Khaderbad et al (2007) Gd induced magnetic moment in Gai and/or Ni
Hite et al (2008) Unpaired bonds from defects not responsible for FM
Zhou et al (2008) Defects (VN) stabilized FM, carrier-induced FM
Kammermeier et al (2008) Gd itself not responsible for high temperature FM
A. Ney et al., (2007, 2008)
Dalpian and Wei FM results from shallow donor impurities (O2, Si) e-
(2005) occupying Gd-induced 4f empty levels
Liu et al. (2008) Gd - VGa interaction FM (3B/VGa). p-type doping
weakly promotes FM
Gohda, Oshiyama (2008) Increased VGa / Gd increases FM.
Chandrima, Walter (2009) Ni , Oi promote magnetism, form a complex with Gd
Intriguing material, no consensus on FM origin / mechanism
33
Ferromagnetism in GaN:Gd
Gd is isovalent with Ga => no free

carriers introduced
Gd ions are larger than both Ga and
N => Gd will create vacancies
Electronic configuration of Gd:
4f75d16s2
4f7 electrons spin aligned (Hunds
Rule)
34
Ga Vacancy in GaN : = 3.0 B
Energy Relative to VB Maximum [eV]
3-fold defect levels near valence-band top split due to exchange

interaction, causing spin polarization with = 3 B
A. Oshiyama: JST-DFG Workshop 13/17 Kyoto, Feb 21-23, 2009
35
Gd in GaN: = 7.0 B
Gd 4f states are half-filled and spin polarized = 7.0 B
36
Gd 2VGa Interaction in GaN : = 13.0 B
Ferromagnetic interaction among 2 VGa and Gd, results in = 13.0 B

37
Magnetic Moment Increase with VGa
Linear increase in with the number of VGa

Colossal magnetic moment not possible due to Gd VGa
38
GaGdN : Energetics among Several Spin Configurations
Ferromagnetic configuration most stable: E AFM-FM =1.12 eV
39
MOCVD Semiconductor Growth
40
MOCVD Growth Tool
Growth Valve
MFC
Vent
S S S S C Inner
P P P P P
A A A A 2 Middle
R R R R M Outer
E E E E N
Growth
Reactor
Vent
S C S T T C T T
I P P M M P E M
H 2 A I A 2 G G Exhaust
4 M R N L M
N E G
Modified vertical shower head commercial MOCVD growth tool

Dual injector blocks to eliminate mixing of precursors
41
MOCVD Introduction
Precursor Delivery
42
MOCVD Introduction
Gas Flows in
Growth Chamber
Metal organic chemical vapor deposition

Vertical Shower head reactor
Up to 3 wafers at a time
Boundary layer above wafer carrier
43
MOCVD Introduction
Diffusion
Pyrolysis
Adsorption
Desorption
Surface reactions
Reactions Inside a
Boundary Layer
44
Modified Gd Precursor Delivery
Valve
Growth
MFC
Vent
S S S S C Inner
P P P P P
Middle
A A A A 2 Heated Gd Line
R R R R M Outer
E E E E N
Growth
Reactor
Vent Gd Source
S C S T T C T T
I P P M M P E M Heater Jacket
H 2 A I A 2 G G
4 M R N L M Exhaust
N E G
Gd source heater jacket with embedded heater, and temperature control

Separate delivery line with heater, insulation and temperature control
45
Ga1-xGdxN MOCVD Growth Parameters
Precursors
Ga : TMGa
N : NH3 0.5m Ga1-xGdxN
Gd : Gd(thd)3, (Cp)3Gd 2m GaN
Si : SiH4
Sapphire
Mg : (Cp)3Mg
Flow Rates
TMGa flow : 133 moles/min
Gd(thd)3 flow : 10sccm ( moles/min) to 80sccm ( moles/min)
(Cp)3Gd flow : 10sccm ( moles/min) to 160sccm ( moles/min)
Substrate
2m Template of GaN on Sapphire, Sapphire and Silicon
46
Three kinds of growth mechanisms
FM VW SK
Frank-Van Der Merwe (FM) : substrate > film + interface

layer by layer growth (2D growth)
Volmer-Weber (VW) : substrate < film + interface

3D growth
Stranski-Krastanov (SK) : substrate > film + interface

substrate < film + interface
2D growth 3D growth
where substrate, film, or interface ; surface energy at substrate, film or
interface
47
MOCVD growth of III-N Structures
1. Lattice-mismatched system 2. Mostly governed by

pseudomorphic growth
3. Larger strain energy 4. Formation of islands to

release this strain energy
48
Standard GaN LED Schematic
p-Contact
n-Contact
p-GaN
GaN/InGaN
n-GaN
Substrate
49
LED Layer Details (Recipe for MOCVD)
50
Conventional GaN-based optoelectronics
Emitting Device Detecting Device

hole
hole
EC electron qb electron
EC
EC
Emitted
photons Emitted
Incident
photons
EFs
photons
EV
EV
EV
LED LD PD
Control the density of various dislocations during growth

Increase quantum confinement in the active region
51
Why Nanostructures ?
M. Asada etc IEEE J. Quantum Electronics QE-22, 1915 (1986)
Maximum Gain (cm-1)

Carrier Density (cm-1)
Strong confinement and High quantum efficiency

Embedded in semiconductor matrix.
Used in wide variety of semiconductor devices
Self-assembled QDs important for both physics (theory) and devices
(applications)
52
Introduction to quantum dots
D(E) D(E) D(E) E

QD QD
Bulk QW
Ec
n=2
n=1
E E Ec E
Ec Ec x
Physical properties
A particle in a nano-scale cage
Electronic states spatially localized
Energy fully quantized
Higher electron density of state near band gap
Higher probability of optical transition
53
Novel Device Design
Two essential pieces

Dynamic Dual Wavelength LED
Phosphor Combination
Complex Design Simple Design

Full Control Limited Control
54
- Defined
is defined as the ratio of the long wavelength

intensity, Il, to the short wavelength intensity, Is.
Is
Intensity (a.u.)
Il

Il
66
Is
300 400 500 600 700 800
Wavelength(nm)
55
Spin-Polarized Light Emitting Diode
56
Standard GaN and Ga1-xGdxN LED Schematic
pC
- ontact
nn-C
- ontact
pp-G
- aGdN
GaN/InGaN
nn-G
- aGdN
Substrate
57
LED Layer Details
58
Characterization results
59
Polarized Light Detection Setup
Detector
Polarizer
Quarter Wave Plate
Lens
Magnet
60
Standard GaN LED Polarization
-4 K Guass +4 K Guass
61
Standard GaN LED Polarization
Left Cir Polar Right Cir Polar
62
Ga1-xGdxN LED Polarization
63
Left Cir Polar ( -) Right Cir Polar (+)
64
65
66
Ga1-xGdxN XRD
67
Co-Doped Ga1-xGdxN XRD
68
Ga1-xGdxN PL
69
Ga1-xGdxN VSM
70
Ga1-xGdxN SQUID
Region of VSM measurement
71
Co-Doped Ga1-xGdxN VSM
72
Ga1-xGdxN Alpha Stopping Power
73
Ga1-xGdxN Neutron Cross Section
74
Conclusion
75
Conclusions
XRD of Ga1-xGdxN films similar to GaN

Improved resistivity of Ga1-xGdxN compared to GaN
RT FM in Ga1-xGdxN using Gd(thd)3 doping source
Increased Gd flow does not enhance magnetism
Oxygen plays important role in FM behavior
Co-doping with Si caused no change in FM, decreased resistivity, improved PL
Co-doping with Mg reduced FM, increased resistivity, reduced PL
Ga1-xGdxN films increased neutron cross section and alpha stopping power
Ga1-xGdxN p-n diode and LED show increased series resistance
Difference in left and right circular polarized light emission in Ga 1-xGdxN LED
Polarization ratio changes with application of external magnetic field
76
Future Work
Optimization of Ga1-xGdxN LED for magnetic polarization manipulation
Ga1-xGdxN polarization sensor development and optimization
Communication feasibility study using polarization modulation
Optimization of Ga1-xGdxN based structures for neutron detector
77
Achievements
Successful growth of RT FM Ga1-xGdxN by MOCVD

Design and fabrication of MOCVD gas panel, Modification of precursor
delivery system
Design, growth and fabrication of Ga1-xGdxN RT spin polarized LED
Manipulation of spin polarization at room temperature with an external
magnetic field
13 papers and 16 conference presentations
78
Publications
[1] T. Zaidi, W. E. Fenwick, A. Melton, N. Li, S. Gupta, H. B. Yu, A.

Ougazzaden, and I.T. Ferguson, Effects of N doping on ZnO thin films
grown by MOVPE, Journal of Crystal Growth, vol. 310, pp. 5011-5015,
2008.
[2] T. Zaidi, A. Melton, M. Jamil, W.E. Fenwick, I. T. Ferguson, n-type, p-
type and Semi-insulating ZnO:N thin films Growth by MOCVD with NH3
Doping, Journal of Vacuum Science and Technology June, 2009
[3] T. Zaidi, M. Jamil, A. Melton, N. Li, W. E. Fenwick, I. T. Ferguson, NH3
Doping in MOCVD Growth of ZnO Thin Films, MRS Fall 2008
[4] S. Gupta, T. Zaidi, M. H. Kane, and I. T. Ferguson, Topical Review:
Transition metal and rare earth doping of GaN, Physica Status Solidi (B),
2008, in press, Invited paper.
[5] W. E. Fenwick, T. Zaidi, S. Gupta, H. Yu, A. Melton, A. Ougazzaden, and
I. T. Ferguson ,Effects of group V doping and III-N Co-Doping on ZnO
thin films grown by MOVPE , Proc. IC MOVPE, 2008, pp. 205.
[6] W. E. Fenwick, S. Gupta, H. Yu, A. Melton, T. Zaidi, A. Ougazzaden, and
I. Ferguson, MOCVD growth of transition-metal doped GaN and ZnO for
spintronic applications, IC MOVPE, June 01-06, 2008.
79
Publications Continued
[7] S. Gupta, A. Melton, E. Malguth, W. E. Fenwick, T. Zaidi, H. Yu, and I. T.

Ferguson, Rare earth doping of GaN with gadolinium by MOCVD,
2008, in press.
[8] S. Gupta, W. E. Fenwick, A. Melton, T. Zaidi, H. Yu, V. Rengarajan, J.
Nause, A. Ougazzaden, and I. T. Ferguson, MOVPE growth of transition-
metal doped GaN and ZnO for spintronic applications, Journal of Crystal
Growth, vol. 310, pp. 5032-5038, 2008, Invited paper.
[9] S. Gupta, W. E. Fenwick, A. Melton, T. Zaidi, H.Yu, V. Rengarajan, J.
Nause, A. Ougazzaden, I. T. Ferguson, MOVPE growth of transition-
metal-doped GaN and ZnO for spintronic applications, Journal of Crystal
Growth, v 310, n 23, p 5032-8, 15 Nov. 2008
[10]W. E. Fenwick, M.H. Kane, R. Varatharajan, T. Zaidi, Z.Fang, B. Nemeth,
D. J. Keeble, H. El-Mkami, G.M. Smith, J. Nause, C.J. Summers, I.T.
Ferguson, Transition metal- and rare earth-doped ZnO: a comparison of
optical, magnetic, and structural behavior of bulk and thin films,
Proceedings of the SPIE - The International Society for Optical
Engineering, v 6474, p 64741Q-1-8, 2007
80
Publications Continued
[11]W.E. Fenwick, M.H. Kane, Z.Fang; T. Zaidi, N. Li; V. Rengarajan, J.

Nause, I.T. Ferguson, Transition metal-doped ZnO: a comparison of
optical, magnetic, and structural behavior of bulk and thin films, Zinc
Oxide and Related Materials Symposium, p 55-60, 2007
[12]A. Melton, S. Gupta, E. Malguth, W.E. Fenwick, T. Zaidi, H. Yu, I. T.
Ferguson, Rare Earth Doping of GaN with Gadolinium by MOCVD,
MRS Proceedings Fall 2008
[13]M. Jamil , T. Xu, T. Zaidi, A. Melton, B. Jampana, C.L. Tan, B.S. Ooi, I.
T. Ferguson, physica status solidi (a), online on 15 Apr 2010, Accepted
for print
81
Conference Presentations
[1] T. Zaidi, M. H. Kane, S. Gupta, N. Li, W. E. Fenwick, M. Han, Z. J.

Zhang, C. Summers and I. T. Ferguson, Magnetic and Optical properties
of Ga(Cr, Mn, Fe)N grown by Metal Organic Chemical Vapor Deposition,
52nd Magnetism and Magnetic Materials Conference, Tampa, FL,
November 5-9, 2007
[2] S. Gupta; H. Kang; M. Kane; E.H. Park; T. Zaidi; I.T. Ferguson, Growth
and Magnetization Study of Transition Metal Doped GaN Nanostructures;
7th Int'l Conference of Nitride Semiconductors (ICNS-7) Las Vegas, NV,
Sept. 16-21, 2007
[3] S. Wang; N. Li; E.H. Park; Z. Feng; A. Valencia; J. Nause; M. Kane; T.
Zaidi; I.T. Ferguson; Metalorganic Chemical Vapor Deposition of InGaN
Layers on ZnO Substrates; 7th Int'l Conference of Nitride Semiconductors
(ICNS-7) Las Vegas, NV, Sept. 16-21, 2007
[4] M. Kane, S. Gupta, W. Fenwick; M. Han; Z. Zhang; T. Zaidi; I.T.
Ferguson; Comparison of Transition Metal Incorporation and Phase
Segregation in MOCVD-Grown Ga(Fe,Mn)N; 7th Int'l Conference of
Nitride Semiconductors (ICNS-7) Las Vegas, NV, Sept. 16-21, 2007
[5] M. Jamil, T. Zaidi, A. Melton, S. Gupta, W. Fenwick, E. Malguth, I. T.
Ferguson, MOCVD Growth of Ferromagnetic Ga Gd N and Effect of Co-
Doping, ICNS-8, Oct 2009
82
Conference Presentations Continued
[6] T. Zaidi, M. Jamil, A. Melton, and I. T. Ferguson, Liquid injection

MOCVD growth of BiFeO3 thin films on GaN, MRS Fall 2009
[7] M. Jamil, T. Xu, T. Zaidi, A. Melton, I. T. Ferguson, C.L. Tan and B.S.
Ooi, Controlled Epitaxy and Characteristics of InN Nanopyramids by
MOCVD, MRS, Fall 2009
[8] O. Hitzemann, M. Kaiser, E. Malguth, M. R. Wagner, J. H.. Schulze, A.
Hoffmann, S. Gupta, T. Zaidi, I.T. Ferguson, M. Rver, D.D. Mai, J.
Malindretos, and A. Rizzi, Optical measurements on Gd doped GaN,
EMRS, Regensburg 2010
[9] A. Melton, E. Burgett, M. Jamil, T. Zaidi, N. Hertel, I. T. Ferguson, GaN
As a Neutron Detection Material, IEEE Southeastcon, Mar 2010
[10] T. Zaidi, A. Melton, M. Jamil, B. Jampana, T. Xu, and I. T. Ferguson,
"Spin polarized light emitting diode with Ga1-xGdxN injection layer,"
Accepted, SPIE Tenth International Conference on Solid State Lighting,
Aug 2010
83
Compound Semiconductor
Growth and Applications
Dr Tahir Zaidi
Department of Electrical Engineering
College of Electrical and Mechanical Engineering
National University of Science and Technology, Rawalpindi,
Pakistan
84

Faculty Talk Compound Semiconductor 09mar2011

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Faculty Talk Compound Semiconductor 09mar2011

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Compound Semiconductor

Growth and Applications

General Illumination Sources

Solid State Lighting (SSL) is lighting using Light Emitting Diodes.

NO SIGNIFICANT PENETRATION INTO GENERAL ILLUMINATION

Think Outside the Bulb

Looks white to the human eye

RGB LEDs + Color Mixing

400 500 600 700 800

Intensity (arb. units)

Spectrally Static Source 0.5

Extension of electronics: use of

SPIN TRansport electrONICS Magnetics Optics

Giant Magneto Resistance (GMR)

Successful use of ferromagnetic conductors

Spin injection, transport, H

lifetime p-type GaN spacer h+

Spin transistors Sapphire substrate

Spin emitters Spin Transistors Spin emitters

Conceptual use of magnetic semiconductors

Giant Magnetoresistance (GMR)

Soft Ferromagnetic Layer

Hard Ferromagnetic Conductor Layer

Tunnel Magnetoresistance (TMR)

Hard Ferromagnetic Layer Soft Ferromagnetic Layer

FM Metal Schottky Gate FM Metal

0.1-1% change in voltage or resistance V

Polarization of emitted electro-luminescence

Spin scattering a resistivity mismatch Spin polarization decay in non-magnetic semiconductor

Transport in FM metals is naturally spin-

Need material that is both semiconducting and magnetic

Curie temperature (TC) above room temperature (RT)

Suitable material for spintronics and optoelectronics applications

MOCVD growth of device quality thin films

Semiconductor Magnetic elements DMS

Injection of Spin-polarized Magnetic Realization of

Alloy of non-magnetic semiconductor and magnetic elements

Random distribution of magnetic dopants 1

Clustered magnetic dopants 2

Phase-separated magnetic dopants 3

Carrier-Mediated Exchange: RKKY-type FM or

Double Exchange: FM coupling of nearby TM atoms d d

Superexchange: AFM coupling of nearest neighbor p

Bound Magnetic Polarons: Alignment of spins of

Early 60s: Eu compounds (EuO,EuS, EuSe) and CdCr2S4

Dietl predicted TC > RT for 5 %

Dhar reported colossal magnetic

Dietl et al., Science 287, 1019 (2000)

Transition metal (TM) or rare earth (RE) doping

Partly filled 3d shells for TM or 4f shells for RE

Ga1-xTMxN films highly resistive

TMs deep acceptors in GaN

Phase separation, clustering, spinodal decomposition during growth

Carrier mediated mechanism does not exist / unproven

RE impurities in semiconductors have important applications, such as:

Paper Growth Technique Summary

Teraguchi, RF plasma MBE on (0001) Si FM with Tc >400C

Dhar et al (2005) Long-range spin polarization of GaN matrix

Intriguing material, no consensus on FM origin / mechanism

Gd is isovalent with Ga => no free

Energy Relative to VB Maximum [eV]

3-fold defect levels near valence-band top split due to exchange

Gd 4f states are half-filled and spin polarized = 7.0 B