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ECE-E434 Digital Electronics

Lectures 14: D-FF; Memory


Architecture; SRAM (Read Operation)

Instructor: Pouya Dianat


Nov 9 2017
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

SRFF using CMOS: Another Version


A Clocked Version of SR Flip-Flop
using Pass Transistor Logic

Very popular for making Static Random Access Memories (SRAM)


ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

D Flip-Flop
• The output takes the value of the data, D, when the clock goes H;
• otherwise it is in memory state.
• It is edge-triggered.
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

D Flip-Flop
Implementation
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

D Flip-Flop: Master-Slave Configuration


ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

Semiconductor Memories: Types


Why is memory needed?

Storing Data Storing


Instructions
Memory types Memory types

Main Memory Mass-storage Read/Right Read-Only


Memory

• Storing microprocessor
instructions
Random Access Mainly sequential • Look-up tables
Memory memories (disks, tapes) • Generally Random-
access
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

Semiconductor Memories: Terminology & Organization

• Memory cell
• Word line
• Digit/bit line
• Row decoder
• Sense amplifier
• Column decoder
• Read Operation
• Write Operation and driver
• Memory access time
• Memory cycle time
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

Random Access Memory


Memory types

Main Memory Mass-storage


Memory

Random Access Mainly sequential


Memory memories (disks, tapes)

Static Dynamic
• Uses static circuits as • Smaller area
memory cell • Requires refreshing
• Volatile • Volatile
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

Static RAM (SRAM)


ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

SRAM: Read Operation


ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

SRAM: Read Operation


• Bit lines are pre-charged to VDD
• Read operation has to be non-
destructive:

• Therefore:
ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

SRAM: Read Operation Design Criteria


ECE-E434
Digital Electronics
Memory Circuits– Ch. 16

SRAM: Speed of Read Operation

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