Sample M9940 contains GaN nanowires that were grown on a substrate using molecular beam epitaxy (MBE) technique. Atomic force microscopy (AFM) and near-field scanning optical microscopy (NSOM) data were collected on the nanowires to characterize their height, optical properties, and three-dimensional structure.
Sample M9940 contains GaN nanowires that were grown on a substrate using molecular beam epitaxy (MBE) technique. Atomic force microscopy (AFM) and near-field scanning optical microscopy (NSOM) data were collected on the nanowires to characterize their height, optical properties, and three-dimensional structure.
Sample M9940 contains GaN nanowires that were grown on a substrate using molecular beam epitaxy (MBE) technique. Atomic force microscopy (AFM) and near-field scanning optical microscopy (NSOM) data were collected on the nanowires to characterize their height, optical properties, and three-dimensional structure.
Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and GaO Gate Insulator Layer